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GB2579933A - Switch control circuit for a gate drive - Google Patents

Switch control circuit for a gate drive Download PDF

Info

Publication number
GB2579933A
GB2579933A GB2002628.2A GB202002628A GB2579933A GB 2579933 A GB2579933 A GB 2579933A GB 202002628 A GB202002628 A GB 202002628A GB 2579933 A GB2579933 A GB 2579933A
Authority
GB
United Kingdom
Prior art keywords
switch
control circuit
switch control
switching
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB2002628.2A
Other versions
GB202002628D0 (en
Inventor
John Peto Raymond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quepal Ltd
Original Assignee
Quepal Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quepal Ltd filed Critical Quepal Ltd
Publication of GB202002628D0 publication Critical patent/GB202002628D0/en
Publication of GB2579933A publication Critical patent/GB2579933A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/009Resonant driver circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Dc-Dc Converters (AREA)

Abstract

A switch control circuit for a gate drive includes: a charge and discharge resonant power supply device comprising: first and second switching devices driving a common gate of a power switch. A switch operates as a 3-pole switch, employing input capacitance and inductance in order to switch on and switch off the control circuit by way of resonant switching. The switch control circuit recycles what is otherwise energy that is wasted during switching the device turn off and stores this energy for a subsequent cycle, so that when the switch turns on, its energy requirement is less as a proportion is supplied from the stored energy.

Claims (15)

  1. Claims
    1 . A switch control circuit (Fig 40) for a gate drive comprises: first and second switching devices (Q1 and Q2) and a third switching device (S1 ), the third switching device (S1 ) is operative to connect coil (L2) to a common gate of a power switch (Q3); the switching devices (Q1 , Q2 and S1 ) are arranged to operate as a 3-pole switch and are operative to employ inherent capacitance of the first and second switching devices (Q1 and Q2), the power switch (Q3) and inductance of inductor (L2), in order to achieve resonant switching of the power switch (Q3), characterised in that energy on a first capacitor (C6), which connects the inductor (L2) via the third switching device (S1 ) to the power switch (Q3), is commutated from the first capacitor (C6) to capacitive elements of the first and second switching devices (Q1 and Q2) and of the power switch (Q3) and inductance of inductor (L2), when the power switch (Q3) is turned on; and energy is commutated from the capacitive elements of the first and second switching devices (Q1 and Q2) and from the power switch (Q3) and from inductance of inductor (L2) to the first capacitor (C6), when the power switch (Q3) is turned off; and any shortfall in drive voltage (VE), which occurs during switching either switching device (Q1 ) or switching device (Q2), is replenished by extracting energy from a reverse capacitance energy storage circuit by a charge scavenging circuit (Fig 40), thereby reducing cyclic energy losses arising from resistance in resonant devices (Q1 , Q2, S1 , L2 and C6) when commutating energy from the first capacitor (C6) to the power switch (Q3) and to the first capacitor (C6) from the power switch (Q3).
  2. 2. A switch control circuit (Fig 34) according to claim 1 includes an inductor (L1 ) wherein energy is stored in capacitors (CRss and Ciss) during a switching cycle.
  3. 3. A switch control circuit according to claim 1 or 2 includes a means for over current detection for limiting current in power switch (Q3).
  4. 4. A switch control circuit according to any preceding claim is adapted to be negatively biased in the off state of power switch (Q3).
  5. 5. A switch control circuit according any preceding claim is packaged in a driver module.
  6. 6. A switch control circuit according to any of claims 1 to 4 is packaged in a driver chip.
  7. 7. A switch control circuit according to any preceding claim includes a soft start circuit.
  8. 8. A switch control circuit according to any preceding claim is included in a torque ripple reduction device.
  9. 9. A switch control circuit according to any preceding claim includes first and second drivers for soft start and hard start and a high voltage diode isolates the circuit from variable impedance.
  10. 10. A switch control circuit according to any preceding claim includes a resonant driver that is operative in excess of 1 kHz.
  11. 1 1 . A switch control circuit according to any preceding claim includes: a resonant power supply device.
  12. 12. A power converter includes the switch control circuit according to any preceding claim.
  13. 13. A method of operating the switch control circuit (Fig 40) according to any of claims 1 to 12 with a resonant gate drive including the steps of: charging and discharging a resonant power supply by employing switching devices (S1 , Q1 and Q2) which drive a gate of a power switch (Q3); switching the switching devices (S1 , Q1 and Q2) in order to operate as a 3-pole switch; and employing an input capacitance of Q3 and an inductance of (L2) in order to switch on and switch off the control circuit by way of resonant switching.
  14. 14. A method of operating the switch control circuit (Fig 40) according to any of claims 1 to 12 with a resonant gate drive including the steps of: during a first interval of a charge/discharge cycle storing an amount of energy (E1 ) in inductor L2; and during a subsequent interval of the cycle, discharging an amount of energy (E2) from the inductor (L2) into a negative power supply (C6, Fig 36), whereby E1 is greater than E2.
  15. 15. A method according to either of claims 1 3 or 14 for extracting energy from a load driven by an external power supply via Q3 when connected to the switch control circuit according to any of claims 1 to 1 1 .
GB2002628.2A 2017-07-25 2018-07-23 Switch control circuit for a gate drive Withdrawn GB2579933A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1711952.0A GB2565274A (en) 2017-07-25 2017-07-25 A switch control circuit for a gate drive
PCT/IB2018/055474 WO2019021159A1 (en) 2017-07-25 2018-07-23 Switch control circuit for a gate drive

Publications (2)

Publication Number Publication Date
GB202002628D0 GB202002628D0 (en) 2020-04-08
GB2579933A true GB2579933A (en) 2020-07-08

Family

ID=59771591

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1711952.0A Withdrawn GB2565274A (en) 2017-07-25 2017-07-25 A switch control circuit for a gate drive
GB2002628.2A Withdrawn GB2579933A (en) 2017-07-25 2018-07-23 Switch control circuit for a gate drive

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1711952.0A Withdrawn GB2565274A (en) 2017-07-25 2017-07-25 A switch control circuit for a gate drive

Country Status (2)

Country Link
GB (2) GB2565274A (en)
WO (1) WO2019021159A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI739258B (en) * 2019-12-30 2021-09-11 台達電子工業股份有限公司 Pre-charge control circuit and method of controlling the same
CN113131730B (en) 2019-12-30 2023-12-19 台达电子工业股份有限公司 Precharge control circuit and control method thereof
CN111162763B (en) * 2020-01-08 2023-11-03 苏州大学 Switching speed adjusting method and device of field effect transistor
CN111342650B (en) * 2020-03-31 2024-08-23 深圳麦格米特电气股份有限公司 Power factor correction circuit and electronic equipment
CN111697957B (en) * 2020-06-17 2024-03-12 上海电气集团股份有限公司 Driving circuit applied to insulated gate bipolar transistor IGBT
CN117674606A (en) * 2023-11-02 2024-03-08 山东航天电子技术研究所 Nationwide synchronous rectification and driving circuit suitable for GaN power device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120206170A1 (en) * 2011-02-15 2012-08-16 Denso Corporation Semiconductor switching device drive circuit
US8558525B1 (en) * 2007-06-15 2013-10-15 International Rectifier Corporation Power supply circuit and reuse of gate charge
US20170019095A1 (en) * 2015-07-14 2017-01-19 Infineon Technologies Austria Ag System and Method for Operating a Switching Transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010261A (en) * 1989-12-08 1991-04-23 General Electric Company Lossless gate driver circuit for a high frequency converter
JP4321330B2 (en) * 2003-07-02 2009-08-26 株式会社デンソー Gate drive circuit
WO2005025065A1 (en) * 2003-09-08 2005-03-17 Philips Intellectual Property & Standards Gmbh High frequency control of a semiconductor switch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8558525B1 (en) * 2007-06-15 2013-10-15 International Rectifier Corporation Power supply circuit and reuse of gate charge
US20120206170A1 (en) * 2011-02-15 2012-08-16 Denso Corporation Semiconductor switching device drive circuit
US20170019095A1 (en) * 2015-07-14 2017-01-19 Infineon Technologies Austria Ag System and Method for Operating a Switching Transistor

Also Published As

Publication number Publication date
GB2565274A (en) 2019-02-13
GB201711952D0 (en) 2017-09-06
GB202002628D0 (en) 2020-04-08
WO2019021159A1 (en) 2019-01-31

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)