GB2080780B - Heat treatment of silicon slices - Google Patents
Heat treatment of silicon slicesInfo
- Publication number
- GB2080780B GB2080780B GB8121544A GB8121544A GB2080780B GB 2080780 B GB2080780 B GB 2080780B GB 8121544 A GB8121544 A GB 8121544A GB 8121544 A GB8121544 A GB 8121544A GB 2080780 B GB2080780 B GB 2080780B
- Authority
- GB
- United Kingdom
- Prior art keywords
- heat treatment
- silicon slices
- slices
- silicon
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000010438 heat treatment Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8121544A GB2080780B (en) | 1980-07-18 | 1981-07-13 | Heat treatment of silicon slices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8023539 | 1980-07-18 | ||
GB8121544A GB2080780B (en) | 1980-07-18 | 1981-07-13 | Heat treatment of silicon slices |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2080780A GB2080780A (en) | 1982-02-10 |
GB2080780B true GB2080780B (en) | 1983-06-29 |
Family
ID=26276264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8121544A Expired GB2080780B (en) | 1980-07-18 | 1981-07-13 | Heat treatment of silicon slices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2080780B (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4437922A (en) * | 1982-03-26 | 1984-03-20 | International Business Machines Corporation | Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
US4459159A (en) * | 1982-09-29 | 1984-07-10 | Mara William C O | Method for making semi-insulating substrate by post-process heating of oxygenated and doped silicon |
JPS59190300A (en) * | 1983-04-08 | 1984-10-29 | Hitachi Ltd | Method and apparatus for production of semiconductor |
US4548654A (en) * | 1983-06-03 | 1985-10-22 | Motorola, Inc. | Surface denuding of silicon wafer |
US4505759A (en) * | 1983-12-19 | 1985-03-19 | Mara William C O | Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals |
US4666532A (en) * | 1984-05-04 | 1987-05-19 | Monsanto Company | Denuding silicon substrates with oxygen and halogen |
US4622082A (en) * | 1984-06-25 | 1986-11-11 | Monsanto Company | Conditioned semiconductor substrates |
JPH02263792A (en) * | 1989-03-31 | 1990-10-26 | Shin Etsu Handotai Co Ltd | Heat treatment of silicon |
JP2725460B2 (en) * | 1991-01-22 | 1998-03-11 | 日本電気株式会社 | Manufacturing method of epitaxial wafer |
JP2613498B2 (en) * | 1991-03-15 | 1997-05-28 | 信越半導体株式会社 | Heat treatment method for Si single crystal wafer |
JPH0684925A (en) * | 1992-07-17 | 1994-03-25 | Toshiba Corp | Semiconductor substrate and its treatment |
JPH0786289A (en) * | 1993-07-22 | 1995-03-31 | Toshiba Corp | Semiconductor silicon wafer and its manufacture |
US5629216A (en) * | 1994-06-30 | 1997-05-13 | Seh America, Inc. | Method for producing semiconductor wafers with low light scattering anomalies |
US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
JP4566478B2 (en) | 2001-08-09 | 2010-10-20 | シルトロニック・ジャパン株式会社 | Silicon semiconductor substrate and manufacturing method thereof |
-
1981
- 1981-07-13 GB GB8121544A patent/GB2080780B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2080780A (en) | 1982-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |