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GB9420264D0 - Chemical vapor deposition apparatus - Google Patents

Chemical vapor deposition apparatus

Info

Publication number
GB9420264D0
GB9420264D0 GB9420264A GB9420264A GB9420264D0 GB 9420264 D0 GB9420264 D0 GB 9420264D0 GB 9420264 A GB9420264 A GB 9420264A GB 9420264 A GB9420264 A GB 9420264A GB 9420264 D0 GB9420264 D0 GB 9420264D0
Authority
GB
United Kingdom
Prior art keywords
vapor deposition
chemical vapor
deposition apparatus
chemical
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9420264A
Other versions
GB2282825B (en
GB2282825A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB9420264D0 publication Critical patent/GB9420264D0/en
Publication of GB2282825A publication Critical patent/GB2282825A/en
Application granted granted Critical
Publication of GB2282825B publication Critical patent/GB2282825B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
GB9420264A 1993-10-13 1994-10-07 Chemical vapor deposition apparatus Expired - Fee Related GB2282825B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25542293A JPH07111244A (en) 1993-10-13 1993-10-13 Vapor phase crystal growth apparatus

Publications (3)

Publication Number Publication Date
GB9420264D0 true GB9420264D0 (en) 1994-11-23
GB2282825A GB2282825A (en) 1995-04-19
GB2282825B GB2282825B (en) 1997-09-03

Family

ID=17278546

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9420264A Expired - Fee Related GB2282825B (en) 1993-10-13 1994-10-07 Chemical vapor deposition apparatus

Country Status (3)

Country Link
JP (1) JPH07111244A (en)
FR (1) FR2711274A1 (en)
GB (1) GB2282825B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113913927A (en) * 2021-08-25 2022-01-11 华灿光电(苏州）有限公司 Metal organic chemical vapor deposition equipment and using method thereof

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936049A (en) * 1995-07-21 1997-02-07 Mitsubishi Electric Corp Vapor phase growth device and compound semiconductor device manufactured with said device
GB2308132A (en) * 1995-12-14 1997-06-18 Imperial College Depositing films on a substrate using an electric field
JPH11288893A (en) 1998-04-03 1999-10-19 Nec Corp Semiconductor manufacturing apparatus and manufacture of semiconductor device
EP1220303B1 (en) 2000-06-02 2004-09-08 Ibiden Co., Ltd. Hot plate unit
WO2003048413A1 (en) * 2001-12-03 2003-06-12 Ulvac, Inc. Mixer, and device and method for manufacturing thin-film
US20050272271A1 (en) * 2003-02-07 2005-12-08 Tokyo Electron Limited Semiconductor processing method for processing substrate to be processed and its apparatus
DE10320597A1 (en) * 2003-04-30 2004-12-02 Aixtron Ag Method and device for depositing semiconductor layers with two process gases, one of which is preconditioned
US20050011459A1 (en) * 2003-07-15 2005-01-20 Heng Liu Chemical vapor deposition reactor
US20050178336A1 (en) 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
JP5411410B2 (en) * 2007-03-30 2014-02-12 光洋サーモシステム株式会社 Continuous heat treatment equipment
US8216419B2 (en) 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US20090096349A1 (en) 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8668775B2 (en) 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
CN109585248B (en) * 2013-12-02 2021-04-20 应用材料公司 Method and apparatus for in-situ cleaning of a process chamber
JP6995073B2 (en) * 2019-03-12 2022-01-14 株式会社Kokusai Electric Manufacturing methods and programs for substrate processing equipment and semiconductor equipment
CN112992743B (en) * 2021-05-17 2021-09-17 北京北方华创微电子装备有限公司 Semiconductor process chamber and semiconductor process equipment

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6614657A (en) * 1966-02-11 1967-08-14
JPS591671A (en) * 1982-05-28 1984-01-07 Fujitsu Ltd Plasma cvd device
DE3780889T2 (en) * 1986-09-19 1993-03-18 Fujitsu Ltd X-RAY TRANSMITTING MEMBRANE AND PRODUCTION METHOD.
US4913929A (en) * 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
KR0145302B1 (en) * 1988-04-28 1998-08-17 카자마 젠쥬 Plasma processing method
JP2701363B2 (en) * 1988-09-12 1998-01-21 三菱電機株式会社 Semiconductor device manufacturing method and thin film forming apparatus used therefor
EP0423327B1 (en) * 1989-05-08 1994-03-30 Koninklijke Philips Electronics N.V. Apparatus and method for treating flat substrates under reduced pressure
JPH0687463B2 (en) * 1989-08-24 1994-11-02 株式会社東芝 Semiconductor vapor deposition equipment
KR100243784B1 (en) * 1990-12-05 2000-02-01 조셉 제이. 스위니 Passive shield for cvd wafer processing which provides front side edge exclusion and prevents backside depositions
JP3165938B2 (en) * 1993-06-24 2001-05-14 東京エレクトロン株式会社 Gas treatment equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113913927A (en) * 2021-08-25 2022-01-11 华灿光电(苏州）有限公司 Metal organic chemical vapor deposition equipment and using method thereof

Also Published As

Publication number Publication date
GB2282825B (en) 1997-09-03
GB2282825A (en) 1995-04-19
FR2711274A1 (en) 1995-04-21
JPH07111244A (en) 1995-04-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19981007