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HK1243823A1 - 半導體裝置 - Google Patents

半導體裝置

Info

Publication number
HK1243823A1
HK1243823A1 HK18103067.2A HK18103067A HK1243823A1 HK 1243823 A1 HK1243823 A1 HK 1243823A1 HK 18103067 A HK18103067 A HK 18103067A HK 1243823 A1 HK1243823 A1 HK 1243823A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
HK18103067.2A
Other languages
English (en)
Inventor
Shin Shiko
Saito Takayuki
Horibe Hiroshi
Original Assignee
瑞薩電子株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子株式會社 filed Critical 瑞薩電子株式會社
Publication of HK1243823A1 publication Critical patent/HK1243823A1/zh

Links

Classifications

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    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
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    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/92—Specific sequence of method steps
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    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
HK18103067.2A 2012-03-08 2018-03-02 半導體裝置 HK1243823A1 (zh)

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JP2013187373A (ja) 2013-09-19
US9368463B2 (en) 2016-06-14
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US9230930B2 (en) 2016-01-05
CN203277367U (zh) 2013-11-06
US8686573B2 (en) 2014-04-01
KR20130103400A (ko) 2013-09-23
CN107256856B (zh) 2020-03-31
TW201338112A (zh) 2013-09-16
US20150228609A1 (en) 2015-08-13
US20130234309A1 (en) 2013-09-12
TWI553806B (zh) 2016-10-11
KR102046453B1 (ko) 2019-11-19
CN103311212B (zh) 2017-06-20
CN107256856A (zh) 2017-10-17
US20140183734A1 (en) 2014-07-03

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