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GB8606484D0 - Field effect pressure sensor - Google Patents

Field effect pressure sensor

Info

Publication number
GB8606484D0
GB8606484D0 GB868606484A GB8606484A GB8606484D0 GB 8606484 D0 GB8606484 D0 GB 8606484D0 GB 868606484 A GB868606484 A GB 868606484A GB 8606484 A GB8606484 A GB 8606484A GB 8606484 D0 GB8606484 D0 GB 8606484D0
Authority
GB
United Kingdom
Prior art keywords
pressure sensor
field effect
effect pressure
field
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB868606484A
Other versions
GB2174839A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of GB8606484D0 publication Critical patent/GB8606484D0/en
Publication of GB2174839A publication Critical patent/GB2174839A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
GB08606484A 1985-03-15 1986-03-17 Pressure sensitive field effect transistor Withdrawn GB2174839A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60052602A JPS61222178A (en) 1985-03-15 1985-03-15 Field effect type pressure sensor

Publications (2)

Publication Number Publication Date
GB8606484D0 true GB8606484D0 (en) 1986-04-23
GB2174839A GB2174839A (en) 1986-11-12

Family

ID=12919333

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08606484A Withdrawn GB2174839A (en) 1985-03-15 1986-03-17 Pressure sensitive field effect transistor

Country Status (3)

Country Link
JP (1) JPS61222178A (en)
DE (1) DE3608633A1 (en)
GB (1) GB2174839A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222179A (en) * 1985-03-27 1986-10-02 Nec Corp Semiconductor device
DE3635462A1 (en) * 1985-10-21 1987-04-23 Sharp Kk FIELD EFFECT PRESSURE SENSOR
DE4339190B4 (en) * 1992-11-16 2006-04-13 Denso Corp., Kariya Semiconductor accelerometer
JP3303430B2 (en) * 1993-05-21 2002-07-22 株式会社デンソー FET type acceleration sensor
SE9601336L (en) * 1996-04-10 1997-10-11 Samba Sensors Ab Apparatus for measuring pressure
JP3053007B2 (en) * 1997-07-28 2000-06-19 日本電気株式会社 Fingerprint sensor
JP3102395B2 (en) 1997-11-27 2000-10-23 日本電気株式会社 Fingerprint detection device
JP4655083B2 (en) * 2007-11-16 2011-03-23 セイコーエプソン株式会社 Micro electromechanical device
US8037771B2 (en) * 2009-05-13 2011-10-18 Lsi Corporation Electronic pressure-sensing device
JP5024738B2 (en) * 2010-10-18 2012-09-12 セイコーエプソン株式会社 Micro electromechanical device
US8592888B2 (en) 2011-08-09 2013-11-26 Nokia Corporation Field effect transistor for sensing deformation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1128318A (en) * 1965-10-28 1968-09-25 Westinghouse Electric Corp Electro-mechanical transducer
US3436492A (en) * 1966-01-17 1969-04-01 Northern Electric Co Field effect electroacoustic transducer
DE1278520B (en) * 1966-03-03 1968-09-26 Siemens Ag Electromechanical converter, especially microphone, based on MOS transistors
US3440873A (en) * 1967-05-23 1969-04-29 Corning Glass Works Miniature pressure transducer
US4035822A (en) * 1975-03-14 1977-07-12 Rca Corporation Pressure sensitive field effect device
US3978508A (en) * 1975-03-14 1976-08-31 Rca Corporation Pressure sensitive field effect device
EP0087264A3 (en) * 1982-02-19 1984-07-11 THE GENERAL ELECTRIC COMPANY, p.l.c. Force sensors

Also Published As

Publication number Publication date
JPS61222178A (en) 1986-10-02
DE3608633A1 (en) 1986-09-18
GB2174839A (en) 1986-11-12

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)