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GB8524042D0 - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
GB8524042D0
GB8524042D0 GB858524042A GB8524042A GB8524042D0 GB 8524042 D0 GB8524042 D0 GB 8524042D0 GB 858524042 A GB858524042 A GB 858524042A GB 8524042 A GB8524042 A GB 8524042A GB 8524042 D0 GB8524042 D0 GB 8524042D0
Authority
GB
United Kingdom
Prior art keywords
data line
data lines
storage means
redundant
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB858524042A
Other versions
GB2165971A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8524042D0 publication Critical patent/GB8524042D0/en
Publication of GB2165971A publication Critical patent/GB2165971A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Hardware Redundancy (AREA)
  • Static Random-Access Memory (AREA)

Abstract

In a multi-bit semiconductor memory having a redundant memory YR-ARY, any faulty data line CD is replaced with a redundant data line. To decrease the number of redundant data lines required when a plurality of data lines are selected at once, the semiconductor memory is furnished therein with first storage means (MMo Fig. 3) for forming signals necessary for an address comparing operation in an address comparing circuit (ACo-ACn) and also second storage means (DM1...DM3...) for forming signals indicative of data line positions to be remedied. When a faulty address has been detected as the result of the address comparing operation, the second storage means is referred to, and the data line indicated by the second storage means is replaced with the redundant data line. This arrangement can decrease the number of the redundant data lines when compared with an arrangement wherein all the data lines to be simultaneously selected are replaced with redundant data lines. <IMAGE>
GB08524042A 1984-10-19 1985-09-30 A semiconductor memory Withdrawn GB2165971A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59218480A JPS6199999A (en) 1984-10-19 1984-10-19 Semiconductor storage device

Publications (2)

Publication Number Publication Date
GB8524042D0 true GB8524042D0 (en) 1985-11-06
GB2165971A GB2165971A (en) 1986-04-23

Family

ID=16720587

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08524042A Withdrawn GB2165971A (en) 1984-10-19 1985-09-30 A semiconductor memory

Country Status (4)

Country Link
JP (1) JPS6199999A (en)
KR (1) KR860003603A (en)
DE (1) DE3537015A1 (en)
GB (1) GB2165971A (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6238599A (en) * 1985-08-13 1987-02-19 Mitsubishi Electric Corp Semiconductor memory device
US5146574A (en) * 1989-06-27 1992-09-08 Sf2 Corporation Method and circuit for programmable selecting a variable sequence of element using write-back
US5134616A (en) * 1990-02-13 1992-07-28 International Business Machines Corporation Dynamic ram with on-chip ecc and optimized bit and word redundancy
US5233618A (en) * 1990-03-02 1993-08-03 Micro Technology, Inc. Data correcting applicable to redundant arrays of independent disks
US5140592A (en) * 1990-03-02 1992-08-18 Sf2 Corporation Disk array system
US5212785A (en) * 1990-04-06 1993-05-18 Micro Technology, Inc. Apparatus and method for controlling data flow between a computer and memory devices
US5388243A (en) * 1990-03-09 1995-02-07 Mti Technology Corporation Multi-sort mass storage device announcing its active paths without deactivating its ports in a network architecture
US5325497A (en) * 1990-03-29 1994-06-28 Micro Technology, Inc. Method and apparatus for assigning signatures to identify members of a set of mass of storage devices
US5233692A (en) * 1990-04-06 1993-08-03 Micro Technology, Inc. Enhanced interface permitting multiple-byte parallel transfers of control information and data on a small computer system interface (SCSI) communication bus and a mass storage system incorporating the enhanced interface
US5214778A (en) * 1990-04-06 1993-05-25 Micro Technology, Inc. Resource management in a multiple resource system
US5265054A (en) * 1990-12-14 1993-11-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with precharged redundancy multiplexing
EP0490680B1 (en) * 1990-12-14 1996-10-02 STMicroelectronics, Inc. A semiconductor memory with multiplexed redundancy
EP0514664A3 (en) * 1991-05-20 1993-05-26 International Business Machines Corporation Dynamic random access memory with a redundancy decoder
KR940008213B1 (en) * 1991-12-31 1994-09-08 현대전자산업 주식회사 Input/outout select circuit of column repair
US5295102A (en) * 1992-01-31 1994-03-15 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with improved redundant sense amplifier control
US5268866A (en) * 1992-03-02 1993-12-07 Motorola, Inc. Memory with column redundancy and localized column redundancy control signals
KR100324013B1 (en) * 1994-04-27 2002-05-13 박종섭 Data transfer method of semiconductor device and device thereof
US5608678A (en) * 1995-07-31 1997-03-04 Sgs-Thomson Microelectronics, Inc. Column redundancy of a multiple block memory architecture
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
US5771195A (en) * 1995-12-29 1998-06-23 Sgs-Thomson Microelectronics, Inc. Circuit and method for replacing a defective memory cell with a redundant memory cell
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US5612918A (en) * 1995-12-29 1997-03-18 Sgs-Thomson Microelectronics, Inc. Redundancy architecture
US6037799A (en) * 1995-12-29 2000-03-14 Stmicroelectronics, Inc. Circuit and method for selecting a signal
US6259309B1 (en) * 1999-05-05 2001-07-10 International Business Machines Corporation Method and apparatus for the replacement of non-operational metal lines in DRAMS
JP4900310B2 (en) * 2008-04-17 2012-03-21 富士通セミコンダクター株式会社 Semiconductor memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2629893A1 (en) * 1975-07-03 1977-01-20 Texas Instruments Inc CELL ADDRESSABLE MATRIX
DE3043651A1 (en) * 1979-11-19 1981-08-27 Texas Instruments Inc., 75222 Dallas, Tex. MOS read-write memory with spare cells for malfunction handling - has spare cells accessed by inbuilt ROM stages and has read differential amplifier in each column
US4358833A (en) * 1980-09-30 1982-11-09 Intel Corporation Memory redundancy apparatus for single chip memories
JPS58130495A (en) * 1982-01-29 1983-08-03 Toshiba Corp Semiconductor storage device
US4462091A (en) * 1982-02-26 1984-07-24 International Business Machines Corporation Word group redundancy scheme
US4485459A (en) * 1982-09-20 1984-11-27 Fairchild Camera & Instrument Corp. Redundant columns for byte wide memories
JPH0670880B2 (en) * 1983-01-21 1994-09-07 株式会社日立マイコンシステム Semiconductor memory device
JPS59151398A (en) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp Semiconductor storage device
DE3311427A1 (en) * 1983-03-29 1984-10-04 Siemens AG, 1000 Berlin und 8000 München INTEGRATED DYNAMIC WRITE-READ MEMORY

Also Published As

Publication number Publication date
DE3537015A1 (en) 1986-05-15
JPS6199999A (en) 1986-05-19
GB2165971A (en) 1986-04-23
KR860003603A (en) 1986-05-28

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)