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GB976102A - Method to produce multiple layer magnetic elements - Google Patents

Method to produce multiple layer magnetic elements

Info

Publication number
GB976102A
GB976102A GB535062A GB535062A GB976102A GB 976102 A GB976102 A GB 976102A GB 535062 A GB535062 A GB 535062A GB 535062 A GB535062 A GB 535062A GB 976102 A GB976102 A GB 976102A
Authority
GB
United Kingdom
Prior art keywords
cores
substrate
deposited
core
pict
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB535062A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sperry Corp
Original Assignee
Sperry Rand Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sperry Rand Corp filed Critical Sperry Rand Corp
Publication of GB976102A publication Critical patent/GB976102A/en
Expired legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/12Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
    • H01F1/14Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Thin Magnetic Films (AREA)

Abstract

<PICT:0976102/C6-C7/1> <PICT:0976102/C6-C7/2> A magnetic information storage device comprises two magnetic film cores deposited in sequence on a substrate, the cores having different coercivities. A barrier layer, which may be of silicon monoxide, silicon dioxide, magnesium fluoride, aluminium oxide, magnesium oxide and synthetic resins, prevents interdiffusion of the two cores. The arrangement may be used as a non-destructive store in which the second deposited core, having the lower coercivity, is read destructively and the information is subsequently rewritten in the second core by the remanent magnetization of the first deposited core. The device may be manufactured using crucibles 4, 5, 6, Fig. 3 in a bell-jar evaluated to 10-4 to 10-6 mm. Hg., each crucible having an electric heater and shutters 18, 19, 20. The substrate 12 has a heater 7 and is covered by a mask 14. A magnetic field is applied during the deposition process by a permanent- or electro-magnet 8, which may be rotated if desired so that the easy axes of the two cores are not parallel. The temperature of the substrate may be measured by a thermocouple. The Specification discloses suitable compositions for the cores and barrier layer, and discusses the properties and dimensions required and methods of determining the thickness of the layers. The substrate mentioned is glass although amorphous oxides such as silicon monoxide, alumina and ceramic compounds may be used. The magnetic film material is iron-nickel alloy, e.g. Permalloy 75-85% Ni, preferably 83% Ni, 17% Fe, or cobalt-iron alloy.
GB535062A 1961-02-13 1962-02-12 Method to produce multiple layer magnetic elements Expired GB976102A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8904761A 1961-02-13 1961-02-13

Publications (1)

Publication Number Publication Date
GB976102A true GB976102A (en) 1964-11-25

Family

ID=22215320

Family Applications (1)

Application Number Title Priority Date Filing Date
GB535062A Expired GB976102A (en) 1961-02-13 1962-02-12 Method to produce multiple layer magnetic elements

Country Status (1)

Country Link
GB (1) GB976102A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2437667A1 (en) * 1977-09-30 1980-04-25 Iwasaki Shin Ichi MAGNETIC RECORDING MEDIUM
EP0789415A1 (en) * 1996-02-06 1997-08-13 Murata Manufacturing Co., Ltd. High-frequency circuit element and producing method therefor
EP0824260A1 (en) * 1996-08-14 1998-02-18 Read-Rite Corporation Method of forming a thin film magnetic structure having ferromagnetic and antiferromagnetic layers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2437667A1 (en) * 1977-09-30 1980-04-25 Iwasaki Shin Ichi MAGNETIC RECORDING MEDIUM
EP0789415A1 (en) * 1996-02-06 1997-08-13 Murata Manufacturing Co., Ltd. High-frequency circuit element and producing method therefor
US5976679A (en) * 1996-02-06 1999-11-02 Murata Manufacturing Co., Ltd. High-frequency circuit element
EP0824260A1 (en) * 1996-08-14 1998-02-18 Read-Rite Corporation Method of forming a thin film magnetic structure having ferromagnetic and antiferromagnetic layers

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