JP2000031399A - Dielectric element and semiconductor storage device - Google Patents
Dielectric element and semiconductor storage deviceInfo
- Publication number
- JP2000031399A JP2000031399A JP11162684A JP16268499A JP2000031399A JP 2000031399 A JP2000031399 A JP 2000031399A JP 11162684 A JP11162684 A JP 11162684A JP 16268499 A JP16268499 A JP 16268499A JP 2000031399 A JP2000031399 A JP 2000031399A
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- JP
- Japan
- Prior art keywords
- dielectric
- film
- dielectrics
- electrodes
- composition ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title abstract description 10
- 239000013078 crystal Substances 0.000 claims description 18
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 10
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 230000010287 polarization Effects 0.000 abstract description 14
- 239000003989 dielectric material Substances 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000011229 interlayer Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910015802 BaSr Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 102200091804 rs104894738 Human genes 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は誘電体装置あるいはＤＲ
ＡＭのキャパシタ、強誘電体キャパシタを用いた不揮発
性メモリの構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric device or DR.
The present invention relates to a structure of a nonvolatile memory using an AM capacitor and a ferroelectric capacitor.
【０００２】[0002]
【従来の技術】図４に示すように、一般式ＡＢＯ3で表
わされるペロブスカイト結晶構造を有する酸化物誘電体
が２つの電極によって挟まれた構造を有する誘電体素子
に於て、従来は例えばジャーナル・オブ・アプライド・
フィジックス（Ｊ．Ａｐｐｌ．Ｐｈｙｓ）、１９９１
年、第７０巻、第１号、３８２項〜３８８項に記載され
ていたように、前記Ａ、Ｂ格子が各々１種類の元素から
構成されているか、あるいは少なくとも一方の格子を占
める元素が２元素以上の混晶であっても、前記混晶の組
成比は前記誘電体中に於て一定であり、その特性は例え
ば前記誘電体にＰＺＴ（Ｐｂ（ＺｒxＴｉ1-x）Ｏ3）を
用いた場合、Ｚｒの組成比ｘ＝０．５、誘電体膜厚０．
５μｍで残留分極Ｐｒは約１５μＣ／ｃｍ2程度であっ
た。2. Description of the Related Art As shown in FIG. 4, in a dielectric element having a structure in which an oxide dielectric having a perovskite crystal structure represented by the general formula ABO 3 is sandwiched between two electrodes, conventionally, for example, a journal is used.・ Applied ・
Physics (J. Appl. Phys), 1991
As described in Vol. 70, No. 1, Item 382-388, the A and B lattices are each composed of one type of element, or the element occupying at least one lattice is 2 Even in the case of a mixed crystal of elements or more, the composition ratio of the mixed crystal is constant in the dielectric, and its characteristics are, for example, PZT (Pb (Zr x Ti 1-x ) O 3 ) Is used, the composition ratio of Zr is x = 0.5, and the dielectric film thickness is 0.1.
At 5 μm, the residual polarization Pr was about 15 μC / cm 2 .
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、前記誘
電体の半導体基板への集積など微細加工化を考えると、
この残留分極の値では不十分であった。この残留分極向
上のためにはＺｒの組成比を減少させることが効果的で
あることが知られている。しかし、Ｚｒの組成比を減少
させることによって誘電体の格子定数が変化するため、
電極との格子マッチングが劣化して誘電体膜と電極との
密着性が悪くなり、結果的に内部応力による膜剥がれ等
を引き起こしていた。However, considering miniaturization such as integration of the dielectric on a semiconductor substrate,
The value of this remanent polarization was insufficient. It is known that reducing the composition ratio of Zr is effective for improving the remanent polarization. However, since decreasing the composition ratio of Zr changes the lattice constant of the dielectric,
The lattice matching with the electrode is deteriorated, and the adhesion between the dielectric film and the electrode is deteriorated. As a result, peeling of the film due to internal stress is caused.
【０００４】そこで本発明はかかる問題を解決するもの
で、その目的とするところは前記誘電体に於て残留分極
Ｐｒを向上させ、かつ膜剥がれのない誘電体構造を提供
することにある。Accordingly, the present invention is to solve such a problem, and an object of the present invention is to provide a dielectric structure in which the remanent polarization Pr in the dielectric is improved and the film is not peeled off.
【０００５】[0005]
【課題を解決するための手段】本発明の誘電体装置は、
一般式ＡＢＯ3で表わされるペロブスカイト結晶構造を
有する酸化物誘電体が２つの電極によって挟まれた構造
を有する誘電体素子に於て、前記Ａ、Ｂ格子の少なくと
も一方の格子を占める元素が２元素以上の混晶であり、
前記混晶の組成比が前記２つの電極の少なくとも一方の
電極の近くで前記誘電体中央部と異なることを特徴とす
る。The dielectric device of the present invention comprises:
In a dielectric element having a structure in which an oxide dielectric having a perovskite crystal structure represented by the general formula ABO 3 is sandwiched between two electrodes, at least one of the A and B lattices is occupied by two elements. Above mixed crystal,
The composition ratio of the mixed crystal is different from the central part of the dielectric near at least one of the two electrodes.
【０００６】さらに、前記誘電体素子に於て、前記混晶
組成比が前記２つの電極の近くで前記誘電体中央部と異
なることも好ましい。Further, in the dielectric element, it is preferable that the mixed crystal composition ratio is different from the central part of the dielectric near the two electrodes.
【０００７】その一つの例として、例えば前記誘電体が
チタン酸ジルコン酸鉛Ｐｂ（ＺｒxＴｉ1-x）Ｏ3である
場合、Ｚｒの組成比ｘが前記電極近くで前記誘電体中央
部より大きいことを特徴とするAs one example, when the dielectric is, for example, lead zirconate titanate Pb (Zr x Ti 1-x ) O 3 , the composition ratio x of Zr is close to the electrode and higher than the center of the dielectric. Characterized by large
【０００８】[0008]
【作用】本発明に於ける誘電体装置の構成によれば、電
極付近に於いては格子マッチングに優れた組成、誘電体
中央部に於いては分極特性に優れた組成とすることで、
残留分極Ｐｒを向上させ、かつ膜剥がれのない誘電体を
実現することができる。According to the structure of the dielectric device of the present invention, a composition excellent in lattice matching near the electrodes and a composition excellent in polarization characteristics near the center of the dielectric are provided.
It is possible to improve the remanent polarization Pr and realize a dielectric without film peeling.
【０００９】[0009]
【実施例】以下に本発明に於ける実施例を図に従って説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.
【００１０】図１は本発明の誘電体装置を半導体基板上
に形成した場合の第１の実施例の工程断面図である。能
動素子の形成された半導体基板１０１上に形成された第
１の層間絶縁膜１０２上に、白金（Ｐｔ）０．２μｍを
ＤＣスパッタ法にて成膜し、フォトレジストをマスクと
したフォト・リソグラフィとドライエッチング法を用い
て下部電極を形成する。次にＰＺＴ（ｘ＝０．５）０．
１μｍを成膜した後、ＰＺＴ（ｘ＝０．８）０．３μ
ｍ、続いてＰＺＴ（ｘ＝０．５）０．１μｍを各々ＲＦ
スパッタ法で成膜する。そして前記上部電極と同様にフ
ォト・リソグラフィとドライエッチング法を用いて誘電
体膜とした後、ＤＣスパッタ法でＰｔ膜を０．２μｍ成
膜して、フォト〜ドライエッチング工程を経て、上部電
極１０７とする。この後、気相成長法（ＣＶＤ法）によ
り二酸化珪素膜を成膜して第２の層間絶縁膜１０８と
し、次いでＡｌ配線層１０９の成膜、フォトリソグラフ
ィ、エッチングを経た後、ＣＶＤ法によって保護膜１１
０を形成して図１（ｅ）に示すような断面構造を得た。
本実施例において作成した誘電体装置において、その残
留分極Ｐｒを測定したところ印加電圧５Ｖで約３０μＣ
／ｃｍ2と従来に比べて大幅に向上した。また膜剥がれ
が無いだけでなく、膜疲労特性も改善され、印加電圧５
Ｖにおいて１０10回の分極反転を繰り返しても残留分極
の劣化は１０％程度であった。FIG. 1 is a process sectional view of a first embodiment when a dielectric device of the present invention is formed on a semiconductor substrate. Platinum (Pt) 0.2 μm is formed by DC sputtering on a first interlayer insulating film 102 formed on a semiconductor substrate 101 on which active elements are formed, and photolithography is performed using a photoresist as a mask. And a lower electrode is formed by using a dry etching method. Next, PZT (x = 0.5) 0.
After forming a film of 1 μm, PZT (x = 0.8) 0.3 μm
m and then 0.1 μm of PZT (x = 0.5)
The film is formed by a sputtering method. Then, after forming a dielectric film using photolithography and dry etching in the same manner as the upper electrode, a Pt film is formed to a thickness of 0.2 μm by DC sputtering. And Thereafter, a silicon dioxide film is formed by a vapor phase growth method (CVD method) to form a second interlayer insulating film 108, and then, after forming an Al wiring layer 109, photolithography, and etching, protection is performed by the CVD method. Membrane 11
0 was formed to obtain a cross-sectional structure as shown in FIG.
When the remanent polarization Pr of the dielectric device manufactured in this example was measured, it was determined that the
/ Cm 2 , which is much higher than the conventional one. In addition to the absence of film peeling, the film fatigue characteristics are also improved, and the applied voltage 5
Even if the polarization reversal was repeated 10 10 times at V, the deterioration of the remanent polarization was about 10%.
【００１１】図２は本発明の誘電体としてＢａXＳｒ1-X
ＴｉＯ3を半導体基板上に形成した場合の工程断面図で
ある。能動素子の形成された半導体基板２０１上に形成
された第１の層間絶縁膜２０２上に、白金（Ｐｔ）０．
２μｍをＤＣスパッタ法にて成膜し、フォトレジストを
マスクとしたフォト・リソグラフィとドライエッチング
法を用いて下部電極を形成する。次にＢａXＳｒ1-XＴｉ
Ｏ3をＲＦスパッタ法にて０．１μｍ成膜する。但し、
ＢａとＳｒの混晶組成比Ｘはスパッタ時のガス圧を変化
させることによって、図３のような勾配を描くように制
御した。その後、ＤＣスパッタ法でＰｔ膜を０．２μｍ
成膜して、前記下部電極と同様にフォト〜ドライエッチ
ング工程を経て、上部電極２０５とする。この後、気相
成長法（ＣＶＤ法）により二酸化珪素膜を成膜して第２
の層間絶縁膜２０６とし、次いでＡｌ配線層２０７の成
膜、フォトリソグラフィ、エッチングを経た後、ＣＶＤ
法によって保護膜２０８を形成して図２（ｄ）に示すよ
うな断面構造を得た。本実施例において作成した誘電体
装置において誘電体膜として使用したＢａXＳｒ1-XＴｉ
Ｏ3は自発分極を持たないため、容量密度を測定したと
ころ約６０ｆＦ／μｍ2と従来に比べて大幅に向上し
た。また、本実施例においてはリーク電流も１．５Ｖで
１０-9Ａ／ｃｍ2程度と低い。[0011] Ba X Sr 1-X 2 as a dielectric of the present invention
FIG. 4 is a process sectional view in the case where TiO 3 is formed on a semiconductor substrate. On a first interlayer insulating film 202 formed on a semiconductor substrate 201 on which an active element is formed, platinum (Pt) 0.
A 2 μm film is formed by DC sputtering, and a lower electrode is formed by photolithography using a photoresist as a mask and dry etching. Next, Ba X Sr 1-X Ti
O 3 is formed to a thickness of 0.1 μm by RF sputtering. However,
The mixed crystal composition ratio X of Ba and Sr was controlled so as to draw a gradient as shown in FIG. 3 by changing the gas pressure during sputtering. Thereafter, the Pt film was formed to a thickness of 0.2 μm by DC sputtering.
After forming a film, the upper electrode 205 is formed through a photo-dry etching process in the same manner as the lower electrode. Thereafter, a silicon dioxide film is formed by a vapor phase growth method (CVD method) to form a second silicon dioxide film.
After forming an Al wiring layer 207, photolithography, and etching,
The protective film 208 was formed by the method to obtain a cross-sectional structure as shown in FIG. In the dielectric apparatus produced in this example was used as a dielectric film Ba X Sr 1-X Ti
Since O 3 has no spontaneous polarization, its capacitance density was measured to be approximately 60 fF / μm 2, which was significantly improved as compared with the conventional case. Further, in this embodiment, the leak current is as low as about 10 −9 A / cm 2 at 1.5 V.
【００１２】以上で述べた実施例においては誘電体材料
としてＰｂ（ＺｒＴｉ）Ｏ3、（ＢａＳｒ）ＴｉＯ3を用
いたが、その他の前記誘電体材料として（ＰｂＬａ）
（ＺｒＴｉ）Ｏ3、Ｐｂ（ＭｎＮｂ）Ｏ3、（ＰｂＢａ）
ＴｉＯ3等を用いても効果的である。In the embodiment described above, Pb (ZrTi) O 3 and (BaSr) TiO 3 are used as dielectric materials, but (PbLa) is used as other dielectric materials.
(ZrTi) O 3 , Pb (MnNb) O 3 , (PbBa)
It is effective to use TiO 3 or the like.
【００１３】また、前記誘電体の混晶組成比を一方の電
極付近においてのみ変化させても有効であり、前記混晶
組成比の変化は第１の実施例のように段階的でも第２の
実施例のように連続的でもよい。さらにまた、前記誘電
体の成膜方法は、スパッタ法以外に、気相成長（ＣＶ
Ｄ）法、ゾル・ゲル法等を用いてもよい。It is effective to change the mixed crystal composition ratio of the dielectric only in the vicinity of one of the electrodes, and the change of the mixed crystal composition ratio may be stepwise or second as in the first embodiment. It may be continuous as in the embodiment. Furthermore, the film formation method of the dielectric may be a vapor deposition (CV) method other than the sputtering method.
D) method, a sol-gel method or the like may be used.
【００１４】[0014]
【発明の効果】以上述べたように、本発明による誘電体
装置においては格子マッチングを犠牲にすることがない
ため膜剥がれもなく、且つ誘電体中央部においては分極
特性に優れた組成比であるため、残留分極Ｐｒ、容量密
度を大きく向上させることができた。またリーク電流も
少なく、信頼性に優れたＤＲＡＭあるいは強誘電体を用
いた不揮発性メモリのキャパシタを実現できるものであ
る。As described above, in the dielectric device according to the present invention, the film is not peeled off without sacrificing the lattice matching, and the composition ratio is excellent in the polarization characteristic in the central part of the dielectric. Therefore, the remanent polarization Pr and the capacitance density could be greatly improved. In addition, it is possible to realize a DRAM or a nonvolatile memory capacitor using a ferroelectric material which has a small leakage current and has excellent reliability.
【図１】 本発明における第１の実施例の工程断面図。FIG. 1 is a process sectional view of a first embodiment of the present invention.
【図２】 本発明における第２の実施例の工程断面図。FIG. 2 is a process sectional view of a second embodiment of the present invention.
【図３】 本発明における第２の実施例の誘電体中での
混晶組成比変化の図。FIG. 3 is a diagram showing a change in a mixed crystal composition ratio in a dielectric according to a second embodiment of the present invention.
【図４】 従来技術における誘電体素子の断面図。FIG. 4 is a cross-sectional view of a dielectric element according to the related art.
半導体基板 １０１、２０１、４０
１ 第１の層間絶縁膜 １０２、２０
２、４０２ 下部電極 １０３、２０３、４０３ 誘電体膜１（ＰＺＴ（ｘ＝０．５）） １０４、４０４ 誘電体膜２（ＰＺＴ（ｘ＝０．８）） １０５ 誘電体膜３（ＰＺＴ（ｘ＝０．５）） １０６ 誘電体膜（ＢａXＳｒ1-XＴｉＯ3） ２０４ 上部電極 １０７、２０５、４０５ 第２の層間絶縁膜 １０８、２０６、４０６ Ａｌ配線層 １０９、２０７、４０７ 保護膜 １１０、２０８、４０８Semiconductor substrate 101, 201, 40
1 First interlayer insulating film 102, 20
2, 402 Lower electrode 103, 203, 403 Dielectric film 1 (PZT (x = 0.5)) 104, 404 Dielectric film 2 (PZT (x = 0.8)) 105 Dielectric film 3 (PZT (x = 0.5)) 106 dielectric film (Ba X Sr 1-X TiO 3) 204 upper electrode 107,205,405 second interlayer insulating film 108,206,406 Al wiring layers 109,207,407 protective film 110 , 208, 408
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１１年６月２５日（１９９９．６．２
５）[Submission Date] June 25, 1999 (1999.6.2
5)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】発明の名称[Correction target item name] Name of invention
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【発明の名称】 誘電体素子及び半導体記憶装置Patent application title: Dielectric element and semiconductor memory device
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Correction target item name] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【特許請求の範囲】[Claims]
【手続補正３】[Procedure amendment 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００５[Correction target item name] 0005
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００５】[0005]
【課題を解決するための手段】本発明の誘電体素子は、
一般式ＡＢＯ3で表わされるペロブスカイト結晶構造を
有する酸化物誘電体が２つの電極によって挟まれた構造
を有する誘電体素子であって、前記Ａ格子点または前記
Ｂ格子点の少なくとも一方の格子点を2元素以上のいず
れかで占める誘電体であり、前記誘電体における前記２
元素以上で占められる格子点を構成する元素の比が前記
２つの電極の少なくとも一方の電極の近くで前記誘電体
中央部と異なることを特徴とする。また、上記に加え
て、前記誘電体の組成が前記２つの電極の近くで前記誘
電体中央部と異なることを特徴とする。また、更に上記
のいずれかに加えて、前記酸化物誘電体がチタン酸ジル
コン酸鉛Ｐｂ（ＺｒxＴｉ1-x）Ｏ3であり、Ｚｒの組成
比ｘが前記電極近くで前記酸化物誘電体中央部より小さ
いことを特徴とする。また、更に上記のいずれかに加え
て、前記２つの電極の近くにおける前記誘電体の組成が
同じであることを特徴とする。According to the present invention, there is provided a dielectric element comprising:
A dielectric element having a structure in which an oxide dielectric having a perovskite crystal structure represented by the general formula ABO 3 is sandwiched between two electrodes, wherein at least one of the A lattice point or the B lattice point is A dielectric occupied by at least one of two or more elements;
The ratio of elements constituting lattice points occupied by elements or more is different from the central portion of the dielectric near at least one of the two electrodes. Further, in addition to the above, the composition of the dielectric is different from the central part of the dielectric near the two electrodes. Further, in addition to any of the above, the oxide dielectric is lead zirconate titanate Pb (Zr x Ti 1-x ) O 3 , and the composition ratio x of Zr is close to the electrode and the oxide dielectric is It is characterized by being smaller than the central part of the body. Further, in addition to any one of the above, the composition of the dielectric near the two electrodes is the same.
【手続補正４】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００６[Correction target item name] 0006
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００６】また、本発明における他の誘電体素子とし
ては、一般式ＡＢＯ3で表わされるペロブスカイト結晶
構造を有する酸化物誘電体が２つの電極によって挟まれ
た構造を有する誘電体素子であって、前記Ａ格子点また
は前記Ｂ格子点の少なくとも一方の格子点を2元素以上
のいずれかで占める誘電体であり、前記２つの電極の近
くの前記誘電体の組成が同一であり、且つ前記誘電体中
央部と異なることを特徴とする。もしくは、本発明にお
ける更に他の誘電体素子としては、一般式ＡＢＯ3で表
わされるペロブスカイト結晶構造を有する酸化物誘電体
が２つの電極によって挟まれた構造を有する誘電体素子
であって、前記Ａ格子点または前記Ｂ格子点の少なくと
も一方の格子点を2元素以上のいずれかで占める誘電体
であり、前記誘電体の組成が前記２つの電極の近くで前
記誘電体中央部と異なることを特徴とする。Another dielectric element according to the present invention is a dielectric element having a structure in which an oxide dielectric having a perovskite crystal structure represented by the general formula ABO 3 is sandwiched between two electrodes, A dielectric that occupies at least one of the A lattice points or the B lattice points with two or more elements, wherein the composition of the dielectric near the two electrodes is the same, and It is different from the central part. Alternatively, still another dielectric element according to the present invention is a dielectric element having a structure in which an oxide dielectric having a perovskite crystal structure represented by a general formula ABO 3 is sandwiched between two electrodes. A dielectric material occupying at least one of the lattice points of the lattice points or the B lattice points with two or more elements, wherein the composition of the dielectric material is different from the central part of the dielectric material near the two electrodes. And
【手続補正５】[Procedure amendment 5]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００７[Correction target item name] 0007
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００７】また、本発明における半導体記憶装置は、
上記のいずれかに記載の誘電体素子を用いた事を特徴と
する。Further, the semiconductor memory device according to the present invention comprises:
A dielectric element according to any one of the above is used.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 29/792 // Ｇ１１Ｃ 11/22 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 29/792 // G11C 11/22
Claims (3)
イト結晶構造を有する酸化物誘電体が２つの電極によっ
て挟まれた構造を有する誘電体素子に於て、前記Ａ、Ｂ
格子の少なくとも一方の格子を占める元素が２元素以上
の混晶であり、前記混晶の組成比が前記２つの電極の少
なくとも一方の電極の近くで前記誘電体中央部と異なる
ことを特徴とする誘電体素子。1. A dielectric element having a structure in which an oxide dielectric having a perovskite crystal structure represented by a general formula ABO 3 is sandwiched between two electrodes, wherein A, B
An element occupying at least one of the lattices is a mixed crystal of two or more elements, and a composition ratio of the mixed crystal is different from a central portion of the dielectric near at least one of the two electrodes. Dielectric element.
混晶組成比が前記２つの電極の近くで前記誘電体中央部
と異なることを特徴とする誘電体素子。2. The dielectric device according to claim 1, wherein the mixed crystal composition ratio is different from the central portion of the dielectric near the two electrodes.
ジルコン酸鉛Ｐｂ（ＺｒxＴｉ1-x）Ｏ3であり、Ｚｒの
組成比ｘが前記電極近くで前記誘電体中央部より大きい
ことを特徴とする誘電体素子。3. The dielectric according to claim 1, wherein the dielectric is lead zirconate titanate Pb (Zr x Ti 1-x ) O 3 , and the composition ratio x of Zr is near the electrode and is higher than the center of the dielectric. A dielectric element characterized by being large.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11162684A JP2000031399A (en) | 1999-06-09 | 1999-06-09 | Dielectric element and semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11162684A JP2000031399A (en) | 1999-06-09 | 1999-06-09 | Dielectric element and semiconductor storage device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14952592A Division JP3476845B2 (en) | 1992-06-09 | 1992-06-09 | Dielectric element and semiconductor storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000031399A true JP2000031399A (en) | 2000-01-28 |
Family
ID=15759341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11162684A Pending JP2000031399A (en) | 1999-06-09 | 1999-06-09 | Dielectric element and semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000031399A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6841817B2 (en) | 2001-11-01 | 2005-01-11 | Fujitsu Limited | Ferroelectric capacitor and a semiconductor device |
| US7026674B2 (en) | 2002-12-26 | 2006-04-11 | Nec Electronics Corporation | Semiconductor memory device and manufacturing method thereof |
-
1999
- 1999-06-09 JP JP11162684A patent/JP2000031399A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6841817B2 (en) | 2001-11-01 | 2005-01-11 | Fujitsu Limited | Ferroelectric capacitor and a semiconductor device |
| US7423308B2 (en) | 2001-11-01 | 2008-09-09 | Fujitsu Limited | Ferroelectric capacitor |
| US7026674B2 (en) | 2002-12-26 | 2006-04-11 | Nec Electronics Corporation | Semiconductor memory device and manufacturing method thereof |
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