JP2000232188A - Granular semiconductor sealing material and semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To remedy the fluidity and weighing accuracy of a granular semiconductor sealing material composed of a thermosetting resin composition, by preventing the clogging of a hopper, etc., with the material due to deposition, cross-linking phenomena, etc., in a sealing process without degrading the various characteristics of the material as a sealing material by specifying the degree of compaction of the material. SOLUTION: A granular semiconductor sealing material is composed of a thermosetting resin composition and formed in powder or grains. In addition, the degree of compaction expressed by the formula is set at <=11%. In the formula, the initial bulk density is the measured value obtained when a sample arbitrarily extracted from the whole material is measured in conformity to JIS R1628. In addition, the tap packing rate is the measured result obtained when the sample is measured in conformity to JIS R1628. Therefore, the fluidity and weighing accuracy of the material are improved and the occurrence of such a failure as the void, etc., is suppressed, because the clogging of a hopper, etc., with the material due to adhesion, cross-linking phenomena, etc., is remedied.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a granular semiconductor encapsulating material used for semiconductor encapsulation and a semiconductor device using the same.

[0002]

2. Description of the Related Art As a sealing material used for semiconductor encapsulation, a molded article formed into a tablet is generally used. This tablet-shaped molded body is usually produced as follows. That is, first, after a composition containing an epoxy resin, a curing agent, an inorganic filler, and the like is melt-kneaded, a pulverized product is obtained through rolling, cooling, and pulverizing steps. Then, the obtained pulverized material is weighed as required on a weight basis or a volume basis, and is pressure-formed using a cylindrical mold. In this way, a tablet-shaped molded body is manufactured.

[0005] Semiconductor encapsulation methods using the above-mentioned tablet-shaped molded body are roughly classified into a transfer method and a multi-plunger method. The transfer method is
After heating and melting the semiconductor encapsulating material charged into one pot (encapsulating material input port), a cavity (mold) in which hundreds of semiconductor elements and the like are arranged through a groove called a runner. This is a method in which semiconductor sealing is performed by injecting into semiconductor devices. On the other hand, the multi-plunger system is a system in which one or several semiconductor elements or the like are arranged in the vicinity of one pot so that a plurality of semiconductor elements are present in the same mold. It is a system that minimizes the amount of sealing material used in the process, etc., and automates the process from loading the tablet into the pot to storing the molded product. The multi-plunger method has the disadvantage that the number of semiconductor devices manufactured with one tablet-shaped molded article is smaller than that of the transfer method, and the tablet processing cost per semiconductor device becomes higher. However, there are advantages such as yield of the sealing material and labor cost reduction by automation. Therefore, in recent years, the multi-plunger system has become mainstream in terms of total cost.

[0004]

Recently, in the multi-plunger system, in order to further reduce the cost, the use of a powder or granular (powder-granular) sealing material without using a tablet-like molded body has been studied. ing. However, when the pulverized material produced during the production of the tablet-like molded body is used as it is, a hopper (raw material storage container),
There is a problem that a measurement error occurs due to adhesion of the sealing material loading portion to the measuring device and the pot. As a result, unfilling or insufficient pressurization due to excess or deficiency of the sealing material occurs, which lowers the reliability and yield of the semiconductor device.

On the equipment side, if the pulverized material causes adhesion or cross-linking in the semiconductor manufacturing equipment, the supply into the pot is interrupted, and the semiconductor manufacturing equipment is stopped due to trouble, and automatic operation cannot be performed. This causes problems such as lowering the productivity. In addition, there is another problem such as contamination of the environment in which the semiconductor device is manufactured due to dust generated from the pulverized material.

The present invention has been made in view of the above circumstances, and improves clogging due to adhesion and cross-linking phenomenon in a sealing process without deteriorating various properties as a sealing material, thereby achieving stable flow. It is an object of the present invention to provide a powdery and granular semiconductor encapsulating material exhibiting performance and measurement accuracy and a semiconductor device using the same.

[0007]

In order to achieve the above-mentioned object, the present invention relates to a powdery and granular semiconductor encapsulating material made of a thermosetting resin composition, which comprises a compression molding compound represented by the following formula (1): Degree 1
The powdery and granular semiconductor sealing material set to 1% or less
The summary of the

[0008]

(Equation 3)

Further, the present invention provides a semiconductor device in which a semiconductor element is sealed by using the above-mentioned powdery semiconductor sealing material.
The summary of the

In other words, the present inventors have found that a powder exhibiting stable flowability and measuring accuracy can be provided without reducing various properties as a sealing material, improving clogging due to adhesion and crosslinking in the sealing step, and the like. A series of studies were conducted to obtain a granular semiconductor sealing material. In the process, the present inventors are deeply concerned with the fluidity of the granular material, and determine how much the granular material is tightened by its own weight, external force, movement, etc. from the stationary state, which is the closest to the fluidized state (away from the fluidized state) Or (2), that is, the compression degree represented by the above equation (1). And
As a result of intensive studies on a powdery and granular semiconductor sealing material used for semiconductor encapsulation, the present inventors have found that the intended object can be achieved if the above-mentioned compression degree is set in a specific range, and reached the present invention.

In the course of further research, the present inventors have paid attention to the adhesion of a low molecular component and a resin component on the surface of a granular material, which is one of the factors inhibiting flowability. In other words, it has been noted that it is difficult for the fine powder to reflow once it has adhered, because it does not have its own weight to drop off more than its adhesive force. Therefore, the present inventors actually applied the semiconductor sealing material in the form of a powder to a multi-plunger type semiconductor manufacturing apparatus, and then collected and deposited the powder adhered and deposited on the wall surface of a hopper and the like. As a result of investigating the particle size distribution of the powder, it was found that most of them were 80 mesh pass products. As a result of repeated studies on the relationship between the content ratio of the 80-mesh pass product and the fluidity, if the content ratio of the 80-mesh pass product in the entire powdery semiconductor encapsulating material is less than 15% by weight, the fluidity is reduced. It was found that it was good and hard to deposit on the wall surface of a hopper or the like. The present inventors set the content ratio of the 80-mesh pass product in a specific range, and set the packing density represented by the formula (2) in a specific range, whereby a more favorable result can be obtained. I figured out what I could get.

[0012] Further, if the whole powdery and granular semiconductor encapsulating material is a 4-mesh pass product and the content ratio of the 80-mesh pass product in the whole is less than 15% by weight, better results can be obtained. Also found out.

[0013]

Next, an embodiment of the present invention will be described in detail.

The powdery and granular semiconductor encapsulating material of the present invention is obtained by using a thermosetting resin composition, and is in the form of powder or particles (powder and particle). Then, the compression degree represented by the above equation (1) is set in a specific range.

As the thermosetting resin composition, for example, a composition in which a thermosetting resin, a curing agent and the like are blended at an appropriate ratio is used.

The thermosetting resin includes, for example, an epoxy resin, a maleimide resin, a polyester resin and the like. Among them, an epoxy resin is preferable. As the epoxy resin, those having two or more epoxy groups in one molecule are preferably used, and examples thereof include various epoxy resins such as cresol novolak type, bisphenol A type, and biphenyl type. These may be used alone or in combination of two or more. In addition, among the above epoxy resins, the epoxy equivalent is 100 to 300 g / ep,
Those having a softening point of 50 to 130 ° C are preferably used.

Examples of the curing agent include phenol resins, acid anhydrides, amine compounds and the like, and among them, phenol resins are preferred. Examples of the phenol resin include various phenol resins such as phenol novolak type, dicyclopentadiene type and phenol aralkyl resin. These may be used alone or in combination of two or more. Among the phenol resins, those having a hydroxyl equivalent of 70 to 150 g / ep and a softening point of 50 to 110 ° C. are preferably used.

When the phenol resin and the epoxy resin are used in combination, the mixing ratio is such that the hydroxyl group of the phenol resin is 0.5 to 2.0 equivalent per equivalent of epoxy group in the epoxy resin. It is preferable to set as follows. More preferably, it is in the range of 0.8 to 1.2 equivalents.

The thermosetting resin composition preferably contains an inorganic filler in addition to the thermosetting resin and the curing agent. As the inorganic filler, a silica powder such as a crystalline silica powder and a fused silica powder, and an alumina powder are usually used, and they are used alone or in combination.
And the above-mentioned inorganic filler usually contains 7 in the whole composition.
It is blended at a ratio of about 0 to 90% by weight.

In addition to the above-mentioned inorganic fillers, if necessary, amine-, imidazole-, phosphorus-, boron-, phosphorus-boron-based curing accelerators, mold release agents such as carnauba wax, brominated epoxy Various additives such as a resin, a flame retardant such as antimony trioxide, a flame retardant auxiliary, a colorant, and a silane coupling agent can be appropriately compounded.

The degree of compression represented by the following formula (1) must be set to 11% or less in the powdery semiconductor encapsulating material obtained by using the thermosetting resin composition. According to the present invention, the compression degree of the granular semiconductor encapsulating material is set to 11
By setting the content to not more than%, the greatest feature is to prevent adhesion to a hopper or the like and a crosslinking phenomenon, and to obtain a sealing material exhibiting stable fluidity and measurement accuracy. Note that the degree of compression is usually set within a range of 6 to 11%.

[0022]

(Equation 4)

The initial bulk density and the tap bulk density in the above formula (1) are values measured in accordance with JIS R 1628-1997, especially in accordance with the constant volume measurement method. Using a sample arbitrarily extracted from the entire material (population), it is usually measured as follows. That is, first, in a bottomed cylindrical measurement container,
Fill the sample until it overflows. Next, the sample raised from the upper end surface of the measuring container is cut off using a cutting plate (blade). Then, the mass of the sample is calculated by subtracting the mass of the measurement container itself from the mass of the measurement container filled with the sample, and the value is divided by the volume of the measurement container (the mass of the sample / the volume of the measurement container). Calculate the bulk density.

Next, an auxiliary cylinder is added to the measurement container filled with the sample after the grinding, and the sample is further filled. In this state, tapping is sufficiently performed using the tap device shown in FIG. 1 (tap speed 60 times / minute, tap time 3 minutes). The illustrated tap device is a device having a mechanical tap mechanism using the cam 1.
By the cam 1, the measuring container 3 with the auxiliary cylinder on the tap rod 2 moves up and down, and the sample in the measuring container 3 with the auxiliary cylinder is compressed. In the figure, 4 is a tap block. Thereafter, the auxiliary cylinder is removed, and the sample raised from the upper end surface of the measurement container is scraped off, and the mass of the sample is calculated in the same manner as described above. Then, the mass of the sample after tapping is divided by the volume of the measurement container (the mass of the sample / the volume of the measurement container) to calculate the tap bulk density.

The above initial bulk density and tap bulk density can be usually obtained as a loose apparent specific gravity and a solid apparent specific gravity using a powder tester manufactured by Hosokawa Micron Corporation.

In the present invention, as the initial bulk density and the tap bulk density for calculating the degree of compression, a five-point average value of the initial bulk density and the tap bulk density obtained as described above is usually used.

The above-mentioned thermosetting resin composition is used as the powdery or granular semiconductor encapsulant having the above-mentioned degree of compression set in a specific range.
It can be produced by various methods such as pulverization, granulation, extrusion cutting, sieving or the like, alone or in combination. Examples thereof include the following two methods.

[First Method] First, the respective components of the thermosetting resin composition are blended at a predetermined ratio and mixed using various mixers. Next, the mixture is usually melt-kneaded for several minutes to several hours using a melt-mixing pot, a heating roll, a screw-type kneader or an extruder. At this time, the resin temperature is 7
It is preferable that the temperature is set in the range of 0 to 120 ° C. When the resin temperature is lower than 70 ° C., the melting of the resin component is insufficient, and the dispersion between the resin and the inorganic filler may be poor. Conversely, when the temperature exceeds 120 ° C., the curing proceeds and the viscosity increases. This is because there is a possibility that a semiconductor element or the like may be damaged at the time of sealing. When a screw-type device is used, the rotation speed is preferably set in a range of 20 to 150 rpm. By this operation, a semi-solid resin composition is obtained at the above-mentioned resin temperature.

Next, the obtained kneaded material is rolled with a roll and cooled to obtain a plate-like body. It is preferable that the thickness of the plate is set to 3 mm or less, usually in the range of 0.5 to 1 mm. This is because if the thickness of the plate-like body is too large, it is difficult to pulverize and the particle size adjustment may be difficult.

Then, the obtained plate-like body is pulverized using various pulverizers to obtain a pulverized material. As the above crusher,
Although a hammer mill that crushes by an impact force is generally used, a roll mill or the like that crushes by applying pressure between a pair of rolls in which irregularities mesh with each other can be used. The number of rotations of the pulverizing unit is usually 2000 to 3000 r in the case of a hammer mill.
pm, in the case of a roll mill, 100 to 1000 rpm
m. After the pulverization, for example, using a vibrating feeder, the mixture is passed through 9 meshes, and the remaining powders on the 80 meshes are collected to obtain the desired powdery and granular semiconductor sealing material.

[Second Method] First, a pulverized product is obtained in the same manner as in the first method. Next, the obtained pulverized material is sieved. This sieving, for example, using a vibration feeder,
After passing through 9 meshes, it is performed by collecting what remains on 80 meshes. Then, it is charged into a stirrer having a stirring blade installed at the center in a mortar-shaped container provided with a heating device outside, and usually 100 to 1500 r.
Stir at about pm. By this operation, only the surface of the pulverized material is melted to form a corner of the pulverized material. As this stirrer,
A Henschel mixer manufactured by Mitsui Mining Co., and a super mixer manufactured by Kawata are generally known. Then, by sieving as required, a desired powdery semiconductor encapsulating material can be obtained.

It is preferable that the powdery semiconductor encapsulating material of the present invention has a packing density represented by the following formula (2) set to 46% or more. That is, when the packing density is less than 46%, there are many voids between particles in the hopper, and the fluidity of the powdery semiconductor encapsulating material becomes unstable, and the measurement accuracy tends to decrease. . As a result, defects such as voids tend to occur in a molded product obtained by molding the granular semiconductor sealing material.

[0033]

(Equation 5)

The initial bulk density in the above formula (2) can be obtained in the same manner as described above, using a sample arbitrarily extracted from the whole (population) of the above-mentioned granular semiconductor encapsulating material.

The true specific gravity in the above equation (2) is calculated according to JIS.
It is a value measured in accordance with the method A (in-water replacement method) in accordance with K 7112-1980, and the cured product of the sample arbitrarily extracted from the entire powdery and granular semiconductor encapsulating material (population) It is measured using The cured product is usually produced by transfer molding (molding pressure: 70 kgf / cm ² ) the extracted sample (powder-grained semiconductor sealing material). Other curing conditions are not particularly limited as long as curing is sufficiently advanced. For example, in the case of an epoxy resin composition, 175 ° C. × 70 kgf / cm ²
× 2 minutes transfer molding, followed by 17
After-curing at 5 ° C. for 5 hours is the curing condition.

In the present invention, as the initial bulk density and the true specific gravity for calculating the packing density, a five-point average value of the initial bulk density and the true specific gravity obtained as described above is usually used.

The powdery and granular semiconductor encapsulating material of the present invention is an 80 mesh pass product occupying the whole (using a Tyler standard sieve).
Is preferably set to less than 15% by weight. More preferably, it is less than 5% by weight. That is, when the content ratio of the 80-mesh pass product is 15% by weight or more, the amount of adhering and depositing on a hopper or the like increases, so that clogging is likely to occur. This is because a defect may occur in the semiconductor device. Further, since a large amount of fine particles that pass through the 80 mesh are included, the environment in which the semiconductor device is manufactured may be contaminated by dust. In addition, the measurement of the content ratio of the 80-mesh pass product is also usually performed using a sample arbitrarily extracted from the whole (population) of the granular semiconductor encapsulating material.

Further, as the powdery and granular semiconductor encapsulating material of the present invention, it is preferable that the whole is a 4-mesh pass product (using a Tyler standard sieve). That is, if there are large particles that do not pass through the 4-mesh, clogging may occur in the transfer process, or the measurement result may greatly change depending on whether one or two large particles are contained. In addition, the measurement of the content ratio of the 4-mesh pass product is also usually performed using a sample arbitrarily extracted from the whole (population) of the granular semiconductor encapsulating material.

The production of a semiconductor device using the granular semiconductor encapsulating material of the present invention can be carried out by various conventionally known methods.
After loading into a hopper (capacity: about 50 to 100 cc) which is generally conical and whose top is a lower supply port,
The semiconductor encapsulation can be performed by introducing into a mold having a plurality of pots by an automatic metering and feeding device having a system for measuring the weight.

Next, examples will be described together with comparative examples.

First, prior to Examples and Comparative Examples, thermosetting resin compositions having the following compositions were prepared.

[Blending Composition of Thermosetting Resin Composition] Cresol novolak type epoxy resin 7 parts by weight (epoxy equivalent 195 g / ep) Brominated epoxy resin 2 parts by weight Phenol novolak resin 6 parts by weight (hydroxyl equivalent 175 g / ep) Phosphorus System hardening accelerator 0.5 parts by weight Carnauba wax 0.5 parts by weight Inorganic filler (fused silica powder) 81 parts by weight Antimony trioxide 2 parts by weight Carbon black 0.5 parts by weight Silane coupling agent 0.5 parts by weight

[0043]

Example 1 First, the thermosetting resin composition having the above composition was stirred for 2 minutes using a super mixer manufactured by Kawata Corporation. Next, the obtained product is melt-kneaded using a twin-screw extruder under the conditions of a screw rotation of 80 rpm and a resin temperature of 95 ° C., and is rolled with a roll so that the discharged product has a thickness of about 0.5 to 1 mm. And air cooled on a steel belt. Next, the obtained plate-shaped body was
Pulverization was performed at 600 rpm to obtain a primary pulverized product. Then, the primary pulverized product was passed through 9 mesh using a vibration feeder, and the material remaining on 80 mesh was collected, and this was designated as Example 1 product.

[0044]

Example 2 To a product of Example 1 (80 mesh on product) was added an 80 mesh pass product corresponding to the amount of 10% by weight, and the mixture was mixed for 3 minutes with a rocking mixer to obtain a product of Example 2.

[0045]

Example 3 A plate obtained in the same manner as in Example 1 was used.
The mixture was put into a roll grinder manufactured by Nippon Granule Co., Ltd., and pulverized at a roll rotation speed of 500 rpm. This roll crusher is a pair of rolls having a triangular groove in the circumferential direction (dimensions: diameter 150 mm, groove depth: 1 mm, groove pitch:
1.5 mm) is a device in which the grooves are arranged so as to mesh with each other, and the supplied plate-like body is pulverized at the meshing portion of the rolls by rotating the pair of rolls in different directions. It has become. Thereafter, the obtained pulverized product was sieved with a 4-mesh sieve, and the obtained product was used as Example 3.

[0046]

Example 4 The product of Example 3 was charged into a granulator (20 liter supermixer) having a stirring blade installed at the center in a mortar-shaped container equipped with an external heating device, and an external bath. Granulation was performed at a temperature of 65 ° C. and a stirring blade of 400 rpm for 25 minutes, air-cooled, and sieved with a 4-mesh sieve to obtain a product of Example 4.

[0047]

Example 5 The product of Example 3 was sieved with a 24-mesh sieve, and the residue on the sieve was used as the product of Example 5.

[0048]

Comparative Example 1 Comparative Example 1 was obtained in the same manner as in Example 2 except that an 80-mesh pass equivalent to the amount of 15% by weight was added to Example 1 (80 mesh-on). Was.

[0049]

Comparative Example 2 The primary pulverized product obtained in Example 1 was used in Comparative Example 2.
Product.

With respect to the powdery and granular semiconductor encapsulating materials thus obtained in Examples and Comparative Examples, the content ratio of 80 mesh pass products in the whole, the content ratio of 6 mesh pass products in the whole, The content ratio of the 4-mesh pass product in the whole was measured, and the results are shown in Tables 1 and 2 below.

Using a powder tester manufactured by Hosokawa Micron Co., Ltd., the initial bulk density (loose apparent specific gravity, average value of n = 10) and tap bulk density (solid apparent specific gravity, n = 10) according to the method described above. ) And the degree of compression represented by the above formula (1), and the results are shown in the same table. The measurement container used was a SUS304 material having a cylindrical shape with a bottom and a volume of 100 cc. The tapping was performed under the conditions of a tap height (distance between the impact surface of the tap rod 2 and the tap block 4; see FIG. 1), a tap speed of 60 times / min, and a tap time of 3 minutes.

Further, the initial bulk density (loose apparent specific gravity, average value of n = 10), the true specific gravity, and the packing density represented by the above equation (2) were determined in accordance with the above-mentioned method. It is also shown in the table.

Then, each of the granular semiconductor encapsulating materials is actually placed in a hopper of a semiconductor manufacturing apparatus using a multi-plunger system (an approximately conical shape having a top serving as a lower supply port (upper diameter: 50 mm, supply diameter) : 10mm, height 70
mm, capacity: 57 cc)] to manufacture a semiconductor device. Then, the presence or absence of clogging in the hopper was confirmed, and a reliability test was performed on the obtained semiconductor device by the following method. The results are shown in the same table.

[Reliability Test of Semiconductor Device (Molding Void Test)] Molding conditions: Molding temperature: 175 ° C. Injection time: 100 kgf / cm ² Injection time: 7 seconds Package QFP 80 pin, 20 mm long × 14 mm wide
× Thickness 2.7mm Molded void evaluation: SAT and soft X-ray measurement revealed a diameter of 0.
Count voids of 1 mm or more (count for 32 cavities and find the average number per cavity).

[0055]

[Table 1]

[0056]

[Table 2]

From the results shown in Tables 1 and 2, it can be seen that all of the products of the examples do not cause clogging in the hopper, and a highly reliable semiconductor device is obtained. On the other hand, Comparative Examples 1 and 2 both have a degree of compression of more than 11%, indicating that clogging has occurred in the hopper.

Observation of the particle shapes of the first, third, and fourth products of Example 3 showed that the particles were rounded without corners in the order of the third, first, and fourth products, and that the particles were in the longitudinal direction. It can be confirmed that the ratio between the width and the direction (width) perpendicular to the width is close to 1, and the packing density is also high.

[0059]

As described above, the powdery and granular semiconductor encapsulating material of the present invention comprises a thermosetting resin composition and has the formula (1)
Is set in a specific range. For this reason, adhesion to a hopper or the like, which has been a problem in the past, and clogging due to a crosslinking phenomenon are improved, and stable fluidity and measurement accuracy are exhibited. Therefore, a semiconductor device obtained by using the above-mentioned powdery semiconductor encapsulating material has high reliability in which occurrence of defects such as voids is suppressed.

In particular, when the packing density is set in a specific range and the ratio of 80 mesh pass products is set in a specific range, the fluidity is particularly low. It is advantageous in that defects such as voids are suppressed, and as a result, a highly reliable semiconductor device can be obtained. There is also an advantage that generation of dust due to fine powder can be suppressed.

In addition, among the above-mentioned powdered and granular semiconductor sealing materials, when the whole is made of a 4-mesh pass product and the content ratio of the 80-mesh pass product is set in a specific range, the powdered and granular semiconductor sealing material is used. Since there are no large particles that do not pass through the 4 mesh in the stopper material, the measurement accuracy is good, and it is difficult to form a large void, and as a result, there is an advantage that a highly reliable semiconductor device can be obtained. There is also an advantage that generation of dust due to fine powder can be suppressed.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram illustrating an example of a tap device.

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Claims (4)

[Claims] 1. A powdery and granular semiconductor encapsulant made of a thermosetting resin composition, wherein the compression degree represented by the following formula (1) is 1
A powdery and granular semiconductor encapsulating material, which is set to 1% or less. (Equation 1) 2. A powdery and granular semiconductor encapsulating material made of a thermosetting resin composition containing an inorganic filler, wherein the packing density represented by the following formula (2) is set to 46% or more, and 2. The powdery and granular semiconductor encapsulating material according to claim 1, wherein the content of the 80-mesh pass product is set to be less than 15% by weight in the entire powdery and granular semiconductor encapsulating material. (Equation 2) 3. A powdery and granular semiconductor encapsulating material comprising a 4-mesh pass product, wherein the content ratio of an 80-mesh pass product is set to less than 15% by weight of the whole powdery and granular semiconductor encapsulating material. Semiconductor sealing material. 4. A semiconductor device comprising a semiconductor element encapsulated with the granular semiconductor encapsulating material according to claim 1.