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IT1220982B - Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo - Google Patents

Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo

Info

Publication number
IT1220982B
IT1220982B IT23930/83A IT2393083A IT1220982B IT 1220982 B IT1220982 B IT 1220982B IT 23930/83 A IT23930/83 A IT 23930/83A IT 2393083 A IT2393083 A IT 2393083A IT 1220982 B IT1220982 B IT 1220982B
Authority
IT
Italy
Prior art keywords
circuit
substrate
field
effect transistors
polarization voltage
Prior art date
Application number
IT23930/83A
Other languages
English (en)
Other versions
IT8323930A0 (it
Inventor
Paolo Rosini
Original Assignee
Ates Componenti Elettron
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron, Sgs Microelettronica Spa filed Critical Ates Componenti Elettron
Priority to IT23930/83A priority Critical patent/IT1220982B/it
Publication of IT8323930A0 publication Critical patent/IT8323930A0/it
Priority to FR8418097A priority patent/FR2555774B1/fr
Priority to GB08430148A priority patent/GB2151823A/en
Priority to DE19843443868 priority patent/DE3443868A1/de
Priority to KR1019840007559A priority patent/KR850004357A/ko
Priority to JP59253930A priority patent/JPS60157248A/ja
Application granted granted Critical
Publication of IT1220982B publication Critical patent/IT1220982B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
IT23930/83A 1983-11-30 1983-11-30 Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo IT1220982B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT23930/83A IT1220982B (it) 1983-11-30 1983-11-30 Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo
FR8418097A FR2555774B1 (fr) 1983-11-30 1984-11-28 Circuit regulateur de la tension de polarisation du substrat d'un circuit integre a transistors a effet de champ
GB08430148A GB2151823A (en) 1983-11-30 1984-11-29 Polarization voltage regulating circuit for field-effect transistor integrated circuit substrate
DE19843443868 DE3443868A1 (de) 1983-11-30 1984-11-30 Regelschaltung fuer die vorspannung des substrates einer integrierten schaltung mit feldeffekttransistoren
KR1019840007559A KR850004357A (ko) 1983-11-30 1984-11-30 전계효과 트랜지스터 집적회로의 기판의 분극전압 조정용 회로
JP59253930A JPS60157248A (ja) 1983-11-30 1984-11-30 電界効果トランジスタ集積回路の基板のバイアス電圧調整回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23930/83A IT1220982B (it) 1983-11-30 1983-11-30 Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo

Publications (2)

Publication Number Publication Date
IT8323930A0 IT8323930A0 (it) 1983-11-30
IT1220982B true IT1220982B (it) 1990-06-21

Family

ID=11210957

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23930/83A IT1220982B (it) 1983-11-30 1983-11-30 Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo

Country Status (6)

Country Link
JP (1) JPS60157248A (it)
KR (1) KR850004357A (it)
DE (1) DE3443868A1 (it)
FR (1) FR2555774B1 (it)
GB (1) GB2151823A (it)
IT (1) IT1220982B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
FR2677771A1 (fr) * 1991-06-17 1992-12-18 Samsung Electronics Co Ltd Circuit de detection de niveau de polarisation inverse dans un dispositif de memoire a semiconducteurs.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2966592D1 (en) * 1979-03-05 1984-03-01 Motorola Inc Substrate bias regulator
JPS6033314B2 (ja) * 1979-11-22 1985-08-02 富士通株式会社 基板バイアス電圧発生回路
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory

Also Published As

Publication number Publication date
GB2151823A (en) 1985-07-24
JPS60157248A (ja) 1985-08-17
FR2555774A1 (fr) 1985-05-31
DE3443868A1 (de) 1985-06-13
KR850004357A (ko) 1985-07-11
IT8323930A0 (it) 1983-11-30
GB8430148D0 (en) 1985-01-09
FR2555774B1 (fr) 1989-01-13

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129