JP2000003886A - Manufacture of semiconductor device and apparatus thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, in which the reliability of the semiconductor device is enhanced by preventing disconnection, film formation failure or the like, due to foreign particles or hydrogen gas in electroplating, and an apparatus thereof. SOLUTION: The required minimum amount of a plating solution 4 is fed onto a silicon substrate 1, whose surface to be plated is placed forcing upward. Electroplating is carried out by applying a voltage to a voltage feeding layer 3, while vibrating the silicon substrate 1 by an ultrasonic oscillator 6, and a metal film 5 is formed on insulating film 2. With this method, foreign particle contamination rate can be lowered, and film formation failure and disconnection due to foreign particles or hydrogen gas in the electroplating can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device for forming a metal film such as a copper or aluminum alloy on a silicon substrate of the semiconductor device by an electrolytic plating method and an apparatus for manufacturing the same. It is.

[0002]

2. Description of the Related Art Conventionally, in a metal film forming process by an electrolytic plating method in semiconductor manufacturing, a surface to be plated is directed downward in order to prevent foreign matter from adhering to a silicon substrate.
The plating solution is supplied from below.

A conventional process for forming a metal film on a semiconductor device by the electrolytic plating method will be described below.

FIG. 2 is an explanatory view of a conventional electrolytic plating method. In FIG. 1, reference numeral 1 denotes a silicon substrate, an insulating film 2 is formed in a predetermined shape on a surface to be plated of the silicon substrate 1, and a power supply film 3 is formed on the surface of the insulating film 2. During the plating process, a metal layer 5 is formed on the insulating film 2 by applying a potential to the power supply layer 3 and supplying a plating solution 4.

[0005]

However, in the conventional electrolytic plating method, in order to prevent foreign substances from adhering to the silicon substrate 1, the plating solution 4 is supplied from below with the surface to be plated facing downward. ing. Then, the plating solution 4 is supplied in a larger amount than the required amount so that the required amount of the plating solution 4 is securely attached to the surface to be plated. For this reason, foreign matter contained in the atmosphere at the time of supply may be mixed into the plating solution. There is.
The inclusion of the foreign matter is a problem when reusing the already supplied plating solution.

Further, hydrogen gas generated during the plating process accumulates in the recessed portion of the insulating film 2 with the surface to be plated facing downward, which causes poor plating film formation or disconnection. However, there is a problem that a defect occurs.

An object of the present invention is to solve the above-mentioned conventional problems and to provide a method of manufacturing a semiconductor device and a manufacturing apparatus thereof, which can prevent film formation failure and disconnection due to hydrogen gas. And

[0008]

In order to achieve the above object, a method and an apparatus for manufacturing a semiconductor device according to the present invention are directed to a method of manufacturing a semiconductor device, comprising: Then, in this state, electrolytic plating is performed while applying vibration to the silicon substrate by an ultrasonic oscillator.

According to the method and the apparatus, by supplying the minimum necessary plating solution with the surface to be plated facing upward, it is possible to reduce the proportion of foreign matter mixed into the plating solution. By applying high-frequency, low-amplitude vibrations to the silicon substrate using an ultrasonic oscillator, it becomes possible to reliably remove foreign substances and hydrogen gas generated during film formation.

[0010]

DETAILED DESCRIPTION OF THE INVENTION The invention according to claim 1 of the present invention is directed to a method of manufacturing a semiconductor device in which a metal film is formed on a silicon substrate by electrolytic plating, with the surface to be plated of the silicon substrate facing upward. The metal film is formed by supplying a plating solution onto the surface to be plated and applying a potential for plating to the power supply layer on the surface to be plated while vibrating the silicon substrate in this state. By this method, the plating liquid is supplied with the surface to be plated of the silicon substrate facing upward, and compared to the conventional method of supplying the plating liquid from below to the surface to be plated, the plating surface is required for plating. The minimum necessary plating solution can be supplied, so that the rate of contamination of the plating solution can be reduced, and the contamination of the plating solution to be reused can be suppressed. Can. In addition, since the plating film is formed while applying vibration to the silicon substrate, it is possible to remove foreign gas and hydrogen gas generated during plating.

According to a second aspect of the present invention, in a semiconductor device manufacturing apparatus for forming a metal film on a silicon substrate by electrolytic plating, a holding means for holding the silicon substrate with a surface to be plated facing upward, A vibrating means for vibrating the plating solution on the surface to be plated of the silicon substrate held by the holding means, and plating the power supply layer on the surface to be plated in a state vibrated by the vibrating means; Means for applying a potential to the apparatus, and the apparatus can reliably realize the method.

According to a third aspect of the present invention, in the second aspect of the present invention, the vibrating means comprises an ultrasonic oscillator. With this configuration, a high-frequency, low-amplitude ultrasonic oscillator is provided. Since the vibration can be applied to the silicon substrate, it is possible to reliably remove foreign gas and hydrogen gas generated during plating.

Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.

FIG. 1 is an explanatory diagram showing a schematic configuration of a semiconductor device manufacturing apparatus for explaining an embodiment of the present invention. In the same figure, members corresponding to the members described in FIG.
1 is a silicon substrate, 2 is an insulating film, 3 is a power supply layer, 4 is a plating solution, 5 is a metal film formed by an electrolytic plating method, 6 is an ultrasonic oscillator as a vibration means, and 7 is a silicon substrate 1 Is a holding frame body capable of holding the plating solution 4 with the surface to be plated (film formation surface) facing upward.

With the above structure, a minimum amount of plating solution 4 required for electrolytic plating is supplied to the silicon substrate 1 placed on the holding frame 7 with the surface to be plated facing upward. The metal film 5 is formed on the insulating film 2 by applying an electric potential from a power source (not shown) to the power supply layer 3 while vibrating 1 at high frequency and low amplitude by the ultrasonic oscillator 6. Film.

By supplying the plating solution 4 with the surface to be plated of the silicon substrate 1 facing upward as described above, compared with the conventional method of supplying the plating solution from below to the surface to be plated, the plating solution is supplied. Since the minimum necessary plating solution 4 required for electrolytic plating can be supplied to the surface, the plating solution 4
In this case, the rate of foreign matter mixing in the plating solution can be reduced, and foreign matter mixing into the plating solution 4 to be reused can be suppressed. Moreover, since the plating film is formed while applying vibration to the silicon substrate 1, it is possible to remove the adhesion of foreign matter and the hydrogen gas generated during electrolytic plating, thereby preventing film formation failure and disconnection due to foreign matter and hydrogen gas. be able to.

[0017]

As described above, according to the present invention, the electroplating is performed by turning the surface of the silicon substrate to be plated upward and applying vibration with an ultrasonic oscillator with a minimum necessary amount of plating solution. Can be reused in a good condition, film formation failure or disconnection failure can be prevented, and the reliability of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing a schematic configuration in a semiconductor device manufacturing apparatus for explaining an embodiment of the present invention;

FIG. 2 is an explanatory view of a conventional electrolytic plating method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Insulating film 3 Power supply layer 4 Plating solution 5 Metal layer 6 Ultrasonic oscillator 7 Holding frame

Claims (3)

[Claims] 1. A method for manufacturing a semiconductor device, wherein a metal film is formed on a silicon substrate by electrolytic plating.
The plating liquid is supplied onto the surface to be plated with the surface to be plated of the silicon substrate facing upward, and while the silicon substrate is vibrated in this state, the potential for plating is applied to the power supply layer on the surface to be plated by plating. A method for manufacturing a semiconductor device, comprising forming a metal film. 2. A semiconductor device manufacturing apparatus for forming a metal film on a silicon substrate by an electrolytic plating method,
Holding means for holding the silicon substrate with the surface to be plated facing upward, vibration means for vibrating the silicon substrate held by the holding means while plating liquid is supplied to the surface to be plated, and vibration means Means for applying a potential for plating the power supply layer on the surface to be plated in a state where the substrate is vibrated by the semiconductor device manufacturing apparatus. 3. The semiconductor device manufacturing apparatus according to claim 2, wherein said vibrating means comprises an ultrasonic oscillator.