GB916703A - Improvements in or relating to ion sources - Google Patents
Improvements in or relating to ion sourcesInfo
- Publication number
- GB916703A GB916703A GB1761960A GB1761960A GB916703A GB 916703 A GB916703 A GB 916703A GB 1761960 A GB1761960 A GB 1761960A GB 1761960 A GB1761960 A GB 1761960A GB 916703 A GB916703 A GB 916703A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cathode
- parallel
- magnetic field
- slit
- arc chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/12—Ion sources; Ion guns using an arc discharge, e.g. of the duoplasmatron type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/04—Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
916,703. Ion sources. UNITED KINGDOM ATOMIC ENERGY AUTHORITY. May 2, 1961 [May 18, 1960], No. 17619/60. Class 39 (1). In an arc discharge ion source the directly heated cathode 3 is arranged within the arc chamber 1 parallel to the ion extraction slit 2 the region between the cathode and the slit being free of any interposed grids. A magnetic field may be set up parallel to the cathode, as shown between magnet poles 6, 7. An electron reflecting plete 8 may be fitted at each end of the cathode. Solid material is vaporized in the oven 9 by a heater winding 10, but gaseous source material may also be used. The ribbontype cathode 3 shown may be replaced by one of circular cross-section or by a helical coil. This last cathode is preferably used without a magnetic field. A flat cathode may be used which is of sufficient area effectively to divide the arc chamber into two parts, apertures in the cathode allowing the passage of gas. In one arrangement of this type the cathode consists of a plurality of parallel wires mounted between two transverse supporting bars. Dimensions are given.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1761960A GB916703A (en) | 1960-05-18 | 1960-05-18 | Improvements in or relating to ion sources |
FR862000A FR1289265A (en) | 1960-05-18 | 1961-05-16 | Ion source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1761960A GB916703A (en) | 1960-05-18 | 1960-05-18 | Improvements in or relating to ion sources |
Publications (1)
Publication Number | Publication Date |
---|---|
GB916703A true GB916703A (en) | 1963-01-23 |
Family
ID=10098308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1761960A Expired GB916703A (en) | 1960-05-18 | 1960-05-18 | Improvements in or relating to ion sources |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB916703A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4578589A (en) * | 1983-08-15 | 1986-03-25 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
US4760262A (en) * | 1987-05-12 | 1988-07-26 | Eaton Corporation | Ion source |
US4891525A (en) * | 1988-11-14 | 1990-01-02 | Eaton Corporation | SKM ion source |
-
1960
- 1960-05-18 GB GB1761960A patent/GB916703A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4578589A (en) * | 1983-08-15 | 1986-03-25 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
US4760262A (en) * | 1987-05-12 | 1988-07-26 | Eaton Corporation | Ion source |
US4891525A (en) * | 1988-11-14 | 1990-01-02 | Eaton Corporation | SKM ion source |
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