[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

IT1042861B - Elemento memorizzatore statico costituito da transistori aeffetto di compo a canale complementare - Google Patents

Elemento memorizzatore statico costituito da transistori aeffetto di compo a canale complementare

Info

Publication number
IT1042861B
IT1042861B IT27635/75A IT2763575A IT1042861B IT 1042861 B IT1042861 B IT 1042861B IT 27635/75 A IT27635/75 A IT 27635/75A IT 2763575 A IT2763575 A IT 2763575A IT 1042861 B IT1042861 B IT 1042861B
Authority
IT
Italy
Prior art keywords
compo
transistors
effect
storage element
static storage
Prior art date
Application number
IT27635/75A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1042861B publication Critical patent/IT1042861B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
IT27635/75A 1974-09-26 1975-09-25 Elemento memorizzatore statico costituito da transistori aeffetto di compo a canale complementare IT1042861B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2446028A DE2446028C2 (de) 1974-09-26 1974-09-26 Statisches Speicherelement

Publications (1)

Publication Number Publication Date
IT1042861B true IT1042861B (it) 1980-01-30

Family

ID=5926819

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27635/75A IT1042861B (it) 1974-09-26 1975-09-25 Elemento memorizzatore statico costituito da transistori aeffetto di compo a canale complementare

Country Status (8)

Country Link
US (1) US3997881A (it)
JP (1) JPS5410414B2 (it)
BE (1) BE833886A (it)
DE (1) DE2446028C2 (it)
FR (1) FR2286470A1 (it)
GB (1) GB1526419A (it)
IT (1) IT1042861B (it)
NL (1) NL7509853A (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312239A (en) * 1976-07-20 1978-02-03 Matsushita Electric Ind Co Ltd Driving system for memory unit
JPS5221734A (en) * 1975-08-12 1977-02-18 Matsushita Electric Ind Co Ltd Information storing method and its device
JPS52153630A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Semiconductor memory device
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
FR2562705B1 (fr) * 1984-04-06 1986-06-27 Thomson Csf Mat Tel Cellule elementaire de memoire vive, et memoire vive realisee par association de telles cellules elementaires
US4620297A (en) * 1984-08-31 1986-10-28 Texas Instruments Incorporated Schmitt trigger based memory cell with assisted turn on
US4707808A (en) * 1985-04-26 1987-11-17 Rockwell International Corporation Small size, high speed GaAs data latch
JPH0668675A (ja) * 1992-08-21 1994-03-11 Takayama:Kk メモリデバイス
US5434816A (en) * 1994-06-23 1995-07-18 The United States Of America As Represented By The Secretary Of The Air Force Two-transistor dynamic random-access memory cell having a common read/write terminal
US5793668A (en) * 1997-06-06 1998-08-11 Timeplex, Inc. Method and apparatus for using parasitic capacitances of a printed circuit board as a temporary data storage medium working with a remote device
CN108806742B (zh) * 2017-05-04 2022-01-04 汤朝景 随机存取存储器并且具有与其相关的电路、方法以及设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell

Also Published As

Publication number Publication date
DE2446028C2 (de) 1984-02-16
JPS5160423A (it) 1976-05-26
JPS5410414B2 (it) 1979-05-07
FR2286470B1 (it) 1980-04-30
NL7509853A (nl) 1976-03-30
GB1526419A (en) 1978-09-27
DE2446028A1 (de) 1976-05-20
BE833886A (fr) 1976-01-16
US3997881A (en) 1976-12-14
FR2286470A1 (fr) 1976-04-23

Similar Documents

Publication Publication Date Title
IT1028280B (it) Valvola con elemento di chiusura sperico
IT1069751B (it) Elemento portante metallico per rinforzare un striscia flessibile di tenuta conformata a canale
BR7500102A (pt) Composicao adesiva
IT1042861B (it) Elemento memorizzatore statico costituito da transistori aeffetto di compo a canale complementare
IT1044690B (it) Dispositivo con due transistori a effetto di campo complementari
IT990432B (it) Circuito bistabile che utilizza transistor con effetto di campo a griglia isolata
AR205731A1 (es) Elemento flexible para monturas para anteojos
FR2281967A1 (fr) Composition adhesive
IT1038682B (it) Composizione adesiva
NL7514352A (nl) Transistorversterker met een beveiligingsscha- keling.
IT1015250B (it) Circuito di controllo a transistori
IT1042632B (it) Transtore memorizzatore a effetto di canpo con canale n
IT1060025B (it) Elemento memorizzatore statico a tre transistori
FR2277461A1 (fr) Amplificateur a transistor
IT1037242B (it) Elemento astiforme di fissaggio
IT1034924B (it) Elemento di fissaggio cieco autoperforante
BE833105A (fr) Polyurethanes elastiques thermoplastiques
IT970009B (it) Elemento di fissaggio elastico
IT1035773B (it) Amplificatore a transistor
FR2283918A1 (fr) Polyurethanes elastiques thermoplastiques
BR7406470D0 (pt) Elemento construtivo transistor
BE772575A (fr) Matieres a mouler transparentes resilientes
IT1048864B (it) Elemento di fissaggio
IT1034721B (it) Amplificatore a transistori
IT989154B (it) Registratore di diagrammi su striscia a doppio canale