GB8529847D0 - Producing silicon nitride - Google Patents

Producing silicon nitride

Info

Publication number: GB8529847D0
Authority: GB; United Kingdom
Prior art keywords: silicon nitride; producing silicon; producing; nitride; silicon
Prior art date: 1984-12-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

GB858529847A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tateho Chemical Industries Co Ltd

Original Assignee

Tateho Chemical Industries Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-12-14

Filing date

1985-12-04

Publication date

1986-01-15

1985-12-04 Application filed by Tateho Chemical Industries Co Ltd filed Critical Tateho Chemical Industries Co Ltd

1986-01-15 Publication of GB8529847D0 publication Critical patent/GB8529847D0/en

1986-06-18 Publication of GB2168333A publication Critical patent/GB2168333A/en

1988-12-07 Application granted granted Critical

1988-12-07 Publication of GB2168333B publication Critical patent/GB2168333B/en

Status Expired legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Carbon And Carbon Compounds (AREA)

GB08529847A 1984-12-14 1985-12-04 A method for continuously producing silicon nitride and silicon carbide Expired GB2168333B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59264814A JPS61146797A (en)	1984-12-14	1984-12-14	Continuous manufacture of silicon nitride and silicon carbide

Publications (3)

Publication Number	Publication Date
GB8529847D0 true GB8529847D0 (en)	1986-01-15
GB2168333A GB2168333A (en)	1986-06-18
GB2168333B GB2168333B (en)	1988-12-07

Family

ID=17408581

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08529847A Expired GB2168333B (en)	1984-12-14	1985-12-04	A method for continuously producing silicon nitride and silicon carbide

Country Status (4)

Country	Link
JP (1)	JPS61146797A (en)
DE (1)	DE3543752A1 (en)
FR (1)	FR2574775B1 (en)
GB (1)	GB2168333B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63502823A (en) *	1986-03-14	1988-10-20	コモンウェルス・サイエンティフィック・アンド・インダストリアル・リサーチ・オーガニゼイション	Ceramic product manufacturing method
US4873069A (en) *	1987-03-09	1989-10-10	American Matrix, Inc.	Method for the preparation of silicon carbide whiskers
DE3906986C1 (en) *	1989-03-04	1990-07-19	Linn High Therm Gmbh, 8459 Hirschbach, De
JP2517854B2 (en) *	1991-08-16	1996-07-24	工業技術院長	Fibrous silicon compound continuous production method
JP2002321156A (en) *	2001-04-19	2002-11-05	Minebea Co Ltd	Combined polishing and washing method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3754076A (en) *	1970-10-30	1973-08-21	Univ Utah	Production of silicon carbide from rice hulls
US3855395A (en) *	1972-09-06	1974-12-17	Univ Utah	Production of silicon nitride from rice hulls
JPS53133600A (en) *	1977-04-28	1978-11-21	Onoda Cement Co Ltd	Production of silicon nitride
US4283375A (en) *	1980-01-28	1981-08-11	Great Lakes Carbon Corporation	Production of SiC whiskers
US4248844A (en) *	1980-01-28	1981-02-03	Great Lakes Carbon Corporation	Production of SiC from rice hulls and silica
US4284612A (en) *	1980-01-28	1981-08-18	Great Lakes Carbon Corporation	Preparation of SiC whiskers
EP0096070A4 (en) *	1981-12-16	1987-10-12	Atlantic Richfield Co	Continuous silicon carbide whisker production.
JPS6052120B2 (en) *	1982-06-04	1985-11-18	タテホ化学工業株式会社	Silicon carbide manufacturing method
JPS5935009A (en) *	1982-08-19	1984-02-25	Toyota Central Res & Dev Lab Inc	Preparation of silicon nitride
JPS59128300A (en) *	1982-12-28	1984-07-24	Tateho Kagaku Kogyo Kk	Manufacture of silicon carbide whisker after recovering silicon nitride whisker
US4613490A (en) *	1984-05-08	1986-09-23	Mitsubishi Gas Chemical Company, Inc.	Process for preparing silicon nitride, silicon carbide or fine powdery mixture thereof

1984
- 1984-12-14 JP JP59264814A patent/JPS61146797A/en active Granted
1985
- 1985-12-04 GB GB08529847A patent/GB2168333B/en not_active Expired
- 1985-12-11 DE DE19853543752 patent/DE3543752A1/en active Granted
- 1985-12-11 FR FR858518332A patent/FR2574775B1/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
GB2168333A (en)	1986-06-18
DE3543752C2 (en)	1989-01-26
FR2574775A1 (en)	1986-06-20
JPS61146797A (en)	1986-07-04
JPH0227318B2 (en)	1990-06-15
DE3543752A1 (en)	1986-07-10
FR2574775B1 (en)	1990-10-12
GB2168333B (en)	1988-12-07

Publication	Publication Date	Title
EP0167306A3 (en)	1987-04-15	Silicon nitride-containing ceramics
GB8422876D0 (en)	1984-10-17	Silicon implant devices
GB8601163D0 (en)	1986-02-19	Forming silicon regions
GB8424354D0 (en)	1984-10-31	Forming silicon carbide
GB8508932D0 (en)	1985-05-09	Semiconductor
GB8524283D0 (en)	1985-11-06	Halosilanes & halosiloxanes
GB8531175D0 (en)	1986-01-29	Semiconductor
EP0158698A3 (en)	1987-05-27	Method of manufacturing b type silicon nitride whiskers
GB8518798D0 (en)	1985-08-29	Forming semiconductor crystal
EP0255327A3 (en)	1988-08-31	Cubic boron nitride manufacture
GB8428898D0 (en)	1984-12-27	Silicon
GB2105316B (en)	1985-05-09	Porous silicon nitride
GB8603597D0 (en)	1986-03-19	Silicon nitride powder
GB8629496D0 (en)	1987-01-21	Silicon carbide
GB8529898D0 (en)	1986-01-15	Making hollow wafer
GB8504109D0 (en)	1985-03-20	Silicon nitride sintered body
GB2168481B (en)	1988-07-06	Silicon transducer
GB8506730D0 (en)	1985-04-17	Forming silicon film
GB8529847D0 (en)	1986-01-15	Producing silicon nitride
GB8610243D0 (en)	1986-05-29	Antigens
GB8525931D0 (en)	1985-11-27	Silicon nitride containing articles
GB8602971D0 (en)	1986-03-12	Tool formation
ZA858034B (en)	1986-06-25	Antigens
GB8724115D0 (en)	1987-11-18	First & second screw-threaded elements
GB8505349D0 (en)	1985-04-03	Producing silicon nitride sintered products

Legal Events

Date	Code	Title	Description
1996-07-31	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 19951204