GB8310669D0 - Semiconductor integrated circuit structure - Google Patents

Semiconductor integrated circuit structure

Info

Publication number: GB8310669D0
Authority: GB; United Kingdom
Prior art keywords: integrated circuit; semiconductor integrated; circuit structure; semiconductor; integrated
Prior art date: 1982-04-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

GB838310669A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee

Western Electric Co Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-04-23

Filing date

1983-04-20

Publication date

1983-05-25

1983-04-20 Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc

1983-05-25 Publication of GB8310669D0 publication Critical patent/GB8310669D0/en

1983-11-02 Publication of GB2118777A publication Critical patent/GB2118777A/en

Status Withdrawn legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Manufacturing & Machinery (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Formation Of Insulating Films (AREA)

GB08310669A 1982-04-23 1983-04-20 Insulation layer between metallization in a semiconductor integrated circuit structure Withdrawn GB2118777A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US37105582A	1982-04-23	1982-04-23

Publications (2)

Publication Number	Publication Date
GB8310669D0 true GB8310669D0 (en)	1983-05-25
GB2118777A GB2118777A (en)	1983-11-02

Family

ID=23462292

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08310669A Withdrawn GB2118777A (en)	1982-04-23	1983-04-20	Insulation layer between metallization in a semiconductor integrated circuit structure

Country Status (5)

Country	Link
EP (1)	EP0105915A1 (en)
ES (1)	ES8403666A1 (en)
GB (1)	GB2118777A (en)
IT (1)	IT1170132B (en)
WO (1)	WO1983003923A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60198847A (en) *	1984-03-23	1985-10-08	Nec Corp	Semiconductor device and manufacture thereof
FR2583220B1 (en) *	1985-06-11	1987-08-07	Thomson Csf	PROCESS FOR PRODUCING AT LEAST TWO METALLIZATIONS OF A SEMICONDUCTOR COMPONENT COVERED WITH A DIELECTRIC LAYER AND COMPONENT OBTAINED BY THIS DIELECTRIC
US4654269A (en) *	1985-06-21	1987-03-31	Fairchild Camera & Instrument Corp.	Stress relieved intermediate insulating layer for multilayer metalization
JPH088265B2 (en) *	1988-09-13	1996-01-29	株式会社東芝	Compound semiconductor device and manufacturing method thereof
US5424570A (en) *	1992-01-31	1995-06-13	Sgs-Thomson Microelectronics, Inc.	Contact structure for improving photoresist adhesion on a dielectric layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3882530A (en) *	1971-12-09	1975-05-06	Us Government	Radiation hardening of mos devices by boron
US4005455A (en) *	1974-08-21	1977-01-25	Intel Corporation	Corrosive resistant semiconductor interconnect pad
JPS5171068A (en) *	1974-12-16	1976-06-19	Matsushita Electronics Corp	HANDOTA ISOCHI
JPS54147789A (en) *	1978-05-11	1979-11-19	Matsushita Electric Ind Co Ltd	Semiconductor divice and its manufacture
JPS6046546B2 (en) *	1980-06-16	1985-10-16	日本電気株式会社	Manufacturing method of semiconductor device
JPS577153A (en) *	1980-06-16	1982-01-14	Nec Corp	Preparation of semiconductor device
JPS5727047A (en) *	1980-07-25	1982-02-13	Seiko Epson Corp	Semiconductor device
JPS57113235A (en) *	1980-12-29	1982-07-14	Nec Corp	Semiconductor device

1983
- 1983-04-07 WO PCT/US1983/000493 patent/WO1983003923A1/en not_active Application Discontinuation
- 1983-04-07 EP EP83901662A patent/EP0105915A1/en not_active Withdrawn
- 1983-04-20 GB GB08310669A patent/GB2118777A/en not_active Withdrawn
- 1983-04-20 IT IT20700/83A patent/IT1170132B/en active
- 1983-04-21 ES ES521708A patent/ES8403666A1/en not_active Expired

Also Published As

Publication number	Publication date
ES521708A0 (en)	1984-04-01
IT8320700A0 (en)	1983-04-20
EP0105915A1 (en)	1984-04-25
ES8403666A1 (en)	1984-04-01
WO1983003923A1 (en)	1983-11-10
GB2118777A (en)	1983-11-02
IT1170132B (en)	1987-06-03

Publication	Publication Date	Title
GB8500176D0 (en)	1985-02-13	Semiconductor integrated circuit
DE3368350D1 (en)	1987-01-22	Semiconductor integrated circuit capacitor
GB8421200D0 (en)	1984-09-26	Semiconductor integrated circuit
DE3279013D1 (en)	1988-10-13	Semiconductor integrated circuit
DE3380709D1 (en)	1989-11-16	Mis semiconductor integrated circuit
DE3470265D1 (en)	1988-05-05	Semiconductor integrated circuit device
GB8324163D0 (en)	1983-10-12	Semiconductor integrated circuit device
DE3380242D1 (en)	1989-08-24	Semiconductor integrated circuit device
GB8619512D0 (en)	1986-09-24	Semiconductor integrated circuit
DE3475366D1 (en)	1988-12-29	Master-slice-type semiconductor integrated circuit device
GB2091459B (en)	1985-09-11	Semiconductor integrated circuit
GB2126782B (en)	1986-06-25	Semiconductor integrated circuit devices
GB8329430D0 (en)	1983-12-07	Semiconductor circuit element
DE3272424D1 (en)	1986-09-11	Semiconductor integrated circuit
GB2074788B (en)	1985-02-27	Semiconductor integrated circuit
GB8306917D0 (en)	1983-04-20	Semiconductor integrated circuit device
DE3264963D1 (en)	1985-09-05	Semiconductor integrated circuit
DE3380105D1 (en)	1989-07-27	Semiconductor integrated circuit device
GB2084397B (en)	1984-11-14	Semiconductor integrated circuit
DE3380891D1 (en)	1989-12-28	Semiconductor integrated circuit
DE3174824D1 (en)	1986-07-17	Semiconductor integrated circuit
GB8431534D0 (en)	1985-01-23	Semiconductor integrated circuit
GB8310669D0 (en)	1983-05-25	Semiconductor integrated circuit structure
GB2154060B (en)	1986-05-14	Semiconductor integrated circuit devices
DE3167256D1 (en)	1985-01-03	Semiconductor integrated circuit

Legal Events

Date	Code	Title	Description
1984-08-30	WAP	Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)