ITMI20041904A1 - "metodo e sistema per un approccio di programmazione per un dispositivo elettronico non volatile" - Google Patents
"metodo e sistema per un approccio di programmazione per un dispositivo elettronico non volatile"Info
- Publication number
- ITMI20041904A1 ITMI20041904A1 IT001904A ITMI20041904A ITMI20041904A1 IT MI20041904 A1 ITMI20041904 A1 IT MI20041904A1 IT 001904 A IT001904 A IT 001904A IT MI20041904 A ITMI20041904 A IT MI20041904A IT MI20041904 A1 ITMI20041904 A1 IT MI20041904A1
- Authority
- IT
- Italy
- Prior art keywords
- electronic device
- volatile electronic
- programming approach
- programming
- approach
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT001904A ITMI20041904A1 (it) | 2004-10-07 | 2004-10-07 | "metodo e sistema per un approccio di programmazione per un dispositivo elettronico non volatile" |
| US11/128,939 US7345921B2 (en) | 2004-10-07 | 2005-05-12 | Method and system for a programming approach for a nonvolatile electronic device |
| PCT/US2005/035296 WO2006041730A2 (en) | 2004-10-07 | 2005-09-30 | Method and system for a programming approach for a nonvolatile electronic device |
| TW094134458A TWI299868B (en) | 2004-10-07 | 2005-10-03 | Method and system for a programming approach for a nonvolatile electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT001904A ITMI20041904A1 (it) | 2004-10-07 | 2004-10-07 | "metodo e sistema per un approccio di programmazione per un dispositivo elettronico non volatile" |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITMI20041904A1 true ITMI20041904A1 (it) | 2005-01-07 |
Family
ID=36145062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT001904A ITMI20041904A1 (it) | 2004-10-07 | 2004-10-07 | "metodo e sistema per un approccio di programmazione per un dispositivo elettronico non volatile" |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7345921B2 (it) |
| IT (1) | ITMI20041904A1 (it) |
| TW (1) | TWI299868B (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8173981B2 (en) * | 2006-05-12 | 2012-05-08 | Brookhaven Science Associates, Llc | Gantry for medical particle therapy facility |
| US7414891B2 (en) | 2007-01-04 | 2008-08-19 | Atmel Corporation | Erase verify method for NAND-type flash memories |
| US7882405B2 (en) * | 2007-02-16 | 2011-02-01 | Atmel Corporation | Embedded architecture with serial interface for testing flash memories |
| US20080232169A1 (en) * | 2007-03-20 | 2008-09-25 | Atmel Corporation | Nand-like memory array employing high-density nor-like memory devices |
| US7839690B2 (en) * | 2008-12-11 | 2010-11-23 | Sandisk Corporation | Adaptive erase and soft programming for memory |
| TWI501245B (zh) * | 2013-05-06 | 2015-09-21 | Phison Electronics Corp | 資料讀取方法、控制電路、記憶體模組與記憶體儲存裝置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5361227A (en) | 1991-12-19 | 1994-11-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
| US5509134A (en) | 1993-06-30 | 1996-04-16 | Intel Corporation | Method and apparatus for execution of operations in a flash memory array |
| SG49632A1 (en) | 1993-10-26 | 1998-06-15 | Intel Corp | Programmable code store circuitry for a nonvolatile semiconductor memory device |
| FR2711831B1 (fr) | 1993-10-26 | 1997-09-26 | Intel Corp | Procédé et circuit de mémorisation et de hiérarchisation d'ordres d'effacement dans un dispositif de mémoire. |
| US5497119A (en) | 1994-06-01 | 1996-03-05 | Intel Corporation | High precision voltage regulation circuit for programming multilevel flash memory |
| JP3180669B2 (ja) * | 1996-06-03 | 2001-06-25 | 日本電気株式会社 | 不揮発性半導体メモリおよびその書き込み方法 |
| US6148360A (en) | 1996-09-20 | 2000-11-14 | Intel Corporation | Nonvolatile writeable memory with program suspend command |
| KR100323554B1 (ko) | 1997-05-14 | 2002-03-08 | 니시무로 타이죠 | 불휘발성반도체메모리장치 |
| US6282145B1 (en) | 1999-01-14 | 2001-08-28 | Silicon Storage Technology, Inc. | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system |
| US7817469B2 (en) * | 2004-07-26 | 2010-10-19 | Sandisk Il Ltd. | Drift compensation in a flash memory |
-
2004
- 2004-10-07 IT IT001904A patent/ITMI20041904A1/it unknown
-
2005
- 2005-05-12 US US11/128,939 patent/US7345921B2/en not_active Expired - Fee Related
- 2005-10-03 TW TW094134458A patent/TWI299868B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20060077714A1 (en) | 2006-04-13 |
| US7345921B2 (en) | 2008-03-18 |
| TWI299868B (en) | 2008-08-11 |
| TW200620293A (en) | 2006-06-16 |
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