GB1303660A - - Google Patents
Info
- Publication number
- GB1303660A GB1303660A GB1303660DA GB1303660A GB 1303660 A GB1303660 A GB 1303660A GB 1303660D A GB1303660D A GB 1303660DA GB 1303660 A GB1303660 A GB 1303660A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- cathode
- edge
- breakdown voltage
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
Landscapes
- Bipolar Transistors (AREA)
Abstract
1303660 Cathode materials GENERAL ELECTRIC CO Ltd 13 Jan 1971 [12 Nov 1969] 55453/69 Heading H1D A cathode comprises a semi-conductor body having a PN junction 4 intersecting a surface of the body with the net carrier concentrations on each side of the junction, in the neighbourhood of the intersection, more nearly equal than those in the bulk of the material to reduce the reverse bias breakdown voltage across the junction at the surface. A square flat crystal 1 of SiC comprises P- and N-type regions 3, 2. A frusto-conical hole is cut by ultrasonic drilling to expose part of the edge of the junction. Donor impurity is introduced by diffusion or ion implantation into a zone 6 about the exposed edge and the crystal annealed. The exposed outer edge of the junction is masked with dielectric to prevent emission. The breakdown voltage is further reduced by suitable choice of angle between the junction and the surface that it intersects. The cathode is used in a C.R.T.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5545369 | 1969-11-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1303660A true GB1303660A (en) | 1973-01-17 |
Family
ID=10473954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1303660D Expired GB1303660A (en) | 1969-11-12 | 1969-11-12 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1303660A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2902746A1 (en) * | 1978-01-27 | 1979-08-02 | Philips Nv | SEMICONDUCTOR ARRANGEMENT AND METHOD OF PRODUCING IT, AND RECORDING DEVICE AND PLAYBACK DEVICE WITH SUCH A SEMICONDUCTOR ARRANGEMENT |
| DE3025945A1 (en) * | 1979-07-13 | 1981-01-29 | Philips Nv | SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF, AND RECEIVER PIPE AND PLAYBACK DEVICE WITH SUCH A SEMICONDUCTOR ARRANGEMENT |
| US4871911A (en) * | 1985-02-14 | 1989-10-03 | U.S. Philips Corporation | Electron beam apparatus comprising a semiconductor electron emitter |
| GB2347785A (en) * | 1999-03-06 | 2000-09-13 | Smiths Industries Plc | Electron-emitting devices |
| EP0890184B1 (en) * | 1996-03-27 | 2009-07-08 | Cree, Inc. | A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC |
-
1969
- 1969-11-12 GB GB1303660D patent/GB1303660A/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2902746A1 (en) * | 1978-01-27 | 1979-08-02 | Philips Nv | SEMICONDUCTOR ARRANGEMENT AND METHOD OF PRODUCING IT, AND RECORDING DEVICE AND PLAYBACK DEVICE WITH SUCH A SEMICONDUCTOR ARRANGEMENT |
| DE3025945A1 (en) * | 1979-07-13 | 1981-01-29 | Philips Nv | SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF, AND RECEIVER PIPE AND PLAYBACK DEVICE WITH SUCH A SEMICONDUCTOR ARRANGEMENT |
| US4871911A (en) * | 1985-02-14 | 1989-10-03 | U.S. Philips Corporation | Electron beam apparatus comprising a semiconductor electron emitter |
| EP0890184B1 (en) * | 1996-03-27 | 2009-07-08 | Cree, Inc. | A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC |
| GB2347785A (en) * | 1999-03-06 | 2000-09-13 | Smiths Industries Plc | Electron-emitting devices |
| GB2347785B (en) * | 1999-03-06 | 2003-12-17 | Smiths Industries Plc | Electron-emitting devices |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |