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HK1185923A1 - 成膜裝置 - Google Patents

成膜裝置

Info

Publication number
HK1185923A1
HK1185923A1 HK13113303.0A HK13113303A HK1185923A1 HK 1185923 A1 HK1185923 A1 HK 1185923A1 HK 13113303 A HK13113303 A HK 13113303A HK 1185923 A1 HK1185923 A1 HK 1185923A1
Authority
HK
Hong Kong
Prior art keywords
film formation
formation device
film
formation
Prior art date
Application number
HK13113303.0A
Other languages
English (en)
Inventor
織田容征
白幡孝洋
吉田章男
Original Assignee
東芝三菱電機產業系統株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝三菱電機產業系統株式會社 filed Critical 東芝三菱電機產業系統株式會社
Publication of HK1185923A1 publication Critical patent/HK1185923A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/0012—Apparatus for achieving spraying before discharge from the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
    • B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
    • B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
    • B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
    • B05B7/0441—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid with one inner conduit of liquid surrounded by an external conduit of gas upstream the mixing chamber
    • B05B7/0458—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid with one inner conduit of liquid surrounded by an external conduit of gas upstream the mixing chamber the gas and liquid flows being perpendicular just upstream the mixing chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nozzles (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
HK13113303.0A 2011-03-15 2013-11-28 成膜裝置 HK1185923A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/055986 WO2012124047A1 (ja) 2011-03-15 2011-03-15 成膜装置

Publications (1)

Publication Number Publication Date
HK1185923A1 true HK1185923A1 (zh) 2014-05-09

Family

ID=46830180

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13113303.0A HK1185923A1 (zh) 2011-03-15 2013-11-28 成膜裝置

Country Status (8)

Country Link
US (1) US10121931B2 (zh)
JP (1) JP5529340B2 (zh)
KR (1) KR101454566B1 (zh)
CN (1) CN103314134B (zh)
DE (1) DE112011105041B4 (zh)
HK (1) HK1185923A1 (zh)
TW (1) TWI466731B (zh)
WO (1) WO2012124047A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115228643A (zh) * 2022-09-03 2022-10-25 苏州微知电子科技有限公司 一种气动雾化喷涂方法及系统

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101505354B1 (ko) 2011-09-13 2015-03-23 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 산화막 성막 방법 및 산화막 성막 장치
JP5941818B2 (ja) 2012-10-10 2016-06-29 日本発條株式会社 成膜方法及び成膜装置
KR101764987B1 (ko) * 2012-11-05 2017-08-03 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 성막 장치
FI126315B (en) * 2014-07-07 2016-09-30 Beneq Oy A nozzle head, apparatus and method for subjecting a substrate surface to successive surface reactions
CN107073487B (zh) * 2014-10-01 2020-03-27 东芝三菱电机产业系统株式会社 成膜装置
CN104561939B (zh) * 2015-01-12 2017-11-24 深圳清溢光电股份有限公司 超薄反应腔
US10290762B2 (en) * 2015-06-18 2019-05-14 Toshiba Mitsubishi-Electric Industrial Systems Corporation Metal oxide film formation method
US11555245B2 (en) 2015-06-18 2023-01-17 Toshiba Mitsubishi-Electric Industrial Systems Corporation Metal oxide film formation method
US11124877B2 (en) 2015-10-19 2021-09-21 Toshiba Mitsubishi-Electric Industrial Systems Corporation Film forming device including a detachable bottom plate for forming a film on a substrate
KR102193365B1 (ko) * 2015-10-19 2020-12-22 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 성막 장치
JP6466876B2 (ja) * 2016-03-29 2019-02-06 東芝三菱電機産業システム株式会社 成膜装置
JP6466877B2 (ja) * 2016-03-29 2019-02-06 東芝三菱電機産業システム株式会社 成膜装置
US10294562B2 (en) * 2016-04-05 2019-05-21 Aixtron Se Exhaust manifold in a CVD reactor
CN107345294A (zh) * 2017-07-26 2017-11-14 北京芯微诺达科技有限公司 一种等离子体设备的进气结构
JP6529628B2 (ja) * 2018-04-17 2019-06-12 東芝三菱電機産業システム株式会社 成膜装置
CN113227453B (zh) * 2018-12-28 2024-04-16 东京毅力科创株式会社 基板液处理装置和基板液处理方法
KR102507701B1 (ko) * 2019-02-28 2023-03-09 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 성막 장치
JP7485047B2 (ja) * 2020-07-27 2024-05-16 株式会社ニコン 成膜装置、ミスト成膜装置、および導電膜の製造方法
WO2023054531A1 (ja) * 2021-09-29 2023-04-06 京セラ株式会社 シャワープレート

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JPH07142394A (ja) * 1993-11-12 1995-06-02 Sony Corp Ｃｖｄ方法及びｃｖｄ装置
JP3532066B2 (ja) * 1997-05-01 2004-05-31 松下電器産業株式会社 液体原料の蒸着方法および装置
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JPH11200052A (ja) * 1998-01-13 1999-07-27 Nissin Electric Co Ltd 化学的気相成長装置
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JP2001054746A (ja) 1999-08-20 2001-02-27 Mitsubishi Heavy Ind Ltd ガスノズル
TWI334888B (zh) 2000-09-08 2010-12-21 Tokyo Electron Ltd
JP2002212786A (ja) 2001-01-17 2002-07-31 Ebara Corp 基板処理装置
CN1302152C (zh) * 2001-03-19 2007-02-28 株式会社Ips 化学气相沉积设备
JP2003145062A (ja) * 2001-11-14 2003-05-20 Mitsubishi Electric Corp 洗浄用２流体ジェットノズル、洗浄装置およびこれらを用いた半導体装置の製造方法
JP2006249490A (ja) * 2005-03-10 2006-09-21 Fujikura Ltd 成膜装置用エアロゾル噴射装置および成膜装置
CN101351868B (zh) * 2005-12-29 2013-03-13 3M创新有限公司 使用涂覆工艺雾化材料的方法
JP4940425B2 (ja) 2006-03-24 2012-05-30 国立大学法人京都大学 原料ガス噴出用ノズル及び化学的気相成膜装置
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JP5614558B2 (ja) 2010-06-01 2014-10-29 東芝三菱電機産業システム株式会社 金属酸化膜の成膜装置、金属酸化膜の成膜方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115228643A (zh) * 2022-09-03 2022-10-25 苏州微知电子科技有限公司 一种气动雾化喷涂方法及系统

Also Published As

Publication number Publication date
KR101454566B1 (ko) 2014-10-23
WO2012124047A1 (ja) 2012-09-20
CN103314134B (zh) 2015-07-15
US20130247820A1 (en) 2013-09-26
JP5529340B2 (ja) 2014-06-25
JPWO2012124047A1 (ja) 2014-07-17
DE112011105041B4 (de) 2020-11-05
CN103314134A (zh) 2013-09-18
DE112011105041T5 (de) 2013-12-19
US10121931B2 (en) 2018-11-06
TWI466731B (zh) 2015-01-01
TW201249545A (en) 2012-12-16
KR20130087560A (ko) 2013-08-06

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