HK1188330A1 - 雙側圖像傳感器 - Google Patents
雙側圖像傳感器Info
- Publication number
- HK1188330A1 HK1188330A1 HK14101174.0A HK14101174A HK1188330A1 HK 1188330 A1 HK1188330 A1 HK 1188330A1 HK 14101174 A HK14101174 A HK 14101174A HK 1188330 A1 HK1188330 A1 HK 1188330A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- double
- image sensor
- sided image
- sided
- sensor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/442,562 US8686342B2 (en) | 2012-04-09 | 2012-04-09 | Double-sided image sensor formed on a single semiconductor wafer die |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1188330A1 true HK1188330A1 (zh) | 2014-04-25 |
Family
ID=49291548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK14101174.0A HK1188330A1 (zh) | 2012-04-09 | 2014-02-10 | 雙側圖像傳感器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8686342B2 (zh) |
| CN (1) | CN103367380B (zh) |
| HK (1) | HK1188330A1 (zh) |
| TW (1) | TWI502735B (zh) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9153565B2 (en) | 2012-06-01 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensors with a high fill-factor |
| US8629524B2 (en) | 2012-04-27 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for vertically integrated backside illuminated image sensors |
| US8957358B2 (en) * | 2012-04-27 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor chips with stacked scheme and methods for forming the same |
| US10090349B2 (en) | 2012-08-09 | 2018-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor chips with stacked scheme and methods for forming the same |
| KR101402750B1 (ko) * | 2012-09-26 | 2014-06-11 | (주)실리콘화일 | 3차원 구조를 가지는 이미지센서의 분리형 단위화소 |
| JP6303803B2 (ja) | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| US9887228B2 (en) * | 2014-01-20 | 2018-02-06 | Himax Imaging, Inc. | Image sensor with oblique pick up plug and semiconductor structure comprising the same |
| KR102261855B1 (ko) * | 2014-06-13 | 2021-06-07 | 삼성전자주식회사 | 색분리 소자를 포함하는 적층형 이미지 센서 및 상기 이미지 센서를 포함하는 촬상 장치 |
| KR102383649B1 (ko) | 2014-08-19 | 2022-04-08 | 삼성전자주식회사 | Cmos 이미지 센서 |
| US9826214B2 (en) * | 2014-09-08 | 2017-11-21 | Microsoft Technology Licensing, Llc. | Variable resolution pixel |
| US9774801B2 (en) * | 2014-12-05 | 2017-09-26 | Qualcomm Incorporated | Solid state image sensor with enhanced charge capacity and dynamic range |
| US9741755B2 (en) * | 2014-12-22 | 2017-08-22 | Google Inc. | Physical layout and structure of RGBZ pixel cell unit for RGBZ image sensor |
| KR102541701B1 (ko) * | 2016-01-15 | 2023-06-13 | 삼성전자주식회사 | 씨모스 이미지 센서 |
| CN106981495B (zh) * | 2016-01-15 | 2019-10-25 | 中芯国际集成电路制造(上海)有限公司 | 一种cmos图像传感器及其制作方法 |
| US11961865B2 (en) | 2016-02-09 | 2024-04-16 | Sony Group Corporation | Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus |
| US9806117B2 (en) * | 2016-03-15 | 2017-10-31 | Omnivision Technologies, Inc. | Biased deep trench isolation |
| JP6789653B2 (ja) * | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
| US10002870B2 (en) * | 2016-08-16 | 2018-06-19 | Texas Instruments Incorporated | Process enhancement using double sided epitaxial on substrate |
| TWI633788B (zh) | 2017-06-30 | 2018-08-21 | 晶相光電股份有限公司 | 主動式畫素感測器 |
| CN107978614A (zh) * | 2017-12-22 | 2018-05-01 | 德淮半导体有限公司 | 一种图像传感器及其制备方法 |
| CN110634892B (zh) * | 2018-06-22 | 2022-02-15 | 中芯集成电路（宁波）有限公司 | 光电探测器及其制造方法、图像传感器 |
| US11101311B2 (en) | 2018-06-22 | 2021-08-24 | Ningbo Semiconductor International Corporation | Photodetector and fabrication method, and imaging sensor |
| US11079282B2 (en) * | 2018-11-28 | 2021-08-03 | Semiconductor Components Industries, Llc | Flexible interconnect sensing devices and related methods |
| CN111580196A (zh) * | 2019-02-19 | 2020-08-25 | 北京北科天绘科技有限公司 | 一种具有电触点的透镜组件、光电探测器及激光雷达 |
| US11121169B2 (en) * | 2019-06-25 | 2021-09-14 | Omnivision Technologies, Inc. | Metal vertical transfer gate with high-k dielectric passivation lining |
| CN110299375B (zh) * | 2019-07-08 | 2021-06-18 | 芯盟科技有限公司 | 半导体结构及其形成方法 |
| US11438486B2 (en) | 2019-08-26 | 2022-09-06 | Qualcomm Incorporated | 3D active depth sensing with laser pulse train bursts and a gated sensor |
| US11437416B2 (en) * | 2019-09-10 | 2022-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pixel device layout to reduce pixel noise |
| US12142625B2 (en) | 2022-09-30 | 2024-11-12 | Omnivision Technologies, Inc. | Imaging system with selective readout for visible-infrared image capture |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150708A (en) | 1998-11-13 | 2000-11-21 | Advanced Micro Devices, Inc. | Advanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit density |
| US6927432B2 (en) | 2003-08-13 | 2005-08-09 | Motorola, Inc. | Vertically integrated photosensor for CMOS imagers |
| KR100775058B1 (ko) * | 2005-09-29 | 2007-11-08 | 삼성전자주식회사 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
| US7202140B1 (en) | 2005-12-07 | 2007-04-10 | Chartered Semiconductor Manufacturing, Ltd | Method to fabricate Ge and Si devices together for performance enhancement |
| US8013342B2 (en) | 2007-11-14 | 2011-09-06 | International Business Machines Corporation | Double-sided integrated circuit chips |
| US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
| JP5258207B2 (ja) | 2007-05-29 | 2013-08-07 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
| US7858915B2 (en) * | 2008-03-31 | 2010-12-28 | Eastman Kodak Company | Active pixel sensor having two wafers |
| US8471939B2 (en) * | 2008-08-01 | 2013-06-25 | Omnivision Technologies, Inc. | Image sensor having multiple sensing layers |
| US8137995B2 (en) | 2008-12-11 | 2012-03-20 | Stats Chippac, Ltd. | Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures |
| US8405115B2 (en) * | 2009-01-28 | 2013-03-26 | Maxim Integrated Products, Inc. | Light sensor using wafer-level packaging |
| US8299583B2 (en) | 2009-03-05 | 2012-10-30 | International Business Machines Corporation | Two-sided semiconductor structure |
| US7915645B2 (en) | 2009-05-28 | 2011-03-29 | International Rectifier Corporation | Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same |
-
2012
- 2012-04-09 US US13/442,562 patent/US8686342B2/en active Active
-
2013
- 2013-04-08 CN CN201310119815.7A patent/CN103367380B/zh active Active
- 2013-04-08 TW TW102112397A patent/TWI502735B/zh active
-
2014
- 2014-02-10 HK HK14101174.0A patent/HK1188330A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN103367380A (zh) | 2013-10-23 |
| TW201347161A (zh) | 2013-11-16 |
| US8686342B2 (en) | 2014-04-01 |
| CN103367380B (zh) | 2016-05-18 |
| US20130264467A1 (en) | 2013-10-10 |
| TWI502735B (zh) | 2015-10-01 |
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