GB995527A - Alloy-diffused transistor - Google Patents
Alloy-diffused transistorInfo
- Publication number
- GB995527A GB995527A GB10546/64A GB1054664A GB995527A GB 995527 A GB995527 A GB 995527A GB 10546/64 A GB10546/64 A GB 10546/64A GB 1054664 A GB1054664 A GB 1054664A GB 995527 A GB995527 A GB 995527A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloyed
- layer
- region
- antimony
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052787 antimony Inorganic materials 0.000 abstract 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 4
- 229910052733 gallium Inorganic materials 0.000 abstract 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H01L29/00—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/035—Diffusion through a layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
995,527. Semi-conductor devices. MOTOROLA Inc. March 12, 1964 [March 22, 1963], 10546/64. Heading H1K. In a transistor comprising a semi-conductor body of one conductivity type having an alloyed layer of opposite conductivity type on one face and having an emitter region of the first conductivity type alloyed through the layer, the base region of the opposite conductivity type is diffused out of the alloyed emitter region. As shown, Fig. 3, a wafer 30 of P-type germanium has a disc of lead doped with antimony alloyed to its surface to form an N+ type regrown layer 26. Any lead or antimony remaining on the surface is removed by etching the wafer in a mixture of acetic acid and hydrogen peroxide. A collector contact 22 of lead doped with gallium is alloyed to the lower face of the wafer. An emitter ring 23 of lead doped with 0À8% gallium and 1À2% antimony is alloyed to the upper surface of the wafer so that the molten alloyed region extends through the regrown layer 26. The temperature is then reduced to allow a small amount of regrowth and maintained at this level for a sufficient time to allow the antimony, which has a higher diffusion constant than gallium, to diffuse out of the alloyed emitter region to form a thin N-type base region 27 connected to alloyed region 26. During the diffusion gallium and antimony evaporate from the emitter and form a very thin P-type layer and a thicker N-type layer in the exposed surfaces of the wafer. This thin P-type layer is removed using a light chemical etch and circular base contact 24 and annular base contact 25, both of lead doped with antimony, are then alloyed to layer 26. The surface of the base region is masked with wax and the collector is subjected to an electrolytic or chemical etch. The wax is removed and the base region etched lightly to clean the emitter junction. The device is washed in deionized water and encapsulated in the hermetically sealed housing shown in Fig. 1. Contact 22 is joined to the mounting base 13, the conducting strap 15 is joined to emitter contact 23 at two plates, and conducting strap 16 is joined to base contact 25 and has an arch 17 which makes contact with the central base contact 24. The housing is filled with nitrogen before it is sealed. Typical characteristics of the transistor are given.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US267220A US3309244A (en) | 1963-03-22 | 1963-03-22 | Alloy-diffused method for producing semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB995527A true GB995527A (en) | 1965-06-16 |
Family
ID=23017838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB10546/64A Expired GB995527A (en) | 1963-03-22 | 1964-03-12 | Alloy-diffused transistor |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3309244A (en) |
| JP (1) | JPS4911033B1 (en) |
| BE (1) | BE645252A (en) |
| DE (1) | DE1935088U (en) |
| DK (1) | DK117363B (en) |
| FR (1) | FR1397401A (en) |
| GB (1) | GB995527A (en) |
| NL (1) | NL6402683A (en) |
| NO (1) | NO116431B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3577045A (en) * | 1968-09-18 | 1971-05-04 | Gen Electric | High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities |
| US3905844A (en) * | 1971-06-15 | 1975-09-16 | Matsushita Electric Ind Co Ltd | Method of making a PN junction device by metal dot alloying and recrystallization |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
| US2943006A (en) * | 1957-05-06 | 1960-06-28 | Westinghouse Electric Corp | Diffused transistors and processes for making the same |
| NL257150A (en) * | 1960-10-22 | 1900-01-01 | ||
| US3211594A (en) * | 1961-12-19 | 1965-10-12 | Hughes Aircraft Co | Semiconductor device manufacture |
-
1963
- 1963-03-22 US US267220A patent/US3309244A/en not_active Expired - Lifetime
-
1964
- 1964-03-12 GB GB10546/64A patent/GB995527A/en not_active Expired
- 1964-03-13 NL NL6402683A patent/NL6402683A/xx unknown
- 1964-03-16 BE BE645252D patent/BE645252A/xx unknown
- 1964-03-17 NO NO152483A patent/NO116431B/no unknown
- 1964-03-18 FR FR967809A patent/FR1397401A/en not_active Expired
- 1964-03-18 DK DK137664AA patent/DK117363B/en unknown
- 1964-03-21 JP JP39015303A patent/JPS4911033B1/ja active Pending
- 1964-03-23 DE DEM47770U patent/DE1935088U/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DK117363B (en) | 1970-04-20 |
| US3309244A (en) | 1967-03-14 |
| JPS4911033B1 (en) | 1974-03-14 |
| NO116431B (en) | 1969-03-24 |
| BE645252A (en) | 1964-07-16 |
| FR1397401A (en) | 1965-04-30 |
| DE1935088U (en) | 1966-03-24 |
| NL6402683A (en) | 1964-09-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB730123A (en) | Improved method of fabricating semi-conductive devices | |
| GB1059739A (en) | Semiconductor element and device and method fabricating the same | |
| GB1028782A (en) | Semiconductor light-producing device | |
| GB959447A (en) | Semiconductor devices | |
| GB972512A (en) | Methods of making semiconductor devices | |
| GB1010192A (en) | Improvements in or relating to semi-conductor devices | |
| GB1018399A (en) | Semiconductor devices | |
| GB836585A (en) | Improvements in or relating to semi-conductive devices | |
| GB878792A (en) | Transistor and method of making same | |
| GB998388A (en) | Improvements in or relating to semiconductor junction devices | |
| GB856430A (en) | Improvements in and relating to semi-conductive devices | |
| GB1145121A (en) | Improvements in and relating to transistors | |
| GB983266A (en) | Semiconductor switching devices | |
| GB1110281A (en) | Semiconductor junction device for generating optical radiation | |
| GB1073135A (en) | Semiconductor current limiter | |
| GB995527A (en) | Alloy-diffused transistor | |
| GB896717A (en) | Semiconductor diode | |
| GB969592A (en) | A semi-conductor device | |
| GB1080560A (en) | Semiconductor diode device | |
| JPS5548958A (en) | Semiconductor device | |
| GB968106A (en) | Improvements in or relating to semiconductor devices | |
| GB1110321A (en) | Improvements in or relating to semiconductor devices | |
| GB728940A (en) | Improvements in and relating to methods of making broad area semi-conductor devices | |
| GB1007952A (en) | Improvements in and relating to semi-conductor devices | |
| GB985380A (en) | Semiconductor devices |