JP2000264676A - Low melting point glass - Google Patents
Low melting point glassInfo
- Publication number
- JP2000264676A JP2000264676A JP6690299A JP6690299A JP2000264676A JP 2000264676 A JP2000264676 A JP 2000264676A JP 6690299 A JP6690299 A JP 6690299A JP 6690299 A JP6690299 A JP 6690299A JP 2000264676 A JP2000264676 A JP 2000264676A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- low melting
- melting point
- point glass
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電子部品の封着、
被覆、等に用いられる低融点ガラスに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to sealing of electronic parts,
The present invention relates to a low-melting glass used for coating and the like.
【0002】[0002]
【従来の技術】低融点ガラスは、電子部品の封着、被
覆、等に広く用いられている。たとえば、ブラウン管に
おけるパネルとファンネルの封着、プラズマディスプレ
イパネル(PDP)、蛍光表示管(VFD)、等のフラ
ットディスプレイパネルにおける封着、被覆、リブ形
成、等に用いられている。2. Description of the Related Art Low melting glass is widely used for sealing and coating electronic parts. For example, it is used for sealing a panel and a funnel in a cathode ray tube, sealing, coating, and forming ribs in a flat display panel such as a plasma display panel (PDP) and a fluorescent display tube (VFD).
【0003】近年、このような低融点ガラスとして鉛や
カドミウムを含まないものが求められている。そのよう
なものとしてZnO−B2O3−TeO2系低融点ガラス
が知られている。たとえば特開平7−330372に
は、鉛やカドミウムを含まず、フッ素を必須成分とする
ZnO−B2O3−TeO2系低融点ガラスが開示されて
いる。In recent years, there has been a demand for such a low-melting glass that does not contain lead or cadmium. ZnO-B 2 O 3 -TeO 2 based low melting glass is known as such. For example, JP-A-7-330372, does not contain lead or cadmium, ZnO-B 2 O 3 -TeO 2 based low melting glass and fluorine as essential components is disclosed.
【0004】[0004]
【発明が解決しようとする課題】しかし、フッ素を含有
する低融点ガラスをブラウン管におけるパネルとファン
ネルの封着に適用すると、エミッションスランプと呼ば
れる現象が発生してブラウン管の輝度が低下するおそれ
がある。すなわち、ブラウン管の製造工程においてはパ
ネルとファンネルは低融点ガラスにより封着後、内部を
真空にして加熱(ベークアウト)されるが、この際前記
低融点ガラスからフッ素ガスが発生するおそれがある。
その結果、ブラウン管内部に取り付けられている電子銃
がこのフッ素ガスにより劣化しブラウン管の輝度が低下
するおそれがある。However, when a fluorine-containing low-melting glass is applied to sealing a panel and a funnel in a cathode ray tube, a phenomenon called an emission slump may occur and the brightness of the cathode ray tube may be reduced. That is, in the cathode ray tube manufacturing process, the panel and the funnel are heated (baked out) by sealing the inside with a low melting point glass and then evacuating the inside thereof. At this time, fluorine gas may be generated from the low melting point glass.
As a result, the electron gun mounted inside the cathode ray tube may be deteriorated by the fluorine gas, and the brightness of the cathode ray tube may be reduced.
【0005】PDP、VFD、等においても同様にベー
クアウトは行われ、フッ素を含有する低融点ガラスから
はその際フッ素ガスが発生し種々のトラブルが起るおそ
れがある。本発明は、電子部品の封着、被覆、等に用い
られ、鉛やカドミウムを含まず、かつフッ素を含有しな
い低融点ガラスの提供を目的とする。[0005] Baking out is similarly performed in PDPs, VFDs, and the like, and fluorine gas is generated from low-melting glass containing fluorine, which may cause various troubles. An object of the present invention is to provide a low-melting glass that is used for sealing, coating, and the like of electronic components, does not contain lead or cadmium, and does not contain fluorine.
【0006】[0006]
【課題を解決するための手段】本発明は、実質的に下記
酸化物基準のモル%で、ZnO 41〜70%、B
2O3 27〜49%、TeO2 1〜25%、
からなる低融点ガラスを提供する。According to the present invention, there is provided a method for producing ZnO, comprising:
2 O 3 27-49%, TeO 2 1-25%,
A low-melting glass comprising:
【0007】[0007]
【発明の実施の形態】本発明の低融点ガラスは通常、粉
末にして、電子部品(ガラス基板、等)の封着、被覆、
等に用いられる。本発明の低融点ガラスの粉末は、ビー
クルと混合してペースト化され、ガラスペーストとされ
る。ビークルとの混合は、乳鉢、3本ロールミル、等を
用いて行われる。このガラスペーストにより封着、被
覆、等を行う対象物(以下単に対象物という。)、たと
えばガラス基板の所定部分に塗布し、焼成する。エチル
セルロース、ニトロセルロース、ブチラール樹脂、等の
樹脂成分を、α−テルピネオール、ブチルカルビトール
アセテート、酢酸イソアミル、等の溶剤に溶解したもの
が前記ビークルとして用いられる。BEST MODE FOR CARRYING OUT THE INVENTION The low-melting glass of the present invention is usually powdered to seal and coat electronic parts (glass substrates, etc.).
Used for etc. The powder of the low-melting glass of the present invention is mixed with a vehicle and made into a paste to form a glass paste. Mixing with the vehicle is performed using a mortar, a three-roll mill, or the like. The glass paste is applied to an object to be sealed, covered, and the like (hereinafter simply referred to as an object), for example, a predetermined portion of a glass substrate, and fired. A solution obtained by dissolving resin components such as ethyl cellulose, nitrocellulose and butyral resin in a solvent such as α-terpineol, butyl carbitol acetate, isoamyl acetate and the like is used as the vehicle.
【0008】本発明の低融点ガラスの軟化点は630℃
以下であることが好ましい。630℃超では、電子部品
の封着、被覆、等において通常行われる焼成、すなわち
焼成温度が650℃以下の焼成では低融点ガラスが充分
軟化流動しないおそれがある。より好ましくは620℃
以下、特に好ましくは600℃以下である。また、本発
明の低融点ガラスの軟化点は好ましくは500℃以上で
ある。500℃未満では、焼成時に対象物と反応するお
それがある。より好ましくは530℃以上、特に好まし
くは560℃以上である。The softening point of the low melting point glass of the present invention is 630 ° C.
The following is preferred. If the temperature exceeds 630 ° C., there is a possibility that the low-melting glass may not be sufficiently softened and flown in firing usually performed in sealing and coating of electronic components, that is, firing at a firing temperature of 650 ° C. or lower. More preferably 620 ° C
The temperature is particularly preferably at most 600 ° C. The softening point of the low melting point glass of the present invention is preferably 500 ° C. or higher. If it is lower than 500 ° C., there is a possibility that it reacts with the object during firing. It is more preferably at least 530 ° C, particularly preferably at least 560 ° C.
【0009】本発明の低融点ガラスのガラス転移点は、
好ましくは450℃以上である。450℃未満では軟化
点が低くなりすぎるおそれがある。より好ましくは46
0℃以上である。本発明の低融点ガラスは、その焼成時
に結晶化するものであってもよいし、結晶化しないもの
であってもよい。The glass transition point of the low melting glass of the present invention is as follows:
Preferably it is 450 ° C. or higher. If it is lower than 450 ° C., the softening point may be too low. More preferably 46
0 ° C. or higher. The low-melting glass of the present invention may be one that crystallizes during firing or one that does not crystallize.
【0010】対象物の50〜250℃における平均線膨
張係数は60×10-7〜100×10-7/℃の範囲にあ
ることが多い(50〜250℃における平均線膨張係数
を、以下単に膨張係数という。)。これら対象物と本発
明の低融点ガラスとの膨張マッチングの観点から、本発
明の低融点ガラスの膨張係数は50×10-7〜90×1
0-7/℃であることが好ましい。膨張係数の下限につい
ては、より好ましくは54×10-7/℃である。また、
その上限については、より好ましくは85×10-7/
℃、さらに好ましくは80×10-7/℃、特に好ましく
は65×10-7/℃である。The average linear expansion coefficient of an object at 50 to 250 ° C. is often in the range of 60 × 10 −7 to 100 × 10 −7 / ° C. (The average linear expansion coefficient at 50 to 250 ° C. is simply referred to as Expansion coefficient). From the viewpoint of expansion matching between these objects and the low-melting glass of the present invention, the low-melting glass of the present invention has an expansion coefficient of 50 × 10 −7 to 90 × 1.
It is preferably 0 -7 / ° C. The lower limit of the expansion coefficient is more preferably 54 × 10 −7 / ° C. Also,
The upper limit is more preferably 85 × 10 −7 /
° C, more preferably 80 × 10 -7 / ° C, and particularly preferably 65 × 10 -7 / ° C.
【0011】本発明の低融点ガラスの粉末にフィラーを
加えることにより、電子部品の封着、被覆、等に使用で
きるガラスセラミックス組成物が得られる。フィラーと
して適切なものを選択し、またその添加量を調整するこ
とにより、このガラスセラミックス組成物を焼成して得
られる焼成体の膨張係数を制御できる。前記焼成体の膨
張係数を60×10-7〜90×10-7/℃に制御するた
めに用いられるフィラーとしては、ジルコン、コーディ
エライト、アルミナ、チタン酸アルミニウム、ムライ
ト、シリカ、β−ユークリプタイト、β−スポジュメ
ン、β−石英固溶体、等が挙げられる。By adding a filler to the low-melting glass powder of the present invention, a glass-ceramic composition that can be used for sealing, coating, etc. of electronic parts can be obtained. By selecting an appropriate filler and adjusting the amount thereof, the expansion coefficient of a fired body obtained by firing the glass ceramic composition can be controlled. As fillers used to control the expansion coefficient of the fired body to 60 × 10 −7 to 90 × 10 −7 / ° C., zircon, cordierite, alumina, aluminum titanate, mullite, silica, β-U Cryptite, β-spodumene, β-quartz solid solution, and the like.
【0012】本発明の低融点ガラスの粉末または前記ガ
ラスセラミックス組成物に、色調調整のために耐熱性顔
料を加えてもよい。耐熱性顔料としては、アルミナ、酸
化チタン、ジルコニア、等の白色顔料、鉄とマンガンの
複合酸化物、銅とクロムの複合酸化物、コバルトとクロ
ムの複合酸化物、等の黒色顔料が例示される。A heat-resistant pigment may be added to the low-melting glass powder or the glass-ceramic composition of the present invention for adjusting the color tone. Examples of the heat-resistant pigment include white pigments such as alumina, titanium oxide, and zirconia; black oxides such as a composite oxide of iron and manganese; a composite oxide of copper and chromium; and a composite oxide of cobalt and chromium. .
【0013】本発明の低融点ガラスは実質的に下記酸化
物基準のモル%で、ZnO:41〜70%、B2O3:2
7〜49%、TeO2:3〜25%、からなることが好
ましい。より好ましくは、ZnO:44〜68%、B2
O3:28〜44%、TeO2:3〜17%、である。特
に好ましくは、ZnO:45〜65%、B2O3:28〜
40%、TeO2:3〜16%、である。The low-melting glass of the present invention is substantially in the following mol% based on oxides: ZnO: 41 to 70%, B 2 O 3 : 2
7~49%, TeO 2: 3~25% , preferably made of. More preferably, ZnO: 44-68%, B 2
O 3: 28~44%, TeO 2 : 3~17%, it is. Particularly preferably, ZnO: 45~65%, B 2 O 3: 28~
40%, TeO 2: 3~16% , it is.
【0014】本発明の低融点ガラスの組成について、モ
ル%を単に%と表示して以下に説明する。ZnOはガラ
スを安定化させる成分である。41%未満では失透しや
すくなりガラス化が困難となる。好ましくは44%以
上、より好ましくは45%以上である。70%超では耐
水性が低下し、電子部品の封着、被覆、等への適用が困
難となる。好ましくは68%以下、より好ましくは65
%以下である。The composition of the low melting point glass of the present invention will be described below by simply expressing mol% as%. ZnO is a component that stabilizes glass. If it is less than 41%, devitrification tends to occur, and vitrification becomes difficult. It is preferably at least 44%, more preferably at least 45%. If it exceeds 70%, the water resistance decreases, and application to sealing, coating, etc. of electronic components becomes difficult. Preferably 68% or less, more preferably 65%
% Or less.
【0015】B2O3はネットワークフォーマーである。
27%未満ではガラス形成が困難となる。好ましくは2
8%以上である。49%超では耐水性が低下し、電子部
品の封着、被覆、等への適用が困難となる。好ましくは
44%以下、より好ましくは40%以下である。B 2 O 3 is a network former.
If it is less than 27%, glass formation becomes difficult. Preferably 2
8% or more. If it exceeds 49%, the water resistance is reduced, and it is difficult to apply it to sealing, coating, etc. of electronic components. It is preferably at most 44%, more preferably at most 40%.
【0016】TeO2は軟化点を低下させる成分であ
る。1%未満では前記効果が小さい。好ましくは3%以
上、より好ましくは5%以上、特に好ましくは8%以上
である。25%超で耐水性が低下し、電子部品の封着、
被覆、等への適用が困難となる。好ましくは17%以
下、より好ましくは16%以下である。TeO 2 is a component that lowers the softening point. If it is less than 1%, the effect is small. It is preferably at least 3%, more preferably at least 5%, particularly preferably at least 8%. If it exceeds 25%, the water resistance decreases, and the sealing of electronic parts,
It becomes difficult to apply to coating, etc. It is preferably at most 17%, more preferably at most 16%.
【0017】本発明の低融点ガラスは実質的に上記成分
からなるが、この他にP2O5、SiO2、Al2O3、M
gO、CaO、SrO、BaO、Y2O3、TiO2、Z
rO2、MoO3、WO3、MnO、Fe2O3、Rh
2O3、CoO、NiO、PdO、CuO、Ag2O、B
i2O3、希土類酸化物(La2O3、CeO2、等)を合
量で5重量%まで添加してもよい。The low-melting glass of the present invention substantially comprises the above-mentioned components. In addition, P 2 O 5 , SiO 2 , Al 2 O 3 , M
gO, CaO, SrO, BaO, Y 2 O 3, TiO 2, Z
rO 2 , MoO 3 , WO 3 , MnO, Fe 2 O 3 , Rh
2 O 3 , CoO, NiO, PdO, CuO, Ag 2 O, B
i 2 O 3 and rare earth oxides (La 2 O 3 , CeO 2 , etc.) may be added up to 5% by weight in total.
【0018】本発明の低融点ガラスは、たとえば、ブラ
ウン管におけるパネルとファンネルの封着、プラズマデ
ィスプレイパネル(PDP)、蛍光表示管(VFD)、
等のフラットディスプレイパネルにおける封着、被覆、
リブ形成、に好適であるが、その用途はこれらに限定さ
れない。The low-melting glass of the present invention can be used, for example, for sealing a panel and a funnel in a cathode ray tube, a plasma display panel (PDP), a fluorescent display tube (VFD),
Sealing, covering, etc. in flat display panels such as
It is suitable for rib formation, but its use is not limited to these.
【0019】[0019]
【実施例】表のZnOからTeO2までの欄にモル%で
表示した組成のガラスとなるように、原料を調合、混合
した。原料としては、ホウ酸および/または酸化ホウ
素、酸化亜鉛、酸化テルル、を用いた。調合、混合した
原料を白金るつぼに入れて1200℃で30分溶融し
た。このようにして得られた溶融ガラスをステンレス鋼
製ローラに流し込みフレーク化したあと、アルミナ製ボ
ールミルで100分間粉砕して粉末化しガラスフリット
を得た。EXAMPLES Raw materials were prepared and mixed so as to obtain a glass having a composition represented by mol% in the columns from ZnO to TeO 2 in the table. As a raw material, boric acid and / or boron oxide, zinc oxide, and tellurium oxide were used. The prepared and mixed raw materials were put in a platinum crucible and melted at 1200 ° C. for 30 minutes. The molten glass thus obtained was poured into a stainless steel roller and flaked, and then pulverized for 100 minutes with an alumina ball mill to obtain a glass frit.
【0020】前記ガラスフリットについて、以下の測定
を行った。ガラス転移点(℃)、軟化点(℃)、結晶化
温度(℃):DTAにより昇温速度10℃/分の条件下
で測定した。ガラス転移点については450℃以上、軟
化点については630℃以下、であるものが好ましい。The following measurements were made on the glass frit. Glass transition point (° C.), softening point (° C.), crystallization temperature (° C.): Measured by DTA at a rate of 10 ° C./min. Those having a glass transition point of 450 ° C. or higher and a softening point of 630 ° C. or lower are preferable.
【0021】膨張係数(×10-7/℃):粉末化する前
のガラスフレークを再溶融後ステンレス鋼製板上に流し
出し、ガラス転移点近傍の温度で徐冷した。得られたガ
ラスを2mm×20mmφの棒状に加工し、石英ガラス
を標準試料として熱示差膨張計により50〜250℃の
平均線膨張係数を測定した。50×10-7〜90×10
-7/℃であるものが好ましい。Expansion coefficient (× 10 −7 / ° C.): The glass flakes before powdering were re-melted, poured out onto a stainless steel plate, and gradually cooled at a temperature near the glass transition point. The obtained glass was processed into a rod shape of 2 mm × 20 mmφ, and the average linear thermal expansion coefficient at 50 to 250 ° C. was measured with a thermal differential dilatometer using quartz glass as a standard sample. 50 × 10 -7 to 90 × 10
It is preferably -7 / ° C.
【0022】耐水性(%):膨張係数測定用サンプルと
同じサンプルを80℃の水に2時間浸漬し、浸漬前後の
重量から重量減少率を求めた。0.5%以下のものが好
ましい。Water resistance (%): The same sample as the sample for measuring the expansion coefficient was immersed in water at 80 ° C. for 2 hours, and the weight loss rate was determined from the weight before and after immersion. 0.5% or less is preferable.
【0023】例1〜4は実施例、例5〜7は比較例であ
る。例4についてはDTAの測定において結晶化ピーク
が認められず結晶化温度は測定できなかった。例7は失
透が顕著であり安定なガラスが得られなかった。Examples 1 to 4 are Examples and Examples 5 to 7 are Comparative Examples. In Example 4, no crystallization peak was observed in the measurement of DTA, and the crystallization temperature could not be measured. In Example 7, devitrification was remarkable, and a stable glass could not be obtained.
【0024】[0024]
【表1】 [Table 1]
【0025】[0025]
【発明の効果】本発明によれば、耐水性にすぐれ、鉛や
カドミウムを含まず、かつフッ素を含有しない低融点ガ
ラスを提供できる。According to the present invention, it is possible to provide a low melting point glass which is excellent in water resistance, does not contain lead or cadmium, and does not contain fluorine.
フロントページの続き Fターム(参考) 4G062 AA08 AA09 BB08 CC10 DA01 DB01 DC04 DC05 DD01 DE05 DE06 DF01 EA01 EA10 EB01 EC01 ED01 EE01 EF01 EG01 FA01 FA10 FB01 FC01 FD01 FE01 FF01 FG01 FH01 FJ01 FK01 FL01 GA01 GB01 GC01 GD03 GD04 GE01 HH01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM07 MM10 MM12 NN30 NN32 Continued on the front page F-term (reference) 4G062 AA08 AA09 BB08 CC10 DA01 DB01 DC04 DC05 DD01 DE05 DE06 DF01 EA01 EA10 EB01 EC01 ED01 EE01 EF01 EG01 FA01 FA10 FB01 FC01 FD01 FE01 FF01 FG01 FH01 FJ01 FK01 GC01 FL01 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM07 MM10 MM12 NN30 NN32
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6690299A JP2000264676A (en) | 1999-03-12 | 1999-03-12 | Low melting point glass |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6690299A JP2000264676A (en) | 1999-03-12 | 1999-03-12 | Low melting point glass |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000264676A true JP2000264676A (en) | 2000-09-26 |
Family
ID=13329350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6690299A Pending JP2000264676A (en) | 1999-03-12 | 1999-03-12 | Low melting point glass |
Country Status (1)
Country | Link |
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JP (1) | JP2000264676A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004074198A1 (en) * | 2003-02-19 | 2004-09-02 | Yamato Electronic Co., Ltd. | Lead-free glass material for use in sealing and, sealed article and method for sealing using the same |
WO2005000755A1 (en) * | 2003-06-27 | 2005-01-06 | Yamato Electronic Co., Ltd. | Lead-free glass material for use in sealing and, sealed article and method for sealing using the same |
KR100795068B1 (en) * | 2005-08-31 | 2008-01-17 | 야마토 덴시 가부시키가이샤 | Lead-free glass material for use in sealing and, sealed article and method for sealing using the same |
JP2008171811A (en) * | 2007-01-05 | 2008-07-24 | Samsung Sdi Co Ltd | Glass frit, composition for sealing material, and light emitting device |
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US8308993B2 (en) | 2008-01-30 | 2012-11-13 | Basf Se | Conductive inks |
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1999
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WO2005000755A1 (en) * | 2003-06-27 | 2005-01-06 | Yamato Electronic Co., Ltd. | Lead-free glass material for use in sealing and, sealed article and method for sealing using the same |
US7585798B2 (en) | 2003-06-27 | 2009-09-08 | Yamato Electronic Co., Ltd. | Lead-free glass material for use in sealing and, sealed article and method for sealing using the same |
KR100795068B1 (en) * | 2005-08-31 | 2008-01-17 | 야마토 덴시 가부시키가이샤 | Lead-free glass material for use in sealing and, sealed article and method for sealing using the same |
JP2008171811A (en) * | 2007-01-05 | 2008-07-24 | Samsung Sdi Co Ltd | Glass frit, composition for sealing material, and light emitting device |
US8546281B2 (en) | 2007-01-05 | 2013-10-01 | Samsung Display Co., Ltd. | Glass plate with glass frit structure |
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US7935279B2 (en) | 2008-01-30 | 2011-05-03 | Basf Se | Glass frits |
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