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IT1168456B - ELECTROMAGNETIC RADIATION CONVERTER IN ELECTRIC SIGNAL - Google Patents

ELECTROMAGNETIC RADIATION CONVERTER IN ELECTRIC SIGNAL

Info

Publication number
IT1168456B
IT1168456B IT41672/81A IT4167281A IT1168456B IT 1168456 B IT1168456 B IT 1168456B IT 41672/81 A IT41672/81 A IT 41672/81A IT 4167281 A IT4167281 A IT 4167281A IT 1168456 B IT1168456 B IT 1168456B
Authority
IT
Italy
Prior art keywords
electric signal
electromagnetic radiation
radiation converter
converter
electromagnetic
Prior art date
Application number
IT41672/81A
Other languages
Italian (it)
Other versions
IT8141672A1 (en
IT8141672A0 (en
Inventor
Anatoly Fedorovich Plotnikov
Jury Mikhailovich Popov
Vladimir Alexandr Tolokonnikov
Vitaly Emmanuilovich Shubin
Nikolai Ivanovich Mironov
Vladimir Viktorovi Slavutinsky
Original Assignee
Fiz Inst Lebedeva
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fiz Inst Lebedeva filed Critical Fiz Inst Lebedeva
Publication of IT8141672A0 publication Critical patent/IT8141672A0/en
Publication of IT8141672A1 publication Critical patent/IT8141672A1/en
Application granted granted Critical
Publication of IT1168456B publication Critical patent/IT1168456B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Measurement Of Radiation (AREA)
IT41672/81A 1980-10-23 1981-10-22 ELECTROMAGNETIC RADIATION CONVERTER IN ELECTRIC SIGNAL IT1168456B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU802995104A SU915683A1 (en) 1980-10-23 1980-10-23 Optical radiation converter

Publications (3)

Publication Number Publication Date
IT8141672A0 IT8141672A0 (en) 1981-10-22
IT8141672A1 IT8141672A1 (en) 1983-04-22
IT1168456B true IT1168456B (en) 1987-05-20

Family

ID=20922673

Family Applications (1)

Application Number Title Priority Date Filing Date
IT41672/81A IT1168456B (en) 1980-10-23 1981-10-22 ELECTROMAGNETIC RADIATION CONVERTER IN ELECTRIC SIGNAL

Country Status (6)

Country Link
JP (1) JPS57103372A (en)
DE (1) DE3141956A1 (en)
FR (1) FR2493046B1 (en)
GB (1) GB2087645B (en)
IT (1) IT1168456B (en)
SU (1) SU915683A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115A (en) * 1982-06-25 1984-01-05 Nippon Telegr & Teleph Corp <Ntt> Method for connecting optical fiber by fusing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1044494A (en) * 1965-04-07 1966-09-28 Mullard Ltd Improvements in and relating to semiconductor devices
SE331864B (en) * 1969-05-30 1971-01-18 Inst Halvledarforskning Ab
FR2137184B1 (en) * 1971-05-14 1976-03-19 Commissariat Energie Atomique
US4016586A (en) * 1974-03-27 1977-04-05 Innotech Corporation Photovoltaic heterojunction device employing a wide bandgap material as an active layer
JPS6047752B2 (en) * 1975-08-20 1985-10-23 松下電器産業株式会社 friction tube target
GB1553684A (en) * 1976-08-20 1979-09-26 Matsushita Electric Ind Co Ltd Photoconductive devices
US4176275A (en) * 1977-08-22 1979-11-27 Minnesota Mining And Manufacturing Company Radiation imaging and readout system and method utilizing a multi-layered device having a photoconductive insulative layer

Also Published As

Publication number Publication date
DE3141956A1 (en) 1982-06-16
JPS6328502B2 (en) 1988-06-08
FR2493046B1 (en) 1985-11-15
JPS57103372A (en) 1982-06-26
FR2493046A1 (en) 1982-04-30
GB2087645A (en) 1982-05-26
DE3141956C2 (en) 1989-09-07
IT8141672A1 (en) 1983-04-22
SU915683A1 (en) 1985-10-23
GB2087645B (en) 1984-12-05
IT8141672A0 (en) 1981-10-22

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