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HK1211140A1 - Distributed power amplifier circuit - Google Patents

Distributed power amplifier circuit

Info

Publication number
HK1211140A1
HK1211140A1 HK15111771.5A HK15111771A HK1211140A1 HK 1211140 A1 HK1211140 A1 HK 1211140A1 HK 15111771 A HK15111771 A HK 15111771A HK 1211140 A1 HK1211140 A1 HK 1211140A1
Authority
HK
Hong Kong
Prior art keywords
power amplifier
amplifier circuit
distributed power
distributed
circuit
Prior art date
Application number
HK15111771.5A
Other languages
English (en)
Chinese (zh)
Inventor
慕豐浩
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of HK1211140A1 publication Critical patent/HK1211140A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/18—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling, i.e. distributed amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/26—Systems using multi-frequency codes
    • H04L27/2601—Multicarrier modulation systems
    • H04L27/2614—Peak power aspects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W52/00—Power management, e.g. Transmission Power Control [TPC] or power classes
    • H04W52/02—Power saving arrangements
    • H04W52/0203—Power saving arrangements in the radio access network or backbone network of wireless communication networks
    • H04W52/0206—Power saving arrangements in the radio access network or backbone network of wireless communication networks in access points, e.g. base stations
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W52/00—Power management, e.g. Transmission Power Control [TPC] or power classes
    • H04W52/02—Power saving arrangements
    • H04W52/0209—Power saving arrangements in terminal devices
    • H04W52/0261—Power saving arrangements in terminal devices managing power supply demand, e.g. depending on battery level
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/516—Some amplifier stages of an amplifier use supply voltages of different value
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/537—A transformer being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21145—Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
HK15111771.5A 2013-02-25 2015-11-30 Distributed power amplifier circuit HK1211140A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13156507.9A EP2770634B1 (fr) 2013-02-25 2013-02-25 Circuit amplificateur de puissance distribuée
US201361772263P 2013-03-04 2013-03-04
PCT/EP2014/053223 WO2014128158A1 (fr) 2013-02-25 2014-02-19 Circuit amplificateur de puissance distribué

Publications (1)

Publication Number Publication Date
HK1211140A1 true HK1211140A1 (en) 2016-05-13

Family

ID=47884131

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15111771.5A HK1211140A1 (en) 2013-02-25 2015-11-30 Distributed power amplifier circuit

Country Status (5)

Country Link
US (1) US9634614B2 (fr)
EP (1) EP2770634B1 (fr)
CN (1) CN105027431B (fr)
HK (1) HK1211140A1 (fr)
WO (1) WO2014128158A1 (fr)

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* Cited by examiner, † Cited by third party
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US9941201B1 (en) * 2016-02-02 2018-04-10 Altera Corporation Magnetically decoupled inductor structures
CN105897178B (zh) * 2016-05-04 2018-09-11 苏州雷诚芯微电子有限公司 一种高良率的倒装芯片线性功率放大器及其应用
CN105897180B (zh) * 2016-05-04 2018-10-30 苏州雷诚芯微电子有限公司 一种高良率的平衡散热的倒装芯片线性功率放大器及其应用
CN105978494B (zh) * 2016-05-04 2018-09-11 苏州雷诚芯微电子有限公司 一种高良率的倒装芯片功率放大器及其应用
EP3264595B1 (fr) 2016-06-30 2020-02-26 Nxp B.V. Amplificateurs de doherty
US10291193B2 (en) * 2016-09-02 2019-05-14 Texas Instruments Incorporated Combining power amplifiers at millimeter wave frequencies
US9929707B1 (en) * 2016-12-20 2018-03-27 Nxp Usa, Inc. Distributed amplifiers with impedance compensation circuits
CN107464411B (zh) * 2017-09-25 2023-05-26 河南卓正电子科技有限公司 一种用于集中抄表系统中的mbus电路
US10778176B2 (en) 2018-11-29 2020-09-15 Raytheon Company CMOS Guanella balun
US10950542B2 (en) * 2019-03-20 2021-03-16 Analog Devices, Inc. High-performance variable gain amplifier employing laminate transmission line structures
FI129952B (en) * 2019-05-03 2022-11-30 Teknologian Tutkimuskeskus Vtt Oy Power amplifier for antenna
CN110324015A (zh) * 2019-07-26 2019-10-11 成都理工大学 一种高功率分布型有源变压合成功率放大器
CN110350877A (zh) * 2019-07-26 2019-10-18 成都理工大学 一种高增益分布式变压器合成的功率放大器
EP3813253A1 (fr) * 2019-10-23 2021-04-28 Nxp B.V. Amplificateur de fréquence radio
EP4053861A1 (fr) 2021-03-05 2022-09-07 Nxp B.V. Auto-transformateur, dispositif de fréquence radio et procédé de construction d'un auto-transformateur
CN115882798B (zh) * 2023-02-08 2023-05-23 深圳飞骧科技股份有限公司 推挽结构射频功率放大器和射频芯片
CN115913154B (zh) * 2023-02-08 2023-05-23 深圳飞骧科技股份有限公司 微波功率放大器和微波芯片

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US3694765A (en) * 1971-02-08 1972-09-26 Bell Telephone Labor Inc Signal coupling circuit
EP1068666B1 (fr) 1998-04-02 2003-05-28 Ericsson, Inc. Synthese de la forme d'onde de puissance d'amplificateurs chireix/doherty hybrides
US5930128A (en) * 1998-04-02 1999-07-27 Ericsson Inc. Power waveform synthesis using bilateral devices
FR2783373B1 (fr) 1998-09-11 2002-10-31 Dassault Electronique Dispositif d'interface entre un capteur optoelectronique hyperfrequence a large bande et une charge
EP1323230B1 (fr) * 2000-09-21 2007-04-25 Koninklijke Philips Electronics N.V. Amplificateur de puissance a commutation
US6856199B2 (en) 2000-10-10 2005-02-15 California Institute Of Technology Reconfigurable distributed active transformers
FR2865869B1 (fr) 2004-02-03 2006-05-05 St Microelectronics Sa Amplificateur de signal electronique et procede de calcul du gain d'un tel amplificateur
US7372336B2 (en) 2004-12-31 2008-05-13 Samsung Electronics Co., Ltd. Small-sized on-chip CMOS power amplifier having improved efficiency
KR100756038B1 (ko) 2005-10-26 2007-09-07 삼성전자주식회사 멀티루프형 트랜스포머
US20080316775A1 (en) 2007-06-22 2008-12-25 Lead Year Enterprise Co., Ltd. Soft-switching circuit for power supply
WO2009044353A2 (fr) 2007-10-01 2009-04-09 North-West University Amplificateur à faible bruit réparti
TWM331175U (en) 2007-11-15 2008-04-21 Hipro Electronics Taiwan Co Ltd Boost/buck circuit of autotransformer
US20100019857A1 (en) * 2008-07-22 2010-01-28 Star Rf, Inc. Hybrid impedance matching
IT1392575B1 (it) 2008-12-30 2012-03-09 St Microelectronics Rousset Amplificatore con combinatore di potenza differenziale, a trasformatore attivo distribuito
TWI369070B (en) 2009-03-30 2012-07-21 Univ Nat Taiwan Distributed active transformer type millimeter-wave power amplifier circuit
EP2466746B1 (fr) 2010-12-16 2013-09-18 TELEFONAKTIEBOLAGET LM ERICSSON (publ) Amplificateur de faible bruit
KR20130055843A (ko) * 2011-11-21 2013-05-29 한국전자통신연구원 전력 증폭기 및 그 증폭 방법
WO2013138457A1 (fr) * 2012-03-15 2013-09-19 Newlans, Inc. Radio définie par logiciel avec amplificateurs à large bande et adaptation d'antenne

Also Published As

Publication number Publication date
US9634614B2 (en) 2017-04-25
CN105027431B (zh) 2017-12-08
WO2014128158A1 (fr) 2014-08-28
EP2770634A1 (fr) 2014-08-27
CN105027431A (zh) 2015-11-04
US20160006400A1 (en) 2016-01-07
EP2770634B1 (fr) 2018-09-19

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