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GB202010749D0 - Single crystal metal layers, methods of production and uses thereof - Google Patents

Single crystal metal layers, methods of production and uses thereof

Info

Publication number
GB202010749D0
GB202010749D0 GBGB2010749.6A GB202010749A GB202010749D0 GB 202010749 D0 GB202010749 D0 GB 202010749D0 GB 202010749 A GB202010749 A GB 202010749A GB 202010749 D0 GB202010749 D0 GB 202010749D0
Authority
GB
United Kingdom
Prior art keywords
production
methods
single crystal
metal layers
crystal metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB2010749.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge Enterprise Ltd
Original Assignee
Cambridge Enterprise Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Enterprise Ltd filed Critical Cambridge Enterprise Ltd
Priority to GBGB2010749.6A priority Critical patent/GB202010749D0/en
Publication of GB202010749D0 publication Critical patent/GB202010749D0/en
Priority to PCT/EP2021/069223 priority patent/WO2022013111A1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
GBGB2010749.6A 2020-07-13 2020-07-13 Single crystal metal layers, methods of production and uses thereof Ceased GB202010749D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB2010749.6A GB202010749D0 (en) 2020-07-13 2020-07-13 Single crystal metal layers, methods of production and uses thereof
PCT/EP2021/069223 WO2022013111A1 (en) 2020-07-13 2021-07-09 Single crystal metal layers, methods of production and uses thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB2010749.6A GB202010749D0 (en) 2020-07-13 2020-07-13 Single crystal metal layers, methods of production and uses thereof

Publications (1)

Publication Number Publication Date
GB202010749D0 true GB202010749D0 (en) 2020-08-26

Family

ID=72140021

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB2010749.6A Ceased GB202010749D0 (en) 2020-07-13 2020-07-13 Single crystal metal layers, methods of production and uses thereof

Country Status (2)

Country Link
GB (1) GB202010749D0 (en)
WO (1) WO2022013111A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115287757A (en) * 2022-07-08 2022-11-04 中国科学院电工研究所 Preparation method of copper single crystal wafer and single crystal graphene

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664191A (en) 1970-06-01 1972-05-23 Fischer & Porter Co Explosion-proof self-cleaning electrodes
US4325776A (en) 1977-06-20 1982-04-20 Siemens Aktiengesellschaft Method for preparing coarse-crystal or single-crystal metal films
US5443032A (en) 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
EP1349204A3 (en) * 2002-02-28 2007-05-02 Interuniversitair Microelektronica Centrum ( Imec) A method for producing a device having a semiconductor layer on a lattice mismatched substrate

Also Published As

Publication number Publication date
WO2022013111A1 (en) 2022-01-20

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)