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GB2208119B - Method and structure for achieving low contact resistance to aluminum and its alloys - Google Patents

Method and structure for achieving low contact resistance to aluminum and its alloys

Info

Publication number
GB2208119B
GB2208119B GB8812936A GB8812936A GB2208119B GB 2208119 B GB2208119 B GB 2208119B GB 8812936 A GB8812936 A GB 8812936A GB 8812936 A GB8812936 A GB 8812936A GB 2208119 B GB2208119 B GB 2208119B
Authority
GB
United Kingdom
Prior art keywords
alloys
aluminum
contact resistance
low contact
achieving low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8812936A
Other versions
GB2208119A (en
GB8812936D0 (en
Inventor
Ronald Harvey Wilson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB8812936D0 publication Critical patent/GB8812936D0/en
Publication of GB2208119A publication Critical patent/GB2208119A/en
Application granted granted Critical
Publication of GB2208119B publication Critical patent/GB2208119B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB8812936A 1987-06-01 1988-06-01 Method and structure for achieving low contact resistance to aluminum and its alloys Expired - Fee Related GB2208119B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5651087A 1987-06-01 1987-06-01

Publications (3)

Publication Number Publication Date
GB8812936D0 GB8812936D0 (en) 1988-07-06
GB2208119A GB2208119A (en) 1989-03-01
GB2208119B true GB2208119B (en) 1992-01-15

Family

ID=22004882

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8812936A Expired - Fee Related GB2208119B (en) 1987-06-01 1988-06-01 Method and structure for achieving low contact resistance to aluminum and its alloys

Country Status (4)

Country Link
JP (1) JP2798250B2 (en)
DE (1) DE3818509A1 (en)
FR (1) FR2620860B1 (en)
GB (1) GB2208119B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930000309B1 (en) * 1989-11-22 1993-01-15 삼성전자 주식회사 Manufacturing method of semiconductor device
US5032233A (en) * 1990-09-05 1991-07-16 Micron Technology, Inc. Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point metal as an anti-reflective coating during laser planarization
JPH04346231A (en) * 1991-05-23 1992-12-02 Canon Inc Manufacture of semiconductor device
US7361581B2 (en) 2004-11-23 2008-04-22 International Business Machines Corporation High surface area aluminum bond pad for through-wafer connections to an electronic package
US20060131700A1 (en) * 2004-12-22 2006-06-22 David Moses M Flexible electronic circuit articles and methods of making thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1596907A (en) * 1978-05-25 1981-09-03 Fujitsu Ltd Manufacture of semiconductor devices
EP0143652A2 (en) * 1983-11-28 1985-06-05 Kabushiki Kaisha Toshiba Process for forming multi-layer interconnections
EP0194109A2 (en) * 1985-02-28 1986-09-10 Kabushiki Kaisha Toshiba Method for producing a semiconductor device using a chemical vapour deposition step
EP0319214A1 (en) * 1987-12-04 1989-06-07 AT&T Corp. Method for making semiconductor integrated circuits using selective tungsten deposition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918659A (en) * 1982-07-23 1984-01-31 Hitachi Ltd Formation of multilayer wiring
JPS5998535A (en) * 1982-11-29 1984-06-06 Hitachi Ltd Manufacture of semiconductor integrated circuits
JPS59202651A (en) * 1983-05-04 1984-11-16 Hitachi Ltd Forming method of multilayer interconnection
JPS60115221A (en) * 1983-11-28 1985-06-21 Toshiba Corp Manufacture of semiconductor device
EP0223787B1 (en) * 1985-05-10 1992-03-18 General Electric Company Selective chemical vapor deposition method and apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1596907A (en) * 1978-05-25 1981-09-03 Fujitsu Ltd Manufacture of semiconductor devices
EP0143652A2 (en) * 1983-11-28 1985-06-05 Kabushiki Kaisha Toshiba Process for forming multi-layer interconnections
EP0194109A2 (en) * 1985-02-28 1986-09-10 Kabushiki Kaisha Toshiba Method for producing a semiconductor device using a chemical vapour deposition step
EP0319214A1 (en) * 1987-12-04 1989-06-07 AT&T Corp. Method for making semiconductor integrated circuits using selective tungsten deposition

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEDM Technical Digest, Dec 5-7 1983, pages 550-553, *

Also Published As

Publication number Publication date
FR2620860B1 (en) 1994-07-29
DE3818509A1 (en) 1988-12-22
JP2798250B2 (en) 1998-09-17
GB2208119A (en) 1989-03-01
FR2620860A1 (en) 1989-03-24
JPH01308050A (en) 1989-12-12
GB8812936D0 (en) 1988-07-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030601