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GB1301136A - Logic circuit - Google Patents

Logic circuit

Info

Publication number
GB1301136A
GB1301136A GB3547170A GB3547170A GB1301136A GB 1301136 A GB1301136 A GB 1301136A GB 3547170 A GB3547170 A GB 3547170A GB 3547170 A GB3547170 A GB 3547170A GB 1301136 A GB1301136 A GB 1301136A
Authority
GB
United Kingdom
Prior art keywords
current
fet
path
gate
abc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3547170A
Inventor
Karsten E Drangeid
Andres Moser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1301136A publication Critical patent/GB1301136A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1301136 Transistor logic circuits INTERNATIONAL BUSINESS MACHINES CORP 22 July 1970 [4 Aug 1969] 35471/70 Heading H3T A logic circuit such as a NOR gate, Fig. 4, has a constant current from 54 switched between a first path leading to a logical network 51, 52' 53 and a second path 60, in dependence upon the inputs A, B, C, the second path being connected to a second constant current device 56 across which an output circuit 62, 63 is connected and carries that current in excess of the current carrying capacity of 56. The FET's shown are Schottky barrier FET's which are held off at zero gate bias by their contact voltage and which provide current flow from gate to source when the polarity is appropriate; and Schottky diodes 58 give level shift. The second current path 60 may have parallel paths 59 giving fan-out to other output circuits. When ABC are all low, the current from FET 54 flows through FET 55 gate to 61 and adds to the current caused to flow thereby in the drain-source path of the same FET 55. This is arranged to exceed the current capacity of FET 56, which is normally fully conducting due to the standing current in FET 55, by a sufficient amount to provide the required output current drive to FET 57 plus a current surplus to charge circuit capacitances during the initial change to the all ABC low condition. A one or more of the inputs ABC goes high, the corresponding FET 51, 52, 53 initially carries more current than FET 54 can supply, thus charging circuit capacitances, and then carries the current from FET 54 only; the FET 55 now being non-conductive, and the output D following to a low state.
GB3547170A 1969-08-04 1970-07-22 Logic circuit Expired GB1301136A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1176969A CH506920A (en) 1969-08-04 1969-08-04 Semiconductor circuit for processing binary signals

Publications (1)

Publication Number Publication Date
GB1301136A true GB1301136A (en) 1972-12-29

Family

ID=4376691

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3547170A Expired GB1301136A (en) 1969-08-04 1970-07-22 Logic circuit

Country Status (8)

Country Link
JP (1) JPS5440902B1 (en)
BE (1) BE752249A (en)
CA (1) CA931233A (en)
CH (1) CH506920A (en)
DE (1) DE2032525A1 (en)
FR (1) FR2056959B1 (en)
GB (1) GB1301136A (en)
NL (1) NL7010313A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2288422A1 (en) * 1974-10-18 1976-05-14 Thomson Csf LOGIC DOORS

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511823A1 (en) * 1981-08-21 1983-02-25 Thomson Csf LARGE ENTRANCE LOGIC CIRCUIT USING AT LEAST ONE LOW VOLTAGE FIELD EFFECT TRANSISTOR
JP7079661B2 (en) * 2018-05-24 2022-06-02 ラピスセミコンダクタ株式会社 Flag holding circuit and flag holding method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3299291A (en) * 1964-02-18 1967-01-17 Motorola Inc Logic elements using field-effect transistors in source follower configuration

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2288422A1 (en) * 1974-10-18 1976-05-14 Thomson Csf LOGIC DOORS

Also Published As

Publication number Publication date
FR2056959A1 (en) 1971-05-07
DE2032525A1 (en) 1971-02-18
NL7010313A (en) 1971-02-08
CA931233A (en) 1973-07-31
BE752249A (en) 1970-12-01
JPS5440902B1 (en) 1979-12-05
CH506920A (en) 1971-04-30
FR2056959B1 (en) 1973-08-10

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee