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JP2000241450A5 - - Google Patents

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Publication number
JP2000241450A5
JP2000241450A5 JP1999046283A JP4628399A JP2000241450A5 JP 2000241450 A5 JP2000241450 A5 JP 2000241450A5 JP 1999046283 A JP1999046283 A JP 1999046283A JP 4628399 A JP4628399 A JP 4628399A JP 2000241450 A5 JP2000241450 A5 JP 2000241450A5
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JP
Japan
Prior art keywords
microspring
bump
bump terminal
electrode pad
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999046283A
Other languages
Japanese (ja)
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JP2000241450A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP11046283A priority Critical patent/JP2000241450A/en
Priority claimed from JP11046283A external-priority patent/JP2000241450A/en
Publication of JP2000241450A publication Critical patent/JP2000241450A/en
Publication of JP2000241450A5 publication Critical patent/JP2000241450A5/ja
Pending legal-status Critical Current

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Description

上記電子回路は例えばアルミニウム、銅等の導電性金属からなる配線層がコンタクタ用基板2に対して複数層に渡って形成されている。各配線層の一端部には被検査体(例えば、ウエハ)の検査用電極パッド(図示せず)に対応する電極3が配線層と一体化している。各電極3には例えばニッケル、ニッケル合金等のバネ性に優れた導電性金属からなるマイクロスプリング5がそれぞれ固定され、これらのマイクロスプリング5でバンプ端子4が導通自在に支持されている。各マイクロスプリング5は例えば図2に示すように側面形状が略U字状の板バネとして形成され、それぞれのバンプ端子4と対応電極パッドが接触するとマイクロスプリング5がそれぞれ弾力的に変形してバンプ端子4がZ方向で移動し、各検査用電極パッドの高低差を吸収するようになっている。従って、コンタクタ1とウエハ間の平行が崩れ、各バンプ端子4と対応電極との間に高低差があっても各バンプ端子4はマイクロスプリング5を介して対応する電極パッドと確実に接触し、複数のICチップを確実に検査することができる。 In the electronic circuit, for example, a wiring layer made of a conductive metal such as aluminum or copper is formed over a plurality of layers with respect to the contactor substrate 2. At one end of each wiring layer, an electrode 3 corresponding to an inspection electrode pad (not shown) of an object to be inspected (for example, a wafer) is integrated with the wiring layer. Microsprings 5 made of a conductive metal having excellent springiness such as nickel and nickel alloy are fixed to each electrode 3, and the bump terminals 4 are electrically supported by these microsprings 5. As shown in FIG. 2, each microspring 5 is formed as a leaf spring having a substantially U-shaped side surface, and when each bump terminal 4 and a corresponding electrode pad come into contact with each other, the microspring 5 is elastically deformed and bumped. The terminal 4 moves in the Z direction to absorb the height difference of each inspection electrode pad. Therefore, even if the parallelism between the contactor 1 and the wafer is broken and there is a height difference between each bump terminal 4 and the corresponding electrode, each bump terminal 4 surely contacts the corresponding electrode pad via the microspring 5. A plurality of IC chips can be reliably inspected.

上記マイクロスプリング5はバンプ端子4と同一の導電性金属によって形成されたものであるが、これら両者は異なった導電性金属で形成されたものであっても良い。バンプ端子4をマイクロスプリング5と異なった導電性金属で成形する場合には、例えばタングステン、タングステンカーバイド−コバルト合金等の合金を用いてバンプ端子4を成形することができる。本実施形態ではU字状の板バネからなるマイクロスプリング5を例に挙げて説明したが、例えばJ字状、二股状等の種々の形態のマイクロスプリングを成形することができる。 The microspring 5 is made of the same conductive metal as the bump terminal 4, but both of them may be made of different conductive metals. When the bump terminal 4 is formed of a conductive metal different from that of the microspring 5, the bump terminal 4 can be formed by using an alloy such as tungsten or a tungsten carbide-cobalt alloy . In the present embodiment it has been described as an example microspring 5 consisting of U-shaped leaf spring, eg if J-shape can be molded in various forms of microspring bifurcated shape.

以上説明したように本実施形態によれば、バンプ端子4マイクロスプリング5を介してコンタクタ用基板2の電極3と接続されているため、検査時にウエハWとコンタクタ1の平行が多少崩れ各バンプ端子4と対応電極パッドP間の距離に相違があっても、バンプ端子4がマイクロスプリング5を介してその距離(高低差)を吸収することができ、ウエハWの各対応電極パッドPと確実に接触し、信頼性の高い検査を行うことができる。また、本実施形態のコンタクタ1はウエハWの電極パッドPの配列に対応してバンプ端子4を自由に配置することができる。 As described above, according to the present embodiment, since the bump terminal 4 is connected to the electrode 3 of the contactor substrate 2 via the microspring 5, the parallelism between the wafer W and the contactor 1 is slightly broken at the time of inspection, and each bump terminal is broken. Even if there is a difference in the distance between 4 and the corresponding electrode pad P, the bump terminal 4 can absorb the distance (height difference) via the microspring 5 and reliably with each corresponding electrode pad P of the wafer W. Can be contacted for reliable inspection. Further, in the contactor 1 of the present embodiment, the bump terminals 4 can be freely arranged according to the arrangement of the electrode pads P of the wafer W.

JP11046283A 1999-02-24 1999-02-24 Contactor Pending JP2000241450A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11046283A JP2000241450A (en) 1999-02-24 1999-02-24 Contactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11046283A JP2000241450A (en) 1999-02-24 1999-02-24 Contactor

Publications (2)

Publication Number Publication Date
JP2000241450A JP2000241450A (en) 2000-09-08
JP2000241450A5 true JP2000241450A5 (en) 2006-04-13

Family

ID=12742907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11046283A Pending JP2000241450A (en) 1999-02-24 1999-02-24 Contactor

Country Status (1)

Country Link
JP (1) JP2000241450A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040069259A (en) * 2001-12-25 2004-08-05 스미토모덴키고교가부시키가이샤 Contact probe
JP2015176721A (en) * 2014-03-14 2015-10-05 オムロン株式会社 Pressure contact terminal

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