JP2000077583A - Package for electronic component and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for electronic component in which adhesion between a heat dissipating metal plate and a heat dissipating fin is enhanced, and thermal resistance between a semiconductor element and the heat dissipating fin is reduced. SOLUTION: Copper plating films 12, 13 are formed on the opposite sides of a copper-molybdenum plate 11 of a heat dissipating metal plate 10. A package body 20 is bonded to the upper surface of the heat dissipating metal plate 10, while surrounding the entire circumference of a semiconductor element mounting part 31. A polished face 61 is formed on the lower surface of the heat dissipating metal plate 10. Adhesion between the heat dissipating metal plate 10 and a heat dissipating fin 60 is enhanced by fixing a heat dissipating fin 60 to the polished face 61. According to this structure, heat resistance between a semiconductor element 30 and the heat dissipating fin 60 can be decreased, when the semiconductor element 30 is mounted on the semiconductor element mounting part 31. Consequently, heat is dissipated satisfactorily to the outside during operation of the semiconductor element 30 and the semiconductor element 30 can be operated normally and stably over a long term.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for electronic components and a method for manufacturing the same.

[0002]

2. Description of the Related Art In semiconductor devices, Si chips and Ga
Electronic components such as a semiconductor element such as an As chip and a chip capacitor are mounted on an electronic component mounting portion provided in an electronic component package and are put to practical use. Ceramics such as alumina are excellent in heat resistance, durability, thermal conductivity, etc.
It is suitable as a material for the main body of the electronic component package, and ceramic electronic component packages are currently in active use.

[0003] In order to reduce the package size, increase the mounting density on a mounting board, and improve the electrical characteristics of the ceramic electronic component package, a plurality of green sheets are generally laminated and fired to insulate. A ceramic package body as a frame member is manufactured.

Further, in the case of a semiconductor module such as a power module which generates a large amount of heat from a semiconductor element, the semiconductor device may not operate normally due to heat generation if only the semiconductor element is mounted by a normal method. Therefore, as a package for an electronic component that satisfactorily dissipates heat generated during operation of a semiconductor element into the atmosphere, for example, a ceramic package having a heat-dissipating metal plate made of a metal having excellent heat conductivity is known. I have. Further, as a countermeasure for suppressing the temperature rise of the semiconductor element, a method of attaching a heat radiating fin to a heat radiating metal plate and removing heat of the semiconductor element by natural air cooling or forced air cooling by a fan is most widely adopted.

[0005]

The technology for forming a heat-dissipating metal plate used in a ceramic package according to the prior art described above is, for example, such that the coefficient of thermal expansion is close to the coefficient of thermal expansion of the ceramic package body and the coefficient of thermal conductivity is low. About 200W
A composite material having a material of about / mK and comprising a porous sintered body of tungsten or molybdenum impregnated with molten copper is known.

Aluminum or an aluminum alloy is generally used as a heat dissipating fin because of its light weight and economy, and copper or a copper alloy is used because of its good thermal conductivity. In some cases.

However, when the ceramic package body is joined to the upper surface of the heat-dissipating metal plate by brazing using a brazing material such as silver brazing, a difference in the coefficient of thermal expansion between the heat-dissipating metal plate and the ceramic package body is caused. Thermal stress may occur, and the brazing strength between the metal plate for heat dissipation and the ceramic package body may be reduced. further,
When the heat dissipating metal plate is warped and the heat dissipating fins are attached to the lower surface of the heat dissipating metal plate, the degree of adhesion between the heat dissipating metal plate and the heat dissipating fins is reduced. There is a problem that the thermal resistance between them increases.

When the thermal resistance between the semiconductor element and the heat radiating fins increases, it is difficult to completely dissipate the heat generated during operation of the semiconductor element to the outside via the heat radiating metal plate and the heat radiating fins. . Therefore, there has been a problem that a semiconductor element becomes high in temperature due to heat generated during operation of the semiconductor element, and the semiconductor element is physically destroyed or a characteristic of the semiconductor element undergoes a thermal change, thereby causing a malfunction of the semiconductor element. .

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and has improved the degree of adhesion between a heat dissipating metal plate and a heat dissipating fin, thereby improving the thermal resistance between the semiconductor element and the heat dissipating fin. It is an object of the present invention to provide an electronic component package that reduces the number of electronic components.

[0010]

According to the electronic component package of the present invention, since the polished surface for attaching the heat radiating fin is formed on the lower surface of the heat radiating metal plate, the heat radiating metal is formed. When the insulating frame member is joined to the upper surface of the board,
Thermal stress due to the difference in the coefficient of thermal expansion between the heat-dissipating metal plate and the insulating frame member occurs, and even if the heat-dissipating metal plate warps, by attaching the heat-dissipating fins to the above-mentioned polished surface, The degree of adhesion between the heat dissipating metal plate and the heat dissipating fins is improved. Therefore, the thermal resistance between the semiconductor element and the heat dissipation fin can be easily reduced. Therefore, the heat generated during the operation of the semiconductor element can be satisfactorily radiated to the outside, and the semiconductor element can be normally and stably operated for a long time.

Here, the warpage of the end of the metal plate for heat radiation is defined as a concave warpage when the end of the metal plate for heat radiation is warped upward, and the value of the warp is expressed as a positive value. When the value of the warpage is represented by a numerical value of − as the warpage, the warpage of the polished surface is 0 to
It is preferably in the range of +10 μm.

When the warpage of the polished surface exceeds +10 μm, a gap is formed between the radiating metal plate and the radiating fin when the radiating fin is mounted on the polished surface, and the radiating metal plate and the radiating fin are not bonded to each other. Of the semiconductor device and the heat dissipation fin may be increased.

If the warpage of the polished surface is less than 0 μm, that is, a value of −, the radiating fin is fixed to the radiating metal plate using a dedicated member such as a screw or a clip. When the fins are attached, a gap is formed between the heat-dissipating metal plate and the heat-dissipating fin, substantially at the center of the heat-dissipating metal plate, that is, a portion directly below the semiconductor element. There is a possibility that the degree of adhesion is reduced and the thermal resistance between the semiconductor element and the heat dissipation fin is increased.

According to the electronic component package according to the second aspect of the present invention or the method for manufacturing an electronic component package according to the fourth aspect, the metal plate for heat radiation is selected from molybdenum, copper-molybdenum, and copper-tungsten. A metal plate made of any metal material, and a copper plating film formed on one or both surfaces of the metal plate, a copper sprayed film, or a copper film selected from a printed and fired copper film, or a metal plate And a copper plate joined by brazing to one or both surfaces of the copper plate. For this reason, molybdenum having an appropriate coefficient of thermal expansion,
By using a metal plate made of any metal material selected from copper-molybdenum and copper-tungsten, a heat-dissipating metal plate having an appropriate coefficient of thermal expansion and a high thermal conductivity can be obtained.

Forming a copper film selected from a copper plating film, a copper sprayed film, and a printed and baked copper film on a metal plate;
Or by joining a copper plate by brazing to a metal plate,
Compared to the one in which the copper plate is integrally joined to the metal plate by rolling, the thickness of the metal plate and copper film does not vary,
The heat-dissipating metal plate has a predetermined uniform thickness. Therefore, since the coefficient of thermal expansion of the heat dissipating metal plate does not partially differ, for example, the heat dissipating metal plate and the insulating frame member such as ceramics are brazed using a brazing material such as silver brazing, and When the semiconductor element is mounted on the plate, the deformation of the metal plate for heat radiation is small, the metal plate for heat radiation and the insulator can be firmly joined, and the semiconductor element is firmly fixed on the metal plate for heat radiation. Can be.

A heat-dissipating metal plate formed by forming a copper film on both surfaces of a metal plate or joining a copper plate to both surfaces of the metal plate by brazing is a method of forming a heat-dissipating metal plate between a metal plate and a copper film or between a metal plate and a copper plate. Since the thermal stress generated due to the difference in thermal expansion between the two is canceled out on both surfaces of the metal plate, the metal plate for heat radiation can always be made flat. Therefore, when the semiconductor element is mounted on the metal plate for heat radiation, the semiconductor element can be firmly fixed on the metal plate for heat radiation.

When the semiconductor element is mounted on the metal plate for heat radiation, the thermal conductivity of the metal plate for heat radiation is the value of the upper layer of the metal plate for heat radiation directly below the semiconductor element than the value of the whole metal plate for heat radiation. Is important, a copper film may be formed on only one surface of the metal plate corresponding to the portion directly below the semiconductor element, or the copper plate may be joined to only one surface of the metal plate by brazing. The copper plating method, thermal spraying method, or printing method can be performed by a known method, and is not particularly limited.

According to the method of manufacturing an electronic component package according to the third aspect of the present invention, the lower surface of the heat-dissipating metal plate is polished after the insulating frame member is joined to the upper surface of the heat-dissipative metal plate. When the plate and the insulating frame member are joined together, thermal stress is generated due to the difference in the coefficient of thermal expansion between the heat radiating metal plate and the insulating frame member. By attaching the heat radiating fins to the polished surface of the metal plate, the degree of adhesion between the heat radiating metal plate and the heat radiating fins is improved. Therefore, the thermal resistance between the semiconductor element and the heat dissipation fin can be easily reduced. Therefore, the heat generated during the operation of the semiconductor element can be satisfactorily radiated to the outside, and the semiconductor element can be normally and stably operated for a long time.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a plurality of embodiments of the present invention will be described with reference to the drawings. First Embodiment FIG. 1 shows a first embodiment in which the present invention is applied to a surface mount type semiconductor package made of ceramics.
This will be described with reference to FIG.

As shown in FIG. 1, a semiconductor package 100 made of ceramics includes a metal plate 10 for heat radiation, a package body 20 made of alumina, a lead frame 50 and the like.

The heat dissipating metal plate 10 has a semiconductor element mounting portion 31 on which the semiconductor element 30 is mounted and fixed on the upper surface thereof.
It is mounted and fixed using an adhesive such as glass, resin, or brazing material.

A polishing surface 61 is formed on the lower surface of the metal plate 10 for heat radiation, and a fin 60 for heat radiation is attached to the polishing surface 61. In addition, a plurality of notches 71 for fixing the heat dissipating fins 60 using screws 70 are formed at the end of the heat dissipating metal plate 10. Heat radiation fins 6
Numeral 0 is fixed to the heat-dissipating metal plate 10 by screws 70, and the heat-dissipating metal plate mounting surface 62 of the heat-dissipating fins 60 and the polishing surface 61 of the heat-dissipating metal plate 10 are in close contact with each other.

The heat-dissipating metal plate 10 has copper plating films 12 and 13 on both upper and lower surfaces of a copper-molybdenum plate 11 as a metal plate made of a metal material in which a porous sintered body of molybdenum is impregnated with 40% of molten copper. It is a formed configuration. The polished surface 61 is formed on the lower surface of the copper plating film 13 on the lower surface side.

On the upper surface of the metal plate 10 for heat radiation, a package body 20 made of alumina as a frame-shaped insulating frame member is made of a solder such as silver solder so as to surround the entire periphery of the semiconductor element mounting portion 31. The members 15 are joined together. A space for mounting the semiconductor element 30 is formed by the metal plate 10 for heat dissipation and the package body 20. This space is hermetically sealed by joining a lid or the like (not shown) to the upper surface 21 of the package body 20 with a sealing material such as solder, low-melting glass, resin, or brazing material.

The package body 20 has a bonding pattern 23 made of tungsten, molybdenum, or the like that is bonded to the metal plate 10 for heat dissipation via the brazing material 15 on the lower surface 22. And the like. Joining pattern 2
3 and the surface of the wiring pattern 24 are plated with nickel, gold, or the like. One end of the wiring pattern 24 is electrically connected to the electrode portion of the semiconductor element 30 via the bonding wire 40, and the other end of the conductor wiring layer 24 is connected to an external electric circuit such as a printed circuit board.
0 is electrically connected.

Next, a method for manufacturing a heat-dissipating metal plate before forming a polished surface will be described. (1) As shown in FIG. 2, copper plating films 12 and 1 are formed on the upper and lower surfaces of a copper-molybdenum plate 11 by an electrolytic plating method using a plating solution containing copper sulfate, copper nitrate or the like as a main component.
By forming 30, the heat-dissipating metal plate 90 before forming the polished surface is obtained. At this time, a polished surface has not yet been formed on the lower surface of the copper plating film 130 on the lower surface side.

Next, a method of manufacturing the package body 20 will be described.

(2) Magnesia, silica,
To a powder obtained by adding a small amount of a sintering aid such as calcined talc or calcium carbonate and a coloring agent such as titanium oxide, chromium oxide or molybdenum oxide, to a plasticizer such as dioxyl phthalate, or a binder such as an acrylic resin or butyral resin. And toluene,
A solvent such as xylene and alcohol is added and sufficiently kneaded to produce a slurry having a viscosity of 2000 to 40000 cps.
A plurality of 0.3 mm-thick alumina green sheets are formed by a doctor blade method, for example.

(3) Each green sheet is processed into a desired shape using a punching die, a punching machine, or the like, and a plurality of via holes are punched to form a conductor using tungsten powder, molybdenum powder, or the like in each via hole. The vias are filled to form vias. An inner layer pattern is formed on the green sheet corresponding to the inner layer of the package body using the same conductive paste as the via. A conductor pattern is screen-printed on the green sheet corresponding to the front and back layers of the package body using the same conductor paste as the via.

(4) A green sheet corresponding to an inner layer having a via and an inner layer pattern formed thereon and a green sheet corresponding to a surface layer on which a conductor pattern is screen-printed are laminated.
This green sheet laminate is heated to, for example,
It is integrated by thermocompression bonding under the condition of 0 to 250 kg / cm ² .

(5) The integrated green sheet laminate is fired at 1500 to 1600 ° C. in a nitrogen-hydrogen mixed gas atmosphere. As a result, the resin component in the conductive paste is decomposed and eliminated, a wiring pattern is formed on the surface of the package body made of alumina, and a bonding pattern is formed on the back surface. (6) The electrode portion and the bonding pattern of the formed wiring pattern are plated with nickel, gold, or the like to obtain the package body 20 shown in FIG.

(7) Next, the heat dissipating metal plate 90 before the formation of the polished surface manufactured in the step (1) and the package body 20 manufactured in the steps (2) to (6) are combined. It is joined using a brazing material such as silver brazing. At this time, a thermal stress is generated due to a difference in the coefficient of thermal expansion between the heat dissipating metal plate 90 before the formation of the polished surface and the package body 20. For example, as shown in FIG. 90 ends warp vertically downwards,
So-called convex warpage may occur. In FIG. 4,
Heat dissipating metal plate 90 and package body 20 before polished surface formation
The warpage is exaggerated in consideration of the easy understanding of the warpage that occurs in the heat-dissipating metal plate 90 before the formation of the polished surface when these are joined. Although not shown, when the metal plate for heat radiation and the package body are joined, a so-called concave warp may occur in which the end of the metal plate for heat radiation warps vertically upward.

(8) After bonding the package body 20 to the upper surface of the heat-dissipating metal plate 90 before the formation of the polished surface, the lower surface of the heat-dissipation metal plate 90 before the formation of the warped polished surface, that is, the copper The lower surface of the plating film 130 is polished with, for example, # 1000 emery paper to obtain the radiated metal plate 10 for polishing shown in FIG. A polished surface 61 is formed on the lower surface of the heat-dissipating metal plate 10 thus produced, that is, on the lower surface of the copper plating film 13 on the lower surface side. Then, after polishing, the metal part is plated with nickel, gold, or the like for cleaning and corrosion prevention.

(9) The lead frame is electrically connected to the electrode part of the wiring pattern, the semiconductor element is mounted on the semiconductor element mounting part of the semiconductor package, and the electrode part of the semiconductor element and the electrode part of the wiring pattern are connected by wires. They are electrically connected by bonding. Then, after the semiconductor element mounting portion is hermetically sealed with a lid or the like, the radiating fins 60 are attached to the polished surface 61 of the radiating metal plate 10 as shown in FIG. Then, the radiating fins 60 are fixed to the radiating metal plate 10 using the screws 70.

Next, Table 1 shows the results of measuring the warpage of the polished surface 61 of the heat-dissipating metal plate 10 shown in FIG. 5 and the thermal resistance of the ceramic semiconductor package 100 shown in FIG. In addition, the lower surface of the heat-dissipating metal plate 90 before the formation of the polished surface shown in FIG. 4 is warped, and the heat-dissipation metal plate 90 before the formation of the polished surface and the package body 20 are used in the same process as the above (9). Table 1 shows the results of Comparative Example 1 in which the thermal resistance of the manufactured ceramic semiconductor package was measured. In addition, the values of the warpage shown in Table 1 are all a heat-dissipating metal plate having a dimension of length × width × thickness = 24 mm × 17 mm × 2.0 mm, and length × width × thickness = 10 mm × 10 mm ×
This is the result of measuring the warpage in the longitudinal direction using a package body having a dimension of 1.0 mm. A value of + means concave warpage of the metal plate for heat dissipation, and a value of-means convex warpage of the metal plate for heat dissipation. I do. Further, the values of the thermal resistance shown in Table 1 are the results of measuring the thermal resistance between the upper surface A of the semiconductor element 30 and the lower surface B of the heat radiation fin 60, for example, shown in FIG.

[0036]

[Table 1] As shown in Table 1, in Comparative Example 1, the warpage was -11.
μm, and the thermal resistance is 2.28 ° C./W. For this reason, when the heat dissipating fins are attached to the lower surface of the heat dissipating metal plate 90 before the polishing surface is formed, the heat dissipating metal plate 90 before the polishing surface is formed.
The degree of adhesion between the semiconductor device and the heat radiating fins is reduced, and as a result, the thermal resistance between the semiconductor element and the heat radiating fins is increased. For this reason, it is difficult to completely dissipate the heat generated during the operation of the semiconductor element to the outside via the heat dissipating metal plate 90 and the heat dissipating fins before the formation of the polished surface. Therefore, the temperature of the semiconductor element becomes high due to the heat generated during the operation of the semiconductor element, and the semiconductor element may be physically damaged, or the characteristics of the semiconductor element may change in heat, and the semiconductor element may malfunction.

On the other hand, in the first embodiment, as shown in Table 1, the warpage is +2 μm and the thermal resistance is 1.90 ° C. /
W. Therefore, as shown in FIG. 1, by attaching the heat dissipating fins 60 to the polishing surface 61 of the heat dissipating metal plate 10, the degree of adhesion between the heat dissipating metal plate 10 and the heat dissipating fins 60 is improved. Therefore, even when the semiconductor element 30 is placed and fixed on the semiconductor element mounting portion 31, the thermal resistance between the semiconductor element 30 and the heat radiation fins 60 can be easily reduced. Therefore, heat generated when the semiconductor element 30 is operated can be satisfactorily radiated to the outside, and the semiconductor element 30 can be normally and stably operated for a long time.

Further, in the first embodiment, since the warp of the polished surface 61 of the metal plate 10 for heat radiation is in the range of 0 to +10 μm, the fins 60 for heat radiation are fixed to the metal plate for heat radiation by screws 70. It is possible to prevent a gap from being formed between the heat dissipating metal plate 10 and the heat dissipating fin 60 corresponding to a substantially central portion of the heat dissipating metal plate 10, that is, a portion directly below the semiconductor element 30. Therefore, the degree of adhesion between the heat dissipating metal plate 10 and the heat dissipating fins 60 is further improved,
The thermal resistance between the semiconductor element 30 and the heat radiating fins 60 can be further reduced.

(Second Embodiment) A second embodiment of the present invention will be described. In the second embodiment, a copper-molybdenum plate made of a metal material in which a porous sintered body of molybdenum is impregnated with 35% of molten copper is used instead of the metal plate 11 of the first embodiment shown in FIG. In other respects, the configuration is the same as that of the first embodiment, and the description of the configuration and the manufacturing method is omitted.

Table 1 shows the results of measuring the warpage of the polished surface of the heat-dissipating metal plate and the thermal resistance of the ceramic semiconductor package in the second embodiment. Also, the second
In Comparative Example 2 using the heat-dissipating metal plate before the formation of the polished surface in the example, the lower surface of the heat-dissipation metal plate before the formation of the polished surface was warped, and the thermal resistance of the ceramic semiconductor package using the same was measured. Table 1 shows the results.

In Comparative Example 2, as shown in Table 1,
The warpage is −20 μm, and the thermal resistance is 2.73 ° C./W. Therefore, when the heat dissipating fins are attached to the lower surface of the heat dissipating metal plate before the polishing surface is formed, the degree of adhesion between the heat dissipating metal plate and the heat dissipating fins before the polishing surface is formed is reduced. The thermal resistance between the heat radiation fins is increasing.
For this reason, it is difficult to completely dissipate the heat generated during the operation of the semiconductor element to the outside via the heat dissipating metal plate and the heat dissipating fins before the formation of the polished surface. Therefore, the temperature of the semiconductor element becomes high due to the heat generated during the operation of the semiconductor element,
There is a possibility that the semiconductor element is physically destroyed, or a characteristic of the semiconductor element undergoes a thermal change, causing a malfunction of the semiconductor element.

On the other hand, in the second embodiment, as shown in Table 1, the warpage is +3 μm and the thermal resistance is 2.03 ° C. /
W. For this reason, by attaching the heat dissipating fin to the polished surface of the heat dissipating metal plate, the degree of adhesion between the heat dissipating metal plate and the heat dissipating fin is improved. For this reason, even if the semiconductor element is mounted and fixed on the semiconductor element mounting portion, the thermal resistance between the semiconductor element and the heat dissipation fins can be easily reduced. Therefore, the heat generated during the operation of the semiconductor element can be satisfactorily radiated to the outside, and the semiconductor element can be normally and stably operated for a long time.

In the first and second embodiments described above, the heat-dissipating metal plate has a structure in which the copper plating films are formed on the upper and lower surfaces of the copper-molybdenum plate. A copper plating film may be formed on both upper and lower surfaces of a copper-tungsten plate, or a molybdenum plate, a copper-molybdenum plate or a copper-sprayed film or a copper printing and firing film film may be formed on both upper and lower surfaces of a copper-tungsten plate. It is good also as a structure which performs. Further, in the present invention, when the semiconductor element is mounted and fixed on the heat-dissipating metal plate, a copper plating film, a copper sprayed film or a printed sintering film is formed only on one surface of the metal plate corresponding to a portion directly below the semiconductor element. May be.

(Third Embodiment) A third embodiment of the present invention will be described. In the third embodiment, a copper plate joined by brazing with silver solder or the like is used instead of the copper plating films 12 and 13 of the first embodiment shown in FIG. Since the configuration is the same as described above, the description of the configuration and the manufacturing method is omitted.

Table 1 shows the results of measuring the warpage of the polished surface of the heat-dissipating metal plate and the thermal resistance of the ceramic semiconductor package for the third embodiment. Also, the third
In Comparative Example 3 using the heat-dissipating metal plate before forming the polished surface in Example, the lower surface of the heat-dissipating metal plate before the polishing surface was formed, and the thermal resistance of the ceramic semiconductor package using the same was measured. Table 1 shows the results.

In Comparative Example 3, as shown in Table 1,
The warpage is −22 μm, and the thermal resistance is 2.86 ° C./W. Therefore, when the heat dissipating fins are attached to the lower surface of the heat dissipating metal plate before the polishing surface is formed, the degree of adhesion between the heat dissipating metal plate and the heat dissipating fins before the polishing surface is formed is reduced. The thermal resistance between the heat radiation fins is increasing.
For this reason, it is difficult to completely dissipate the heat generated during the operation of the semiconductor element to the outside via the heat dissipating metal plate and the heat dissipating fins before the formation of the polished surface. Therefore, the temperature of the semiconductor element becomes high due to the heat generated during the operation of the semiconductor element,
There is a possibility that the semiconductor element is physically destroyed, or a characteristic of the semiconductor element undergoes a thermal change, causing a malfunction of the semiconductor element.

On the other hand, in the third embodiment, as shown in Table 1, the warpage is +3 μm and the thermal resistance is 2.11 ° C. /
W. For this reason, by attaching the heat dissipating fin to the polished surface of the heat dissipating metal plate, the degree of adhesion between the heat dissipating metal plate and the heat dissipating fin is improved. For this reason, even if the semiconductor element is mounted and fixed on the semiconductor element mounting portion, the thermal resistance between the semiconductor element and the heat dissipation fins can be easily reduced. Therefore, the heat generated during the operation of the semiconductor element can be satisfactorily radiated to the outside, and the semiconductor element can be normally and stably operated for a long time.

In the third embodiment, the metal plate for heat dissipation is
Although the copper plate is joined to both surfaces of the metal plate by brazing, in the present invention, when the semiconductor element is placed and fixed on the heat-dissipating metal plate, only the one side of the metal plate corresponding to the portion immediately below the semiconductor element is fixed. The copper plates may be joined by brazing.

In the plurality of embodiments of the present invention described above, since the polished surface for attaching the heat radiating fins is formed on the lower surface of the heat radiating metal plate, the package body is joined to the upper surface of the heat radiating metal plate. In this case, thermal stress occurs due to the difference in the coefficient of thermal expansion between the heat-dissipating metal plate and the package body, and even if the heat-dissipating metal plate is warped, the heat-dissipating fins By attaching the fin, the degree of adhesion between the radiating metal plate and the radiating fin is improved. Therefore, the thermal resistance between the semiconductor element and the heat dissipation fin can be easily reduced. Therefore, the heat generated during the operation of the semiconductor element can be satisfactorily radiated to the outside, and the semiconductor element can be normally and stably operated for a long time.

Further, in the above-described embodiments, the heat-dissipating metal plate includes a metal plate made of any metal material selected from molybdenum, copper-molybdenum, and copper-tungsten, and one or both surfaces of the metal plate. A copper film selected from a copper plating film, a copper sprayed film, and a printed and baked copper film, or a copper plate joined to one or both surfaces of a metal plate by brazing. Therefore, by using a metal plate made of any metal material selected from molybdenum, copper-molybdenum, and copper-tungsten having an appropriate coefficient of thermal expansion, heat radiation having an appropriate coefficient of thermal expansion and a high thermal conductivity is provided. Metal plate can be obtained.

In the above embodiments, the present invention is applied to a surface-mount type semiconductor package.
The present invention may be applied to a package of an insertion type such as an in Grid Array) or another type.

The present invention is applicable not only to electronic component packages made of alumina but also to various electronic component packages made of ceramics such as aluminum nitride, mullite, and low temperature fired glass ceramics.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor package according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a heat-dissipating metal plate before a polished surface is formed according to a first embodiment of the present invention.

FIG. 3 is a sectional view illustrating a package body according to a first embodiment of the present invention;

FIG. 4 is a cross-sectional view showing a state in which a heat-dissipating metal plate and a package body are joined before a polished surface is formed according to a first embodiment of the present invention.

FIG. 5 is a cross-sectional view illustrating a heat-dissipating metal plate and a package body after polishing according to the first embodiment of the present invention.

[Explanation of symbols]

REFERENCE SIGNS LIST 10 Heat-dissipating metal plate 11 Copper-molybdenum plate (metal plate) 12, 13 Copper plating film 15 Brazing material 20 Package body (insulating frame member) 30 Semiconductor device (electronic component) 31 Semiconductor device mounting portion (electronic component mounting portion) Reference Signs List 60 heat radiation fin 61 polished surface 100 semiconductor package (electronic component package)

Claims (4)

[Claims] 1. A heat-dissipating metal plate having an electronic component mounting portion for mounting an electronic component on an upper surface, and a space which is joined to the upper surface of the heat-dissipating metal plate and accommodates the electronic component on an inner side. An electronic component package, comprising: an insulating frame member; and a polished surface formed on a lower surface of the metal plate for heat radiation and for attaching a fin for heat radiation. 2. The heat-dissipating metal plate is made of molybdenum, copper-
Molybdenum, a metal plate made of any metal material selected from copper-tungsten, and one selected from a copper plating film formed on one or both surfaces of the metal plate, a copper sprayed film, and a printed printing film of copper 2. The electronic component package according to claim 1, further comprising a copper film, or a copper plate joined to one or both surfaces of the metal plate by brazing. 3. A heat dissipating metal plate having an electronic component mounting portion for mounting an electronic component on an upper surface, and a space inside the heat dissipating metal plate joined to the upper surface of the heat dissipating metal plate for accommodating the electronic component. A method for manufacturing an electronic component package comprising an insulating frame member, comprising: after joining the heat dissipating metal plate and the insulating frame member, polishing the lower surface of the heat dissipating metal plate. Manufacturing method for component package. 4. The heat-dissipating metal plate is made of molybdenum, copper-
Molybdenum, a metal plate made of any metal material selected from copper-tungsten, and one selected from a copper plating film formed on one or both surfaces of the metal plate, a copper sprayed film, and a printed printing film of copper 4. The method for manufacturing an electronic component package according to claim 3, further comprising a copper film, or a copper plate joined to one or both surfaces of the metal plate by brazing.