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GB201517910D0 - Semiconductor drive unit and power converter using the same - Google Patents

Semiconductor drive unit and power converter using the same

Info

Publication number
GB201517910D0
GB201517910D0 GBGB1517910.4A GB201517910A GB201517910D0 GB 201517910 D0 GB201517910 D0 GB 201517910D0 GB 201517910 A GB201517910 A GB 201517910A GB 201517910 D0 GB201517910 D0 GB 201517910D0
Authority
GB
United Kingdom
Prior art keywords
same
drive unit
power converter
semiconductor drive
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1517910.4A
Other versions
GB2533677A (en
GB2533677B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB201517910D0 publication Critical patent/GB201517910D0/en
Publication of GB2533677A publication Critical patent/GB2533677A/en
Application granted granted Critical
Publication of GB2533677B publication Critical patent/GB2533677B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
GB1517910.4A 2014-10-24 2015-10-09 Semiconductor drive unit and power converter using the same Expired - Fee Related GB2533677B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014216814A JP6362996B2 (en) 2014-10-24 2014-10-24 Semiconductor drive device and power conversion device using the same

Publications (3)

Publication Number Publication Date
GB201517910D0 true GB201517910D0 (en) 2015-11-25
GB2533677A GB2533677A (en) 2016-06-29
GB2533677B GB2533677B (en) 2017-06-07

Family

ID=55130835

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1517910.4A Expired - Fee Related GB2533677B (en) 2014-10-24 2015-10-09 Semiconductor drive unit and power converter using the same

Country Status (4)

Country Link
JP (1) JP6362996B2 (en)
CN (1) CN105553235B (en)
DE (1) DE102015220594A1 (en)
GB (1) GB2533677B (en)

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JP2017208988A (en) * 2016-05-20 2017-11-24 新電元工業株式会社 Switching power supply device and clamp type semiconductor device
WO2018008398A1 (en) * 2016-07-04 2018-01-11 三菱電機株式会社 Drive circuit and power module using same
JP6546891B2 (en) * 2016-09-16 2019-07-17 ミネベアミツミ株式会社 Motor drive control device, drive control method, fan motor and electronic device
JP6510474B2 (en) * 2016-09-16 2019-05-08 ミネベアミツミ株式会社 Motor drive control device, drive control method, fan motor and electronic device
JP6903894B2 (en) * 2016-11-09 2021-07-14 富士電機株式会社 Semiconductor device
CN108075623B (en) * 2016-11-09 2020-04-21 致茂电子(苏州)有限公司 Clamp Control Circuit
EP3352375A1 (en) * 2017-01-18 2018-07-25 Siemens Aktiengesellschaft Control device for actuating a bipolar switchable power semiconductor device, semiconductor module, and method
JP6168253B1 (en) * 2017-05-01 2017-07-26 富士電機株式会社 Drive device and switch device
JP6946772B2 (en) * 2017-06-16 2021-10-06 株式会社デンソー Power converter
CN107623512B (en) * 2017-08-29 2020-08-04 中国科学院电工研究所 Active Miller clamping protection circuit
DE102017219713A1 (en) * 2017-11-07 2019-05-09 Bayerische Motoren Werke Aktiengesellschaft HALF BRIDGE MODULE FOR A CURRENT TRANSFORMER
CN107947542A (en) * 2017-12-20 2018-04-20 西安中车永电电气有限公司 A kind of driving circuit device of two-stage clamper
CN114785094A (en) * 2018-01-05 2022-07-22 台达电子工业股份有限公司 Waveform conversion circuit and gate drive circuit
EP3514907B1 (en) * 2018-01-18 2024-08-28 Hitachi Energy Ltd Crowbar device and multistage crowbar apparatus
JP6889872B2 (en) * 2018-02-02 2021-06-18 株式会社安川電機 Semiconductor device drive circuit, semiconductor device drive method, and motor control device
JP2019161495A (en) * 2018-03-14 2019-09-19 富士電機株式会社 Semiconductor device and apparatus
CN108957278B (en) * 2018-08-10 2024-03-29 中国矿业大学 Based on gate charge Q g High-power IGBT fault diagnosis and protection method and device
CN109302169B (en) * 2018-08-23 2022-04-22 北京长峰天通科技有限公司 SiC MOSFET drive protection circuit and protection method thereof
EP3618278A1 (en) * 2018-08-28 2020-03-04 Siemens Aktiengesellschaft Driving of a bipolar transistor having insulated gate electrode
DE102018214579A1 (en) * 2018-08-29 2020-03-05 Robert Bosch Gmbh Converter with clamp diode
JP7132099B2 (en) * 2018-11-20 2022-09-06 株式会社日立インダストリアルプロダクツ power converter
JP2020113815A (en) * 2019-01-08 2020-07-27 サンケン電気株式会社 Semiconductor device
JP7273629B2 (en) * 2019-06-25 2023-05-15 株式会社東芝 power converter
GB2586050B (en) * 2019-07-31 2021-11-10 Murata Manufacturing Co Power supply output device
GB2586049B (en) * 2019-07-31 2022-03-09 Murata Manufacturing Co Power supply output device
JP7196044B2 (en) * 2019-09-06 2022-12-26 株式会社 日立パワーデバイス Semiconductor equipment and power conversion equipment
CN111211673A (en) * 2020-01-10 2020-05-29 伟芯科技(绍兴)有限公司 ESD power protection clamping circuit
US12294287B2 (en) 2020-02-10 2025-05-06 Mitsubishi Electric Corporation Semiconductor switching element drive circuit and semiconductor device
WO2021192035A1 (en) * 2020-03-24 2021-09-30 三菱電機株式会社 Semiconductor drive device, semiconductor device, and power conversion device
JP7403404B2 (en) 2020-07-28 2023-12-22 株式会社 日立パワーデバイス Upper arm drive circuit
DE112021007109T5 (en) 2021-02-17 2023-12-14 Mitsubishi Electric Corporation DRIVER CIRCUIT FOR SEMICONDUCTOR SWITCHING DEVICE
CN113726212A (en) * 2021-09-01 2021-11-30 青岛海信日立空调系统有限公司 Frequency conversion equipment
CN118077128A (en) 2021-10-13 2024-05-24 三菱电机株式会社 Driving circuit for power semiconductor element, power semiconductor module, and power conversion device

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JP2002084174A (en) * 2000-09-08 2002-03-22 Denso Corp Load drive circuit
JP3886876B2 (en) * 2002-01-17 2007-02-28 三菱電機株式会社 Power semiconductor element drive circuit
JP4023336B2 (en) * 2003-02-20 2007-12-19 株式会社日立製作所 Method and apparatus for driving semiconductor device
JP4506276B2 (en) 2004-05-17 2010-07-21 富士電機システムズ株式会社 Drive circuit for self-extinguishing semiconductor device
JP4816139B2 (en) * 2006-02-27 2011-11-16 株式会社日立製作所 Power semiconductor switching element drive circuit
JP4432953B2 (en) * 2006-09-27 2010-03-17 株式会社日立製作所 Semiconductor power converter
CN100558207C (en) * 2007-01-09 2009-11-04 中华映管股份有限公司 Current control device
JP5179954B2 (en) * 2008-06-03 2013-04-10 株式会社日立製作所 Power conversion device provided with gate driving device for semiconductor switching element
JP4968487B2 (en) * 2010-03-08 2012-07-04 サンケン電気株式会社 Gate drive circuit
CN102185286A (en) * 2011-05-04 2011-09-14 武汉理工大学 High-power insulated gate bipolar transistor (IGBT) redundancy driving protection circuit
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JP6105431B2 (en) * 2013-08-01 2017-03-29 東芝三菱電機産業システム株式会社 Gate control circuit for power semiconductor device
CN203607833U (en) * 2013-10-25 2014-05-21 海能达通信股份有限公司 An explosion-proof electric device

Also Published As

Publication number Publication date
GB2533677A (en) 2016-06-29
DE102015220594A1 (en) 2016-04-28
CN105553235A (en) 2016-05-04
JP2016086490A (en) 2016-05-19
GB2533677B (en) 2017-06-07
JP6362996B2 (en) 2018-07-25
CN105553235B (en) 2018-02-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20231009