GB1482298A - Monolithically integrated circuit - Google Patents
Monolithically integrated circuitInfo
- Publication number
- GB1482298A GB1482298A GB2212775A GB2212775A GB1482298A GB 1482298 A GB1482298 A GB 1482298A GB 2212775 A GB2212775 A GB 2212775A GB 2212775 A GB2212775 A GB 2212775A GB 1482298 A GB1482298 A GB 1482298A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- collector
- epitaxial layer
- emitter
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
1482298 Integrated circuit transistors ITT INDUSTRIES Inc 22 May 1975 [31 May 1974] 22127/75 Heading H1K In the manufacture, in an integrated structure containing non-I<SP>2</SP>L devices, of an inverse vertical transistor (Fig. 4), the base zone 12 of which forms the collector of a lateral current injector transistor, after formation of the buried emitter zone 4 of the vertical transistor and provision in the epitaxial layer 9 of its emittercontacting zone 3 and the collector zone 12 and emitter zone 10 of the lateral transistor, there are formed in a single planar diffusion step the collector zone(s) 1 of the vertical transistor and an auxiliary #-enhacing emitter zone 2 extending laterally into its base zone from contacting zone 3. Where a plurality of collector zones are present in base zone 12 the auxiliary zone may extend closer to some than to others (Fig. 5, not shown). In the arrangement described there are several vertical multi-collector transistors on each side of the common linear emitter zone 10, the resistance of which is reduced by heavily doped P + strip 11 diffused simultaneously with contacting zone 3, and a P zone 7 provides isolation from conventional bipolar circuitry formed in the adjacent part of the epitaxial layer. Emitter zone 4 can be brought nearer the surface of the epitaxial layer to improve # by a further donor diffusion into the epitaxial layer after it has been partially formed.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742426529 DE2426529C3 (en) | 1974-05-31 | 1974-05-31 | Planar diffusion process for manufacturing a transistor in a monolithically integrated I2 L circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1482298A true GB1482298A (en) | 1977-08-10 |
Family
ID=5917044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2212775A Expired GB1482298A (en) | 1974-05-31 | 1975-05-22 | Monolithically integrated circuit |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS515974A (en) |
| DE (1) | DE2426529C3 (en) |
| FR (1) | FR2273373B3 (en) |
| GB (1) | GB1482298A (en) |
| IT (1) | IT1038519B (en) |
| NL (1) | NL7506334A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5541533B2 (en) * | 1974-12-04 | 1980-10-24 | ||
| JPS52141587A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its process |
| DE3004681A1 (en) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Diode element for integrated circuit - achieves low noise and small differential impedance by using three specified zones |
| US20080187018A1 (en) | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
| WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
-
1974
- 1974-05-31 DE DE19742426529 patent/DE2426529C3/en not_active Expired
-
1975
- 1975-05-22 GB GB2212775A patent/GB1482298A/en not_active Expired
- 1975-05-27 IT IT2374275A patent/IT1038519B/en active
- 1975-05-28 FR FR7516605A patent/FR2273373B3/fr not_active Expired
- 1975-05-29 NL NL7506334A patent/NL7506334A/en unknown
- 1975-05-31 JP JP50065986A patent/JPS515974A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS515974A (en) | 1976-01-19 |
| DE2426529C3 (en) | 1980-08-28 |
| DE2426529B2 (en) | 1979-12-20 |
| NL7506334A (en) | 1975-12-02 |
| FR2273373B3 (en) | 1978-12-29 |
| IT1038519B (en) | 1979-11-30 |
| DE2426529A1 (en) | 1975-12-11 |
| FR2273373A1 (en) | 1975-12-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |