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GB8827542D0 - Positive-working photoresist composition - Google Patents

Positive-working photoresist composition

Info

Publication number
GB8827542D0
GB8827542D0 GB888827542A GB8827542A GB8827542D0 GB 8827542 D0 GB8827542 D0 GB 8827542D0 GB 888827542 A GB888827542 A GB 888827542A GB 8827542 A GB8827542 A GB 8827542A GB 8827542 D0 GB8827542 D0 GB 8827542D0
Authority
GB
United Kingdom
Prior art keywords
positive
photoresist composition
working photoresist
working
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB888827542A
Other versions
GB2212933B (en
GB2212933A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62299581A external-priority patent/JP2618940B2/en
Priority claimed from JP63002140A external-priority patent/JP2618947B2/en
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of GB8827542D0 publication Critical patent/GB8827542D0/en
Publication of GB2212933A publication Critical patent/GB2212933A/en
Application granted granted Critical
Publication of GB2212933B publication Critical patent/GB2212933B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/72Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/22Exposing sequentially with the same light pattern different positions of the same surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
GB8827542A 1987-11-27 1988-11-25 A positive-working photoresist composition Expired - Lifetime GB2212933B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62299581A JP2618940B2 (en) 1987-11-27 1987-11-27 Positive photoresist composition
JP63002140A JP2618947B2 (en) 1988-01-08 1988-01-08 Positive photoresist composition

Publications (3)

Publication Number Publication Date
GB8827542D0 true GB8827542D0 (en) 1988-12-29
GB2212933A GB2212933A (en) 1989-08-02
GB2212933B GB2212933B (en) 1991-10-16

Family

ID=26335464

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8827542A Expired - Lifetime GB2212933B (en) 1987-11-27 1988-11-25 A positive-working photoresist composition

Country Status (3)

Country Link
KR (1) KR910004844B1 (en)
DE (1) DE3839906A1 (en)
GB (1) GB2212933B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
CA2042735A1 (en) * 1990-05-25 1991-11-26 Mark A. Spak Image reversal negative working photoresist
JPH04306658A (en) * 1990-11-28 1992-10-29 Hoechst Celanese Corp Positive photoresist composition
JPH0627655A (en) * 1990-11-28 1994-02-04 Hoechst Celanese Corp Positive-type photoresist composition
DE4111444A1 (en) * 1991-04-09 1992-10-15 Hoechst Ag NAPHTHOCHINONDIAZIDE-SULFONIC ACID MIXTESTER CONTAINING MIXTURE AND PRODUCTION OF RADIATION-SENSITIVE RECORDING MATERIAL THEREFOR
KR950000482B1 (en) * 1991-04-30 1995-01-20 가부시키가이샤 도시바 Resist for patterning
US5362599A (en) * 1991-11-14 1994-11-08 International Business Machines Corporations Fast diazoquinone positive resists comprising mixed esters of 4-sulfonate and 5-sulfonate compounds
JP2935223B2 (en) * 1992-04-14 1999-08-16 東京応化工業株式会社 Method for producing resist pattern forming material and method for forming tantalum pattern
US5332647A (en) * 1992-08-26 1994-07-26 Tokyo Ohka Kogyo Co., Ltd. Positive-working quinone diazide composition containing N,N',N"-substituted isocyanurate compound and associated article
IT1275432B (en) * 1995-05-19 1997-08-07 Plurimetal Srl PHOTOSENSITIVE COMPOSITIONS FOR OFFSET PRINTING WITH CONTROLLED ACIDITY
KR100323831B1 (en) * 1999-03-30 2002-02-07 윤종용 Photoresist composition, preparation method thereof and method for forming pattern in semiconductor processing using the same
KR100318092B1 (en) * 1999-08-05 2001-12-22 대한민국(관리청:특허청장, 승계청:산업자원부 기술표준원장) Naphtoquinone-diazide Ester Photosensitive Material for PS Plate Use

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4348471A (en) * 1981-06-15 1982-09-07 Polychrome Corporation Positive acting composition yielding pre-development high visibility image after radiation exposure comprising acid free novolak, diazo oxide and acid sensitive dyestuff
DE3274354D1 (en) * 1981-06-22 1987-01-08 Hunt Chem Corp Philip A Novolak resin and a positive photoresist composition containing the same
DE3127754A1 (en) * 1981-07-14 1983-02-03 Hoechst Ag, 6000 Frankfurt LIGHT SENSITIVE MIXTURE BASED ON O-NAPHTHOCHINONDIAZIDES AND LIGHT SENSITIVE COPY MATERIAL MADE THEREOF
JPS61185741A (en) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd Positive type photoresist composition
JPH0650396B2 (en) * 1985-08-09 1994-06-29 東京応化工業株式会社 Positive photoresist composition
JP2622267B2 (en) * 1988-03-23 1997-06-18 日立化成工業株式会社 Photosensitive resin composition

Also Published As

Publication number Publication date
KR910004844B1 (en) 1991-07-13
GB2212933B (en) 1991-10-16
GB2212933A (en) 1989-08-02
DE3839906A1 (en) 1989-06-08
KR890008606A (en) 1989-07-12

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20081124