GB751408A - Semi-conductor devices and method of making same - Google Patents
Semi-conductor devices and method of making sameInfo
- Publication number
- GB751408A GB751408A GB12152/54A GB1215254A GB751408A GB 751408 A GB751408 A GB 751408A GB 12152/54 A GB12152/54 A GB 12152/54A GB 1215254 A GB1215254 A GB 1215254A GB 751408 A GB751408 A GB 751408A
- Authority
- GB
- United Kingdom
- Prior art keywords
- antimony
- junctions
- indium
- mixture
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052787 antimony Inorganic materials 0.000 abstract 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 6
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052716 thallium Inorganic materials 0.000 abstract 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
751,408. Coating with metals. RADIO CORPORATION OF AMERICA. April 27, 1954 [May 25, 1953], No. 12152/54. Class 82(2). [Also in Group XXXVI] A body consisting of a mixture of acceptor and donor material is fused to a semiconductor body of one conductivity type, to produce a succession of PN junctions. Fig. 2 shows a P type germanium body 3 on which a pellet 14<SP>1</SP> of indium and antimony has been heated at 600-700C. for five minutes in a non-oxidising atmosphere to diffuse the impurities into the germanium. The proportion of indium to antimony may vary between 1 : 9 and 9: 1. This results in the formation of an N type region 20 and a P type region 16 so that two PN junctions are formed. The difference in segregation coefficient has the greater effect at temperatures below about 700C., while the diffusion coefficient difference is predominant at about 850C. In place of indium and antimony, the mixture may consist of thallium and antimony, or bismuth and thallium, or in the case of an N-type body, of gallium and antimony, gallium and arsenic or aluminium and antimony. The spacing between the two PN junctions may be controlled by varying the heating and for relative proportions of the impurities materials of the mixture.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US751408XA | 1953-05-25 | 1953-05-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB751408A true GB751408A (en) | 1956-06-27 |
Family
ID=22123818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB12152/54A Expired GB751408A (en) | 1953-05-25 | 1954-04-27 | Semi-conductor devices and method of making same |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1103544A (en) |
| GB (1) | GB751408A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2836523A (en) * | 1956-08-02 | 1958-05-27 | Bell Telephone Labor Inc | Manufacture of semiconductive devices |
| US2899343A (en) * | 1954-05-27 | 1959-08-11 | Jsion | |
| US2938819A (en) * | 1958-06-27 | 1960-05-31 | Ibm | Intermetallic semiconductor device manufacturing |
| US2943006A (en) * | 1957-05-06 | 1960-06-28 | Westinghouse Electric Corp | Diffused transistors and processes for making the same |
| US2973290A (en) * | 1956-07-05 | 1961-02-28 | Gen Electric Co Ltd | Production of semi-conductor bodies by impurity diffusion through station ary interface |
| US2977256A (en) * | 1956-08-16 | 1961-03-28 | Gen Electric | Semiconductor devices and methods of making same |
| DE1116829B (en) * | 1960-06-08 | 1961-11-09 | Telefunken Patent | Method for manufacturing a semiconductor device |
| US3029170A (en) * | 1955-09-02 | 1962-04-10 | Gen Electric Co Ltd | Production of semi-conductor bodies |
| US3111611A (en) * | 1957-09-24 | 1963-11-19 | Ibm | Graded energy gap semiconductor devices |
| DE1170082B (en) * | 1960-03-25 | 1964-05-14 | Western Electric Co | Method for manufacturing semiconductor components |
| DE1233495B (en) * | 1960-02-24 | 1967-02-02 | Nippon Telegraph & Telephone | Process for the production of tunnel diodes |
| DE1260032B (en) * | 1962-05-14 | 1968-02-01 | Rca Corp | Process for forming a rectifying barrier layer in a semiconductor wafer |
| DE1289190B (en) * | 1956-08-10 | 1969-02-13 | Philips Nv | Process for the production of a semiconducting barrier system as well as a semiconducting barrier system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1105522B (en) * | 1958-11-12 | 1961-04-27 | Licentia Gmbh | Transistor with a disk-shaped semiconductor body |
-
1954
- 1954-04-21 FR FR1103544D patent/FR1103544A/en not_active Expired
- 1954-04-27 GB GB12152/54A patent/GB751408A/en not_active Expired
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2899343A (en) * | 1954-05-27 | 1959-08-11 | Jsion | |
| US3029170A (en) * | 1955-09-02 | 1962-04-10 | Gen Electric Co Ltd | Production of semi-conductor bodies |
| US2973290A (en) * | 1956-07-05 | 1961-02-28 | Gen Electric Co Ltd | Production of semi-conductor bodies by impurity diffusion through station ary interface |
| US2836523A (en) * | 1956-08-02 | 1958-05-27 | Bell Telephone Labor Inc | Manufacture of semiconductive devices |
| DE1289190B (en) * | 1956-08-10 | 1969-02-13 | Philips Nv | Process for the production of a semiconducting barrier system as well as a semiconducting barrier system |
| US2977256A (en) * | 1956-08-16 | 1961-03-28 | Gen Electric | Semiconductor devices and methods of making same |
| US2943006A (en) * | 1957-05-06 | 1960-06-28 | Westinghouse Electric Corp | Diffused transistors and processes for making the same |
| US3111611A (en) * | 1957-09-24 | 1963-11-19 | Ibm | Graded energy gap semiconductor devices |
| US2938819A (en) * | 1958-06-27 | 1960-05-31 | Ibm | Intermetallic semiconductor device manufacturing |
| DE1233495B (en) * | 1960-02-24 | 1967-02-02 | Nippon Telegraph & Telephone | Process for the production of tunnel diodes |
| DE1170082B (en) * | 1960-03-25 | 1964-05-14 | Western Electric Co | Method for manufacturing semiconductor components |
| DE1116829B (en) * | 1960-06-08 | 1961-11-09 | Telefunken Patent | Method for manufacturing a semiconductor device |
| DE1260032B (en) * | 1962-05-14 | 1968-02-01 | Rca Corp | Process for forming a rectifying barrier layer in a semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1103544A (en) | 1955-11-03 |
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