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GB8718725D0 - Growing single crystal of compound semiconductor - Google Patents

Growing single crystal of compound semiconductor

Info

Publication number
GB8718725D0
GB8718725D0 GB878718725A GB8718725A GB8718725D0 GB 8718725 D0 GB8718725 D0 GB 8718725D0 GB 878718725 A GB878718725 A GB 878718725A GB 8718725 A GB8718725 A GB 8718725A GB 8718725 D0 GB8718725 D0 GB 8718725D0
Authority
GB
United Kingdom
Prior art keywords
single crystal
compound semiconductor
growing single
growing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878718725A
Other versions
GB2200576A (en
GB2200576B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of GB8718725D0 publication Critical patent/GB8718725D0/en
Publication of GB2200576A publication Critical patent/GB2200576A/en
Application granted granted Critical
Publication of GB2200576B publication Critical patent/GB2200576B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB8718725A 1987-02-06 1987-08-07 Method of growing a single crystal of a semi-conductor compound and apparatus therefor. Expired - Fee Related GB2200576B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2461987A JPS63195187A (en) 1987-02-06 1987-02-06 Crystal growth apparatus for compound semiconductor

Publications (3)

Publication Number Publication Date
GB8718725D0 true GB8718725D0 (en) 1987-09-16
GB2200576A GB2200576A (en) 1988-08-10
GB2200576B GB2200576B (en) 1991-01-16

Family

ID=12143162

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8718725A Expired - Fee Related GB2200576B (en) 1987-02-06 1987-08-07 Method of growing a single crystal of a semi-conductor compound and apparatus therefor.

Country Status (3)

Country Link
JP (1) JPS63195187A (en)
DE (1) DE3726713A1 (en)
GB (1) GB2200576B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537921A (en) * 2022-10-24 2022-12-30 广东先导微电子科技有限公司 Synthesis method of indium phosphide

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA956867A (en) * 1970-12-04 1974-10-29 Albert G. Fischer Method and apparatus for forming crystalline bodies of a semiconductor material
DE2317797B2 (en) * 1973-04-09 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of gallium phosphide
FR2300616A1 (en) * 1975-02-12 1976-09-10 Radiotechnique Compelec SEMICONDUCTOR COMPOUNDS SYNTHESIS PROCESS

Also Published As

Publication number Publication date
JPS63195187A (en) 1988-08-12
JPH0432800B2 (en) 1992-06-01
DE3726713A1 (en) 1988-08-18
GB2200576A (en) 1988-08-10
GB2200576B (en) 1991-01-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990807