[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

GB878441A - Method of treating the surface of semi-conductor elements - Google Patents

Method of treating the surface of semi-conductor elements

Info

Publication number
GB878441A
GB878441A GB12380/60A GB1238060A GB878441A GB 878441 A GB878441 A GB 878441A GB 12380/60 A GB12380/60 A GB 12380/60A GB 1238060 A GB1238060 A GB 1238060A GB 878441 A GB878441 A GB 878441A
Authority
GB
United Kingdom
Prior art keywords
electrolyte
electrode
april
wafer
raised
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12380/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
BBC Brown Boveri France SA
Original Assignee
Brown Boveri und Cie AG Switzerland
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brown Boveri und Cie AG Switzerland, BBC Brown Boveri France SA filed Critical Brown Boveri und Cie AG Switzerland
Publication of GB878441A publication Critical patent/GB878441A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

878,441. Etching semi-conductors electrolytically. BROWN, BOVERI & CO. Ltd. April 7, 1960 [April 8, 1959], No. 12380/60. Class 41. The surface of a semiconductor e.g. of silicon, is cleaned by electrolytic pickling and is subsequently oxidized using as electrolyte a solution of a substance releasing oxygen by electrolysis, and after pickling the current density is raised to form the oxide coating. By this means pockets of electrolyte under the oxide coating are avoided. A suitable electrolyte contains ammonium peroxide disulphate, boron oxide and sulphuric acid, used first at a current density of 0.5 A.S. cm. and then raised to 1 A.S. cm. A suitable apparatus consists of a vessel G containing electrolyte E, and having an opening at its base against which a wafer of silicon H is pressed by an electrode K2. A plunger of insulating material S is provided with a gold electrode K1 which covers the central area of the wafer, leaving an annular area Z to be treated. A gold annular electrode R acts as cathode.
GB12380/60A 1959-04-08 1960-04-07 Method of treating the surface of semi-conductor elements Expired GB878441A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH7173959A CH366103A (en) 1959-04-08 1959-04-08 Process for the surface treatment of semiconductor bodies

Publications (1)

Publication Number Publication Date
GB878441A true GB878441A (en) 1961-09-27

Family

ID=4531245

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12380/60A Expired GB878441A (en) 1959-04-08 1960-04-07 Method of treating the surface of semi-conductor elements

Country Status (5)

Country Link
BE (1) BE589201A (en)
CH (1) CH366103A (en)
DE (1) DE1129795B (en)
GB (1) GB878441A (en)
NL (2) NL121808C (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1556778A (en) * 1977-03-11 1979-11-28 Post Office Preparation of semiconductor surfaces

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2653085A (en) * 1952-08-09 1953-09-22 Westinghouse Electric Corp Etching solution and process

Also Published As

Publication number Publication date
NL121808C (en)
CH366103A (en) 1962-12-15
BE589201A (en) 1960-07-18
DE1129795B (en) 1962-05-17
NL249127A (en)

Similar Documents

Publication Publication Date Title
Damjanovic et al. The role of hydrogen peroxide in oxygen reduction at platinum in H 2 SO 4 solution
GB694022A (en) Process for the production of germanium elements for use in the electrical arts
US2974075A (en) Treatment of semiconductive devices
GB883603A (en) Improvements in or relating to the surface treatment of silicon carbide
US3010885A (en) Method for electrolytically etching and thereafter anodically oxidizing an essentially monocrystalline semiconductor body having a p-n junction
GB878441A (en) Method of treating the surface of semi-conductor elements
GB1070190A (en) Electrolytic polishing of metals
Shiobara et al. Potentiostatic study on the anodic behaviour of iron-nickel alloys
ATE32106T1 (en) PROCESS FOR PRODUCTION OF ACTIVE ALUMINUM OXIDE.
ES8106337A1 (en) Material for electrodes and electrolytic cells with anodes consisting of this material.
JPS5419649A (en) Wafer holding jig for electrtolytic plating
GB969969A (en) Improvements in and relating to the manufacture of semiconductor devices
GB1449106A (en) Electrolytic dissolver
GB873484A (en) Improvements in and relating to the manufacture of semiconductive devices
US3264201A (en) Method of producing a silicon semiconductor device
GB579824A (en) Improvements in silicon-crystal rectifiers
GB728940A (en) Improvements in and relating to methods of making broad area semi-conductor devices
JPS51114875A (en) Semiconductor device manufacturing method
GB973820A (en) An improved method of separating hydrogen isotopes
JPS55125299A (en) Electrochemical sand setting method for aluminum sheet
GB979125A (en) Fuel cell
GB1017652A (en) Improvements in or relating to semi-conductor devices
JPS5669374A (en) Dry etching method
JPS5585700A (en) Exfoliation method for copper
GB1176928A (en) Process for the Oxidation of Gallium-Arsenide