JP2000286188A - Projection aligner, substrate history-retaining apparatus, and storage medium with substrate history retention program stored therein - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a projection aligner, a substrate history-retaining apparatus, and a storage medium for storing a substrate history retention program for reducing load of a host computer and preventing a substrate treatment history from being lost, even if the host computer or a network fails. SOLUTION: A projection aligner 1, that is connected to a host computer 2 and treats a substrate, is provided with a storage means 4 for storing the treatment history of a substrate being treated by the projection aligner 1 and a reporting means 5 for reporting the treatment history to the host computer 2, in response to the request of the host computer 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a semiconductor device,
The present invention relates to an apparatus for holding a substrate processing history of an exposure apparatus used in a photolithography process in manufacturing a display including a liquid crystal device, a plasma display, or the like, or a thin film magnetic head, and a storage medium storing a program.

[0002]

2. Description of the Related Art Manufacturing processes for semiconductor devices including integrated circuits and CCDs, liquid crystal devices, thin-film magnetic heads, and the like usually include a process called photolithography. In this photolithography process, a photoresist (photosensitive agent) is applied on a semiconductor wafer or a glass plate, and a pattern of a mask (including a reticle, hereinafter referred to as a reticle) is exposed on the photoresist layer. A mask pattern is formed on the photoresist layer by performing development.

The process of applying a photoresist to a substrate such as a semiconductor wafer and the process of developing the substrate after exposure are processed by an apparatus called a coater / developer, and precisely aligned with the substrate on which the photoresist is applied. The step of transferring a fine pattern on the reticle with the resolution required for the fine pattern is performed by a projection exposure apparatus.

In a production line that handles mass-produced devices, a plurality of projection exposure apparatuses and a coater / developer are used in parallel. In such a production line, it is necessary to increase the operation rate of the apparatus. Therefore, the projection exposure apparatus and the coater / developer included in the production line are connected to a host computer that controls the projection exposure apparatus and the coater / developer. Often have.

The conventional projection exposure apparatus does not have a function of retaining a processing history of a substrate processed by the projection exposure apparatus. For this reason, the processing history of the substrate includes a period from when the projection exposure apparatus starts processing the substrate to when the processing ends,
The projection exposure apparatus is reported in real time to a host computer connected thereto, and the host computer needs to receive the report in real time and hold the report contents in the host computer. Furthermore, depending on the held report content, there is a case where it is necessary to perform a totaling process on the report content, and in such a case, it is necessary to perform the totalizing process in the host computer.

As an example of the substrate processing history, there is the number of occurrences of errors in substrate processing of a certain lot in a projection exposure apparatus. The number of occurrences of this error is reported to the host computer every time an error occurs in the projection exposure apparatus.
The host computer receives the report from the projection exposure apparatus in real time from the start to the end of the substrate processing of a certain lot in the projection exposure apparatus, stores the received content, and stores the received report after the lot processing is completed. The contents are totaled, and the number of error occurrences of this lot is calculated.

[0007]

However, in the above-described system, the host computer receives the reported processing history in real time from the start of the processing of the substrate by the projection exposure apparatus to the end thereof. However, since the received contents must be stored, there is a problem that the load on the host computer is heavy.

If the processing history is data that requires tabulation, the host computer must tabulate the stored data after the processing of the substrate by the projection exposure apparatus is completed. The burden is even greater.

Further, when the host computer or the network connecting the host computer and the projection exposure apparatus break down, the substrate processing history data transmitted by the projection exposure apparatus in real time disappears without being stored anywhere. There is a problem that history does not remain.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and reduces the load on a host computer.
Further, an object of the present invention is to provide an exposure apparatus, a substrate history holding device, and a storage medium storing a substrate history holding program in which a substrate processing history is not lost even when a host computer or a network fails.

[0011]

According to a first aspect of the present invention, there is provided an exposure apparatus connected to a host computer for storing a processing history of a substrate processed by the projection exposure apparatus in an exposure apparatus for processing a substrate. An exposure apparatus, comprising: means for reporting the processing history to a host computer in response to a request from the host computer.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of an embodiment of the present invention will be described with reference to FIG. The semiconductor exposure apparatus 1 is an apparatus that performs a process of projecting a fine reticle pattern onto a semiconductor wafer coated with a photoresist (photosensitive agent) and exposing the photoresist, and a manufacturing line of the present embodiment includes: A plurality of semiconductor exposure apparatuses 1 are provided. A plurality of semiconductor exposure apparatuses 1; a host computer 2 for controlling these semiconductor exposure apparatuses 1 and devices on a manufacturing line (not shown) such as a coater / developer;
Connected by network. For this network, for example, a network (such as Ethernet) conforming to the standards such as SECS is used.

Each of the semiconductor exposure apparatuses 1 has a built-in computer 3 having a terminal for connecting to the network. Further, the computer 3 includes a storage unit 4 for storing a processing history of the semiconductor wafer processed by the semiconductor exposure apparatus 1, and, in response to a request from the host computer 2,
A report unit 5 for reporting the processing history of the semiconductor wafer stored in the storage unit 4 to the host computer 2 is provided. The output of the storage means 4 is connected to the input of the report means 5, and the output of the report means 5 is the output of the computer 3 incorporating the report means 5, and this output is transmitted via the network. Host computer 2
Has been entered.

Next, a schematic configuration of the projection exposure apparatus 1 used for manufacturing a semiconductor device will be described with reference to FIG. Reticle 6 with fine device pattern formed
Is mounted on a reticle stage 7 for aligning the reticle 6. Alignment involves, when forming a pattern on a semiconductor wafer or the like, superimposing patterns to be transferred onto a plurality of layers (layers), and accurately superimposing the patterns of these layers.

The reticle stage 7 has a mechanism for moving the position of the reticle 6 or changing its attitude in order to perform the alignment. The reticle 6 is moved in a direction (x-axis direction and y-axis direction) parallel to the upper surface of the reticle 6 by a mechanism for moving the position of the reticle 6.
And can be precisely moved in a vertical direction (z-axis direction). Further, it is possible to rotate the reticle 6 about the z-axis direction or change the inclination of the reticle 6 (that is, rotate the reticle 6 about the x-axis and y-axis directions) by a mechanism for changing the attitude of the reticle 6. Has become. On the reticle 6, an alignment mark used for alignment is provided. Note that the z-axis coincides with the optical axis of the projection optical system 10, and the x-axis and the y-axis are orthogonal to each other in a plane perpendicular to the optical axis.

Further, above the reticle stage 7,
A reticle alignment sensor 8 for detecting the position and orientation of the reticle 6 by detecting a positioning mark on the reticle 6 is provided. An illumination system 9 is provided above the reticle 6, and the reticle 6 is illuminated by the illumination system 9. A projection optical system 10 is provided below the reticle stage 7, and a wafer stage 11 is provided below the projection optical system 10. A semiconductor wafer 12 to be exposed is placed on the wafer stage 11.

The wafer stage 11 has a movable mechanism for precisely moving the semiconductor wafer 12 placed on the wafer stage 11 in directions parallel to the upper surface of the semiconductor wafer 12 (x-axis direction and y-axis direction). . By this movable mechanism, the semiconductor wafer 12 is precisely moved in the x-axis direction and the y-axis direction, and a step-and-repeat method is used.
Exposure for each shot can be repeated by either the step-and-scan method or the step-and-stitch method.

The movable mechanism is also used for alignment of the semiconductor wafer 12. For this reason, the movable mechanism
The semiconductor wafer 12 can be moved not only in a direction parallel to the upper surface of the semiconductor wafer 12 (x-axis direction and y-axis direction) but also in a direction perpendicular to the upper surface of the semiconductor wafer 12 (z-axis direction). Further, the posture of the semiconductor wafer 12 is changed, that is, the semiconductor wafer 12 is rotated around the z-axis direction, or the inclination of the upper surface of the semiconductor wafer 12 is changed (that is, the x-axis and y-axis are changed).
It is also possible to rotate each axis about the axis direction). In order to change the tilt of the semiconductor wafer 12, the movable mechanism of the wafer stage 11 is supported at three points, and these three points can be individually moved up and down. The movable mechanism also has a mechanism for moving the entire semiconductor wafer 12 in the z-axis direction, and this mechanism is used for focusing a projected image projected on the semiconductor wafer 12. Note that the z-axis coincides with the optical axis of the projection optical system 10, and the x-axis and the y-axis are orthogonal to each other in a plane perpendicular to the optical axis.

In order to detect the position of the semiconductor wafer 12, an off-axis wafer alignment sensor 13 is provided above the wafer stage 11, and an on-axis (TTL type) is provided above the projection lens 10. A wafer alignment sensor 14 is provided. Although not shown, there is also provided an autofocus sensor that irradiates the semiconductor wafer 12 with a light beam from an oblique direction and detects the attitude (position and inclination in the z direction) of the semiconductor wafer 12.

Further, as described with reference to FIG. 1, the semiconductor exposure apparatus 1 has a built-in computer 3 for controlling each component of the semiconductor exposure apparatus 1. The computer 3 is connected to the illumination system 9, reticle stage 7, reticle alignment sensor 8, wafer stage 11, wafer alignment sensors 13, 14, and the like.

The computer 3 incorporates the storage means 4 and the reporting means 5 described with reference to FIG. 1, and outputs the output of the reporting means 5 to the outside of the computer 3 and further outputs the output to the outside of the semiconductor exposure apparatus 1. And can be connected to the network.

Next, the general operation of the semiconductor exposure apparatus 1 will be described. The light emitted from the illumination system 9 illuminates the reticle 6, and a reticle image by the reticle 6 is projected onto the projection optical system 10.
And the semiconductor wafer 12 on the wafer stage 11
Projected to The position and orientation of reticle 6 are adjusted by reticle stage 7 based on information on the position and orientation of reticle 6 detected by reticle alignment sensor 8. The position and posture of the semiconductor wafer 12 are adjusted by the wafer stage 11 based on information on the position and posture of the semiconductor wafer 12 detected by the wafer alignment sensor 12 or 13.

The reticle image projected on the semiconductor wafer 12 is focused and leveled by a moving mechanism in the z-axis direction of the wafer stage 11 and an autofocus mechanism (not shown). Then, the semiconductor wafer 12 is sequentially moved by the moving mechanism in the x-axis direction and the y-axis direction of the wafer stage 11, and the reticle image is repeatedly exposed on the semiconductor wafer 12 for each shot.

By the above operation, the semiconductor wafer 1
A reticle image is projected onto a predetermined position on the semiconductor wafer 12 with required positional accuracy, and the photoresist applied on the semiconductor wafer 12 is exposed to form a pattern.

Next, a schematic operation of the present embodiment will be described with reference to an operation conceptual diagram of FIG. Host computer 2
Is a lot history stored in a storage means 4 further built in a computer 3 built in the semiconductor exposure apparatus 1,
That is, in order to acquire the processing history of a wafer of a certain lot, the semiconductor exposure apparatus 1 is queried by designating the lot name or lot ID. Upon receiving the inquiry, the semiconductor exposure apparatus 1 reports all the lot histories of the designated lot to the host computer 2.

When the host computer 2 inquires of the semiconductor exposure apparatus 1 by designating a specific data name in the lot history as a parameter together with the lot name or lot ID, and inquiring the semiconductor exposure apparatus 1, The exposure apparatus 1 reports only specified specific data from the lot history to the host computer 2. For example, if the exposure time, focus offset, and correction value are specified as parameters along with the lot name, only the exposure time, focus offset, and correction value of the specified lot are reported.

Specific examples of the lot history include the following lot processing-related and error-related ones. Specific examples of the lot processing relation include a reticle alignment result, a reticle exchange start time and an end time, a process program name, an exposure time, a focus offset, a correction value (shift, scaling, orthogonality, rotation amount, shot magnification, shot rotation amount). , Leveling offset, etc.), wafer alignment measurement results, number of processed wafers, lot processing start time and end time, and the like.

Hereinafter, each of these specific examples will be described with reference to FIG. First, the reticle alignment result is an alignment result of the reticle 6 with respect to the wafer stage 11. One specific example of the alignment result is as follows. That is, first, without placing anything on the wafer stage 11, the wafer stage 1
1. The movable mechanism in the x-axis direction and the y-axis direction is adjusted to the reference position. Next, an image of the alignment mark provided on the reticle 6 is projected onto the wafer stage 11, and the projected image and the alignment mark separately provided on the wafer stage 11 are combined with the reticle on which the reticle 6 is mounted. The adjustment is performed by moving the movable mechanism of the stage 7 in the x-axis direction and the y-axis direction. At this time, the shift amount of the reticle stage 7 relative to the reference position of the movable mechanism in the x-axis direction and the y-axis direction is a specific example of the alignment result.
As another specific example, there is a rotation amount and a tilt of the movable mechanism of the reticle stage 7. Alternatively, wafer stage 1
Define one movement (ie defined by interferometer)
The projection position of the alignment mark on the reticle 6 in the orthogonal coordinate system xy may be used.

The reticle change start time and end time are defined as, for example, when the semiconductor wafer 12 is exposed to different reticle patterns a plurality of times, the reticle 6 needs to be changed.
Are the start time and end time of the exchange operation.

The reticle 6 is automatically replaced by a device called an auto reticle loader (not shown). The auto reticle loader includes a reticle library capable of storing a plurality of reticles, a foreign substance detection unit, and a transport unit. First, the used reticle 6 is removed from the reticle stage 7 of the semiconductor exposure apparatus 1 by the transport unit of the auto reticle loader, the removed reticle 6 is transported to the reticle library, and the transported reticle 6 is loaded on the reticle. Stored in the library. Then, another reticle 6 to be used next is taken out of the reticle library, and the taken out reticle 6 is transported to the foreign matter detection unit. The foreign matter detection unit inspects foreign matter on the front and back surfaces of the reticle 6 that has been transported by scanning with a laser beam. If the inspection passes, this reticle 6
Is transported again to the reticle stage 7 of the semiconductor exposure apparatus 1 by the transport unit, and the transported reticle 6 is placed on the reticle stage 7. The above operation is the reticle 6 exchange operation.

The process program name is a name of a process used for each lot of the semiconductor wafer 12.

The exposure time is an exposure time for exposing the projected image of the reticle 6 on the photoresist applied on the semiconductor wafer 12. The exposure time needs to be changed according to the type or characteristics of the photoresist, the intensity of exposure illumination light emitted from the illumination system 9, and the like. In addition,
When the exposure illumination light is pulse light, the semiconductor wafer 1
2 is the number of pulses to be applied to each point in the exposure area on 2.

Next, the focus offset will be described. When projecting the image of the reticle 6 onto the semiconductor wafer 12, the autofocus mechanism and the movable mechanism of the wafer stage 11, which are not shown, move the entire semiconductor wafer 12 in the z-axis direction. Although the focus is adjusted, each member of the semiconductor exposure apparatus 1 (for example, each optical element of the projection optical system 10) or the semiconductor wafer 12 itself may be delicate with the passage of time for processing the lot, for example, by irradiation of exposure illumination light. And the focal position shifts, and this shift amount is called a focus offset. Based on this focus offset, the reticle stage 7, the wafer stage 1
1 or the projection optical system 10 or the like is driven to prevent a focus shift.

Next, the correction value will be described. In manufacturing an integrated circuit or the like, the reticle pattern is transferred to a predetermined layer on the semiconductor wafer 12 by the semiconductor exposure apparatus 1, and a pattern is formed using another apparatus (such as a coater / developer). Another pattern is formed by superimposing another pattern on the layer. At this time, the patterns of each layer must overlap exactly. However,
If a process such as applying heat to the semiconductor wafer 12 is performed, the semiconductor wafer 12 may be slightly deformed, and a projection image of another pattern may be shifted from a pattern of a predetermined layer. A parameter for correcting this is the correction value. The correction value is calculated by detecting the position of a mark provided in a shot or a wafer in the lower layer pattern.

Of the correction values, the shift is a correction value for the movement of the pattern on the semiconductor wafer 12 in the x-axis direction or the y-axis direction. The term “scaling” refers to a correction value for a change in scale (expansion or contraction) in the x-axis direction or the y-axis direction.

Next, the orthogonality of the correction values will be described. If the angle between the x-axis and the y-axis of the previously formed lower layer pattern is deviated from orthogonal by heat treatment or the like, the degree of orthogonality of the upper layer pattern created by overlapping the lower layer pattern must also match the lower layer pattern. , Patterns do not overlap exactly. The correction value at this time is the orthogonality.

Next, the rotation amount of the correction values will be described. As in the case of the orthogonality, when a plurality of layers of patterns are stacked, if the entire lower layer pattern previously formed has been rotated due to a cause such as heat treatment, the upper layer pattern needs to be formed in accordance with the amount of rotation. There is. The correction value at this time is the amount of rotation. Note that this rotation amount is the rotation amount of the pattern coordinate system on the entire pattern formed on one semiconductor wafer 12, that is, on the semiconductor wafer 12.

Next, the shot magnification among the correction values will be described. The scaling is a measure of the extent of expansion or contraction in the x-axis direction or y-axis direction individually.
The shot magnification is a scale that is taken as the magnification of a one-shot pattern when the image is expanded and contracted at the same ratio in the x-axis direction and the y-axis direction. The shot rotation amount of the correction values is not a rotation amount of the entire pattern (array coordinate system) but a correction value of an individual rotation amount in each shot.

Next, the leveling offset among the correction values will be described. The surface of the semiconductor wafer 12 placed on the wafer stage 11, that is, the exposure surface should ideally be parallel to the imaging plane of the projection optical system 10. In the process of applying a high temperature to form the image, distortion such as warpage or undulation occurs, and the image forming surface is inclined or curved due to various aberrations. Therefore, there are places on the semiconductor wafer 12 where the exposure surface is not parallel to the imaging surface. In such a case, there arises a problem that the reticle image is not always focused on the entire surface of one shot, that is, the exposure surface does not fall within the depth of focus of the projection optical system. Therefore, the three points supporting the wafer holder on the wafer stage 11 are moved up and down, and the shot area on the semiconductor wafer 12 is tilted so that the entire surface is set within the depth of focus. This is called leveling. The tilt of the exposed surface is
For example, the leveling varies due to repetition of the high-temperature process or varies depending on the lot structure of each lot. Therefore, it is necessary to correct the leveling, and the correction value at this time is the leveling offset.

Next, the results of the wafer alignment measurement of the correction values will be described. In the above reticle alignment, the positional relationship between the reticle 6 and the wafer stage 11 is grasped, and further, the positional relationship between the wafer stage 11 and the semiconductor wafer 12 mounted on the wafer stage 11 is grasped. Thereby, the positional relationship between reticle 6 and semiconductor wafer 12 can be grasped. In order to grasp the positional relationship between the wafer stage 11 and the semiconductor wafer 12, an alignment mark formed on the semiconductor wafer 12 is detected by a wafer alignment sensor 13 or 14 fixed at a predetermined position of the semiconductor exposure apparatus 1. Then, the coordinates of the wafer stage 11 at this time, that is, the displacement from the reference position are detected, and the positional relationship between the wafer stage 11 and the semiconductor wafer 12 is calculated from the detection result. This calculation result is a wafer alignment measurement result.

Specific examples of the error relation include an error code of an error generated in wafer alignment and image data at the time of error occurrence, an error code of an error generated in reticle alignment and image data at the time of error occurrence, and the like. A specific example of the error is that a mark could not be detected in the alignment.

Among the lot histories related to the lot processing and the error, the lot history for which the semiconductor wafer 12 needs to be specified is the wafer I of the corresponding semiconductor wafer 12.
Along with D, it is held in the storage means 4 in the semiconductor exposure apparatus 1.

Further, as specific examples of the lot history requiring aggregation, the operation rate, reticle exchange time, lot processing time, wafer alignment error occurrence time, number of wafer alignment errors, reticle alignment error occurrence time, reticle alignment error occurrence There are the number of errors, the total time of error occurrence, the total number of error occurrences, and variations in the wafer alignment measurement results.

Each of the above specific examples will be briefly described. The operation rate is the number of wafers or the number of shots processed per unit time. The reticle exchange time is a time required for exchanging the reticle 6 for the purpose of exposing a plurality of patterns in an overlapping manner, and is calculated from the reticle exchange start time and end time. The lot processing time is the total time required for processing a certain lot, and is calculated from the lot processing start time and the end time.

What is the wafer alignment error occurrence time?
This is the total time during which a wafer alignment error has occurred in the processing of a certain lot. The number of occurrences of wafer alignment errors is the total number of wafer alignment errors that occurred during processing of a certain lot. The reticle alignment error occurrence time and the number of reticle alignment error occurrences are the same as described above.

The total error occurrence time is the sum of the wafer alignment error occurrence time and the reticle alignment error occurrence time, and the total number of error occurrences is
It is similar to this. The variation in the wafer alignment measurement result is the variation in the lot of the wafer alignment measurement result.

The counting of these lot histories is performed by the computer 3 in the semiconductor exposure apparatus 1, and the counting result is stored in the storage means 4 built in the computer 3 in the semiconductor exposure apparatus 1. If there is a request from the host computer 2 to report the tally result, the report means 5 built in the computer 3 in the semiconductor exposure apparatus 1 immediately reports the tally result held in the storage means 4. Can be.

Next, referring to the flowchart of FIG.
A detailed operation when the semiconductor exposure apparatus 2 reports a lot history to the host computer 1 will be described. However, S1 and the like in the following text represent steps in the flowchart. From the host computer 1 to the semiconductor exposure apparatus 2,
This flow starts when an inquiry about a lot history is made by designating a lot name (S1). First, it is searched whether or not the storage means 3 built in the semiconductor exposure apparatus 2 holds the lot history of the designated lot name (S2). As a result of the search, the flow branches depending on whether or not there is a designated lot name (S3). If there is a designated lot name, the flow proceeds to S4, and if not, the flow proceeds to S10. S1
The operation of 0 will be described later.

If the designated lot name is retrieved, it is checked whether or not the parameter is specified in the inquiry from the host computer 1 (S4). If the parameter is specified, the process proceeds to S5, and if not, the process proceeds to S7. move on. When the parameter is specified, only the lot history data of the specified parameter is extracted (S5). Then, the extracted lot history data is set as report data to the host computer 1 in the report means 4 built in the semiconductor exposure apparatus 2 as in the storage means 3 (S6).
If no parameter is specified, all data of the lot history with the specified lot name is set as report data in the report means 4 (S7).

As a step following S6 and S7, it is determined whether or not there is a lot history having the same lot name.
The search is continued in S2. That is, the search is continued from the data subsequent to the lot history data searched in S3 (S8). This is because the same lot may be processed a plurality of times by the semiconductor exposure apparatus 2, and a plurality of lot histories with the same lot name may be stored in the storage unit 3. As a result of the continued search, the flow branches (S9). If there is a lot history with the same lot name, the flow returns to S4, and if not, the flow proceeds to S11.

Further, when there is a lot history of the same lot name, the same operation as that described above is repeated in S4 and S5, and report data is added to the report means 4 in S6 or S7. Then, the search is continued again at S8, and a branch is performed at S9 according to the result. Therefore, as long as there is a lot history of the same lot name, the flow continues to go around the loop of S4 to S9, and the report data is continuously added in S6 or S7. If all the lot histories with the same lot name have been searched, it is determined in S9 that there is no lot name, and in S11
Proceed to.

If the specified lot name is not found in the branch of S3, report data containing a report to the host computer 1 that there is no lot history with the specified lot name is sent to the reporting means 4. Is set (S1
0), the flow proceeds to S11.

In S11, the report data set in the reporting means 4 in S6, S7 or S10 is reported to the host computer 1, and the reporting operation from the semiconductor exposure apparatus 2 to the host computer 1 ends.

In the above embodiment, the semiconductor exposure apparatus has a built-in apparatus for holding a substrate history, but as another embodiment, a substrate history holding apparatus is provided separately from the semiconductor exposure apparatus. It is also possible to adopt a configuration in which the substrate history holding device, the semiconductor exposure device, and the host computer are connected via a network.

Further, besides the host computer for production management of the lithography process, which integrally controls a large number of manufacturing apparatuses (including an exposure apparatus and a coater developer) in a clean room, it is disclosed in, for example, JP-A-4-305913. Is connected to multiple exposure devices,
A dedicated computer is provided to collect and analyze the information specific to the exposure apparatus, and collects information on the exposure apparatus's device constants, operating parameters, wafer processing status, etc. via LAN communication without interfering with control by the host computer. Alternatively, the above-described history may be stored in a support system that controls the operation state of each exposure apparatus to be stably maintained. Each exposure apparatus is connected to both the host computer and the support system, and the support system is also connected to the host computer via a network.

Further, in the above-described embodiment, as the lot history of the error relation, the waveform data of the detection signal obtained from the mark whose position cannot be specified by the wafer alignment sensor, or the peripheral portion of the semiconductor wafer
When an error occurs in the bri-alignment device that detects a CD, image data or the like obtained from the CCD may be saved in the storage unit 4 in association with the wafer ID. Then, waveform data, image data, and the like may be read in accordance with a command from the host computer, and the data may be displayed on, for example, a display installed outside the clean room. This allows the operator to identify the cause of the error from the data without entering the clean room, and by instructing the exposure apparatus to change the processing conditions of the data, it is possible to prevent the occurrence of an error in another lot. This can be prevented.

Further, a storage device storing a program for performing the operation of the above embodiment is built in the semiconductor exposure apparatus,
The operation of the above-described embodiment can be realized by this program.

In the above embodiment, the exposure apparatus used for manufacturing a semiconductor device has been described. However, for example, a display device including a liquid crystal display device and a plasma display device, a thin film magnetic head, and an imaging device (CCD). The present invention can be applied to an exposure apparatus used for manufacturing. Also, a reticle or mask used in an exposure apparatus for device manufacturing for manufacturing semiconductor elements and the like,
Other than the electron beam exposure apparatus, for example, may be manufactured in a reduced projection type exposure apparatus using far ultraviolet light or vacuum ultraviolet light,
The present invention can be applied to an exposure apparatus used for manufacturing a reticle or a mask. In an exposure apparatus used for manufacturing a reticle or a mask, a parent pattern obtained by dividing an enlarged pattern of a pattern to be formed on a reticle or a mask into a plurality of patterns is transferred onto an original to be a reticle or a mask by, for example, a step-and-stitch method. Is what you do. Further, the present invention can be applied to a photo repeater.

Further, in the exposure apparatus shown in FIG. 2, the projection optical character system 10 is a reduction system, but the projection optical system 10 may be an equal magnification system or an enlargement system. In addition, the projection optical character system 10
May be any of a refraction system including only a plurality of refraction elements, a reflection system including only a plurality of reflection elements, and a catadioptric system including a refraction element and a reflection element. Further, the exposure apparatus of FIG. 2 may be of a proximity type without using a projection optical system or a contact type.

The exposure apparatus shown in FIG. 2 is limited to a static exposure system in which the reticle or mask and the photosensitive substrate are almost completely cleaned and the photosensitive substrate is exposed to illumination light for exposure through the reticle or mask. It is not something that is
-196513 and corresponding US Pat.
No. 410, a scanning exposure method in which a photosensitive substrate is relatively moved with respect to exposure illumination light in synchronization with relative movement of a reticle or mask with respect to exposure illumination light. Is also good.

Further, the exposure apparatus shown in FIG. 2 is not limited to the step-and-repeat system, but may be a step-and-scan system in which each exposure area (shot) on the photosensitive substrate is scanned and exposed. The step-and-stitch method may be used in which one pattern is transferred to a plurality of exposure areas by partially overlapping the exposure areas. The exposure apparatus shown in FIG. 2 may be of a mirror projection type in which a large number of patterns are formed on the entire surface of the photosensitive substrate by one scanning exposure operation. In addition,
In the step-and-stitch method, any of a static exposure method and a scanning exposure method may be used when transferring a pattern to each exposure area.

Further, g-rays (wavelength: 436 nm) and i-rays (wavelength: 365 nm) generated from a mercury lamp are used as exposure illumination light.
m), KrF excimer laser (wavelength 248 nm), Ar
Higher harmonics such as an F excimer laser (wavelength 193 nm), an F2 laser (wavelength 157 nm), an Ar2 laser, and a metal vapor laser or a YAG laser can be used. Further, a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or a fiber laser is amplified by, for example, a fiber amplifier in which erbium (or both erbium and yttrium) is doped,
In addition, a harmonic converted to ultraviolet light using a nonlinear optical crystal may be used. Further, the illumination light for exposure is not limited to the above-mentioned far ultraviolet region or vacuum ultraviolet region (wavelength 120 to 200 nm), but may be a laser plasma light source or a soft X-ray region (wavelength approximately 5 to 15 nm) generated from SOR. ), E.g., EUV (EUV at 13.4 nm or 11.5 nm)
xtreme Ultra Violet light, or hard X-ray territory (wavelength of about 1 nm or less)
It may be. In the EUV exposure apparatus, a reflective reticle (mask) is used, and the projection optical character system is a telecentric reduction system only on the image plane side, and only a plurality of (about 3 to 6) reflective optical elements are used. Is a reflection system.

Furthermore, the present invention can be applied to an exposure apparatus using a charged particle beam such as an electron beam and an ion beam. The electron beam exposure apparatus may use a direct writing method (for example, including a pencil beam method, a cell projection method, a variable shaped beam method, and a blanking aperture array method), or a projection method (eg, a transmission mask). 250 on the photosensitive substrate using
(A method of exposing an area of about nm square at a time).

By the way, a projection optical system in which a plurality of optical elements are incorporated in a lens barrel and at least a part of an illumination optical system composed of a large number of optical elements (including an optical integrator and the like) are connected to a plurality of protection optical systems. Fixed to a base supported by a vibration pad, adjusts the illumination optical system and the projection optical system, and connects wiring and piping to a reticle stage and a wafer stage consisting of many mechanical parts. By storing a program for executing the operation of the mode in a memory in a controller of the exposure apparatus main body, and performing a total adjustment (electrical adjustment, operation confirmation, etc.),
The projection exposure apparatus shown in FIG. 2 can be manufactured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

In the semiconductor device, a step of designing the function and performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and a step of exposing a reticle pattern by the exposure apparatus of FIG. It is manufactured through a step of exposing a wafer, a step of assembling a device (including a dicing step, a bonding step, and a package step), an inspection step, and the like.

[0066]

According to the present invention, the host computer does not have to wait for real-time reports from the projection exposure apparatus or store these reports.
When necessary, the history of the substrate held in the projection exposure apparatus can be acquired, so that the load on the host computer is reduced.

Even if the board history needs to be tabulated,
Aggregation can be performed by the projection exposure apparatus, and there is no need to perform aggregation by the host computer, so that the burden on the host computer is reduced.

Further, even when the host computer or the network fails, the substrate processing history data is lost in the storage means in the projection exposure apparatus, so that the substrate processing history data is lost and no history is left. It does not happen.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a semiconductor exposure apparatus.

FIG. 3 is a conceptual diagram illustrating a schematic operation according to an embodiment of the present invention.

FIG. 4 is a flowchart for explaining a detailed operation of one embodiment of the present invention.

[Explanation of symbols]

Reference Signs List 1 semiconductor exposure apparatus (exposure apparatus) 2 host computer 3 computer 4 storage means 5 reporting means 6 reticle 7 reticle stage 8 reticle alignment sensor 9 illumination system 10 projection optical system 11 wafer stage 12 semiconductor wafer 13 off-axis wafer alignment sensor 14 on Axis (TTL) wafer alignment sensor

Claims (7)

[Claims] 1. A computer connected to a host computer,
An exposure apparatus for processing a substrate, comprising: storage means for storing a processing history of a substrate processed by the exposure apparatus; and reporting means for reporting the processing history to a host computer in response to a request from the host computer. Exposure equipment characterized. 2. The exposure apparatus according to claim 1, wherein the processing history of the substrate is a processing history of the substrate in lot units. 3. The exposure apparatus according to claim 1, wherein the substrate history includes information on a processing condition when processing the substrate or an error that occurs when processing the substrate. 4. The exposure apparatus according to claim 1, further comprising processing means for processing the substrate history in response to a request from the host computer. 5. The exposure apparatus according to claim 4, wherein said processing means performs statistical processing of said substrate history. 6. A substrate history holding device connected to a host computer and an exposure apparatus for processing a substrate, wherein: storage means for storing a substrate history output from the exposure apparatus; and a substrate history in response to a request from the host computer. And a reporting means for reporting the result to a host computer. 7. Connected to a host computer,
Storing the substrate history of an exposure apparatus that processes the substrate; and storing the substrate history holding program, comprising: reporting the substrate history to the host computer in response to a request from the host computer. Medium.