IN177541B - - Google Patents
Info
- Publication number
- IN177541B IN177541B IN466CA1991A IN177541B IN 177541 B IN177541 B IN 177541B IN 466CA1991 A IN466CA1991 A IN 466CA1991A IN 177541 B IN177541 B IN 177541B
- Authority
- IN
- India
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/025—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPK087990 | 1990-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN177541B true IN177541B (en) | 1997-02-08 |
Family
ID=3774786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN466CA1991 IN177541B (en) | 1990-06-29 | 1991-06-19 |
Country Status (6)
| Country | Link |
|---|---|
| CN (1) | CN1050158C (en) |
| IL (1) | IL98627A (en) |
| IN (1) | IN177541B (en) |
| MY (1) | MY110504A (en) |
| WO (1) | WO1992000406A1 (en) |
| ZA (1) | ZA914759B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004056170A1 (en) * | 2004-08-06 | 2006-03-16 | Aixtron Ag | Apparatus and method for high throughput chemical vapor deposition |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57132543A (en) * | 1981-02-09 | 1982-08-16 | Nec Corp | Horizontal type reaction tube with rotary type sample holding and heating table |
| JPS59193131A (en) * | 1983-04-19 | 1984-11-01 | Agency Of Ind Science & Technol | Device for continuous growth of thin film |
| FR2591616A1 (en) * | 1985-12-17 | 1987-06-19 | Labo Electronique Physique | REACTOR CHAMBER FOR EPITAXIAL GROWTH IN STEAM PHASE OF SEMICONDUCTOR MATERIALS. |
| GB2196019A (en) * | 1986-10-07 | 1988-04-20 | Cambridge Instr Ltd | Metalorganic chemical vapour deposition |
| JPH0226893A (en) * | 1988-07-15 | 1990-01-29 | Fujitsu Ltd | Vapor growth device |
| GB8824102D0 (en) * | 1988-10-14 | 1988-11-23 | Pilkington Plc | Apparatus for coating glass |
| GB8824104D0 (en) * | 1988-10-14 | 1988-11-23 | Pilkington Plc | Process for coating glass |
| JPH0344470A (en) * | 1989-07-12 | 1991-02-26 | Toshiba Corp | Device for forming thin film on semiconductor substrate |
-
1991
- 1991-06-19 IN IN466CA1991 patent/IN177541B/en unknown
- 1991-06-20 WO PCT/AU1991/000262 patent/WO1992000406A1/en unknown
- 1991-06-20 ZA ZA914759A patent/ZA914759B/en unknown
- 1991-06-21 MY MYPI91001123A patent/MY110504A/en unknown
- 1991-06-26 IL IL9862791A patent/IL98627A/en not_active IP Right Cessation
- 1991-06-28 CN CN91105094A patent/CN1050158C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| MY110504A (en) | 1998-07-31 |
| ZA914759B (en) | 1992-06-24 |
| WO1992000406A1 (en) | 1992-01-09 |
| CN1059763A (en) | 1992-03-25 |
| IL98627A (en) | 1996-10-31 |
| CN1050158C (en) | 2000-03-08 |