IT980554B - Procedimento e dispositivo per la formazione di monocristalli - Google Patents
Procedimento e dispositivo per la formazione di monocristalliInfo
- Publication number
- IT980554B IT980554B IT6768273A IT6768273A IT980554B IT 980554 B IT980554 B IT 980554B IT 6768273 A IT6768273 A IT 6768273A IT 6768273 A IT6768273 A IT 6768273A IT 980554 B IT980554 B IT 980554B
- Authority
- IT
- Italy
- Prior art keywords
- monocrystals
- procedure
- formation
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7209008A FR2175594B1 (it) | 1972-03-15 | 1972-03-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT980554B true IT980554B (it) | 1974-10-10 |
Family
ID=9095236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT6768273A IT980554B (it) | 1972-03-15 | 1973-03-12 | Procedimento e dispositivo per la formazione di monocristalli |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS492782A (it) |
| BE (1) | BE796707A (it) |
| DE (1) | DE2311573A1 (it) |
| FR (1) | FR2175594B1 (it) |
| GB (1) | GB1415549A (it) |
| IT (1) | IT980554B (it) |
| NL (1) | NL7303316A (it) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51145475A (en) * | 1975-06-10 | 1976-12-14 | Fujitsu Ltd | A process for producing semiconductive crystal |
| JPS5583335A (en) * | 1978-12-20 | 1980-06-23 | Hitachi Ltd | Digital-to-analog converter |
| CA1197755A (en) * | 1980-05-22 | 1985-12-10 | Robert A. Lancaster | Controlled directional solidification of semiconductor alloys |
| FR2487863A1 (fr) * | 1980-08-01 | 1982-02-05 | Sklyarov Alexei | Dispositif pour la croissance des monocristaux a partir d'alliages a constituants multiples |
| US4475582A (en) * | 1982-01-27 | 1984-10-09 | United Technologies Corporation | Casting a metal single crystal article using a seed crystal and a helix |
| US4590043A (en) * | 1982-12-27 | 1986-05-20 | Sri International | Apparatus for obtaining silicon from fluosilicic acid |
| FR2546912B1 (fr) * | 1983-06-06 | 1987-07-10 | Commissariat Energie Atomique | Procede et dispositif d'elaboration d'un monocristal |
| JPS6033286A (ja) * | 1983-07-28 | 1985-02-20 | Natsuo Yugawa | 単結晶製造用るつぼ |
| US5123996A (en) * | 1991-01-28 | 1992-06-23 | At&T Bell Laboratories | Crystal growth method and apparatus |
| EP2589687A1 (en) | 2011-11-04 | 2013-05-08 | Vesuvius France (S.A.) | Crucible and method for the production of a (near ) monocrystalline semiconductor ingot |
| EP2604728A1 (en) | 2011-12-12 | 2013-06-19 | Vesuvius France S.A. | Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same |
-
1972
- 1972-03-15 FR FR7209008A patent/FR2175594B1/fr not_active Expired
-
1973
- 1973-03-08 DE DE19732311573 patent/DE2311573A1/de active Pending
- 1973-03-09 NL NL7303316A patent/NL7303316A/xx not_active Application Discontinuation
- 1973-03-12 JP JP2806973A patent/JPS492782A/ja active Pending
- 1973-03-12 GB GB1176473A patent/GB1415549A/en not_active Expired
- 1973-03-12 IT IT6768273A patent/IT980554B/it active
- 1973-03-13 BE BE128739A patent/BE796707A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2175594A1 (it) | 1973-10-26 |
| DE2311573A1 (de) | 1973-09-27 |
| NL7303316A (it) | 1973-09-18 |
| BE796707A (fr) | 1973-09-13 |
| GB1415549A (en) | 1975-11-26 |
| FR2175594B1 (it) | 1974-09-13 |
| JPS492782A (it) | 1974-01-11 |
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