GB2564701A - A power electronics module and a method of protecting a solid state switching device in a power electronics module - Google Patents
A power electronics module and a method of protecting a solid state switching device in a power electronics module Download PDFInfo
- Publication number
- GB2564701A GB2564701A GB1711741.7A GB201711741A GB2564701A GB 2564701 A GB2564701 A GB 2564701A GB 201711741 A GB201711741 A GB 201711741A GB 2564701 A GB2564701 A GB 2564701A
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- GB
- United Kingdom
- Prior art keywords
- switching device
- fault
- gate
- power electronics
- electronics module
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007787 solid Substances 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims description 14
- 230000003213 activating effect Effects 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. DC/AC converters
- H02H7/1227—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. DC/AC converters responsive to abnormalities in the output circuit, e.g. short circuit
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
A solid state switching device M1 (e.g. MOSFET, IGBT) in a power electronics module (e.g. inverter) is protected in the event of a short circuit fault. The power electronics module includes; at least one solid state switching device, a gate driver, a controller and a current limiting diode D1. The controller provides a gate signal to the gate driver. The gate driver connects to, and provides a drive input to, a gate terminal of the switching device to activate the switching device. The current limiting diode is connected in parallel between the gate driver and the switching device and is connected to ground via a fault protection switch S1. The fault protection switch is activated in the event of a short circuit fault and protects the switching device by limiting the current received by the switching device. A fault detector includes a comparator that compares a voltage received from a collector terminal of the switching device against a threshold voltage. If the voltage exceeds the threshold, a control signal indicating a short circuit fault is used to trigger the fault protection switch. The controller may assess the severity of the fault based on the voltage. If the fault exceeds a shut-down threshold, the gate driver and, thus, the switching device is disabled.
Description
A POWER ELECTRONICS MODULE AND A METHOD OF PROTECTING A SOLID STATE SWITCHING DEVICE IN A POWER ELECTRONICS MODULE
The disclosure relates to a power electronics module and a method of protecting a solid state switching device in a power electronics module in the event of a short circuit fault.
Power electronics modules are playing an increasingly important role in industrial power conversion systems. Such modules utilise solid-state switching devices, such as IGBT and MOSFET, to convert electric energy from one form to another, such as converting between AC and DC (e.g. a rectifier or an inverter) or changing the frequency or voltage of the electric energy (AC-AC or DC-DC converters).
Failure of these power modules is the most common fault associated with industrial drives, such as variable speed drives used for controlling pumps, rolling mills, etc. Consequently, software and hardware protection systems are used to detect faults in power modules and provide protection against over current or short circuit current.
During a short circuit fault the time between the fault initiation and the device failure is very short. Typically, the switching devices can withstand abnormal current (generally twice the rated current) for up to around 10ps. However, this may reduce due to ageing and overstress, and so detection should preferably happen well within this period. This is particularly important for mission-critical applications, such as those found in the aerospace industry.
Common techniques for detecting short circuit faults in solid-state switching devices include desaturation detection and gate voltage monitoring.
With the desaturation detection technique, a diode is used to continuously monitor the collector-emitter voltage. Although desaturation detection is a simple method, the response time is not suitable for high speed switching. Further, a blanking time is usually required to reject noise generated by switching transients. Such blanking time is typically around 1 to 5ps and so is significant when compared with the withstand time of the device.
Gate voltage monitoring methods are more sophisticated, but require significant additional components.
It is therefore desired to provide a fault detector which is able to quickly detect a fault with minimal additional passive components.
In accordance with an aspect of the disclosure, there is provided a power electronics module comprising: at least one solid state switching device; a gate driver connected to a gate terminal of the switching device and configured to provide a drive input to the gate terminal to activate the switching device; a controller connected to the gate driver and configured to provide a gate signal to the gate driver; and a current limiting diode connected in parallel between the gate driver and the switching device and being connected to ground via a fault protection switch, wherein the fault protection switch is configured to be activated in the event of a short circuit fault to provide protection to the switching device by limiting the current received by the switching device.
The power electronics module may further comprise a fault detector comprising a comparator. The comparator may be configured to compare a voltage received from a collector terminal of the switching device against a threshold voltage and if the voltage exceeds the threshold voltage provide a control signal indicating a short circuit fault which is used to trigger the fault protection switch.
The controller may be configured to assess the severity of the fault based on the voltage and if the fault exceeds a shut-down threshold to disable the gate driver and thus the switching device.
The power electronics module may further comprise a latch circuit which receives and stores the output from the comparator until it is reset.
The controller may be configured to provide a reset signal to the latch circuit if the fault does not exceed the shut-down threshold.
The control signal and the gate signal may form inputs to an AND gate, and the output of the AND gate may trigger the fault protection switch if both of the inputs are high.
The power electronics module may be an inverter.
In accordance with another aspect of the disclosure, there is provided method of protecting a solid state switching device in a power electronics module in the event of a short circuit fault, the method comprising: detecting a short circuit fault and providing a control signal in response; and activating a fault protection switch in response to the control signal. The fault protection switch connects a current limiting diode connected in parallel between a gate driver and the switching device to ground so as to provide protection to the switching device by limiting the current received by the switching device.
The method may further comprise assessing a severity of the fault based on a voltage received from the switching device at a controller of a gate driver of the switching device, and if the fault exceeds a shut-down threshold, disabling the gate driver and thus the switching device.
For a better understanding of the disclosure, and to show more clearly how it may be carried into effect, reference will now be made, by way of example, to the accompanying drawings, in which:Figure 1 is a block diagram of a motor drive comprising a gate driver module with active fault protection;
Figure 2 is a schematic diagram showing elements of the gate driver module;
Figure 3 is a schematic diagram showing the circuits of the gate driver module in further detail;
Figure 4 is a flow chart of a short circuit detection and protection method employed using the gate driver module; and
Figure 5 shows graphs of variables during a short circuit fault.
Figure 1 shows a motor drive circuit comprising a power module with a fault detector.
The circuit comprises a three-phase motor drive M which is powered by a DC power source, VDC. The DC power source VDC is connected to the motor M via a split DC-link formed by a pair of serially connected capacitors which are grounded therebetween and a three-phase inverter. The inverter is formed by three half-bridge inverters each comprising a pair of transistors (switches), such as IGBTs or MOSFETs. Specifically, a first phase leg is formed by transistors Mt and M2 having an output terminal A formed therebetween, a second phase leg is formed by transistors M3 and M4 having an output terminal B formed therebetween, and a third phase leg is formed by transistors M5 and M6 having an output terminal C formed therebetween. Each of the transistors MrM6 is provided with a flyback diode DrD6 connected between its collector and emitter.
The gates of the upper transistors M3 and M5 are connected to a first gate driver module GDt and the gates of the lower transistors M2, M4 and M6 are connected to a second gate driver module GD2.
The first and second gate driver modules GDt and GD2 are configured to control the transistors MrM6 to provide outputs at terminals A, B, C which are offset by 120°. The gate driver modules GD^ GD2 are controlled by a digital signal processor (or other controller) which receives feedback from the motor M. In particular, the position of the motor may be relayed to the digital signal processor, as well as the input currents or voltages on terminals A, B, C via suitable sensors. As shown, these inputs are provided to the digital signal processor via an isolated Analog-to-Digital Converter (ADC).
Each of the transistors MrM6 are connected to a desaturation diode DDEsat (although only shown for transistors Mt and M2) via its collector terminal which provides an input to the respective gate driver module GD^ GD2.
As shown in Figure 2, the gate driver modules GD^ GD2 each comprise a fault evaluation circuit, an analog isolation circuit and a gate driver with active short circuit protection provided by a fault protection circuit.
As shown in Figure 3, the fault evaluation circuit comprises a comparator circuit formed by an operational amplifier which compares the voltage received from the desaturation diode via a shunt resistor Rs with a reference voltage, Vref. A bypass capacitor CB is provided after the shunt resistor Rs to remove noise before the comparator circuit. The output from the desaturation diode is also passed to the digital signal processor.
The output signal from the comparator circuit is fed to a delay circuit. In the delay circuit, the output signal is divided to form two input channels into an AND gate, with one of the input channels passing through an odd number (three shown here) of inverter (NOT) gates. The inverter gates delay the signal such that it is offset from that of the other input channel, as well as being inverted. There is therefore a short period where the signals are both high (when the input signal first changes from low to high) which causes a short pulse of a high output from the AND gate.
The output from the AND gate is passed via a buffer to the S input of a D flip flop. The D flip flop also has its reset input R connected to the digital signal processor. The output Q from the D flip flop is combined with the gate pulse VG in an AND gate and the output from the AND gate is used to control the fault protection circuit via a switch Sv The fault protection circuit comprises a reverse-biased current limiting diode Dt connected via the switch Si to ground and a capacitor connected in parallel with the diode Dp
The operation of the circuit will now be described with reference to Figure 4.
Under normal operating conditions (i.e. where no fault is present), the voltage across the collector and emitter of the transistor Mt is less than the reference voltage Vref (typically 3V) and so the comparator output stays low. Consequently, no short circuit condition is detected and the output from the AND gate remains low such that the switch Si is not activated.
When a short circuit fault occurs, the voltage across the collector and emitter spikes above the normal on-state voltage and the desaturation diode will act as a path for this voltage spike to the comparator. This voltage is compared with the reference voltage Vref of the comparator and if the voltage exceeds this threshold, then the output of the comparator will become high. The output from the comparator is stored by the D flip flop and is then supplied to the AND gate where it is combined with the gate pulse of the transistor. If both inputs to the AND gate are high, the output of AND gate will cause the switch Sf and the fault protection circuit to be enabled. The current limiting diode Dt clamps the gate voltage and minimises the gate current fluctuation to limit the fault current received by the transistor Mt (typically to between 1 and 2.5 amps).
As shown in Figure 4, the voltage from the desaturation diode, which is isolated by the analog isolation circuit, is sent to the digital signal processor where the severity of the fault is evaluated. If the fault level is above a threshold limit, the digital signal processor stops the PWM pulses to the gate driver, which stops the switching of the transistors MrM6 within the inverter. If the fault level is below the threshold limit, then the digital signal processor resets the D flip flop and resets the switch Si to disable the fault protection circuit which disables the fault protection circuit, such that the inverter resumes switching operations.
Figure 5 shows a simulation of the certain variables during a short circuit fault. Specifically, the graphs show the gate-emitter voltage, the collector-emitter voltage, the collector current and the gate current. The graphs show the outputs initially under normal operating conditions, with the transistor being switched on at 300ps and operating properly until just after 330ps when a short circuit fault takes place. When the short circuit fault occurs, the gate voltage is immediately clamped at a lower voltage by the current limiting diode Dp The severity of the fault is then assessed (within a fault assessment window period) prior to taking action to protect the power module. At the end of the fault assessment period, the gate voltage is reduced to zero to protect the power module from the fault current and potential stress.
As shown, there is no large turn-off transient (collector-emitter voltage) stress induced across the power module when the fault protection circuit is activated, and also there is no additional potential overshoot when the device is turned off completely.
The current limiting diode provides a simple and inexpensive means of reducing the current seen by the switching device during a short circuit fault and so avoids gate turnoff failure. Further, the arrangement described minimises the power loss and the increase in junction temperature of the device during the fault. The arrangement limits the potential and thermal stress imposed during fault conditions and does so without requiring any additional passive elements.
Although the fault protection circuit has been described with reference to a specific power converter, it will be appreciated that it may be used with any other form of power converter which comprises a solid state switching device.
The fault protection circuit is suitable for both hard switch faults and faults under load. The arrangement provides faster fault protection compared to other techniques, making it particularly suitable for high switching frequency devices such Sic MOSFET.
The arrangement described can be implemented as an integral part of the power module within the gate driver circuit. Alternatively, fault protection circuit may be offered as an auxiliary component.
The fault protection circuit may be used with any suitable fault detection method and is not limited to the desaturation diode described.
The short circuit detection and protection can be adjusted to provide optimum usage and protection specific to the power module’s specification, application, mission, environment, system lifecycle and system loads.
The arrangement may be used in fault tolerant (multi-level) converters or hot swap converters to allow safe shutdown and reconfiguration. It may also be applied to protect against short circuit conditions in protection devices such as Solid State power controllers.
The fault protection circuit can be applied across a number of applications that use power electronics devices such as IGBT, MOSFET, etc. and across devices manufactured from different materials such as Si, SiC, GaN etc. For example, one application could be in Grid connected inverters often used in solar, fuel cell, and wind energy generation. It may also be used with industrial drives, such as variable speed drives used for controlling pumps, rolling mills, etc., as well as in DC-DC converters used in various switch mode power supplies.
The arrangement described may also be particularly useful in safety critical applications, such as power converters used in the starter generator, e-oil, e-fuel or electrical actuation systems in aero applications. Electrical/hybrid electric propulsion systems used on land and sea are also potential applications.
Claims (9)
1. A power electronics module comprising:
at least one solid state switching device;
a gate driver connected to a gate terminal of the switching device and configured to provide a drive input to the gate terminal to activate the switching device;
a controller connected to the gate driver and configured to provide a gate signal to the gate driver; and a current limiting diode connected in parallel between the gate driver and the switching device and being connected to ground via a fault protection switch;
wherein the fault protection switch is configured to be activated in the event of a short circuit fault to provide protection to the switching device by limiting the current received by the switching device.
2. A power electronics module as claimed in claim 1, further comprising a fault detector comprising a comparator, wherein the comparator is configured to compare a voltage received from a collector terminal of the switching device against a threshold voltage and if the voltage exceeds the threshold voltage provide a control signal indicating a short circuit fault which is used to trigger the fault protection switch.
3. A power electronics module as claimed in claim 2, wherein the controller is configured to assess the severity of the fault based on the voltage and if the fault exceeds a shut-down threshold to disable the gate driver and thus the switching device.
4. A power electronics module as claimed in claim 2 or 3, further comprising a latch circuit which receives and stores the output from the comparator until it is reset.
5. A power electronics module as claimed in claim 4 when dependent on claim 3, wherein the controller is configured to provide a reset signal to the latch circuit if the fault does not exceed the shut-down threshold.
6. A power electronics module as claimed in any of claims 2 to 5, wherein the control signal and the gate signal form inputs to an AND gate, and the output of the AND gate triggers the fault protection switch if both of the inputs are high.
7. A power electronics module as claimed in any preceding claim, wherein the power electronics module is an inverter.
8. A method of protecting a solid state switching device in a power electronics
5 module in the event of a short circuit fault, the method comprising: detecting a short circuit fault and providing a control signal in response; and activating a fault protection switch in response to the control signal;
wherein the fault protection switch connects a current limiting diode connected in parallel between a gate driver and the switching device to ground so as to provide
10 protection to the switching device by limiting the current received by the switching device.
9. A method as claimed in claim 8, further comprising assessing a severity of the fault based on a voltage received from the switching device at a controller of a gate
15 driver of the switching device, and if the fault exceeds a shut-down threshold, disabling the gate driver and thus the switching device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1711741.7A GB2564701A (en) | 2017-07-21 | 2017-07-21 | A power electronics module and a method of protecting a solid state switching device in a power electronics module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1711741.7A GB2564701A (en) | 2017-07-21 | 2017-07-21 | A power electronics module and a method of protecting a solid state switching device in a power electronics module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB201711741D0 GB201711741D0 (en) | 2017-09-06 |
| GB2564701A true GB2564701A (en) | 2019-01-23 |
Family
ID=59771587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1711741.7A Withdrawn GB2564701A (en) | 2017-07-21 | 2017-07-21 | A power electronics module and a method of protecting a solid state switching device in a power electronics module |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2564701A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3767315A1 (en) * | 2019-07-16 | 2021-01-20 | Infineon Technologies Austria AG | Short circuit detection and protection for a gate driver circuit and methods of detecting the same using logic analysis |
| EP3787166A1 (en) * | 2019-09-02 | 2021-03-03 | ABB Schweiz AG | Protection scheme for power converters utilizing cascaded bipolar and unipolar power semiconductor devices |
| EP4456395A1 (en) * | 2023-04-26 | 2024-10-30 | Abb Schweiz Ag | Flying capacitor converter and method for protecting a flying capacitor converter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2255244A (en) * | 1991-03-22 | 1992-10-28 | Fuji Electric Co Ltd | Insulated-gate controlled semiconductor device |
| US5444591A (en) * | 1993-04-01 | 1995-08-22 | International Rectifier Corporation | IGBT fault current limiting circuit |
| EP0736974A1 (en) * | 1995-04-07 | 1996-10-09 | STMicroelectronics, Inc. | Gate drive circuit |
| US20080212247A1 (en) * | 2006-11-21 | 2008-09-04 | Lee Jun-Bae | Insulated gate bipolar transistor fault protection system |
-
2017
- 2017-07-21 GB GB1711741.7A patent/GB2564701A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2255244A (en) * | 1991-03-22 | 1992-10-28 | Fuji Electric Co Ltd | Insulated-gate controlled semiconductor device |
| US5444591A (en) * | 1993-04-01 | 1995-08-22 | International Rectifier Corporation | IGBT fault current limiting circuit |
| EP0736974A1 (en) * | 1995-04-07 | 1996-10-09 | STMicroelectronics, Inc. | Gate drive circuit |
| US20080212247A1 (en) * | 2006-11-21 | 2008-09-04 | Lee Jun-Bae | Insulated gate bipolar transistor fault protection system |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3767315A1 (en) * | 2019-07-16 | 2021-01-20 | Infineon Technologies Austria AG | Short circuit detection and protection for a gate driver circuit and methods of detecting the same using logic analysis |
| US11183835B2 (en) | 2019-07-16 | 2021-11-23 | Infineon Technologies Austria Ag | Short circuit detection and protection for a gate driver circuit and methods of detecting the same using logic analysis |
| EP3787166A1 (en) * | 2019-09-02 | 2021-03-03 | ABB Schweiz AG | Protection scheme for power converters utilizing cascaded bipolar and unipolar power semiconductor devices |
| US11563370B2 (en) | 2019-09-02 | 2023-01-24 | Abb Schweiz Ag | Protection scheme for power converters utilizing cascaded bipolar and unipolar power semiconductor devices |
| EP4456395A1 (en) * | 2023-04-26 | 2024-10-30 | Abb Schweiz Ag | Flying capacitor converter and method for protecting a flying capacitor converter |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201711741D0 (en) | 2017-09-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |