GB2132413A - Microwave device package - Google Patents
Microwave device package Download PDFInfo
- Publication number
- GB2132413A GB2132413A GB8333617A GB8333617A GB2132413A GB 2132413 A GB2132413 A GB 2132413A GB 8333617 A GB8333617 A GB 8333617A GB 8333617 A GB8333617 A GB 8333617A GB 2132413 A GB2132413 A GB 2132413A
- Authority
- GB
- United Kingdom
- Prior art keywords
- package
- microwave
- substrate
- base plate
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
- H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
In a microwave package comprising a base plate (20), a side wall member (18) and a lid (28) which are welded together after assembly of the microwave device (10) and substrate (12) onto the base plate on which the device can be tested prior to welding the side wall member and lid and base plate to form a hermetically sealed package, the substrate and base plate are made of materials having similar coefficients of expansion to avoid problems caused by differential expansion. Contact is made to the microwave device by glass to metal seals (16) in the side wall member. <IMAGE>
Description
SPECIFICATION
Microwave packages
The present invention relates to microwave packages and more particularly to packages which are hermetically sealed.
Known microwave packages comprise a box into which a microwave circuit is placed, a lid being screwed into position to seal the package.
These packages suffer from a number of disadvantages. In particular they are not suitable for a wide frequency range of operation which is now possible with gallium arsenide integrated circuits.
The present invention seeks to provide a microwave package which can operate with good microwave performance over a wide range of frequencies and also which has good thermal properties allowing operation at higher power ratings than previously obtainable.
According to the present invention there is provided a microwave package including an active microwave device connected to substrate, the substrate being positioned on a base plate of the package in good thermal contact therewith, a wall member and a lid member for the package being welded to the base plate to form a hermetically sealed package in which the substrate and base plate have similar coefficients of expansion and in which contact is made to the active microwave device via glass to metal seals in the wall member.
Preferably the substrate has electrically conductive tracks printed on it at one end of which the microwave device is connected and at the other end of which contact pads are provided for connection to leads passing through the glass to metal seals in which the complete package is constructed such that the height of the lead above the base member is substantially equivalent to the height of the contact pad above the base member
such that the lead and contact member can be connected together without any substantial distance between them.
The importance of the above feature is that a large distance between the two would necessitate a a joining wire or very large solder blob which would introduce microphony effects into the circuit.
According to the present invention there is also provided a microwave package including a base plate of tungsten copper a wall member of nickel/iron or Kovar (R.T.M.) and a lid of nickel/iron or Kovar, in which the microwave circuit is mounted on a beryllium oxide substrate which is positioned on the base in good thermal contact therewith and in which the leads to the microwave device pass through the walls of the package via glass to metal seals and the lid, wall member and base are welded together to form a hermetically sealed package.
The use of tungsten copper as a base gives extremely good heat conduction away from the substrate via preferably a gold intermediate layer and therefore allows the microwave device or devices mounted on the substrate to operate at higher power levels than previously.
The use of tungsten copper as a base also allows the package to be welded by a laser since the increase in temperature within the package is limited to 1 200C which does not damage the microwave device.
In addition the welding of both wal' member to base and lid to wall member and the use of glass to metal seals provides an extremely good hermetically sealed microwave package which is capable of operating over a large frequency range.
Embodiments of the present invention will now be described with reference to the accompanying drawings in which:~
Figure 1 shows a microwave package according to the present invention in cross sectional elevation and
Figure 2 shows in greater detail a portion of the package of figure 1 illustrating the glass to metal seal and contact with the substrate by the input lead.
Referring now to figure 1, there is shown a microwave package including an active microwave device 10 mounted on a substrate 12 preferably made of beryllium oxide which has a relatively high thermal conductivity of 2.5 W/cm OK.
Contact is made to the device 10 via leads 14 which pass through glass to metal seals 16 in a wall member 18. The substrate 12 is fixed to a base plate 20 preferably via an intermediate conducting layer 22 which is preferably of gold.
The wall member 18 fits into a recess 24 in the base plate 20 and is welded all round to the base member 24 using a laser which form a weld 26.
A lid 28 is placed on top of the wall member 18 and welded all round to the wall member 18 by a laser as shown at 30. The base, wall member and lid are preferably rectangular.
With reference to figure 2 there is shown in greater detail the connection to the device 10 from the through lead 14. The lead 14 passes through the glass seal 16 at a height above the base member such that it is only slightly above a conductive track 32 on the substrate and such that it can be soldered directly to the track 32 as shown at 34. The substrate is gold backed 22 and the base 20 is plated with nickel and gold all over or on the inner package surface 36 as shown.
The base of the microwave package is made from tungsten copper which has a coefficient of thermal expansion of 10.1 ppm K-t which is similar to the thermal expansion of beryllium oxide (approx 6 ppm K-l). The thermal conductivity of tungsten copper is 240 Wm-' K-' which compares favourably with copper (400) and is substantially better than Kovar (17). The presence of the gold backing for the highly thermally conductive substrate and the nickel and gold plating, 36, of the base means that the microwave device 10 is provided with a good heat sink and can therefore be run at a higher power than with previous designs of microwave package.
In assembly the microwave device 10 is attached to the substrate 12 by, for example, soldering and then the gold backed alumina substrate 12 is soldered to the base 20 by means of an entectic. The wall member 18 made of Kovar or nickel iron is either fitted with the glass to metal seals or is provided with appropriate holes for a seal to be added later. The complete bonding of the microwave device and testing may be carried out before the attachment of the walls if desired.
The walls have the same thickness as the glass seals (1.15 mm approx) and are welded to the base by the use of a laser, as is the lid 28 of the package.
In a practical embodiment the laser used to weld both base and lid was a pulsed solid state
Nd/YAG laser of high average power with a computer machine control. The computer was programmed to weld round all four sides in an argon atmosphere, the laser beams being focussed on the metal joints.
In an alternative embodiment using an alumina ceramic substrate (thermal expansion approx 8 ppm K-') a hole is cut through the ceramic substrate to accommodate the microwave device which is soldered direclty on to the base to give the required high thermal conductivity. This is necessary because the alumina ceramic substrate does not have a sufficiently high thermal conductivity to enable the microwave device to be run at high power levels if it were positioned on top of the alumina ceramic substrate.
In practise the alumina substrate which carries the microwave stripline has a hole cut out of it preferably by laser. The substrate is soldered to the base and the device to the base in the hole made in the substrate.
The principal features of the present invention are that the use of tungsten copper base provides a good heat sink for the microwave device. The welding of the walls to the base using a laser technique does not cause an increase in temperature of more than 1 200C thus preventing damage to the components. The advantage of laser welding the base to the walls is that the chip and stripline can be assembled, bonded and tested before the walls are put in position. Normally the base must be soldered to the walls and all the above processes carried out within the confinement of the walls.
The good thermal properties of the package permit the use of gallium microwave devices operating over a wide frequency range.
Packages using integral glass-to-metal 50 ohm hermetic seals have good microwave performance up to at least 10 GHz, and in some forms, up to 18 GHz. This performance is also broadband, i.e.
there is continuous operation from DC upwards.
Many ceramic based packages of the same physical dimensions as the present invention suffer from narrow band performance due to resonances between the metal or metallised lid and the connecting lines through the package walls. The all-metal package also gives a superior performance with respect to "below waveguide cut off" performance whereby the transmission of unwanted signals can be suppressed by keeping the width of the package to a maximum dimension. This is of particular importance where the gallium arsenide integrated circuits, to be contained in the package, have high gain bandwidth product (e.g. 50 GHz or greater). The metal base affords a satisfactory RF ground for the
IC chips. The reproducibility of RF performance depends on the exploitation of microstrip on lumped element components whereby soldering or expoxying the chips to the ground plane is used to produce repeatable characteristics or parasitic elements respectively.
Claims (6)
1. A microwave package including an active microwave device connected to a substrate, the substrate being positioned on a base plate of the package in good thermal contact therewith, a wall member and a lid member for the package being welded to the base plate to form a hermetically sealed package in which the substrate and base plate have similar coefficients of expansion and in which contact is made to the active microwave device via glass to metal seals in the wall member.
2. A microwave package as claimed in claim 1 in which the substrate has electrically conductive tracks printed on it at one end of which the microwave device is connected and at the other end of which contact pads are provided for connection to leads passing through the glass to metal seals in which the complete package is constructed such that the height of the lead above the base member is substantially equivalent to the height of the contact pad above the base member such that the lead and contact member can be connected together without any substantial distance between them.
3. A microwave package as claimed in claim 1 or claim 2 in which the base plate is made of tungsten copper, the wall member of nickel iron or kovar and the lid of nickel iron or kovar, in which the microwave circuit is mounted on a beryllium oxide substrate which is positioned on the base in good thermal contact therewith.
4. A microwave package as claimed in claim 1 or claim 2 in which the base plate is made of tungsten copper, the wall member of nickel iron or kovar and the lid of nickel iron or kovar and in which the microwave circuit is mounted directly onto the base via a hole formed in an alumina substrate.
5. A microwave package as claimed in any one of claims 1 to 3 in which the base plate is formed with a recess around its periphery into which recess the wall member is located prior to welding.
6. A microwave package substantially as described with reference to the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8333617A GB2132413A (en) | 1982-12-24 | 1983-12-16 | Microwave device package |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8236783 | 1982-12-24 | ||
| GB8333617A GB2132413A (en) | 1982-12-24 | 1983-12-16 | Microwave device package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8333617D0 GB8333617D0 (en) | 1984-02-15 |
| GB2132413A true GB2132413A (en) | 1984-07-04 |
Family
ID=26284782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8333617A Withdrawn GB2132413A (en) | 1982-12-24 | 1983-12-16 | Microwave device package |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2132413A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2673765A1 (en) * | 1991-03-05 | 1992-09-11 | Thomson Composants Militaires | INTEGRATED CIRCUIT BOX WITH POWER CONNECTION. |
| WO1996013059A2 (en) * | 1994-10-17 | 1996-05-02 | Litton Systems, Inc. | Hermetically sealed microwave integrated circuit package with ground plane fused to package frame |
| US6493231B2 (en) | 1996-11-23 | 2002-12-10 | Bae Systems Electronics Limited | Electrical apparatus |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB943860A (en) * | 1960-06-21 | 1963-12-11 | Siemens Ag | Semi-conductor device |
| GB959226A (en) * | 1960-06-09 | 1964-05-27 | Siemens Ag | A process for use in the production of a semi-conductor device |
| GB1004020A (en) * | 1964-04-24 | 1965-09-08 | Standard Telephones Cables Ltd | Improvements in or relating to the mounting of electrical components |
| GB1244023A (en) * | 1967-08-30 | 1971-08-25 | Telefunken Patent | Semiconductor arrangement |
| GB1288246A (en) * | 1969-02-13 | 1972-09-06 | ||
| GB1341648A (en) * | 1971-08-26 | 1973-12-25 | Rca Corp | Thermal fatigue-free semiconductor device |
| GB1362136A (en) * | 1971-03-08 | 1974-07-30 | Communications Transistor Corp | Transistor package |
-
1983
- 1983-12-16 GB GB8333617A patent/GB2132413A/en not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB959226A (en) * | 1960-06-09 | 1964-05-27 | Siemens Ag | A process for use in the production of a semi-conductor device |
| GB943860A (en) * | 1960-06-21 | 1963-12-11 | Siemens Ag | Semi-conductor device |
| GB1004020A (en) * | 1964-04-24 | 1965-09-08 | Standard Telephones Cables Ltd | Improvements in or relating to the mounting of electrical components |
| GB1244023A (en) * | 1967-08-30 | 1971-08-25 | Telefunken Patent | Semiconductor arrangement |
| GB1288246A (en) * | 1969-02-13 | 1972-09-06 | ||
| GB1362136A (en) * | 1971-03-08 | 1974-07-30 | Communications Transistor Corp | Transistor package |
| GB1341648A (en) * | 1971-08-26 | 1973-12-25 | Rca Corp | Thermal fatigue-free semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2673765A1 (en) * | 1991-03-05 | 1992-09-11 | Thomson Composants Militaires | INTEGRATED CIRCUIT BOX WITH POWER CONNECTION. |
| WO1996013059A2 (en) * | 1994-10-17 | 1996-05-02 | Litton Systems, Inc. | Hermetically sealed microwave integrated circuit package with ground plane fused to package frame |
| WO1996013059A3 (en) * | 1994-10-17 | 1996-06-27 | Litton Systems Inc | Hermetically sealed microwave integrated circuit package with ground plane fused to package frame |
| US6493231B2 (en) | 1996-11-23 | 2002-12-10 | Bae Systems Electronics Limited | Electrical apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8333617D0 (en) | 1984-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5574314A (en) | Packaged semiconductor device including shielded inner walls | |
| US5235208A (en) | Package for microwave integrated circuit | |
| US5138436A (en) | Interconnect package having means for waveguide transmission of rf signals | |
| EP0200291B1 (en) | Surface mountable microwave ic package | |
| CA1232083A (en) | Microwave transistor package | |
| US6809931B2 (en) | Heat sink apparatus that provides electrical isolation for integrally shielded circuit | |
| JP5765174B2 (en) | Electronic equipment | |
| JP3209183B2 (en) | High frequency signal integrated circuit package and method of manufacturing the same | |
| KR100419428B1 (en) | High Power Micro Hybrid Integrated Circuits | |
| US4736273A (en) | Power semiconductor device for surface mounting | |
| US5406120A (en) | Hermetically sealed semiconductor ceramic package | |
| JPH11214556A (en) | High frequency input and output terminal, and package for high frequency semiconductor element | |
| KR100990912B1 (en) | Glass terminal for high-speed optical communication | |
| GB2132413A (en) | Microwave device package | |
| WO1984002612A1 (en) | Microwave packages | |
| JP3217677B2 (en) | High frequency semiconductor device | |
| US3852690A (en) | Microwave transmission line to ground plane transition | |
| JP2008125038A (en) | High-frequency substrate structure and high-frequency package | |
| JP2004335584A (en) | Semiconductor package | |
| JPS62196853A (en) | Package | |
| JP2000183488A (en) | Hybrid module | |
| JP3673491B2 (en) | I / O terminal and semiconductor element storage package | |
| JP3181036B2 (en) | Mounting structure of high frequency package | |
| JP3773803B2 (en) | Semiconductor device mounting package and semiconductor device mounting method | |
| JP2664774B2 (en) | High frequency circuit module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |