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GB9826519D0 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB9826519D0
GB9826519D0 GBGB9826519.2A GB9826519A GB9826519D0 GB 9826519 D0 GB9826519 D0 GB 9826519D0 GB 9826519 A GB9826519 A GB 9826519A GB 9826519 D0 GB9826519 D0 GB 9826519D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB9826519.2A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Optoelectronics Corp
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to GBGB9826519.2A priority Critical patent/GB9826519D0/en
Publication of GB9826519D0 publication Critical patent/GB9826519D0/en
Priority to JP11343421A priority patent/JP2000173941A/en
Priority to GB9928532A priority patent/GB2344462B/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
GBGB9826519.2A 1998-12-02 1998-12-02 Semiconductor devices Ceased GB9826519D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GBGB9826519.2A GB9826519D0 (en) 1998-12-02 1998-12-02 Semiconductor devices
JP11343421A JP2000173941A (en) 1998-12-02 1999-12-02 Semiconductor device
GB9928532A GB2344462B (en) 1998-12-02 1999-12-02 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9826519.2A GB9826519D0 (en) 1998-12-02 1998-12-02 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB9826519D0 true GB9826519D0 (en) 1999-01-27

Family

ID=10843534

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9826519.2A Ceased GB9826519D0 (en) 1998-12-02 1998-12-02 Semiconductor devices
GB9928532A Expired - Fee Related GB2344462B (en) 1998-12-02 1999-12-02 Semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9928532A Expired - Fee Related GB2344462B (en) 1998-12-02 1999-12-02 Semiconductor devices

Country Status (2)

Country Link
JP (1) JP2000173941A (en)
GB (2) GB9826519D0 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104183793A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Preparation method for organic light-emitting device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3812519A (en) * 1970-02-07 1974-05-21 Tokyo Shibaura Electric Co Silicon double doped with p and as or b and as
US4111719A (en) * 1976-12-06 1978-09-05 International Business Machines Corporation Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium
GB2086135B (en) * 1980-09-30 1985-08-21 Nippon Telegraph & Telephone Electrode and semiconductor device provided with the electrode
US4631234A (en) * 1985-09-13 1986-12-23 Texas Instruments Incorporated Germanium hardened silicon substrate
DE68906239T2 (en) * 1988-10-27 1993-08-12 Fujitsu Ltd METHOD FOR PRODUCING A BIPOLAR TRANSISTOR WITH A HETEROVER TRANSITION.
JP2809692B2 (en) * 1989-04-28 1998-10-15 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
US5553566A (en) * 1995-06-22 1996-09-10 Motorola Inc. Method of eliminating dislocations and lowering lattice strain for highly doped N+ substrates
EP0807978A3 (en) * 1996-05-10 1997-11-26 Paul-Drude-Institut für Festkörperelektronik A method of fabricating a layer of high p-type conductivity in a semiconductor component and a semiconductor component having such a layer

Also Published As

Publication number Publication date
GB9928532D0 (en) 2000-02-02
GB2344462B (en) 2001-05-16
GB2344462A (en) 2000-06-07
JP2000173941A (en) 2000-06-23

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)