[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

GB2026236B - Power transistor - Google Patents

Power transistor

Info

Publication number
GB2026236B
GB2026236B GB7922191A GB7922191A GB2026236B GB 2026236 B GB2026236 B GB 2026236B GB 7922191 A GB7922191 A GB 7922191A GB 7922191 A GB7922191 A GB 7922191A GB 2026236 B GB2026236 B GB 2026236B
Authority
GB
United Kingdom
Prior art keywords
power transistor
transistor
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7922191A
Other versions
GB2026236A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB2026236A publication Critical patent/GB2026236A/en
Application granted granted Critical
Publication of GB2026236B publication Critical patent/GB2026236B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708Emitter or collector electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
GB7922191A 1978-07-20 1979-06-26 Power transistor Expired GB2026236B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92645078A 1978-07-20 1978-07-20

Publications (2)

Publication Number Publication Date
GB2026236A GB2026236A (en) 1980-01-30
GB2026236B true GB2026236B (en) 1983-02-02

Family

ID=25453225

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7922191A Expired GB2026236B (en) 1978-07-20 1979-06-26 Power transistor

Country Status (5)

Country Link
JP (1) JPS5522892A (en)
CA (1) CA1155236A (en)
DE (1) DE2929133C2 (en)
FR (1) FR2438341A1 (en)
GB (1) GB2026236B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3277352D1 (en) * 1981-04-30 1987-10-22 Toshiba Kk Improved emitter structure for semiconductor devices
JPS589369A (en) * 1981-07-08 1983-01-19 Matsushita Electronics Corp Transistor
JPS5818964A (en) * 1981-07-28 1983-02-03 Fujitsu Ltd Semiconductor device
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor
FR2528233A1 (en) * 1982-06-08 1983-12-09 Thomson Csf TRANSMITTER FINGER STRUCTURE IN A SWITCHING TRANSISTOR
JPS6457752A (en) * 1987-08-28 1989-03-06 Nec Corp Semiconductor device
KR970024275A (en) * 1995-10-10 1997-05-30 김광호 Transistor with increased safe operating area and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
FR1519530A (en) * 1965-03-17 1968-04-05 Rca Corp Semiconductor device
DE1514008B2 (en) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg AREA TRANSISTOR
US3347720A (en) * 1965-10-21 1967-10-17 Bendix Corp Method of forming a semiconductor by masking and diffusion
FR2374743A1 (en) * 1976-12-20 1978-07-13 Radiotechnique Compelec MULTI-LAYER TRANSISTOR WITH COMPOUND EMITTER

Also Published As

Publication number Publication date
FR2438341A1 (en) 1980-04-30
CA1155236A (en) 1983-10-11
JPS5522892A (en) 1980-02-18
GB2026236A (en) 1980-01-30
FR2438341B1 (en) 1984-01-27
DE2929133A1 (en) 1980-01-31
DE2929133C2 (en) 1987-05-14

Similar Documents

Publication Publication Date Title
JPS54114188A (en) Field effect transistor
JPS54154283A (en) Lateral transistor structure
JPS5580359A (en) Field effect transistor
GB2100926B (en) Field effect transistors
JPS54140127A (en) Power unit
JPS5555570A (en) Power mosfet
JPS5562766A (en) Transistor
GB2037483B (en) Transistors
MY8500659A (en) Transistor power amplifier circuit
JPS54122981A (en) Transistor
GB2015444B (en) Power steering device
GB2030769B (en) Field effect transistor
GB2028042B (en) Transistor circuit
JPS54111715A (en) Transistor circuit
GB2026236B (en) Power transistor
GB2021861B (en) Field effect transistors
JPS55891A (en) Power source
JPS5526090A (en) Power distributing device
GB2014008B (en) Power amplifier
JPS54136263A (en) Power amplifier
JPS5496748A (en) Power unit
JPS54119615A (en) Power unit
JPS5752170A (en) Power transistor
GB2020134B (en) Power amplifier
JPS54122851A (en) Power unit

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 19990625