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GB9921752D0 - Diode-free cross-point array architecture for magnetic random access memories - Google Patents

Diode-free cross-point array architecture for magnetic random access memories

Info

Publication number
GB9921752D0
GB9921752D0 GBGB9921752.3A GB9921752A GB9921752D0 GB 9921752 D0 GB9921752 D0 GB 9921752D0 GB 9921752 A GB9921752 A GB 9921752A GB 9921752 D0 GB9921752 D0 GB 9921752D0
Authority
GB
United Kingdom
Prior art keywords
diode
random access
access memories
magnetic random
free cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB9921752.3A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WANG FRANK Z
Original Assignee
WANG FRANK Z
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WANG FRANK Z filed Critical WANG FRANK Z
Priority to GBGB9921752.3A priority Critical patent/GB9921752D0/en
Publication of GB9921752D0 publication Critical patent/GB9921752D0/en
Priority to GB0008977A priority patent/GB2356502A/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
GBGB9921752.3A 1999-09-15 1999-09-15 Diode-free cross-point array architecture for magnetic random access memories Ceased GB9921752D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB9921752.3A GB9921752D0 (en) 1999-09-15 1999-09-15 Diode-free cross-point array architecture for magnetic random access memories
GB0008977A GB2356502A (en) 1999-09-15 2000-04-13 Diode free cross point array for magnetic random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9921752.3A GB9921752D0 (en) 1999-09-15 1999-09-15 Diode-free cross-point array architecture for magnetic random access memories

Publications (1)

Publication Number Publication Date
GB9921752D0 true GB9921752D0 (en) 1999-11-17

Family

ID=10860923

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9921752.3A Ceased GB9921752D0 (en) 1999-09-15 1999-09-15 Diode-free cross-point array architecture for magnetic random access memories
GB0008977A Withdrawn GB2356502A (en) 1999-09-15 2000-04-13 Diode free cross point array for magnetic random access memory

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0008977A Withdrawn GB2356502A (en) 1999-09-15 2000-04-13 Diode free cross point array for magnetic random access memory

Country Status (1)

Country Link
GB (2) GB9921752D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
US10833264B2 (en) * 2016-03-23 2020-11-10 Forschungszentrum Juelich Gmbh Method for producing a memory cell having a porous dielectric and use of the memory cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1584742A (en) * 1968-03-28 1970-01-02
US3573760A (en) * 1968-12-16 1971-04-06 Ibm High density thin film memory and method of operation
US3798623A (en) * 1972-07-20 1974-03-19 Sperry Rand Corp Quad density solid stack memory
JPH041990A (en) * 1990-04-18 1992-01-07 Nec Corp Magnetic storage element and its access method
US5748519A (en) * 1996-12-13 1998-05-05 Motorola, Inc. Method of selecting a memory cell in a magnetic random access memory device
TW411471B (en) * 1997-09-17 2000-11-11 Siemens Ag Memory-cell device
US6104633A (en) * 1998-02-10 2000-08-15 International Business Machines Corporation Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
GB2343308B (en) * 1998-10-30 2000-10-11 Nikolai Franz Gregor Schwabe Magnetic storage device

Also Published As

Publication number Publication date
GB2356502A (en) 2001-05-23
GB0008977D0 (en) 2000-05-31

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)