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GB1503088A - Avalanche photodetector - Google Patents

Avalanche photodetector

Info

Publication number
GB1503088A
GB1503088A GB3060476A GB3060476A GB1503088A GB 1503088 A GB1503088 A GB 1503088A GB 3060476 A GB3060476 A GB 3060476A GB 3060476 A GB3060476 A GB 3060476A GB 1503088 A GB1503088 A GB 1503088A
Authority
GB
United Kingdom
Prior art keywords
gain
apd
constant
spd
proportional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3060476A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3060476A priority Critical patent/GB1503088A/en
Priority to DE19772732040 priority patent/DE2732040A1/en
Publication of GB1503088A publication Critical patent/GB1503088A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H04B10/691—Arrangements for optimizing the photodetector in the receiver
    • H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Optical Communication System (AREA)

Abstract

1503088 Avalanche photo-detectors STANDARD TELEPHONES & CABLES Ltd 22 July 1976 30604/76 Heading G1A [Also in Division H1] A photo-dector arrangement comprises an avalanche photodiode APD arranged to receive a major proportion (1-α) of the incident light and a secondary non-multiplying photodiode SPD arranged to receive a constant mirror proportion (α) of the incident light. A signal V 1 proportional to gain and a signal V2 proportional to the mean received signal are fed to a bias supply 6 which controls the gain of the APD either to a pre-set constant or to a value dependant on the received signal power. In a simpler circuit for providing constant gain Fig. 3 (not shown) only the SPD output is filtered, by a low-pass filter (7), and the filtered SPD photocurrent passes via an amplifier (8) with constant gain to the APD to provide the bias current. The photodiodes, transistor amplifier, and interconnections may be formed in an integrated circuit structure; see Division H1.
GB3060476A 1976-07-22 1976-07-22 Avalanche photodetector Expired GB1503088A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB3060476A GB1503088A (en) 1976-07-22 1976-07-22 Avalanche photodetector
DE19772732040 DE2732040A1 (en) 1976-07-22 1977-07-15 PHOTODETECTOR CIRCUIT ARRANGEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3060476A GB1503088A (en) 1976-07-22 1976-07-22 Avalanche photodetector

Publications (1)

Publication Number Publication Date
GB1503088A true GB1503088A (en) 1978-03-08

Family

ID=10310254

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3060476A Expired GB1503088A (en) 1976-07-22 1976-07-22 Avalanche photodetector

Country Status (2)

Country Link
DE (1) DE2732040A1 (en)
GB (1) GB1503088A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023951A (en) * 1989-04-14 1991-06-11 Northern Telecom Limited Optical receivers
CN112103276A (en) * 2019-07-24 2020-12-18 山东国迅量子芯科技有限公司 Avalanche photodetector integrated with filtering amplification chip and driving method thereof
CN113167643A (en) * 2018-12-12 2021-07-23 浜松光子学株式会社 Optical detection device and method for manufacturing optical detection device
CN113167640A (en) * 2018-12-12 2021-07-23 浜松光子学株式会社 Optical detection device
US11513002B2 (en) 2018-12-12 2022-11-29 Hamamatsu Photonics K.K. Light detection device having temperature compensated gain in avalanche photodiode
US11901379B2 (en) 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
US12080822B2 (en) 2018-12-12 2024-09-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector
US12113088B2 (en) 2018-12-12 2024-10-08 Hamamatsu Photonics K.K. Light detection device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023951A (en) * 1989-04-14 1991-06-11 Northern Telecom Limited Optical receivers
CN113167643A (en) * 2018-12-12 2021-07-23 浜松光子学株式会社 Optical detection device and method for manufacturing optical detection device
CN113167640A (en) * 2018-12-12 2021-07-23 浜松光子学株式会社 Optical detection device
EP3896411A4 (en) * 2018-12-12 2022-10-05 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector
US11513002B2 (en) 2018-12-12 2022-11-29 Hamamatsu Photonics K.K. Light detection device having temperature compensated gain in avalanche photodiode
US11561131B2 (en) 2018-12-12 2023-01-24 Hamamatsu Photonics K.K. Determination method and light detection device
US11901379B2 (en) 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
US11927478B2 (en) 2018-12-12 2024-03-12 Hamamatsu Photonics K.K. Light detection device
CN113167643B (en) * 2018-12-12 2024-05-28 浜松光子学株式会社 Light detection device and method for manufacturing light detection device
US12080822B2 (en) 2018-12-12 2024-09-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector
US12113088B2 (en) 2018-12-12 2024-10-08 Hamamatsu Photonics K.K. Light detection device
CN112103276A (en) * 2019-07-24 2020-12-18 山东国迅量子芯科技有限公司 Avalanche photodetector integrated with filtering amplification chip and driving method thereof

Also Published As

Publication number Publication date
DE2732040A1 (en) 1978-01-26

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee