IT1301840B1 - Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi - Google Patents
Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processiInfo
- Publication number
- IT1301840B1 IT1301840B1 ITMI981494A IT1301840B1 IT 1301840 B1 IT1301840 B1 IT 1301840B1 IT MI981494 A ITMI981494 A IT MI981494A IT 1301840 B1 IT1301840 B1 IT 1301840B1
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- etching
- subjected
- light
- layer
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 3
- 230000002708 enhancing effect Effects 0.000 title abstract 2
- 238000005530 etching Methods 0.000 title abstract 2
- 238000010884 ion-beam technique Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000005389 semiconductor device fabrication Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT98MI001494 IT1301840B1 (it) | 1998-06-30 | 1998-06-30 | Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi |
US09/836,937 US6495455B2 (en) | 1998-06-30 | 2001-04-17 | Method for enhancing selectivity between a film of a light-sensitive material and a layer to be etched in electronic semiconductor device fabrication processes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT98MI001494 IT1301840B1 (it) | 1998-06-30 | 1998-06-30 | Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI981494A1 ITMI981494A1 (it) | 1999-12-30 |
IT1301840B1 true IT1301840B1 (it) | 2000-07-07 |
Family
ID=11380352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT98MI001494 IT1301840B1 (it) | 1998-06-30 | 1998-06-30 | Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi |
Country Status (2)
Country | Link |
---|---|
US (1) | US6495455B2 (it) |
IT (1) | IT1301840B1 (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITMI20042206A1 (it) * | 2004-11-17 | 2005-02-17 | St Microelectronics Srl | Procedimento per la definizione di cirfuiti integrati di dispositivi elettronici a semicondutture |
US7615050B2 (en) * | 2005-06-27 | 2009-11-10 | Boston Scientific Scimed, Inc. | Systems and methods for creating a lesion using transjugular approach |
US20070181530A1 (en) * | 2006-02-08 | 2007-08-09 | Lam Research Corporation | Reducing line edge roughness |
JP2013510445A (ja) * | 2009-11-09 | 2013-03-21 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体の異方性エッチングプロセス |
WO2011056783A2 (en) * | 2009-11-09 | 2011-05-12 | 3M Innovative Properties Company | Etching process for semiconductors |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4068018A (en) | 1974-09-19 | 1978-01-10 | Nippon Electric Co., Ltd. | Process for preparing a mask for use in manufacturing a semiconductor device |
US4468284A (en) * | 1983-07-06 | 1984-08-28 | Psi Star, Inc. | Process for etching an aluminum-copper alloy |
JP2639372B2 (ja) * | 1995-02-21 | 1997-08-13 | 日本電気株式会社 | 半導体装置の製造方法 |
TW451355B (en) | 1996-09-10 | 2001-08-21 | United Microelectronics Corp | Method for increasing the etching selectivity |
US5858879A (en) * | 1997-06-06 | 1999-01-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for etching metal lines with enhanced profile control |
US6121154A (en) * | 1997-12-23 | 2000-09-19 | Lam Research Corporation | Techniques for etching with a photoresist mask |
US6271154B1 (en) * | 1998-05-12 | 2001-08-07 | Advanced Micro Devices, Inc. | Methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profile |
-
1998
- 1998-06-30 IT IT98MI001494 patent/IT1301840B1/it active IP Right Grant
-
2001
- 2001-04-17 US US09/836,937 patent/US6495455B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20020008305A1 (en) | 2002-01-24 |
ITMI981494A1 (it) | 1999-12-30 |
US6495455B2 (en) | 2002-12-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |