JP2000260573A - Organic el element - Google Patents
Organic el elementInfo
- Publication number
- JP2000260573A JP2000260573A JP11064601A JP6460199A JP2000260573A JP 2000260573 A JP2000260573 A JP 2000260573A JP 11064601 A JP11064601 A JP 11064601A JP 6460199 A JP6460199 A JP 6460199A JP 2000260573 A JP2000260573 A JP 2000260573A
- Authority
- JP
- Japan
- Prior art keywords
- transparent
- transparent electrode
- electrode
- organic
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000007772 electrode material Substances 0.000 claims abstract description 4
- 239000012212 insulator Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 4
- 229910052744 lithium Inorganic materials 0.000 abstract description 4
- 229910052792 caesium Inorganic materials 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004020 luminiscence type Methods 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 239000011295 pitch Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- ZMLPKJYZRQZLDA-UHFFFAOYSA-N 1-(2-phenylethenyl)-4-[4-(2-phenylethenyl)phenyl]benzene Chemical group C=1C=CC=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC1=CC=CC=C1 ZMLPKJYZRQZLDA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
Landscapes
- Non-Insulated Conductors (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、平面光源やディ
スプレイ、その他所定のパターン等の発光表示に用いら
れる有機ＥＬ素子に関する。[0001] 1. Field of the Invention [0002] The present invention relates to an organic EL device used for light emission display of a flat light source, a display, and other predetermined patterns.
【０００２】[0002]
【従来の技術】従来、有機ＥＬ（エレクトルミネッセン
ス）素子は、透明な基板に透孔性のＩＴＯ膜を一面に形
成し、所定のストライプ状等の形状になるようにエッチ
ングして透明電極を形成し、さらにこの透明電極の表面
に発光層を形成している。この発光層は、有機ＥＬ材料
であり、α−ＮＰＤやトリフェニルジアミン誘導体（Ｔ
ＰＤ）等のホール輸送材料を設け、その上に発光材料で
あるアルミキノリール錯体（Ａｌｑ３）等の電子輸送材
料、さらに各種発光材料を積層したものや、これらの混
合層からなる。そしてこの発光層の表面で、透明電極と
直交する方向に、Ａｌ，Ｌｉ，Ａｇ，Ｍｇ，Ｉｎ等の金
属からなるストライプ状の背面電極が透明電極と対向す
るように設けられ、発光部を形成している。そして発光
部において、透明電極と背面電極間に電圧を印加し、こ
れら各電極が形成するストライプの交点で発光する、い
わゆる単純マトリックスタイプの発光装置が一般的であ
った。2. Description of the Related Art Conventionally, an organic EL (electroluminescence) element has a transparent electrode formed on a transparent substrate by forming a porous ITO film on one surface and etching it into a predetermined stripe shape or the like. Further, a light emitting layer is formed on the surface of the transparent electrode. This light emitting layer is an organic EL material, such as α-NPD or triphenyldiamine derivative (T
It comprises a hole transporting material such as PD), an electron transporting material such as an aluminum quinolyl complex (Alq 3 ) as a light emitting material, and various light emitting materials laminated thereon, or a mixed layer thereof. On the surface of the light-emitting layer, a stripe-shaped back electrode made of a metal such as Al, Li, Ag, Mg, or In is provided so as to face the transparent electrode in a direction orthogonal to the transparent electrode to form a light-emitting portion. are doing. In a light emitting portion, a so-called simple matrix type light emitting device in which a voltage is applied between a transparent electrode and a back electrode and light is emitted at intersections of stripes formed by these electrodes is generally used.
【０００３】このような有機ＥＬ素子の駆動方法は、Ｉ
ＴＯの抵抗値がＡｌ−Ｌｉよりも高いので、Ａｌ−Ｌｉ
の背面電極側を走査電極として、ＩＴＯの透明電極側で
は並列に信号を出すようにしていた。[0003] The driving method of such an organic EL element is as follows.
Since the resistance value of TO is higher than that of Al-Li, Al-Li
The back electrode side is used as a scanning electrode, and signals are output in parallel on the transparent electrode side of ITO.
【０００４】[0004]
【発明が解決しようとする課題】上記従来の技術の場
合、このドットマトリクス表示の場合、微細な表示を行
うためのものや大画面化した場合、ドット数を多くする
必要があるため各ストライプ数が多くなり、１ライン当
たりの発光時間が短くなってしまい画面が暗くなるもの
であった。ここで例えば、画面の周期を１／ｎ秒、走査
する背面電極の本数をｍとすると、透明電極は並列に駆
動されるので、背面電極との交点での点灯時間は１／ｍ
ｎ秒である。実験的には、人の目でちらつきなく画面を
見られるのは１／２４秒以下であり、この状態で、走査
する電極の本数が１２８を超えると、１発光素子あたり
の発光時間が短く、画像が暗く質が悪くなってしまうも
のであった。In the case of the above-mentioned prior art, in the case of this dot matrix display, it is necessary to increase the number of dots in order to perform a fine display or to increase the number of dots when the screen is enlarged. And the light emission time per line was shortened, resulting in a dark screen. Here, for example, if the screen cycle is 1 / n second and the number of back electrodes to be scanned is m, since the transparent electrodes are driven in parallel, the lighting time at the intersection with the back electrodes is 1 / m.
n seconds. Experimentally, it is less than 1/24 second that the screen can be seen without flicker by human eyes. In this state, if the number of electrodes to be scanned exceeds 128, the light emission time per light emitting element is short, The image was dark and of poor quality.
【０００５】一方、画質を上げるために走査側電極の本
数を増やすと、画面面積が一定であれば、電極の太さが
細くなり、透明電極は比較的抵抗値が高いので画面の位
置により電流値が変わり、画面に明るさむらができてし
まうという問題もあった。On the other hand, if the number of scanning electrodes is increased in order to improve the image quality, the thickness of the electrodes becomes thinner if the screen area is constant, and the transparent electrode has a relatively high resistance value. There was also a problem that the value changed and brightness unevenness was generated on the screen.
【０００６】なお、ＴＦＴ（薄膜トランジスタ）を用い
た駆動回路を利用することにより上記問題点は解決され
得るが、ＴＦＴは高価であり、ＥＬ素子を利用した表示
装置の価格も高くなってしまうものであった。Although the above problem can be solved by using a driving circuit using a TFT (thin film transistor), the TFT is expensive and the price of a display device using an EL element becomes high. there were.
【０００７】この発明は上記従来の問題点に鑑みてなさ
れたものであり、簡単な構成で安価に製造可能であり、
明るく高品質な発光表示を可能にする有機ＥＬ素子を提
供することを目的とする。The present invention has been made in view of the above-mentioned conventional problems, and can be manufactured at a low cost with a simple structure.
It is an object of the present invention to provide an organic EL device that enables bright and high-quality light-emitting display.
【０００８】[0008]
【課題を解決するための手段】この発明の有機ＥＬ素子
は、ガラスや石英、樹脂等の透明基板の表面にＩＴＯや
ＳｎＯ２等の透明な電極材料により形成された透明電極
と、上記透明電極に積層された有機ＥＬ材料からなる発
光層と、この発光層に積層され、上記透明電極に対向し
て形成されたＡｌ，Ｌｉ，Ｃｓ等からなる背面電極とを
備える。そして、上記透明電極のパターンに沿って上記
透明電極に接して、上記透明基板表面に埋め込まれたワ
イヤを備えた有機ＥＬ素子である。The organic EL device of the SUMMARY OF THE INVENTION This invention includes a glass or quartz, transparent electrode formed of a transparent electrode material 2 such as ITO or SnO on the surface of a transparent substrate such as a resin, the transparent electrode And a back electrode made of Al, Li, Cs, or the like, which is formed on the light emitting layer and is opposed to the transparent electrode. The organic EL device includes a wire embedded in the surface of the transparent substrate in contact with the transparent electrode along the pattern of the transparent electrode.
【０００９】また、上記ワイヤはその一部が上記透明基
板表面から露出し、その露出部分は上記透明基板表面と
なめらかに連続している。さらに、上記透明基板の表面
にＳｉＯ２等の透明絶縁体層を設け、この透明絶縁体層
には上記透明電極の各発光画素に対応して開口部を設
け、この開口部により上記ワイヤと上記透明電極とを接
続している。A part of the wire is exposed from the surface of the transparent substrate, and the exposed portion is smoothly continuous with the surface of the transparent substrate. Further, a transparent insulator layer such as SiO 2 is provided on the surface of the transparent substrate, and an opening is provided in the transparent insulator layer corresponding to each light emitting pixel of the transparent electrode. Connected to transparent electrode.
【００１０】さらに、上記透明電極はストライプ状に形
成され、上記透明電極は複数本の組毎に外部の駆動回路
に接続されている。上記透明電極の各組毎に、上記背面
電極が別々に上記外部の駆動回路に接続され、上記透明
電極側を走査電極として上記各組毎に上記透明電極を走
査して上記発光層に電圧をかけるものである。Further, the transparent electrodes are formed in a stripe shape, and the transparent electrodes are connected to an external drive circuit for each of a plurality of sets. For each set of the transparent electrodes, the back electrode is separately connected to the external drive circuit, and the transparent electrode side is used as a scan electrode to scan the transparent electrodes for each set and apply a voltage to the light emitting layer. It is something to put on.
【００１１】[0011]
【発明の実施の形態】以下、この発明の実施の形態につ
いて図面に基づいて説明する。図１、図２はこの発明の
有機ＥＬ素子の一実施形態を示すもので、この実施形態
のＥＬ素子は、ガラスや石英、樹脂等の透明基板１０の
一方の表面に、ＳｉＯ２等の透明絶縁体層１４を介し
て、所定のピッチでストライプ状の透明電極１２が設け
られている。透明電極１２は、ＩＴＯやＳｎＯ２等から
なり、１０００〜２０００Åの厚さに形成され、図１に
おいて紙面に直角方向に透明電極１２が延びている。透
明絶縁体層１４は、透明電極１２と直交する方向で１０
００〜２０００Åの厚さでストライプ状に形成され、そ
の間は透明基板１０が露出している。Embodiments of the present invention will be described below with reference to the drawings. FIGS. 1 and 2 show an embodiment of the organic EL device of the present invention. The EL device of this embodiment has a transparent substrate 10 made of glass, quartz, resin, or the like on one surface of a transparent substrate 10 such as SiO 2. Stripe-shaped transparent electrodes 12 are provided at a predetermined pitch via an insulator layer 14. The transparent electrode 12 is made of ITO, SnO 2 or the like, is formed to a thickness of 1000 to 2000 °, and the transparent electrode 12 extends in a direction perpendicular to the plane of FIG. The transparent insulator layer 14 has a thickness of 10 in a direction orthogonal to the transparent electrode 12.
The transparent substrate 10 is formed in a stripe shape with a thickness of 00 to 2000 mm.
【００１２】透明基板１０の表面には、透明電極１２の
各々の一方の側縁部に重なるように沿ってワイヤ１６が
埋設されている。ワイヤ１６は、銅やアルミニウム等の
電気抵抗の小さい材料からなり、ワイヤ１６の側面が長
手方向に沿って一部露出している。ワイヤ１６は、たと
えば３０μｍの太さであり、発光画素の間のスペース部
分に位置する。またワイヤ１６は透明基板１０の周縁部
では、外部に接続されるリード端子としても用いること
ができる。A wire 16 is embedded in the surface of the transparent substrate 10 so as to overlap one side edge of each of the transparent electrodes 12. The wire 16 is made of a material having low electric resistance, such as copper or aluminum, and a part of the side surface of the wire 16 is exposed along the longitudinal direction. The wire 16 has a thickness of, for example, 30 μm, and is located in a space between the light emitting pixels. The wire 16 can also be used as a lead terminal connected to the outside at the periphery of the transparent substrate 10.
【００１３】透明電極１２およびその間に露出した透明
絶縁体層１４には、銅フタロシアニン（ＣｕＰｃ）等の
図示しないバッファー層を介して発光層１８が積層され
ている。発光層１８は、５００Å程度の厚さのホール輸
送材料２０、及び５００Å程度の厚さの電子輸送材料２
２からなる。ホール輸送材料２０は、透明電極１２およ
びその間に露出した透明絶縁体層１４の全面に積層され
ている。A light emitting layer 18 is laminated on the transparent electrode 12 and the transparent insulator layer 14 exposed therebetween through a buffer layer (not shown) such as copper phthalocyanine (CuPc). The light emitting layer 18 includes a hole transporting material 20 having a thickness of about 500 ° and an electron transporting material 2 having a thickness of about 500 °.
Consists of two. The hole transport material 20 is laminated on the entire surface of the transparent electrode 12 and the transparent insulator layer 14 exposed therebetween.
【００１４】また、電子輸送材料２２は、光の３原色に
対応した３発光パターンを一組として、透明電極１２に
沿って複数本形成されている。電子輸送材料２２は各透
明電極１２に対応して３本の発光パターン２２Ｒ，２２
Ｂ，２２Ｇが各々わずかに間隔を空けてストライプ状に
形成されている。A plurality of electron transporting materials 22 are formed along the transparent electrode 12 as a set of three light emitting patterns corresponding to the three primary colors of light. The electron transporting material 22 includes three light emitting patterns 22R and 22 corresponding to each transparent electrode 12.
B and 22G are each formed in a stripe shape at a slight interval.
【００１５】ここで、発光層１８は、母体材料のうちホ
ール輸送材料２０としては、α−ＮＰＤ、トリフェニル
ジアミン誘導体（ＴＰＤ）、ヒドラゾン誘導体、アリー
ルアミン誘導体等がある。また、電子輸送材料２２の赤
色発光材料としてはＤＣＭ、青色発光材料としては、ジ
スチリルビフェニル誘導体（ＤＰＶＢｉ）、緑色発光材
料としてはアルミキノリール錯体（Ａｌｑ3）等の有機
ＥＬ発光材料を使用する。さらに適宜の発光材料を混合
しても良い。Here, as the hole transporting material 20 of the base material of the light emitting layer 18, there are α-NPD, triphenyldiamine derivative (TPD), hydrazone derivative, arylamine derivative and the like. In addition, an organic EL light emitting material such as DCM is used as the red light emitting material of the electron transport material 22, a distyrylbiphenyl derivative (DPVBi) is used as the blue light emitting material, and an aluminum quinolyl complex (Alq3) is used as the green light emitting material. Further, an appropriate light emitting material may be mixed.
【００１６】電子輸送材料２２には、透明電極１２と直
交する方向でストライプ状に、背面電極２４が積層され
ている。背面電極２４は、図２に示すように、透明絶縁
体層１４と対向して平行に形成され、たとえば３３０μ
ｍピッチで３０μｍの間隔をあけて形成されている。背
面電極２４は、Ａｌ，Ｌｉ，Ａｇ，Ｍｇ，Ｉｎ，Ｃｓ等
を含む金属薄膜からなる。背面電極２４およびその間の
発光層１８には、ＳｉＯ等の絶縁層が全面に積層されて
いる。A back electrode 24 is laminated on the electron transporting material 22 in a stripe shape in a direction orthogonal to the transparent electrode 12. As shown in FIG. 2, the back electrode 24 is formed in parallel with the transparent insulator layer 14 so as to face the transparent insulator layer 14.
They are formed at intervals of 30 μm at m pitches. The back electrode 24 is made of a metal thin film containing Al, Li, Ag, Mg, In, Cs and the like. An insulating layer such as SiO is laminated on the entire surface of the back electrode 24 and the light emitting layer 18 therebetween.
【００１７】この実施形態の有機ＥＬ素子の製造方法
は、平滑な透明基板１０を形成する際にワイヤ１６を所
定のピッチで埋め込む。埋め込み方法は、透明基板１０
の溶融状態でワイヤ１４を表面に埋め込み、乾燥後、研
磨してワイヤ１４の側面を露出させる。In the method of manufacturing an organic EL device according to this embodiment, the wires 16 are embedded at a predetermined pitch when the smooth transparent substrate 10 is formed. The embedding method is the transparent substrate 10
In a molten state, the wire 14 is embedded in the surface, dried and polished to expose the side surface of the wire 14.
【００１８】この後、透明基板１０を真空装置内にセッ
トし、図１（Ａ）に示すように、透明絶縁体層１４を蒸
着する。このとき、単繊維ワイヤ等によるワイヤマスク
を介して蒸着する。ワイヤマスクは、例えば３３０μｍ
ピッチにマスクフレームに配置し、図２に示すように、
透明絶縁体層１４の形成されていない開口部である境界
部２６を透明基板１０上に形成する。Thereafter, the transparent substrate 10 is set in a vacuum device, and a transparent insulator layer 14 is deposited as shown in FIG. At this time, vapor deposition is performed via a wire mask of a single fiber wire or the like. The wire mask is, for example, 330 μm
Placed on the mask frame at the pitch, as shown in FIG. 2,
A boundary 26, which is an opening where the transparent insulator layer 14 is not formed, is formed on the transparent substrate 10.
【００１９】次に、図１（Ｂ）に示すように、ＩＴＯ等
の透明電極材料を蒸着等の真空薄膜形成技術により設け
る。このとき、透明電極１２は、たとえば３００μｍの
幅で２０μｍ程度の間隔を空けて複数本形成されるよう
に、ワイヤマスク２８をワイヤ１４と平行に配置して蒸
着する。ワイヤマスク２８は、ワイヤ１４に対して１０
〜２０μｍ程度ずらして位置させる。Next, as shown in FIG. 1B, a transparent electrode material such as ITO is provided by a vacuum thin film forming technique such as vapor deposition. At this time, the wire mask 28 is disposed in parallel with the wires 14 and vapor-deposited so that a plurality of the transparent electrodes 12 are formed, for example, with a width of 300 μm and an interval of about 20 μm. The wire mask 28 applies 10
It is shifted by about 20 μm.
【００２０】次に、図１（Ｃ）に示すように、透明電極
１２の表面に、５００〜１０００Åの厚さのバッファー
層を全面に蒸着し、その後ホール輸送材料２０を２５０
〜５００Åの厚さに蒸着し、さらに、電子輸送材料２２
を同様に蒸着する。Next, as shown in FIG. 1 (C), a buffer layer having a thickness of 500 to 1000.degree.
To a thickness of about 500 °, and furthermore, an electron transport material 22
Is similarly deposited.
【００２１】この後、図１（Ｃ）に示すように、背面電
極２４を蒸着する。背面電極２４の蒸着には、ワイヤマ
スク３０を用いる。ワイヤマスク３０は、透明絶縁層１
４の蒸着時のマスクと同様に配置し、境界部２６上に位
置するようにして蒸着を行う。さらに図示しない保護層
等を蒸着し、真空薄膜形成装置から取り出す。Thereafter, as shown in FIG. 1C, a back electrode 24 is deposited. The wire mask 30 is used for vapor deposition of the back electrode 24. The wire mask 30 is formed of the transparent insulating layer 1
The deposition is performed in the same manner as the mask at the time of vapor deposition of No. 4 and positioned on the boundary portion 26. Further, a protection layer or the like (not shown) is deposited and taken out from the vacuum thin film forming apparatus.
【００２２】そして、この透明基板１０上の発光部を乾
燥窒素雰囲気中で乾燥剤を入れて密封する。Then, the light-emitting portion on the transparent substrate 10 is sealed with a desiccant in a dry nitrogen atmosphere.
【００２３】この実施形態のＥＬ素子の駆動方法は、表
面側の透明電極にワイヤ１６が接続しているので、ワイ
ヤ１６を走査電極として外部の駆動回路に接続する。そ
して、例えば、２５６×２５６ドットのカラー表示を行
う場合、透明電極が２５６本であり、各ドットの発光時
間を長くするため２組に分けて１２８本ずつの組にして
各組毎に走査する。このとき、背面電極２４では１２８
本づつの透明電極１２に対応して設ける。したがって、
の背面電極は、分割した分の本数倍に形成される。この
実施形態では、背面電極２４は表示装置の背面側である
ので、本数が増えても配線処理が容易に可能である。In the method of driving the EL element of this embodiment, since the wire 16 is connected to the transparent electrode on the front surface, the wire 16 is connected to an external drive circuit as a scanning electrode. For example, when performing a color display of 256 × 256 dots, the number of transparent electrodes is 256, and each set is scanned in 128 sets in two sets in order to lengthen the emission time of each dot. . At this time, 128
It is provided corresponding to one transparent electrode 12. Therefore,
Are formed in a number of times equal to the number of the divided electrodes. In this embodiment, since the back electrode 24 is on the back side of the display device, wiring processing can be easily performed even if the number of the back electrodes 24 is increased.
【００２４】この実施形態のＥＬ素子によれば、透明電
極１２に沿ってワイヤ１６が形成され、透明電極１２の
各部位までの抵抗値を低い値にすることができる。した
がって、透明電極１２側を走査電極とし、背面電極２４
側には配線を多く設けることができ、画素数の多い表示
装置においても、分割走査等により発光時間の長い表示
装置を提供することができる。また大画面にも向いてい
るものであり、ワイヤ１６は発光画素間に位置し、自発
光素子であるので目立たないものである。According to the EL device of this embodiment, the wire 16 is formed along the transparent electrode 12 so that the resistance of each part of the transparent electrode 12 can be reduced. Therefore, the transparent electrode 12 side is used as a scanning electrode, and the back electrode 24
A large number of wirings can be provided on the side, and a display device with a long light emission time can be provided by a division scan or the like even in a display device with a large number of pixels. It is also suitable for a large screen, and the wires 16 are located between the light emitting pixels and are inconspicuous because they are self-luminous elements.
【００２５】なおこの発明の有機ＥＬ素子は、上記実施
形態に限定されるものではなく、マスク蒸着のマスクの
配置や形状も上記実施形態以外に、穴明きマスクや、格
子状マスク等により形成可能である。また、透明絶縁層
は、ガラス等の透明基板表面の汚染やその他の悪影響を
避けるために用いることが好ましいが、必ずしも設けな
くても良く、透明基板表面の状態が良い場合等において
は設けないこともある。The organic EL device of the present invention is not limited to the above embodiment, and the arrangement and shape of the mask for mask evaporation are not limited to the above embodiment, but may be formed by a perforated mask, a lattice mask or the like. It is possible. In addition, the transparent insulating layer is preferably used to avoid contamination of the surface of the transparent substrate such as glass and other adverse effects, but is not necessarily provided, and is not provided when the surface of the transparent substrate is in good condition. There is also.
【００２６】[0026]
【発明の効果】この発明の有機ＥＬ素子は、透明電極の
抵抗値をきわめて小さくすることができ、全体として均
一で明るい画面を形成することができる。さらに、透明
電極側で表示のための走査が可能であり、背面電極側に
複雑な配線を形成することができ、より大きく高精細
で、明るい画面を可能にする。According to the organic EL device of the present invention, the resistance value of the transparent electrode can be extremely reduced, and a uniform and bright screen can be formed as a whole. Further, scanning for display can be performed on the transparent electrode side, and complicated wiring can be formed on the back electrode side, thereby enabling a larger, higher definition, and bright screen.
【図１】この発明の第一実施形態の有機ＥＬ素子の製造
工程を示す部分縦断面図である。FIG. 1 is a partial longitudinal sectional view showing a manufacturing process of an organic EL device according to a first embodiment of the present invention.
【図２】この発明の第一実施形態の有機ＥＬ素子の背面
電極と透明電極およびワイヤ等を示す部分平面図（Ａ）
とＢ−Ｂ線断面図（Ｂ）である。FIG. 2 is a partial plan view showing a back electrode, a transparent electrode, wires, and the like of the organic EL element according to the first embodiment of the present invention (A).
And (B) is a sectional view taken along line BB.
１０ 透明基板 １２ 透明電極 １４ 透明絶縁体層 １６ ワイヤ １８ 発光層 ２０ ホール輸送材料 ２２ 電子輸送材料 ２４ 背面電極 DESCRIPTION OF SYMBOLS 10 Transparent substrate 12 Transparent electrode 14 Transparent insulator layer 16 Wire 18 Light emitting layer 20 Hole transport material 22 Electron transport material 24 Back electrode
フロントページの続き (72)発明者 山本 肇 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 (72)発明者 丹保 哲也 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 Ｆターム(参考） 3K007 AB00 AB18 BA06 CA00 CA01 CA02 CA05 CB01 DA00 DB03 EB00 FA01 FA03 5G307 FA01 FA02 FB01 FC10 Continuing on the front page (72) Inventor Hajime Yamamoto 3158 Shimo-Okubo, Osawano-cho, Kamishinkawa-gun, Toyama Prefecture Inside Hokuriku Electric Industries, Ltd. F term (reference) 3K007 AB00 AB18 BA06 CA00 CA01 CA02 CA05 CB01 DA00 DB03 EB00 FA01 FA03 5G307 FA01 FA02 FB01 FC10
Claims (5)
り形成された透明電極と、上記透明電極に積層された有
機ＥＬ材料からなる発光層と、この発光層に積層され、
上記透明電極に対向して形成された背面電極とを有し、
上記透明電極のパターンに沿って上記透明電極に接して
上記透明基板表面に埋め込まれたワイヤを備えたことを
特徴とする有機ＥＬ素子。1. A transparent electrode formed of a transparent electrode material on a surface of a transparent substrate, a light emitting layer made of an organic EL material laminated on the transparent electrode, and a light emitting layer laminated on the light emitting layer.
A back electrode formed opposite to the transparent electrode,
An organic EL device comprising a wire embedded in the surface of the transparent substrate in contact with the transparent electrode along the pattern of the transparent electrode.
面から露出し、その露出部分は上記透明基板表面となめ
らかに連続していることを特徴とする請求項１記載の有
機ＥＬ素子。2. The organic EL device according to claim 1, wherein a part of the wire is exposed from the surface of the transparent substrate, and the exposed portion is smoothly continuous with the surface of the transparent substrate.
け、この透明絶縁体層には上記透明電極の各発光画素に
対応して開口部を設け、この開口部により上記ワイヤと
上記透明電極とを接続したことを特徴とする請求項１ま
たは２記載の有機ＥＬ素子。3. A transparent insulator layer is provided on a surface of the transparent substrate, and an opening is provided in the transparent insulator layer in correspondence with each light emitting pixel of the transparent electrode. 3. The organic EL device according to claim 1, wherein the organic EL device is connected to an electrode.
れ、上記透明電極は複数本の組毎に外部の駆動回路に接
続されることを特徴とする請求項１、２または３記載の
有機ＥＬ素子。4. The organic EL device according to claim 1, wherein the transparent electrodes are formed in a stripe shape, and the transparent electrodes are connected to an external drive circuit for each of a plurality of sets. .
部の駆動回路に接続され、上記透明電極の各組毎に、上
記背面電極が別々に上記外部の駆動回路に接続され、上
記透明電極側を走査電極として上記各組毎に上記透明電
極を走査して上記発光層に電圧をかけることを特徴とす
る請求項４記載の有機ＥＬ素子。5. The plurality of transparent electrodes are connected to an external drive circuit for each of a plurality of sets, and for each set of the transparent electrodes, the back electrode is separately connected to the external drive circuit. 5. The organic EL device according to claim 4, wherein the transparent electrode side is used as a scanning electrode, and the transparent electrode is scanned for each set to apply a voltage to the light emitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11064601A JP2000260573A (en) | 1999-03-11 | 1999-03-11 | Organic el element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11064601A JP2000260573A (en) | 1999-03-11 | 1999-03-11 | Organic el element |
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| Publication Number | Publication Date |
|---|---|
| JP2000260573A true JP2000260573A (en) | 2000-09-22 |
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ID=13262955
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|---|---|---|---|
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Cited By (7)
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|---|---|---|---|---|
| JP2007519177A (en) * | 2003-07-16 | 2007-07-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Electroluminescent device with uniform brightness |
| WO2007119200A3 (en) * | 2006-04-18 | 2008-03-27 | Koninkl Philips Electronics Nv | An electro-optic device and a method for producing the same |
| WO2007128971A3 (en) * | 2006-04-12 | 2008-04-03 | Cambridge Display Tech Ltd | Optoelectronic display and method of manufacturing the same |
| JP2008277202A (en) * | 2007-05-03 | 2008-11-13 | Aitesu:Kk | Multilayer board and manufacturing method thereof |
| JP2009519564A (en) * | 2005-12-12 | 2009-05-14 | モア ビー． チャド | Wire-type flat panel display |
| FR2924274A1 (en) * | 2007-11-22 | 2009-05-29 | Saint Gobain | SUBSTRATE CARRYING AN ELECTRODE, ORGANIC ELECTROLUMINESCENT DEVICE INCORPORATING IT, AND ITS MANUFACTURING |
| WO2009078263A1 (en) * | 2007-12-14 | 2009-06-25 | Konica Minolta Holdings, Inc. | Transparent conductive film and method for manufacturing the same |
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1999
- 1999-03-11 JP JP11064601A patent/JP2000260573A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007519177A (en) * | 2003-07-16 | 2007-07-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Electroluminescent device with uniform brightness |
| JP2009519564A (en) * | 2005-12-12 | 2009-05-14 | モア ビー． チャド | Wire-type flat panel display |
| WO2007128971A3 (en) * | 2006-04-12 | 2008-04-03 | Cambridge Display Tech Ltd | Optoelectronic display and method of manufacturing the same |
| JP2009533810A (en) * | 2006-04-12 | 2009-09-17 | ケンブリッジ ディスプレイ テクノロジー リミテッド | Optoelectronic display and manufacturing method thereof |
| US8115216B2 (en) | 2006-04-12 | 2012-02-14 | Cambridge Display Technology Limited | Optoelectronic display and method of manufacturing the same |
| CN101449382B (en) * | 2006-04-12 | 2013-11-13 | 剑桥显示技术有限公司 | Optoelectronic display and method of manufacturing the same |
| KR101347995B1 (en) | 2006-04-12 | 2014-01-07 | 캠브리지 디스플레이 테크놀로지 리미티드 | Optoelectronic display and method of manufacturing the same |
| WO2007119200A3 (en) * | 2006-04-18 | 2008-03-27 | Koninkl Philips Electronics Nv | An electro-optic device and a method for producing the same |
| JP2008277202A (en) * | 2007-05-03 | 2008-11-13 | Aitesu:Kk | Multilayer board and manufacturing method thereof |
| WO2008139934A1 (en) * | 2007-05-03 | 2008-11-20 | International Test And Engineering Services Co., Ltd. | Multilayer board and method for manufacturing the same |
| FR2924274A1 (en) * | 2007-11-22 | 2009-05-29 | Saint Gobain | SUBSTRATE CARRYING AN ELECTRODE, ORGANIC ELECTROLUMINESCENT DEVICE INCORPORATING IT, AND ITS MANUFACTURING |
| WO2009078263A1 (en) * | 2007-12-14 | 2009-06-25 | Konica Minolta Holdings, Inc. | Transparent conductive film and method for manufacturing the same |
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