[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

GB1522327A - Solid state circuit - Google Patents

Solid state circuit

Info

Publication number
GB1522327A
GB1522327A GB4691775A GB4691775A GB1522327A GB 1522327 A GB1522327 A GB 1522327A GB 4691775 A GB4691775 A GB 4691775A GB 4691775 A GB4691775 A GB 4691775A GB 1522327 A GB1522327 A GB 1522327A
Authority
GB
United Kingdom
Prior art keywords
emitter
collector current
collector
switch
switch material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4691775A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of GB1522327A publication Critical patent/GB1522327A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0895—Tunnel injectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Transistors (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

1522327 Semiconductor devices ENERGY CONVERSION DEVICES Inc 13 Nov 1975 [14 Nov 1974] 46917/75 Heading H1K [Also in Division H3] A transistor-like device of which either the emitter region 4 (Fig. 1) or the collector region 8<SP>1</SP> (Fig. 5) is of a material which switches from a high resistance to a low resistance state on application thereacross of a voltage above a threshold value, is operated with selectively applicable emitter-base and emitter-collector biases, the latter of which is on its own insufficient to cause the switch material to become conductive but the joint application of both of which causes the material to switch. In the non-conductive condition of the switch material a negligible emitter-collector current flows, whereas when the switch material is conductive a maximum emitter-collector current flows. If, after simultaneous application of both biases, the emitter-base bias alone is removed a significant emitter-collector current, generally of an intermediate value less than the maximum value referred to above, continues to flow, and this provides a logic circuit in which three distinct conditions may be detected. In the circuit of Fig. 5 these are detected by directly sensing the level of the collector current using two amplitude level sensing means, such as Schmidt trigger circuits, 40<SP>1</SP>, 42<SP>1</SP>, set to trigger respectively at the intermediate and maximum collector current levels. The outputs of circuits 40<SP>1</SP>, 42<SP>1</SP> are coupled to binary logic circuit 44 in turn coupled to indicating means 46. In the circuit of Fig. 1 level sensing means 40, 42 are set to detect the presence or absence of collector and base currents respectively, and the outputs thereof supply a binary logic circuit 44 to provide indication of the same three logic states as in the previous embodiment. Constructionally, the switch material 4 or 8<SP>1</SP> is preferably r.f.-sputtered on to a Si body containing the other two device regions, e.g. formed by epitaxy. The switch material may be of either "threshold" or "memory" types, and several suitable materials are disclosed. Reset mechanisms appropriate to the particular type of switch material are employed (i.e. simple interruption of the emitter-collector current for a "threshold" material, and application of a reset current pulse for a "memory" material).
GB4691775A 1974-11-14 1975-11-13 Solid state circuit Expired GB1522327A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52374174A 1974-11-14 1974-11-14

Publications (1)

Publication Number Publication Date
GB1522327A true GB1522327A (en) 1978-08-23

Family

ID=24086276

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4691775A Expired GB1522327A (en) 1974-11-14 1975-11-13 Solid state circuit

Country Status (4)

Country Link
JP (1) JPS5938672B2 (en)
DE (1) DE2551035C3 (en)
FR (1) FR2291609A1 (en)
GB (1) GB1522327A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2153147A (en) * 1984-01-13 1985-08-14 British Petroleum Co Plc Threshold switch

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985003599A1 (en) * 1984-02-09 1985-08-15 Ncr Corporation Programmable read-only memory cell and method of fabrication
FR2972849A1 (en) 2011-03-15 2012-09-21 Commissariat Energie Atomique MEMORY CELL

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
GB1469814A (en) * 1973-04-26 1977-04-06 Energy Conversion Devices Inc Solid state electronic device and circuit therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2153147A (en) * 1984-01-13 1985-08-14 British Petroleum Co Plc Threshold switch

Also Published As

Publication number Publication date
DE2551035B2 (en) 1980-09-18
JPS5938672B2 (en) 1984-09-18
DE2551035C3 (en) 1981-08-27
DE2551035A1 (en) 1976-05-26
JPS5173373A (en) 1976-06-25
FR2291609B1 (en) 1980-01-11
FR2291609A1 (en) 1976-06-11

Similar Documents

Publication Publication Date Title
DE2966268D1 (en) A switching circuit
ES471916A1 (en) Solenoid drive circuits
GB1522327A (en) Solid state circuit
GB792120A (en) Improvements in circuits employing semi-conductor devices
JPS57104325A (en) Ecl circuit
JPS5717226A (en) Integrated circuit
US3430075A (en) Highly stable pulse generator
JPS6439821A (en) Logic circuit
JPS5286049A (en) Semiconductor switch
JPS5672366A (en) Measuring device of holding current of thyristor
JPS54118764A (en) Switching circuit
SU789827A1 (en) Voltage monitoring apparatus
JPS56123781A (en) Electric power control device
GB1516002A (en) Monolithically integrated threshold switch
SU439061A1 (en) TUNNEL DIODE RELAXATOR
SU1167712A1 (en) Peak detector
GB1379856A (en) Circuit arrangement for linear voltage-frequency or current-frequency conversion
JPS5788591A (en) Semiconductor storage circuit device
JPS57182663A (en) Transistor testing circuit
SU150870A1 (en) Stepper distributor
SU720421A1 (en) Threshold device
JPS5230385A (en) Testing apparatus of increasing rate of voltage in the critical off-state when a state of a bipolar thyristor is changed
JPS5748829A (en) Semiconductor switch circuit
JPS5688667A (en) Protective device for gate turn-off thyristor
GB1010085A (en) Transistor switch

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee