JP2000277592A - Substrate holder - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate holder excellent in plasma stability in which the joint is not cracked even if it is subjected to a thermal load, e.g. repeated temperature rise or temperature drop, or exposed to high temperature atmosphere for a long time and the possibility of heavy metal contamination is eliminated by preventing a metallic electrode plate from being exposed to plasma. SOLUTION: The substrate holder comprises a basic body 2 of sintered ceramics, a sintered ceramics plate 3 entirely covering the joint face of the basic body, a metallic electrode plate 4 grasped between the basic body and the cover plate, and an applying electrode 5 having one end connected with the electrode plate wherein the basic body and the cover plate are jointed airtightly and an oxynitride glass layer containing at least two kinds of element selected from group III a elements, aluminum and silicon is formed on the joint interface.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holding apparatus used for processing a film on a wafer in a semiconductor manufacturing apparatus or the like.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process using plasma, various functions are required for a stage on which a substrate is mounted. For example, it has a plasma generation function, an electrostatic suction function for bringing a substrate into close contact with a stage, a temperature control function for keeping a substrate temperature constant, and the like. If all of these functions are provided by a single integrated stage, a compact and highly efficient substrate holding device can be obtained.

[0003] Conventionally, a metal electrode plate has been bonded to a substrate made of aluminum nitride ceramic or the like, and the electrode plate further has an adsorption surface on which an aluminum nitride film is applied. A substrate holding device configured to apply a high-frequency voltage and / or a DC high voltage for electrostatic attraction is known.

Further, as another substrate holding device, a plate-like plasma electrode formed of a high melting point metal such as molybdenum is held by two upper and lower aluminum nitride ceramics, and the aluminum nitride ceramics have insulating properties. What was joined by the vitreous joining agent is known.

[Problem] Among the substrate holding devices of the prior art, in a substrate holding device of a type in which an aluminum nitride film is applied to a metal electrode plate, the aluminum nitride film is formed by vapor deposition such as CVD. Since the film is formed by the phase growth method, the adhesion of the film is not always sufficient, and when the film thickness is increased, the film is easily peeled off. Therefore, the film thickness was limited to about 10 μm. If the film thickness is less than 10 μm, the portion of the aluminum nitride film exposed to the plasma will be thinned by being hit by radical molecules and atoms, and the volume resistivity will decrease, making it difficult to generate plasma uniformly. However, there is a problem that durability is poor.

Further, in a substrate holding device of a type in which aluminum nitride ceramics are joined with a heat-resistant glassy bonding agent, the substrate is repeatedly exposed to heat of increasing / decreasing temperature or exposed to a high-temperature atmosphere for a long time. There is a problem that cracks easily occur in the joints due to large variations in bonding strength, and the metal electrode for plasma generation is exposed to plasma, causing heavy metal contamination from the metal material for electrodes.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and it is an object of the present invention to provide a semiconductor device which has excellent plasma stability and is capable of repeatedly heating and cooling. It is an object of the present invention to provide a substrate holding device that does not crack at a joint portion even when exposed to a load or a high-temperature atmosphere for a long time, does not expose a metal electrode plate to plasma, and thus does not cause heavy metal contamination.

[0008]

Means for Solving the Problems As a concretely constructed means capable of effectively solving the above-mentioned problems, claim 1 of the present invention is provided.
The substrate holding device according to the present invention includes a ceramic sintered body base, and a ceramic sintered body covering plate that covers the entire area of the bonding surface of the substrate, and is held between the substrate and the covering plate. A metal electrode plate, and a substrate holding device provided with an application electrode having one end connected to the electrode plate, wherein the base and the cover plate are hermetically bonded by a bonding agent, and Is characterized in that an oxynitride glass layer containing at least two elements selected from Group IIIa elements of the periodic table, aluminum and silicon is formed.

Further, the substrate holding device according to claim 2 is characterized in that the electrode plate functions as a plasma generating electrode by applying a high frequency voltage and / or as an electrostatic attraction electrode by applying a DC voltage. Features.

In a third aspect of the present invention, the ceramic sintered body is made of an aluminum nitride sintered body or an aluminum nitride based sintered body, and the electrode plate is made of molybdenum, tungsten, tantalum, niobium or any of these. Characterized by a high melting point metal such as an alloy.

[0011]

Embodiments of the present invention will be described below in detail. However, this embodiment is specifically described for better understanding of the gist of the invention, and does not limit the content of the invention unless otherwise specified.

In this embodiment, as shown in FIGS. 1 and 2, a substrate holding device 1 has a base 2 made of a ceramic sintered body having a concave groove 11 formed on an upper surface, and a substrate 2 loaded in the concave groove. Metal electrode plate 4, the base 2 and the electrode plate 4
And a cover plate 3 made of ceramic sintered body on which a substrate (not shown) is placed, and one end connected to the electrode plate 4 for forming a plasma formed of molybdenum having excellent heat resistance. And a thermocouple 6 for measuring the temperature of the covering plate 3.

The base 2 and the cover plate 3 are hermetically bonded by a bonding agent.
An oxynitride glass layer containing at least two elements selected from Group IIIa elements, aluminum, and silicon is formed, and the thickness of the bonding layer 7 after bonding is 5 to 180 μm.

In the substrate holding apparatus 1 according to this embodiment, the heater element 8 is provided inside the base 2.
May be provided. That is, the base 2 has a base plate 2a made of a ceramic sintered body having a concave groove 12 formed on the upper surface, a heater element 8 loaded in the concave groove 12, the base lower plate 2a and the heater element. Substrate upper plate 2b made of a ceramic sintered body covering the entire region of No. 8
And one end connected to the heater element 8, and at least one pair of heater power supply electrodes 9 formed of molybdenum having excellent heat resistance.

The lower base plate 2a and the upper base plate 2b are hermetically bonded by a bonding agent, and the bonding interface has at least two elements selected from Group IIIa elements of the periodic table.
An oxynitride glass layer containing seed elements, aluminum and silicon is formed, and the thickness of the bonding layer 10 after bonding is 5 to 180 μm.

Hereinafter, each component constituting the present invention will be described in detail. [Electrode Plate] By applying a high-frequency voltage from the plasma generation power supply to the electrode plate 4 via the application electrode 5, plasma can be generated. At this time, the electrode plate 4
Is a metal plate having a sufficient thickness T ₁ of 0.025 mm or more, so that even if the high-frequency voltage is applied, there is no risk of burning due to heat generation, and unlike the case of using a grid or mesh electrode. In addition, dense, stable, and uniform plasma can be generated in the entire region, and further, there is an advantage that the connection between the electrode plate 4 and the application electrode 5 can be reliably performed between the surface and the rod.

When a high DC voltage of about 500 V is applied to the electrode plate 4 from the power supply for electrostatic attraction via the electrode 5 for application, the cover plate 3 functions as an insulator, and an object to be attracted such as a silicon substrate is applied. Can be electrostatically attracted. In addition,
When applying both the high-frequency voltage of the power supply for plasma generation and the DC high voltage of the power supply for electrostatic attraction to the electrode plate 4, a filter capable of cutting high frequency can be provided between the power supply for electrostatic attraction and the power supply electrode. Good.

Further, the electrode plate 4 has a coefficient of thermal expansion close to the coefficient of thermal expansion of the ceramics, is stable to the heat treatment temperature and atmosphere during the bonding process, has a low specific resistance, and has a room temperature to 1000 ° C. It is preferable to use a high melting point metal such as molybdenum, tungsten, tantalum, niobium, or an alloy thereof because, for example, long-term use in a practical temperature range of up to ° C. is possible.

[Ceramic Sintered Body] Substrate lower plate 2
a, the material of the substrate upper plate 2b and the coating plate 3 are particularly limited
Although not specified, thermal conductivity, mechanical strength,
Excellent plasma properties, CF_Four, C _TwoF₆, C_TwoF₈Such as plastic
Reasons such as excellent durability against Zuma cleaning gas
From aluminum nitride sintered body or aluminum nitride
It is preferably formed of a rubber-based sintered body. this
Aluminum nitride sintered body or aluminum nitride based sintered
The body can be manufactured by a known method.
You.

[Glass bonding agent] The distance between the substrate 2 and the cover plate 3 sandwiching the electrode 4 and the distance between the substrate lower plate 2a and the substrate upper plate 2b sandwiching the heater element 8 are set. As the bonding layer for airtight bonding,
The reason why the oxynitride glass layer containing at least two elements selected from the group IIIa elements, aluminum and silicon is used is as follows. , 10 can be greatly improved, and this airtightness can be ensured for a long period of time.

That is, the oxynitride glass having the above components has good wettability with the ceramic sintered body, excellent bonding strength, good airtightness of the bonding portions 7 and 10, and small variation in bonding strength. Excellent heat resistance.

The thermal expansion coefficient of the oxynitride glass containing the above components is 3 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / ° C., for example, aluminum nitride sintering which is preferably used in a ceramic sintered body Body thermal expansion coefficient (3.8 × 10 ^-6 to 4.7 × 10
⁻⁶ / ° C.), thereby preventing damage to the bonding layers 7 and 10, that is, generation of cracks due to thermal stress during repeated heat-up and temperature-down thermal loads. 10 airtightness can be ensured for a long time. Further, the glass softening point Tg of the oxynitride glass layer containing the above components is as high as 850 to 950 ° C., and the bonding layers 7 and 10 are not deteriorated even when exposed to a high temperature atmosphere for a long time.

The bonding agent capable of forming the oxynitride glass layer is manufactured as follows. First, as a bonding material powder, for example, an oxide of at least two elements selected from Group IIIa elements of the periodic table, silicon dioxide, and aluminum oxide are mixed, or a compound that changes to these by heat treatment is used. Mix.

Here, the oxide of an element of Group IIIa of the periodic table is not particularly limited, and Y ₂ O ₃ , Dy ₂ O ₃ , Er ₂ O
_{3, Gd 2 O 3, La} 2 O 3, Yb 2 O 3, Sm 2 O 3
And the like. Among these, Y ₂ O ₃ is most suitable as one of the oxides of the Group IIIa element of the periodic table from the viewpoints of price and availability, and other oxides of the periodic table III
oxides of a group element is preferably the Y ₂ O ₃ and likely to form a complete solid solution _{Dy 2 O 3, Er 2 O} 3, Yb 2 O 3, from particular Dy ₂ O ₃ is the price point It is suitable.

The composition ratio of each of the above components is not particularly limited either, but oxides of at least two elements selected from Group IIIa elements of the periodic table are 20 to 50% by weight in total and silicon dioxide is 30 to 30% by weight. 70% by weight, aluminum oxide 10 ~
It is preferable to mix such that a melt containing 30% by weight is formed because the obtained melt has a low melting point and excellent wettability with ceramic members and the like. Further, when there are two kinds of Group IIIa elements in the periodic table, the oxides of the Group IIIa elements in the periodic table are blended in a molar ratio of about 1: 1 because the melting point of the bonding material becomes the lowest. It is suitable.

Then, the above-mentioned raw material mixed powder is pulverized to, for example, a particle size of 5 μm or less, melted at 1500 to 1700 ° C., and quenched to obtain a vitreous cooled product. A binder of a fine powder of a melt having a uniform composition is prepared. The atmosphere at the time of preparing this bonding material is not particularly limited, but when performed in a nitrogen atmosphere, an oxynitride glass is formed, and when performed in a non-nitrogen atmosphere, an oxide glass is formed. However, in the present invention, since it is essential that an oxynitride glass layer is formed at the bonding interface, the preparation of the bonding material is performed in a nitrogen-containing atmosphere, and the bonding agent is preliminarily oxynitride vitrified. It is preferable to keep it. The nitrogen-containing atmosphere can be obtained by using N ₂ gas, H ₂ -N ₂ mixed gas, NH ₃ gas, or the like.

It is preferable that Si ₃ N ₄ powder and / or AIN powder be blended in the bonding material in an amount of 1 to 50% by weight. That is, the addition of Si ₃ N ₄ powder or AIN powder reduces the coefficient of thermal expansion of the oxynitride glass and also improves the heat resistance. If the blending ratio is less than 1% by weight, there is no point in adding it, and if it exceeds 50% by weight, the joining strength is lowered, which is not preferable. The particle size of the Si ₃ N ₄ powder and / or AIN powder to be added is not particularly limited,
It is preferable that the average diameter of the oxynitride glass is 0.8 μm or less in that oxynitride glass having a uniform concentration can be formed.

[Thickness of Bonding Layer] The thickness of the bonding layer 7 after bonding the base 2 and the cover plate 3 is 5 to 180 μm, and the bonding after bonding the base lower plate 2a and the base upper plate 2b. The reason why the thickness of the layer 10 is preferably set to 5 to 180 μm is as follows, and the airtightness of the joint can be more firmly secured.

That is, when the thickness of the bonding layer 7 is less than 5 μm,
Due to insufficient formation of fillets at the ends of the bonding layer 7, the airtightness of the bonding portion 7 cannot be ensured, and the bonding strength is also insufficient. On the other hand, when the thickness of the bonding layer 7 is more than 180 μm, although the airtightness of the bonding layer 7 can be ensured, the bonding strength tends to decrease, and the vitreous bonding agent melted by the heat treatment at the time of bonding becomes less likely. After flowing out from the end portion, the base 2 and the cover plate 3 cannot be joined in parallel, which may lower the product yield and hinder the joining operation.

If the thickness of the bonding layer 10 is less than 5 μm, the formation of fillets at the ends of the bonding layer 10 is insufficient, so that the airtightness of the bonding portion 10 cannot be secured.
Also, the bonding strength is insufficient. On the other hand, when the thickness of the bonding layer 10 is 1
If it exceeds 80 μm, although the airtightness of the bonding layer 10 can be ensured, the bonding strength is liable to decrease, and the vitreous bonding agent melted by the heat treatment at the time of the bonding flows out from the end of the bonding layer 10 and the lower part of the substrate The board 2a and the base body upper board 2b cannot be joined in parallel, which may lower the product yield and hinder the joining operation.

[Heater Element] The material of the heater element 8 is not particularly limited, but is sintered without adding an additive and has a sintered density of 2.8 g / cm ³ or more for the reasons described below. , Electrical resistivity at room temperature
It is preferable to be made of a silicon carbide sintered body of 0.1 Ωcm or less. By energizing the heater element 8, the cover plate 3 can be maintained at a predetermined temperature.

The heater element 8 made of such a silicon carbide ceramic sintered body is disclosed in, for example, Japanese Patent Application Laid-Open No. 4-65361.
Can be produced by any one of the following methods described in Japanese Patent Application Laid-Open No. H10-260,000. A first silicon carbide powder having an average particle diameter of 0.1 to 10 μm and a source gas comprising a silane compound or a silicon halide and a hydrocarbon are introduced into plasma in a non-oxidizing atmosphere, and the pressure of the reaction system is reduced to 1 atm. A second silicon carbide powder having an average particle size of 0.1 μm or less synthesized by performing a gas phase reaction while controlling in a range of less than 0.1 torr is mixed with the second silicon carbide powder, and heated and sintered to form a silicon carbide sintered body. A sintered body is obtained, and this sintered body is subjected to electric discharge machining according to a desired pattern to form a heater element.

A source gas comprising a silane compound or a silicon halide and a hydrocarbon is introduced into plasma in a non-oxidizing atmosphere, and the pressure of the reaction system is reduced from less than 1 atm to 0.1 torr.
Heating and sintering silicon carbide powder having an average particle diameter of 0.1 μm or less synthesized by performing a gas phase reaction while controlling in the range of r to obtain a silicon carbide sintered body,
This sintered body is subjected to electric discharge machining according to a desired pattern to form a heater element.

However, since these heater elements 8 are formed of a silicon carbide sintered body without additives, that is, without adding any foreign substance,
Homogeneous, as a result, there is no local abnormal heat generation, a part of the bonding layer 10 is not melted, and no leak is generated at the bonding portion, and the airtightness of the bonding layer 10 can be further secured. It is.

Further, since no additive is added, the sintered body is extremely high in purity and has a sintered density of 2.8 g / cm ³ , so that leakage occurs at the joint. Even if airtightness is impaired, the heater element 10
There is no evaporation of the additive, that is, the impurities, and there is no possibility that the inside of the reaction chamber is contaminated. Furthermore, since the heater element 8 is excellent in high temperature and high strength, there is no deformation or disconnection of the heater element 8 due to thermal shock, and since the electric resistivity at room temperature is as low as 1 Ω · cm or less, the heater element 8 is thinned. Since there is no need to reduce the film thickness, there is no fear that the heater element 8 will be disconnected.

The substrate holding device according to this embodiment can be manufactured, for example, as follows.
Substrate lower plate 2b, substrate upper plate 2a having concave grooves on the surface
Is formed by pressing a mold having a convex portion formed on the surface thereof against a ceramic molded plate and sintering it. Sintering conditions such as the sintering temperature may be in accordance with conventional methods. The cover plate 3 is also formed according to a conventional method.

Then, the electrode plate 4 is loaded into the concave groove 10 of the base upper plate 2b, and the heater element 8 formed according to the above method is loaded into the concave groove 11 of the base lower plate 2a.

Then, the finely ground vitreous bonding agent is mixed with screen oil to form a paste, and the paste-like vitreous bonding agent is mixed with the base lower plate in which the recess 11 is loaded with the heater element 8. 2a and the upper surface of the base plate 2b, and the bonding surface of the upper substrate 2b and the cover plate 3 in which the electrode plate 4 is loaded in the concave groove 10; Dry with.

Thereafter, the base lower plate 2a and the base upper plate 2b are interposed via the surface coated with the vitreous bonding agent.
And the covering plate 3 are laminated with the heater element 8 and the electrode plate 4 sandwiched therebetween, and heated in an electric furnace to melt the vitreous bonding agent.
Heat for 5 to 40 minutes to join.

The heating is carried out at a constant pressure or under a pressure of about 10 atm or less. The atmosphere at the time of heating differs depending on the bonding agent used. That is, when a bonding agent containing oxynitride glass is used, since the bonding agent is oxynitrided in advance, a non-nitrogen-containing atmosphere may be used, but a nitrogen-containing atmosphere is preferable. On the other hand, when a bonding agent containing oxide glass is used, a nitrogen source for converting the oxide glass into oxynitride is required, and the bonding is performed in a nitrogen-containing atmosphere. Note that the nitrogen-containing atmosphere can be obtained by using N ₂ gas, H ₂ —N ₂ mixed gas, NH ₃ gas, or the like.

The heated and melted bonding agent can have a bonding strength by being solidified by cooling. However, by cooling slowly without performing rapid cooling, the oxynitride glass can be maintained while maintaining a high nitrogen intake. It is preferable to stabilize the layer. The cooling rate is preferably 50 ° C / min or less, more preferably 30 ° C / min or less.

In order to make the thicknesses of the bonding layers 7 and 10 after bonding within the above ranges, respectively, the ratio of the amount of the finely ground vitreous bonding agent to the screen oil, the amount of the paste-like vitreous bonding agent applied, It can be carried out by appropriately adjusting the processing conditions such as the heating temperature and the time for bonding.

[0043]

EXAMPLES Examples will be described below in detail. [Examples 1 to 5] Diameter of a surface having a spiral groove for mounting a heater element having a width of 5 mm and a depth of 3 mm
220 m diameter, 15 m thick aluminum nitride sintered body base plate, and a 220 m diameter disc-shaped groove for loading a metal electrode plate with a diameter of 200 mm and a depth of 0.3 mm
An upper plate made of an aluminum nitride sintered body having a thickness of 8 mm and a thickness of 8 mm, and a coated plate made of an aluminum nitride sintered body having a diameter of 220 mm and a thickness of 1 mm were formed by a conventional method.

On the other hand, sintering is performed without adding a sintering aid or an additive for imparting conductivity, and the sintering density is reduced to 3.1.
The heater element made of a silicon carbide sintered body having a g / cm ³ and an electrical resistivity at room temperature of 0.05 Ω · cm and capable of being loaded in the spiral groove is referred to as the paragraph number [003].
3]. The average particle size of the first silicon carbide powder used in this production method is 0.7 μm, the amount added is 95% by weight, and the average particle size of the second silicon carbide powder is 0.01%.
μm, the amount added is 5% by weight, and the hot press sintering conditions are a press pressure of 400 kg / cm ² , a sintering temperature of 2200 ° C., and a sintering time of 90 minutes. In addition, 200m in diameter as an electrode plate
A molybdenum metal plate having a thickness of 0.3 mm was prepared.

Next, a vitreous bonding agent having a composition shown in Table 1 (particle diameter: about 2 μm) was mixed with a commercially available screen oil to form a paste, and the paste-like vitreous bonding agent was inserted into the spiral groove. Coating is applied to the respective joint surfaces of the base lower plate and the base upper plate loaded with the heater element, and to the respective joint surfaces of the base upper plate and the cover plate loaded with the electrode plate in the disc-shaped groove. And dried at 100-200 ° C.

Thereafter, the lower base plate, the upper base plate, and the cover plate are sandwiched between the heater element and the electrode plate via the surface coated with the vitreous bonding agent. The layers were laminated and heated in an electric furnace in an N ₂ gas atmosphere to melt the vitreous bonding agent, and then heated at 1400 ° C. for 20 minutes for airtight bonding. The cooling rate is 25 ° C / min,
The thickness of the bonding layer after bonding was 50 μm. Also,
It was confirmed by Auger electron spectroscopy that oxynitride glass was formed at the bonding interface.

The substrate holding device thus obtained is
A durability test was performed to confirm the airtightness of the joint between the base upper plate and the cover plate. Table 1 shows the test results. The outline of the durability test is as follows.

The ceramic heater is energized, the temperature is raised from room temperature to a maximum temperature of 700 ° C. in one hour, maintained at the maximum temperature for 30 minutes, and then gradually cooled to room temperature. The airtightness of the joint after 100 heat cycles was tested by a leak test using He gas. In addition, the evaluation criteria of airtightness are as follows. ；: He leak amount is 10 ^-9 torr · l / sec or less △; He leak amount is 10 ^-9 to 10 ^-8 torr · l / sec ×; He leak amount is 10 ^-8 torr · l / sec or more

[0049]

[Table 1]

[Comparative Examples 1 to 6] A substrate holding device was manufactured according to Examples 1 to 5, and subjected to a durability test. However, the composition of the vitreous bonding agent is as shown in Table 2.

[0051]

[Table 2]

Example 6 "Plasma Durability Test" The substrate holding apparatus of Example 1 was set in a vacuum chamber, plasma was generated in an atmosphere of CF ₄ + H ₂ (5 torr), and the durability test was performed. As a result, it was confirmed that the plasma was stable even after a lapse of 500 hours and had excellent durability.

Comparative Example 7 The same lower substrate, upper substrate, electrode plate and heater element as in Examples 1 to 5 were prepared. The heater element is loaded in the concave groove of the base lower plate, and the electrode plate is placed on the base upper plate, and these are made of Ag (72% by weight) -Cu (25% by weight) -Ti (3% by weight). %), 10 ^-5 to
Bonding was performed at 870 ° C. for 20 minutes in a vacuum of rr. Thereafter, a 10 μm-thick aluminum nitride thin film was formed on the electrode plate by a CVD method to prepare a substrate holding device. When the durability of the substrate holding apparatus was tested according to Example 6, the plasma became unstable after 120 hours, and the generation of plasma stopped after 165 hours. This is presumably because the volume resistivity of the aluminum nitride thin film was reduced. Further, when the airtightness of this substrate holding device was tested in accordance with Examples 1 to 5, the He leak amount was 10 ⁻⁵ torr · l / sec, and it was confirmed that the airtightness of the joint was inferior.

[0054]

As described above, in the substrate holding apparatus according to the first aspect of the present invention, the ceramic sintered body base and the ceramic sintered body covering plate covering the entire area of the bonding surface of the base are provided. A substrate holding device comprising: a metal electrode plate gripped between the base and the cover plate; and an application electrode having one end connected to the electrode plate. It is airtightly bonded to the cover plate with a bonding agent,
An oxynitride glass layer containing at least two elements selected from Group IIIa elements of the periodic table, aluminum, and silicon is formed at the bonding interface, so that the plasma stability is excellent and the repetition rate is high. Even when exposed to a thermal load of temperature rise / fall or a high temperature atmosphere for a long time, cracks do not occur in the joints, the electrode plate is not exposed to plasma, and heavy metal contamination can be prevented.

Further, in the substrate holding device according to the second aspect,
The electrode plate functions as a plasma generating electrode by applying a high-frequency voltage, and / or functions as an electrostatic attraction electrode by applying a DC voltage, so that it does not burn out even when a high-frequency voltage is applied. Excellent board durability,
Dense, stable, and uniform plasma can be generated in the entire region, and the connection between the electrode plate and the application electrode can be reliably performed between the surface and the rod.

In the substrate holding device according to the third aspect,
The ceramic sintered body is made of an aluminum nitride sintered body or an aluminum nitride-based sintered body, and the electrode plate is made of a high melting point metal such as molybdenum, tungsten, tantalum, niobium, or an alloy thereof. , And the occurrence of local abnormal heat generation can be prevented, and the durability can be improved.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a substrate holding device according to an embodiment of the present invention.

FIG. 2 is an exploded longitudinal sectional view showing the substrate holding device according to the embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate holding device 2 Substrate made of ceramics sintered body 2a Coated lower plate 2b Coated upper plate 3 Coated plate made of ceramics sintered body 4 Metal electrode plate 5 Electrode for applying high frequency / DC voltage 6 Thermocouple 7 Joining layer 8 Heater element 9 Heater power supply electrode 10 Bonding layer 11, 12 Groove

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Takeshi Watanabe 585 Tomicho, Funabashi-shi, Chiba Sumitomo Osaka Cement Co., Ltd. (72) Inventor Yoshihiko Murakami 585 Tomicho, Funabashi-shi, Chiba Sumitomo Osaka Cement Co., Ltd. (72) Inventor Masayuki Hashimoto 585, Tomihara-cho, Funabashi-shi, Chiba (72) Inventor Yukio Ikuhara 585 Tomimachi, Funabashi City, Chiba Prefecture Sumitomo Osaka Cement Co., Ltd. New Material Division F-term (reference) 4G026 BA16 BB16 BF02 BF43 BF46 BG02 BG27 BH13 5F031 HA02 HA16 MA28 5F045 BB14 EH04 EH08 EK09 EM02 EM05 EM09

Claims (3)

[Claims] 1. A base made of a ceramic sintered body, and a cover plate made of a ceramic sintered body that covers an entire region of a bonding surface of the base, and a metal gripped between the base and the cover plate. And an application electrode having one end connected to the electrode plate, wherein the base and the cover plate are hermetically bonded by a bonding agent, and the bonding interface has a periodic structure. A substrate holding device comprising an oxynitride glass layer containing at least two elements selected from the elements of Group IIIa, aluminum, and silicon. 2. The substrate according to claim 1, wherein the electrode plate functions as a plasma generating electrode by applying a high frequency voltage and / or as an electrostatic attraction electrode by applying a DC voltage. Holding device. 3. The ceramic sintered body is made of an aluminum nitride sintered body or an aluminum nitride based sintered body,
The substrate holding device according to claim 1, wherein the electrode plate is made of a high melting point metal such as molybdenum, tungsten, tantalum, niobium, or an alloy thereof.