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GB2315597B - A process for etching an ingap layer - Google Patents

A process for etching an ingap layer

Info

Publication number
GB2315597B
GB2315597B GB9715325A GB9715325A GB2315597B GB 2315597 B GB2315597 B GB 2315597B GB 9715325 A GB9715325 A GB 9715325A GB 9715325 A GB9715325 A GB 9715325A GB 2315597 B GB2315597 B GB 2315597B
Authority
GB
United Kingdom
Prior art keywords
etching
ingap layer
ingap
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9715325A
Other versions
GB9715325D0 (en
GB2315597A (en
Inventor
Kiyoto Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Publication of GB9715325D0 publication Critical patent/GB9715325D0/en
Publication of GB2315597A publication Critical patent/GB2315597A/en
Application granted granted Critical
Publication of GB2315597B publication Critical patent/GB2315597B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9715325A 1996-07-23 1997-07-21 A process for etching an ingap layer Expired - Fee Related GB2315597B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8193338A JPH1041285A (en) 1996-07-23 1996-07-23 Etching method of indium-gallium-phosphorus layer

Publications (3)

Publication Number Publication Date
GB9715325D0 GB9715325D0 (en) 1997-09-24
GB2315597A GB2315597A (en) 1998-02-04
GB2315597B true GB2315597B (en) 1999-02-24

Family

ID=16306240

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9715325A Expired - Fee Related GB2315597B (en) 1996-07-23 1997-07-21 A process for etching an ingap layer

Country Status (4)

Country Link
JP (1) JPH1041285A (en)
KR (1) KR100236662B1 (en)
FR (1) FR2751788B1 (en)
GB (1) GB2315597B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5228298B2 (en) * 2006-08-04 2013-07-03 カシオ計算機株式会社 Semiconductor thin film processing method and semiconductor device manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106477A2 (en) * 1982-09-10 1984-04-25 Western Electric Company, Incorporated Process for manufacturing semiconductor devices comprising an electrochemical-etching step

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270245A (en) * 1992-11-27 1993-12-14 Motorola, Inc. Method of forming a light emitting diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106477A2 (en) * 1982-09-10 1984-04-25 Western Electric Company, Incorporated Process for manufacturing semiconductor devices comprising an electrochemical-etching step

Also Published As

Publication number Publication date
FR2751788B1 (en) 2000-07-07
GB9715325D0 (en) 1997-09-24
KR100236662B1 (en) 2000-01-15
JPH1041285A (en) 1998-02-13
KR980011975A (en) 1998-04-30
FR2751788A1 (en) 1998-01-30
GB2315597A (en) 1998-02-04

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030721