IN139101B - - Google Patents

Info

Publication number: IN139101B
Authority: IN; India

Application number

IN943/CAL/74A

Other languages

English (en)

Inventor

R Charmakadze

R Chikovani

Z Alferov

Original Assignee

R Charmakadze

R Chikovani

Z Alferov

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-05-28

Filing date

1974-04-25

Publication date

1976-05-08

1974-04-25 Application filed by R Charmakadze, R Chikovani, Z Alferov filed Critical R Charmakadze

1976-05-08 Publication of IN139101B publication Critical patent/IN139101B/en

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/018—Compensation doping
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/066—Gp III-V liquid phase epitaxy
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Inorganic Chemistry (AREA)
Led Devices (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

IN943/CAL/74A 1973-05-28 1974-04-25 IN139101B (ru)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
SU1922832A SU511794A1 (ru)	1973-05-28	1973-05-28	Способ получени полупроводниковой светоизлучающей структуры

Publications (1)

Publication Number	Publication Date
IN139101B true IN139101B (ru)	1976-05-08

Family

ID=20553887

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IN943/CAL/74A IN139101B (ru)	1973-05-28	1974-04-25

Country Status (3)

Country	Link
US (1)	US3958265A (ru)
IN (1)	IN139101B (ru)
SU (1)	SU511794A1 (ru)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4001055A (en) *	1973-05-28	1977-01-04	Charmakadze Revaz A	Semiconductor light-emitting diode and method for producing same
US4055443A (en) *	1975-06-19	1977-10-25	Jury Stepanovich Akimov	Method for producing semiconductor matrix of light-emitting elements utilizing ion implantation and diffusion heating
JPS5245296A (en) *	1975-10-07	1977-04-09	Nippon Telegr & Teleph Corp <Ntt>	Semiconductive phototransmission pass and semiconductor emission devic e used it
US4021834A (en) *	1975-12-31	1977-05-03	The United States Of America As Represented By The Secretary Of The Army	Radiation-resistant integrated optical signal communicating device
US4141756A (en) *	1977-10-14	1979-02-27	Honeywell Inc.	Method of making a gap UV photodiode by multiple ion-implantations
US4216485A (en) *	1978-09-15	1980-08-05	Westinghouse Electric Corp.	Optical transistor structure
US4319937A (en) *	1980-11-12	1982-03-16	University Of Illinois Foundation	Homogeneous liquid phase epitaxial growth of heterojunction materials
US4376946A (en) *	1980-11-28	1983-03-15	Bell Telephone Laboratories, Incorporated	Superluminescent LED with efficient coupling to optical waveguide
US4477824A (en) *	1982-03-04	1984-10-16	At&T Bell Laboratories	Light emitting device for optical switching
DE102016013541A1 (de) *	2016-11-14	2018-05-17	3 - 5 Power Electronics GmbH	lll-V-Halbleiterdiode
DE102016013540A1 (de) *	2016-11-14	2018-05-17	3 - 5 Power Electronics GmbH	lll-V-Halbleiterdiode
DE102017011878A1 (de) *	2017-12-21	2019-06-27	3-5 Power Electronics GmbH	Stapelförmiges III-V-Halbleiterbauelement

1973
- 1973-05-28 SU SU1922832A patent/SU511794A1/ru active
1974
- 1974-04-25 IN IN943/CAL/74A patent/IN139101B/en unknown
- 1974-05-02 US US05/466,505 patent/US3958265A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US3958265A (en)	1976-05-18
SU511794A1 (ru)	1976-10-05

Publication	Publication Date	Title
AR201758A1 (ru)	1975-04-15
AU465372B2 (ru)	1975-09-25
AR201235Q (ru)	1975-02-21
AR201231Q (ru)	1975-02-21
AU474593B2 (ru)	1976-07-29
AU474511B2 (ru)	1976-07-22
AU474838B2 (ru)	1976-08-05
AU465453B2 (ru)	1975-09-25
AU465434B2 (ru)	1975-09-25
AU450229B2 (ru)	1974-07-04
AR201229Q (ru)	1975-02-21
AU472848B2 (ru)	1976-06-03
AR199451A1 (ru)	1974-08-30
AU477823B2 (ru)	1975-06-19
AR200885A1 (ru)	1974-12-27
AR200256A1 (ru)	1974-10-31
AR201432A1 (ru)	1975-03-14
AR210729A1 (ru)	1977-09-15
AU477824B2 (ru)	1975-07-17
AU461342B2 (ru)	1975-05-22
AR197627A1 (ru)	1974-04-23
AR193950A1 (ru)	1973-05-31
AR196382A1 (ru)	1973-12-18
AU447540B2 (ru)	1974-03-25
AR195311A1 (ru)	1973-09-28