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GB1441261A - Semiconductor avalanche photodiodes - Google Patents

Semiconductor avalanche photodiodes

Info

Publication number
GB1441261A
GB1441261A GB1444272A GB1444272A GB1441261A GB 1441261 A GB1441261 A GB 1441261A GB 1444272 A GB1444272 A GB 1444272A GB 1444272 A GB1444272 A GB 1444272A GB 1441261 A GB1441261 A GB 1441261A
Authority
GB
United Kingdom
Prior art keywords
region
substrate
layer
guard ring
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1444272A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMI Ltd
Original Assignee
EMI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EMI Ltd filed Critical EMI Ltd
Priority to GB1444272A priority Critical patent/GB1441261A/en
Publication of GB1441261A publication Critical patent/GB1441261A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

1441261 Photodiodes EMI Ltd 27 June 1973 [28 March 1972] 14442/72 Heading H1K An avalanche photodiode has a shallow surface region 1 of opposite conductivity type to a surrounding epitaxial layer 6 and its supporting substrate 2, the substrate having a resistivity lower than 0.1 ohm. cm. The reverse bias and the design of the device are so chosen that at least part of the depletion region 4 associated with the junction between the region 1 and layer 6 extends to the substrate. This reduces the low-field volume of the layer and since the diffusion length of carriers formed by radiation absorbed in the substrate is low such carriers add little to the overall photocurrent of the device, which gives sharp output pulses. The device has one or two annular guard rings 3 associated with the region 1, the outer guard ring (if present) being spaced from that contiguous with the region. Preferably the lower boundaries of guard ring 3 and region 1 are coplanar, as shown, to eliminate any low field portion 5 of the layer 6 beneath the region 1. The region 1 is formed by diffusion into the surface of a pit etched in a previously diffused region which comprises guard ring 3. Fig. 5 (not shown) depicts a silicon diode of the type shown in Fig. 3 mounted on a metal and glass header welded to a metal can with an end window.
GB1444272A 1972-03-28 1972-03-28 Semiconductor avalanche photodiodes Expired GB1441261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1444272A GB1441261A (en) 1972-03-28 1972-03-28 Semiconductor avalanche photodiodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1444272A GB1441261A (en) 1972-03-28 1972-03-28 Semiconductor avalanche photodiodes

Publications (1)

Publication Number Publication Date
GB1441261A true GB1441261A (en) 1976-06-30

Family

ID=10041273

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1444272A Expired GB1441261A (en) 1972-03-28 1972-03-28 Semiconductor avalanche photodiodes

Country Status (1)

Country Link
GB (1) GB1441261A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000373A (en) * 1977-06-27 1979-01-04 Thomson Csf Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
US4497109A (en) * 1979-12-21 1985-02-05 Siemens Aktiengesellschaft Method of fabricating light-controlled thyristor utilizing selective etching and ion-implantation
US4761383A (en) * 1981-09-28 1988-08-02 Kokusai Denshin Denwa Kabushiki Kaisha Method of manufacturing avalanche photo diode
EP0697743A1 (en) * 1994-08-17 1996-02-21 Seiko Instruments Inc. Avalanche photodiode joined with with an integrated circuit package and method of fabrication

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000373A (en) * 1977-06-27 1979-01-04 Thomson Csf Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
GB2000373B (en) * 1977-06-27 1982-04-07 Thomson Csf A diode capable of alternately functioning as an emitter and detector of light of the same wavelength
US4497109A (en) * 1979-12-21 1985-02-05 Siemens Aktiengesellschaft Method of fabricating light-controlled thyristor utilizing selective etching and ion-implantation
US4761383A (en) * 1981-09-28 1988-08-02 Kokusai Denshin Denwa Kabushiki Kaisha Method of manufacturing avalanche photo diode
EP0697743A1 (en) * 1994-08-17 1996-02-21 Seiko Instruments Inc. Avalanche photodiode joined with with an integrated circuit package and method of fabrication
US5763903A (en) * 1994-08-17 1998-06-09 Seiko Instruments Inc. Avalanche photodiode for light detection

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee